CN103319931B - 热退火工艺 - Google Patents

热退火工艺 Download PDF

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Publication number
CN103319931B
CN103319931B CN201310201760.4A CN201310201760A CN103319931B CN 103319931 B CN103319931 B CN 103319931B CN 201310201760 A CN201310201760 A CN 201310201760A CN 103319931 B CN103319931 B CN 103319931B
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CN
China
Prior art keywords
poly
film
vinylbenzene
dimethyl siloxane
block copolymer
Prior art date
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CN201310201760.4A
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English (en)
Chinese (zh)
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CN103319931A (zh
Inventor
张诗玮
J·温霍尔德
P·赫斯塔德
P·特雷福纳斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Global Technologies LLC
DuPont Electronic Materials International LLC
Original Assignee
Dow Global Technologies LLC
Rohm and Haas Electronic Materials LLC
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Publication of CN103319931A publication Critical patent/CN103319931A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/08—Planarisation of organic insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/02—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by baking
    • B05D3/0254—After-treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
    • B05D7/02—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials to macromolecular substances, e.g. rubber
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
    • B81C1/00031—Regular or irregular arrays of nanoscale structures, e.g. etch mask layer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D151/00—Coating compositions based on graft polymers in which the grafted component is obtained by reactions only involving carbon-to-carbon unsaturated bonds; Coating compositions based on derivatives of such polymers
    • C09D151/08—Coating compositions based on graft polymers in which the grafted component is obtained by reactions only involving carbon-to-carbon unsaturated bonds; Coating compositions based on derivatives of such polymers grafted on to macromolecular compounds obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/10—Block or graft copolymers containing polysiloxane sequences
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H10P95/906—Thermal treatments, e.g. annealing or sintering for altering the shape of semiconductors, e.g. smoothing the surface
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/002—Processes for applying liquids or other fluent materials the substrate being rotated
    • B05D1/005—Spin coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0147—Film patterning
    • B81C2201/0149—Forming nanoscale microstructures using auto-arranging or self-assembling material
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/42—Block-or graft-polymers containing polysiloxane sequences
    • C08G77/442—Block-or graft-polymers containing polysiloxane sequences containing vinyl polymer sequences

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Silicon Polymers (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Graft Or Block Polymers (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Laminated Bodies (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
CN201310201760.4A 2012-02-10 2013-02-08 热退火工艺 Active CN103319931B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/370,907 US8961918B2 (en) 2012-02-10 2012-02-10 Thermal annealing process
US13/370,907 2012-02-10

Publications (2)

Publication Number Publication Date
CN103319931A CN103319931A (zh) 2013-09-25
CN103319931B true CN103319931B (zh) 2015-06-17

Family

ID=48945713

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310201760.4A Active CN103319931B (zh) 2012-02-10 2013-02-08 热退火工艺

Country Status (5)

Country Link
US (1) US8961918B2 (https=)
JP (1) JP6166906B2 (https=)
KR (1) KR102129321B1 (https=)
CN (1) CN103319931B (https=)
TW (1) TWI498384B (https=)

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* Cited by examiner, † Cited by third party
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US8821739B2 (en) * 2012-07-12 2014-09-02 Rohm And Haas Electronic Materials Llc High temperature thermal annealing process
FR3010413B1 (fr) * 2013-09-09 2015-09-25 Arkema France Procede de controle de la periode d'un assemblage nano-structure comprenant un melange de copolymeres a blocs
FR3010414B1 (fr) * 2013-09-09 2015-09-25 Arkema France Procede d'obtention de films epais nano-structures obtenus a partir d'une composition de copolymeres a blocs
TWI478962B (zh) * 2013-10-09 2015-04-01 Univ Nat Taiwan 增進嵌段共聚物有序規整結構之製造方法
JP6702649B2 (ja) 2013-12-31 2020-06-03 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ ブロックコポリマーの性質を制御する方法及びブロックコポリマーから製造された物品
JP6558894B2 (ja) 2013-12-31 2019-08-14 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ コポリマーの設計、その製造方法およびそれを含む物品
JP2015129261A (ja) 2013-12-31 2015-07-16 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ ブロックコポリマーのアニール方法およびブロックコポリマーから製造する物品
JP6356096B2 (ja) * 2014-06-27 2018-07-11 ダウ グローバル テクノロジーズ エルエルシー ブロックコポリマーを製造するための方法およびそれから製造される物品
JP6122906B2 (ja) * 2014-06-27 2017-04-26 ダウ グローバル テクノロジーズ エルエルシー ブロックコポリマーを製造するための方法およびそれから製造される物品
US9505945B2 (en) 2014-10-30 2016-11-29 Az Electronic Materials (Luxembourg) S.A.R.L. Silicon containing block copolymers for direct self-assembly application
US10294359B2 (en) 2014-12-30 2019-05-21 Rohm And Haas Electronic Materials Llc Copolymer formulation for directed self assembly, methods of manufacture thereof and articles comprising the same
US11021630B2 (en) 2014-12-30 2021-06-01 Rohm And Haas Electronic Materials Llc Copolymer formulation for directed self assembly, methods of manufacture thereof and articles comprising the same
US10011713B2 (en) * 2014-12-30 2018-07-03 Dow Global Technologies Llc Copolymer formulation for directed self assembly, methods of manufacture thereof and articles comprising the same
FR3032714A1 (fr) * 2015-02-18 2016-08-19 Arkema France Procede de reduction du temps d'assemblage des films ordonnes de copolymeres a blocs
TWI627219B (zh) 2015-02-26 2018-06-21 羅門哈斯電子材料有限公司 用於定向自組裝的共聚物調配物、其製造方法以及包括其的物件
TWI612379B (zh) 2015-02-26 2018-01-21 Rohm And Haas Electronic Materials Llc 用於定向自組裝的共聚物調配物、其製造方法以及包括其的物件
JP6803842B2 (ja) 2015-04-13 2020-12-23 ハネウェル・インターナショナル・インコーポレーテッドＨｏｎｅｙｗｅｌｌ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｉｎｃ． オプトエレクトロニクス用途のためのポリシロキサン製剤及びコーティング
JP2017157590A (ja) * 2016-02-29 2017-09-07 株式会社東芝 パターン形成方法
KR102650216B1 (ko) * 2018-03-09 2024-03-21 삼성전자주식회사 산화물층의 형성 방법 및 반도체 소자의 제조 방법
FR3102295B1 (fr) * 2019-10-16 2021-11-12 Centre Nat Rech Scient Procédé de lithographie par auto-assemblage dirigé
US12216400B2 (en) * 2021-01-22 2025-02-04 Tokyo Electron Limited Directed self-assembly
CN116217933B (zh) * 2022-11-21 2024-07-02 浙江开化合成材料有限公司 一种聚甲基苯基硅氧烷齐聚物、制备方法及低油离度导热硅脂

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US8147914B2 (en) 2007-06-12 2012-04-03 Massachusetts Institute Of Technology Orientation-controlled self-assembled nanolithography using a block copolymer
WO2009058180A2 (en) * 2007-09-27 2009-05-07 Massachusetts Institute Of Technology Self-assembly technique applicable to large areas and nanofabrication
US8425982B2 (en) * 2008-03-21 2013-04-23 Micron Technology, Inc. Methods of improving long range order in self-assembly of block copolymer films with ionic liquids
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JP4654280B2 (ja) * 2008-08-28 2011-03-16 株式会社日立製作所 微細構造体の製造方法
JP5178401B2 (ja) * 2008-08-29 2013-04-10 株式会社日立製作所 微細構造を有する高分子薄膜およびパターン基板の製造方法
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US8268732B2 (en) * 2009-11-19 2012-09-18 Micron Technology, Inc. Methods of utilizing block copolymers to form patterns
US20110206905A1 (en) 2010-02-05 2011-08-25 The Governors Of The University Of Alberta Method for forming a block copolymer pattern
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US8304493B2 (en) * 2010-08-20 2012-11-06 Micron Technology, Inc. Methods of forming block copolymers

Also Published As

Publication number Publication date
KR20130092510A (ko) 2013-08-20
CN103319931A (zh) 2013-09-25
US8961918B2 (en) 2015-02-24
TW201335287A (zh) 2013-09-01
JP6166906B2 (ja) 2017-07-19
US20130209344A1 (en) 2013-08-15
JP2013175723A (ja) 2013-09-05
TWI498384B (zh) 2015-09-01
KR102129321B1 (ko) 2020-07-02

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