CN103311377A - 一种提升光伏电池片并联电阻的方法 - Google Patents
一种提升光伏电池片并联电阻的方法 Download PDFInfo
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- CN103311377A CN103311377A CN2013102602364A CN201310260236A CN103311377A CN 103311377 A CN103311377 A CN 103311377A CN 2013102602364 A CN2013102602364 A CN 2013102602364A CN 201310260236 A CN201310260236 A CN 201310260236A CN 103311377 A CN103311377 A CN 103311377A
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- 238000000034 method Methods 0.000 title claims abstract description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 61
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 61
- 239000010703 silicon Substances 0.000 claims abstract description 61
- 238000005530 etching Methods 0.000 claims abstract description 44
- 238000002360 preparation method Methods 0.000 claims description 26
- 238000005516 engineering process Methods 0.000 claims description 16
- 235000008216 herbs Nutrition 0.000 claims description 13
- 210000002268 wool Anatomy 0.000 claims description 13
- 238000009792 diffusion process Methods 0.000 claims description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 8
- 229910052698 phosphorus Inorganic materials 0.000 claims description 8
- 239000011574 phosphorus Substances 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 5
- 238000011282 treatment Methods 0.000 claims description 3
- 238000007613 slurry method Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract 2
- 210000004027 cell Anatomy 0.000 description 10
- 239000005360 phosphosilicate glass Substances 0.000 description 8
- 239000010408 film Substances 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical group [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 239000002002 slurry Substances 0.000 description 6
- 239000007788 liquid Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 229910001413 alkali metal ion Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000013532 laser treatment Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 125000004437 phosphorous atom Chemical group 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 210000003850 cellular structure Anatomy 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 230000010148 water-pollination Effects 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Photovoltaic Devices (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201310260236.4A CN103311377B (zh) | 2013-06-26 | 2013-06-26 | 一种提升光伏电池片并联电阻的方法 |
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CN201310260236.4A CN103311377B (zh) | 2013-06-26 | 2013-06-26 | 一种提升光伏电池片并联电阻的方法 |
Publications (2)
Publication Number | Publication Date |
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CN103311377A true CN103311377A (zh) | 2013-09-18 |
CN103311377B CN103311377B (zh) | 2016-05-25 |
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CN201310260236.4A Active CN103311377B (zh) | 2013-06-26 | 2013-06-26 | 一种提升光伏电池片并联电阻的方法 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104253246A (zh) * | 2014-09-23 | 2014-12-31 | 京东方科技集团股份有限公司 | 低温多晶硅薄膜的制作方法、低温多晶硅薄膜及相关器件 |
CN114724942A (zh) * | 2022-04-11 | 2022-07-08 | 西安隆基乐叶光伏科技有限公司 | 一种硅片刻蚀方法及硅片刻蚀系统 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005129714A (ja) * | 2003-10-23 | 2005-05-19 | Sharp Corp | 太陽電池セルの製造方法 |
CN202473944U (zh) * | 2012-02-23 | 2012-10-03 | 常州天合光能有限公司 | 一种防止电池片过刻的硅片保护结构 |
CN102709387A (zh) * | 2012-05-08 | 2012-10-03 | 常州天合光能有限公司 | 选择性发射极刻蚀工艺 |
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2013
- 2013-06-26 CN CN201310260236.4A patent/CN103311377B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005129714A (ja) * | 2003-10-23 | 2005-05-19 | Sharp Corp | 太陽電池セルの製造方法 |
CN202473944U (zh) * | 2012-02-23 | 2012-10-03 | 常州天合光能有限公司 | 一种防止电池片过刻的硅片保护结构 |
CN102709387A (zh) * | 2012-05-08 | 2012-10-03 | 常州天合光能有限公司 | 选择性发射极刻蚀工艺 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104253246A (zh) * | 2014-09-23 | 2014-12-31 | 京东方科技集团股份有限公司 | 低温多晶硅薄膜的制作方法、低温多晶硅薄膜及相关器件 |
CN104253246B (zh) * | 2014-09-23 | 2016-08-17 | 京东方科技集团股份有限公司 | 低温多晶硅薄膜的制作方法、低温多晶硅薄膜及相关器件 |
CN114724942A (zh) * | 2022-04-11 | 2022-07-08 | 西安隆基乐叶光伏科技有限公司 | 一种硅片刻蚀方法及硅片刻蚀系统 |
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Publication number | Publication date |
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CN103311377B (zh) | 2016-05-25 |
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Address after: 213031 Tianhe Road, Tianhe PV Industrial Park, Changzhou, Jiangsu Province, No. 2 Patentee after: trina solar Ltd. Address before: 213031 Tianhe Road, Tianhe PV Industrial Park, Changzhou, Jiangsu Province, No. 2 Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. Address after: 213031 Tianhe Road, Tianhe PV Industrial Park, Changzhou, Jiangsu Province, No. 2 Patentee after: TRINASOLAR Co.,Ltd. Address before: 213031 Tianhe Road, Tianhe PV Industrial Park, Changzhou, Jiangsu Province, No. 2 Patentee before: trina solar Ltd. |
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