CN103311313A - 氧化物薄膜晶体管及其制备方法 - Google Patents
氧化物薄膜晶体管及其制备方法 Download PDFInfo
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- CN103311313A CN103311313A CN2013102498394A CN201310249839A CN103311313A CN 103311313 A CN103311313 A CN 103311313A CN 2013102498394 A CN2013102498394 A CN 2013102498394A CN 201310249839 A CN201310249839 A CN 201310249839A CN 103311313 A CN103311313 A CN 103311313A
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- oxide semiconductor
- thin film
- semiconductor layer
- film transistor
- monolayer
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- 238000012545 processing Methods 0.000 claims abstract description 19
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- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- VVTQWTOTJWCYQT-UHFFFAOYSA-N alumane;neodymium Chemical compound [AlH3].[Nd] VVTQWTOTJWCYQT-UHFFFAOYSA-N 0.000 description 1
- ZTXUGHMGHRMVKB-UHFFFAOYSA-N aluminum;neodymium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Nd+3] ZTXUGHMGHRMVKB-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000000010 aprotic solvent Substances 0.000 description 1
- NGPGDYLVALNKEG-UHFFFAOYSA-N azanium;azane;2,3,4-trihydroxy-4-oxobutanoate Chemical compound [NH4+].[NH4+].[O-]C(=O)C(O)C(O)C([O-])=O NGPGDYLVALNKEG-UHFFFAOYSA-N 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
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- VILAVOFMIJHSJA-UHFFFAOYSA-N dicarbon monoxide Chemical compound [C]=C=O VILAVOFMIJHSJA-UHFFFAOYSA-N 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 1
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- UZLYXNNZYFBAQO-UHFFFAOYSA-N oxygen(2-);ytterbium(3+) Chemical compound [O-2].[O-2].[O-2].[Yb+3].[Yb+3] UZLYXNNZYFBAQO-UHFFFAOYSA-N 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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- PYJJCSYBSYXGQQ-UHFFFAOYSA-N trichloro(octadecyl)silane Chemical compound CCCCCCCCCCCCCCCCCC[Si](Cl)(Cl)Cl PYJJCSYBSYXGQQ-UHFFFAOYSA-N 0.000 description 1
- 229910003454 ytterbium oxide Inorganic materials 0.000 description 1
- 229940075624 ytterbium oxide Drugs 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (10)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310249839.4A CN103311313B (zh) | 2013-06-21 | 2013-06-21 | 氧化物薄膜晶体管及其制备方法 |
PCT/CN2013/089151 WO2014201816A1 (zh) | 2013-06-21 | 2013-12-12 | 氧化物薄膜晶体管及其制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310249839.4A CN103311313B (zh) | 2013-06-21 | 2013-06-21 | 氧化物薄膜晶体管及其制备方法 |
Publications (2)
Publication Number | Publication Date |
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CN103311313A true CN103311313A (zh) | 2013-09-18 |
CN103311313B CN103311313B (zh) | 2017-02-08 |
Family
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Family Applications (1)
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CN201310249839.4A Active CN103311313B (zh) | 2013-06-21 | 2013-06-21 | 氧化物薄膜晶体管及其制备方法 |
Country Status (2)
Country | Link |
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CN (1) | CN103311313B (zh) |
WO (1) | WO2014201816A1 (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103630577A (zh) * | 2013-12-09 | 2014-03-12 | 电子科技大学 | 一种基于有机薄膜晶体管二氧化硫气体传感器的制备方法 |
WO2014201816A1 (zh) * | 2013-06-21 | 2014-12-24 | 华南理工大学 | 氧化物薄膜晶体管及其制备方法 |
CN107833927A (zh) * | 2017-11-16 | 2018-03-23 | 佛山科学技术学院 | 一种氧化物薄膜晶体管及其制备方法 |
CN110416087A (zh) * | 2019-07-29 | 2019-11-05 | 北方民族大学 | 具有钝化增强层的金属氧化物薄膜晶体管及其制作方法 |
CN111223939A (zh) * | 2019-10-31 | 2020-06-02 | 福建华佳彩有限公司 | 双通道的氧化物薄膜晶体管 |
CN112864254A (zh) * | 2021-04-06 | 2021-05-28 | 京东方科技集团股份有限公司 | 一种薄膜晶体管及其制作方法、阵列基板及显示装置 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060289858A1 (en) * | 2005-06-28 | 2006-12-28 | Park Hyun J | Organic thin film transistor(s) and method(s) for fabricating the same |
US20090140243A1 (en) * | 2007-11-30 | 2009-06-04 | Samsung Electronics Co., Ltd. | Oxide semiconductor thin film transistors and fabrication methods thereof |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200731589A (en) * | 2006-02-06 | 2007-08-16 | Yang Jae Woo | Organic thin film transistor using ultra-thin metal oxide as gate dielectric and fabrication method thereof |
CN100514698C (zh) * | 2007-12-20 | 2009-07-15 | 北京交通大学 | 有机薄膜晶体管的制造方法 |
CN101599437B (zh) * | 2009-07-23 | 2011-07-27 | 复旦大学 | 薄膜晶体管的制备方法 |
CN103311313B (zh) * | 2013-06-21 | 2017-02-08 | 华南理工大学 | 氧化物薄膜晶体管及其制备方法 |
-
2013
- 2013-06-21 CN CN201310249839.4A patent/CN103311313B/zh active Active
- 2013-12-12 WO PCT/CN2013/089151 patent/WO2014201816A1/zh active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060289858A1 (en) * | 2005-06-28 | 2006-12-28 | Park Hyun J | Organic thin film transistor(s) and method(s) for fabricating the same |
CN1893141A (zh) * | 2005-06-28 | 2007-01-10 | 三星电子株式会社 | 有机薄膜晶体管及其制造方法 |
US20090140243A1 (en) * | 2007-11-30 | 2009-06-04 | Samsung Electronics Co., Ltd. | Oxide semiconductor thin film transistors and fabrication methods thereof |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014201816A1 (zh) * | 2013-06-21 | 2014-12-24 | 华南理工大学 | 氧化物薄膜晶体管及其制备方法 |
CN103630577A (zh) * | 2013-12-09 | 2014-03-12 | 电子科技大学 | 一种基于有机薄膜晶体管二氧化硫气体传感器的制备方法 |
CN107833927A (zh) * | 2017-11-16 | 2018-03-23 | 佛山科学技术学院 | 一种氧化物薄膜晶体管及其制备方法 |
CN110416087A (zh) * | 2019-07-29 | 2019-11-05 | 北方民族大学 | 具有钝化增强层的金属氧化物薄膜晶体管及其制作方法 |
CN111223939A (zh) * | 2019-10-31 | 2020-06-02 | 福建华佳彩有限公司 | 双通道的氧化物薄膜晶体管 |
CN112864254A (zh) * | 2021-04-06 | 2021-05-28 | 京东方科技集团股份有限公司 | 一种薄膜晶体管及其制作方法、阵列基板及显示装置 |
Also Published As
Publication number | Publication date |
---|---|
WO2014201816A1 (zh) | 2014-12-24 |
CN103311313B (zh) | 2017-02-08 |
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