CN103296224B - 制备有机发光装置的方法 - Google Patents
制备有机发光装置的方法 Download PDFInfo
- Publication number
- CN103296224B CN103296224B CN201310060186.5A CN201310060186A CN103296224B CN 103296224 B CN103296224 B CN 103296224B CN 201310060186 A CN201310060186 A CN 201310060186A CN 103296224 B CN103296224 B CN 103296224B
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- organic
- inorganic
- inorganic material
- inorganic layer
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- 238000000034 method Methods 0.000 title claims abstract description 55
- 229910010272 inorganic material Inorganic materials 0.000 claims abstract description 105
- 239000011147 inorganic material Substances 0.000 claims abstract description 104
- 238000011084 recovery Methods 0.000 claims abstract description 66
- 239000010409 thin film Substances 0.000 claims abstract description 49
- 238000005538 encapsulation Methods 0.000 claims abstract description 45
- 230000007613 environmental effect Effects 0.000 claims abstract description 40
- 230000007704 transition Effects 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 230000008569 process Effects 0.000 claims abstract description 9
- 239000010410 layer Substances 0.000 claims description 189
- 239000012044 organic layer Substances 0.000 claims description 62
- 239000000463 material Substances 0.000 claims description 34
- 239000002243 precursor Substances 0.000 claims description 25
- 238000004925 denaturation Methods 0.000 claims description 24
- 230000036425 denaturation Effects 0.000 claims description 24
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 20
- 239000001301 oxygen Substances 0.000 claims description 20
- 229910052760 oxygen Inorganic materials 0.000 claims description 20
- 229910008449 SnF 2 Inorganic materials 0.000 claims description 16
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- 239000000243 solution Substances 0.000 claims description 11
- 239000002245 particle Substances 0.000 claims description 10
- 238000009832 plasma treatment Methods 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 7
- 230000005855 radiation Effects 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 229910000149 boron phosphate Inorganic materials 0.000 claims description 5
- 239000012298 atmosphere Substances 0.000 claims description 4
- 239000012530 fluid Substances 0.000 claims description 4
- 229920000642 polymer Polymers 0.000 claims description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 4
- 229910001887 tin oxide Inorganic materials 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 3
- 239000003513 alkali Substances 0.000 claims description 3
- 239000012670 alkaline solution Substances 0.000 claims description 3
- YZYDPPZYDIRSJT-UHFFFAOYSA-K boron phosphate Chemical compound [B+3].[O-]P([O-])([O-])=O YZYDPPZYDIRSJT-UHFFFAOYSA-K 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 3
- 238000007733 ion plating Methods 0.000 claims description 3
- 230000007935 neutral effect Effects 0.000 claims description 3
- 229910000484 niobium oxide Inorganic materials 0.000 claims description 3
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 3
- 229910001392 phosphorus oxide Inorganic materials 0.000 claims description 3
- YUOWTJMRMWQJDA-UHFFFAOYSA-J tin(iv) fluoride Chemical compound [F-].[F-].[F-].[F-].[Sn+4] YUOWTJMRMWQJDA-UHFFFAOYSA-J 0.000 claims description 3
- 229910001930 tungsten oxide Inorganic materials 0.000 claims description 3
- 238000001771 vacuum deposition Methods 0.000 claims description 3
- 150000002823 nitrates Chemical class 0.000 claims description 2
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims description 2
- ANOBYBYXJXCGBS-UHFFFAOYSA-L stannous fluoride Chemical compound F[Sn]F ANOBYBYXJXCGBS-UHFFFAOYSA-L 0.000 claims description 2
- VSAISIQCTGDGPU-UHFFFAOYSA-N tetraphosphorus hexaoxide Chemical compound O1P(O2)OP3OP1OP2O3 VSAISIQCTGDGPU-UHFFFAOYSA-N 0.000 claims description 2
- 230000009466 transformation Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 18
- 239000000203 mixture Substances 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 9
- 230000007547 defect Effects 0.000 description 8
- 238000002411 thermogravimetry Methods 0.000 description 8
- 238000005452 bending Methods 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000011575 calcium Substances 0.000 description 4
- 239000005447 environmental material Substances 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- 239000011368 organic material Substances 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 238000000113 differential scanning calorimetry Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 229910001148 Al-Li alloy Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- JHYLKGDXMUDNEO-UHFFFAOYSA-N [Mg].[In] Chemical compound [Mg].[In] JHYLKGDXMUDNEO-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000001723 curing Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000008393 encapsulating agent Substances 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 238000009966 trimming Methods 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- 238000003848 UV Light-Curing Methods 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 125000004386 diacrylate group Chemical group 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 238000000869 ion-assisted deposition Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- IMKMFBIYHXBKRX-UHFFFAOYSA-M lithium;quinoline-2-carboxylate Chemical compound [Li+].C1=CC=CC2=NC(C(=O)[O-])=CC=C21 IMKMFBIYHXBKRX-UHFFFAOYSA-M 0.000 description 1
- 150000002734 metacrylic acid derivatives Chemical class 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- VVRQVWSVLMGPRN-UHFFFAOYSA-N oxotungsten Chemical class [W]=O VVRQVWSVLMGPRN-UHFFFAOYSA-N 0.000 description 1
- LFGREXWGYUGZLY-UHFFFAOYSA-N phosphoryl Chemical class [P]=O LFGREXWGYUGZLY-UHFFFAOYSA-N 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 235000010333 potassium nitrate Nutrition 0.000 description 1
- 239000004323 potassium nitrate Substances 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000012798 spherical particle Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 238000002076 thermal analysis method Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2012-0022041 | 2012-03-02 | ||
| KR1020120022041A KR101347541B1 (ko) | 2012-03-02 | 2012-03-02 | 유기 발광 장치의 제조 방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103296224A CN103296224A (zh) | 2013-09-11 |
| CN103296224B true CN103296224B (zh) | 2017-09-22 |
Family
ID=47884154
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310060186.5A Active CN103296224B (zh) | 2012-03-02 | 2013-02-26 | 制备有机发光装置的方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9276234B2 (enExample) |
| EP (1) | EP2634830B1 (enExample) |
| JP (1) | JP6216517B2 (enExample) |
| KR (1) | KR101347541B1 (enExample) |
| CN (1) | CN103296224B (enExample) |
| TW (1) | TWI580094B (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101473310B1 (ko) * | 2012-12-06 | 2014-12-16 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조방법 |
| KR20140120541A (ko) * | 2013-04-03 | 2014-10-14 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
| KR102072805B1 (ko) * | 2013-04-15 | 2020-02-04 | 삼성디스플레이 주식회사 | 유기발광표시장치 및 그의 제조방법 |
| KR102085319B1 (ko) * | 2013-07-30 | 2020-03-06 | 삼성디스플레이 주식회사 | 유기 발광 디스플레이 장치 및 이의 제조 방법 |
| KR102192589B1 (ko) * | 2014-08-08 | 2020-12-18 | 삼성디스플레이 주식회사 | 플렉서블 디스플레이 장치 |
| KR102648401B1 (ko) * | 2016-09-30 | 2024-03-18 | 삼성디스플레이 주식회사 | 디스플레이 장치 |
| TWI774184B (zh) | 2020-03-18 | 2022-08-11 | 日商日本航空電子工業股份有限公司 | 可薄型化半導體裝置及其製造方法 |
| JP7591885B2 (ja) | 2020-08-03 | 2024-11-29 | 日本航空電子工業株式会社 | デバイス |
| CN112993191B (zh) * | 2021-02-09 | 2022-07-12 | 江苏集萃有机光电技术研究所有限公司 | 一种oled器件封装结构及其制备方法和应用 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1527644A (zh) * | 2003-03-07 | 2004-09-08 | 友达光电股份有限公司 | 一种有机发光显示器的制备方法 |
| CN101256970A (zh) * | 2007-02-28 | 2008-09-03 | 康宁股份有限公司 | 使用烧结温度低的含锡无机材料进行气密性密封 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7074501B2 (en) * | 2001-08-20 | 2006-07-11 | Nova-Plasma Inc. | Coatings with low permeation of gases and vapors |
| US7247986B2 (en) * | 2003-06-10 | 2007-07-24 | Samsung Sdi. Co., Ltd. | Organic electro luminescent display and method for fabricating the same |
| JP5124083B2 (ja) | 2004-06-09 | 2013-01-23 | 三星ディスプレイ株式會社 | 有機電界発光表示装置及びその製造方法 |
| US7214600B2 (en) * | 2004-06-25 | 2007-05-08 | Applied Materials, Inc. | Method to improve transmittance of an encapsulating film |
| KR20060067504A (ko) | 2004-12-15 | 2006-06-20 | 주식회사 대우일렉트로닉스 | 유기 전계 발광 소자용 글래스 봉지 캡의 제조 방법 |
| JP4671201B2 (ja) * | 2005-07-19 | 2011-04-13 | パイオニア株式会社 | 保護膜製造方法、無機膜製造方法 |
| US20070040501A1 (en) * | 2005-08-18 | 2007-02-22 | Aitken Bruce G | Method for inhibiting oxygen and moisture degradation of a device and the resulting device |
| US7722929B2 (en) | 2005-08-18 | 2010-05-25 | Corning Incorporated | Sealing technique for decreasing the time it takes to hermetically seal a device and the resulting hermetically sealed device |
| US7829147B2 (en) | 2005-08-18 | 2010-11-09 | Corning Incorporated | Hermetically sealing a device without a heat treating step and the resulting hermetically sealed device |
| WO2007023708A1 (ja) | 2005-08-25 | 2007-03-01 | Asahi Glass Company, Limited | 膜付き基体および膜形成用ガラス |
| JP4809186B2 (ja) * | 2006-10-26 | 2011-11-09 | 京セラ株式会社 | 有機ｅｌディスプレイおよびその製造方法 |
| US20080290798A1 (en) * | 2007-05-22 | 2008-11-27 | Mark Alejandro Quesada | LLT barrier layer for top emission display device, method and apparatus |
| KR100875099B1 (ko) * | 2007-06-05 | 2008-12-19 | 삼성모바일디스플레이주식회사 | 유기 발광 장치 및 이의 제조 방법 |
| KR100882668B1 (ko) * | 2007-07-18 | 2009-02-06 | 삼성모바일디스플레이주식회사 | 유기전계발광 표시 장치 및 그의 제조 방법 |
| US20090191355A1 (en) * | 2008-01-28 | 2009-07-30 | Hee Hyun Lee | Methods for forming a thin layer of particulate on a substrate |
| JPWO2009099252A1 (ja) * | 2008-02-08 | 2011-06-02 | 東京エレクトロン株式会社 | 絶縁膜のプラズマ改質処理方法 |
| KR100926030B1 (ko) | 2008-02-25 | 2009-11-11 | 한국과학기술연구원 | 산소와 수분 투과의 차단 및 가스 배리어 특성 향상을 위한유/무기 복합 박막 보호층 및 그의 제조방법 |
| KR101097321B1 (ko) | 2009-12-14 | 2011-12-23 | 삼성모바일디스플레이주식회사 | 유기 발광 장치 및 이의 제조 방법 |
-
2012
- 2012-03-02 KR KR1020120022041A patent/KR101347541B1/ko active Active
- 2012-09-07 US US13/607,311 patent/US9276234B2/en active Active
-
2013
- 2013-02-26 CN CN201310060186.5A patent/CN103296224B/zh active Active
- 2013-02-27 JP JP2013037599A patent/JP6216517B2/ja active Active
- 2013-02-27 TW TW102106835A patent/TWI580094B/zh active
- 2013-03-01 EP EP13157490.7A patent/EP2634830B1/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1527644A (zh) * | 2003-03-07 | 2004-09-08 | 友达光电股份有限公司 | 一种有机发光显示器的制备方法 |
| CN101256970A (zh) * | 2007-02-28 | 2008-09-03 | 康宁股份有限公司 | 使用烧结温度低的含锡无机材料进行气密性密封 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2634830B1 (en) | 2017-12-06 |
| TWI580094B (zh) | 2017-04-21 |
| TW201338236A (zh) | 2013-09-16 |
| US9276234B2 (en) | 2016-03-01 |
| KR20130130177A (ko) | 2013-12-02 |
| JP6216517B2 (ja) | 2017-10-18 |
| US20130230664A1 (en) | 2013-09-05 |
| JP2013182888A (ja) | 2013-09-12 |
| EP2634830A1 (en) | 2013-09-04 |
| CN103296224A (zh) | 2013-09-11 |
| KR101347541B1 (ko) | 2014-01-06 |
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