CN103296142A - Ultraviolet detector preparation method based on fluorescence coating integrating sphere - Google Patents

Ultraviolet detector preparation method based on fluorescence coating integrating sphere Download PDF

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Publication number
CN103296142A
CN103296142A CN2013102288428A CN201310228842A CN103296142A CN 103296142 A CN103296142 A CN 103296142A CN 2013102288428 A CN2013102288428 A CN 2013102288428A CN 201310228842 A CN201310228842 A CN 201310228842A CN 103296142 A CN103296142 A CN 103296142A
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China
Prior art keywords
integrating sphere
detector
ultraviolet
hemisphere
silicon substrate
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CN2013102288428A
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CN103296142B (en
Inventor
陶春先
卢忠荣
张大伟
何梁
洪瑞金
黄元申
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University of Shanghai for Science and Technology
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University of Shanghai for Science and Technology
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention relates to an ultraviolet detector preparation method based on a fluorescence coating integrating sphere. The ultraviolet detector preparation method comprises the steps of polishing the inner surface of an integrating sphere body, and enabling an inner wall of the integrating sphere body to be coated evenly with a layer of fluorescence film in a vacuum or rotating coating mode; opening a groove at the bottom of an integrating hemisphere, enabling a silicon substrate detector to be embedded in the groove to serve as an ultraviolet light signal receiver, opening a hole on a combined round edge of the two integrating hemispheres to enable the hole to serve as an incidence hole; and due to the fact the emission wavelength of the fluorescence film is within a sensitive band of the silicon substrate detector, enabling the ultraviolet light to be instantly received by the silicon substrate detector after the ultraviolet light is reflected for many times through the inner surface of the integrating sphere, so that sensitive response of the silicon substrate detector to ultraviolet signals is achieved. A protecting glass window or the photosensitive surface of a silicon substrate imaging device does not need to be coated with a film, damage of the device caused by window removal operation of the detector is avoided; simultaneously, on the basis of repeated excitation luminescence for ultraviolet light reflection inside the integrating sphere, fluorescence efficiency and total energy are greatly improved, precise detection of the ultraviolet light is achieved conveniently, effect is good, and the cost is low.

Description

A kind of ultraviolet detector preparation method based on the fluoresent coating integrating sphere
Technical field
The present invention relates to a kind of ultraviolet detection technology, particularly a kind of ultraviolet detector preparation method based on the fluoresent coating integrating sphere.
Background technology
The ultraviolet detection technology is a kind of important photoelectric detecting technology, and its application has been deep into numerous areas such as military exercises, astrosurveillance, environmental monitoring, medical bio analysis, and modern national defense and people's lives have been produced profound influence.Image device in the detector can only be surveyed visible waveband and two zones of infrared band as CCD, CMOS etc., but it is very weak in the ultraviolet band response.This be because the degree of depth that in polysilicon, penetrates of ultraviolet light very little (<2nm).Since CCD and the commodity production of other photodetectors input, people just are devoted to seek a kind of detector that can improve to the method for ultraviolet band susceptibility always.Feasible way has two kinds at present: (one) increases ultraviolet light response by changing over picture device inside silicon substrate structure.Because ultraviolet light penetration depth in silica-based is very little, can carry on the back the mode of photograph and survey, and reduces absorber thickness.But because the silicon materials energy gap is less, and the ultraviolet photon energy is higher, so realize the silicon ultraviolet light detector technically big difficulty is arranged, and will change the image device production line of existing maturation, thereby has improved production cost.(2) be coated with the fluorescence membrane that the response of one deck ultraviolet strengthens at photosurface.This layer film can convert the ultraviolet light of incident to the visible light wave range of silicon-based detector sensitivity, indirect realization ultraviolet detection.But it has but reduced sensitivity and the picture resolution of device to visible light itself, has increased the response inhomogeneities of imageing sensor.
Summary of the invention
The present invention be directed to detector to the problem of ultraviolet band susceptibility difference, a kind of ultraviolet detector preparation method based on the fluoresent coating integrating sphere has been proposed, fluorescence membrane directly is coated on the integrating sphere inwall, both overcome the technological problems of detector photosurface plated film, and film influences the problems such as sensitivity, resolution and response inhomogeneities difference of device itself.
Technical scheme of the present invention is: a kind of ultraviolet detector preparation method based on the fluoresent coating integrating sphere specifically comprises the steps:
1) integrating sphere is divided into two hemisphere, with the polishing of integrating sphere inner surface, and at the semicircle orifice of on the round edge of two integration hemisphere, respectively opening same radius;
2) evenly plate one deck fluorescence membrane by vacuum or spin coating film plating process at the integrating sphere inwall;
3) two hemisphere after will processing are encapsulated as a complete spheroid, and the semicircle orifice of two hemisphere is over against becoming a circular hole, as going into perforation;
4) the two hemispheres faying face is as horizontal plane, and at the bottom slot of integrating sphere and embed the silicon-based detector part as the receiver of ultraviolet signal, the receiver receiving plane is consistent with the integrating sphere inwall;
5) flashlight of incident repeatedly reflects the back in inside and is received by the silicon-based detector part by after going into perforation and entering integrating sphere.
The used fluorescent material of described fluorescence membrane is the organic or inorganic material with burst of ultraviolel emission characteristics.
Described integrating sphere adopts metal or plastic material.
Beneficial effect of the present invention is: the ultraviolet detector and the preparation method that the present invention is based on the fluoresent coating integrating sphere; not be used in plated film on the cover glass window of silica-based image device or the photosurface; avoided detector except the damage of window operation to device; simultaneously based on the repeatedly excitation luminescence that in the integrating sphere ultraviolet light is reflected; fluorescence efficiency and gross energy have greatly been improved; realized ultraviolet accurate detection easily, effective, with low cost.
Description of drawings
Fig. 1 is the ultraviolet detector schematic diagram that the present invention is based on the fluoresent coating integrating sphere.
Embodiment
Ultraviolet detector based on the fluoresent coating integrating sphere is to adopt integrating sphere as the gatherer of flashlight and to visible light-responded silicon-based detector.Preparation method's step is as follows:
1) integrating sphere adopts metal or plastic material, and the inner surface polishing is to guarantee adhesive force firm between spherome surface and rete;
2) schematic diagram as shown in Figure 1, spheroid is divided into two hemisphere, respectively opens the semicircle orifice of same radius on the round edge of two integration hemisphere, by film plating process such as vacuum or spin coatings at the even plated film 2 of integrating sphere inwall; Be to guarantee membrane uniformity, during true plated film hemisphere is adopted at the uniform velocity rotation mode; Used Coating Materials is fluorescent material, has the burst of ultraviolel emission characteristics, has the luminous organic or inorganic material of the stimulated luminescence of translation function down as road horse nearly (Lumogen), coronene (Coronene) etc. are any, but is not limited thereto;
3) two hemisphere tightly are packaged into a complete spheroid after machining, the semicircle orifice of two hemisphere is over against becoming a circular hole, and as incoming signal receiver hole 1, ultraviolet ray enters integrating sphere inside by this perforate.The flashlight of incident is integrated ball inwall fluorescence membrane coating and repeatedly reflects, and fluorescent material is subjected to ultraviolet excitation generation energy level to swash transition and sends visible light at the utmost point in the short time;
4) integrating sphere bottom with go into perforation and become 90 ° of directions to open a rectangular channel (to suppose that an incident ultraviolet ray is respectively by going into the center of circle of perforation and integrating sphere, this incident light direction 90 ° of positions pointed that turn clockwise are the center of rectangular channel), the size of this rectangular channel is with the size unanimity of silicon-based detector part, embed CCD or CMOS silicon-based devices then as the receiver of ultraviolet signal, the receiver receiving plane is consistent with the integrating sphere inwall.Silicon-based detector 3 is shone the common silica-based image device of formula before having adopted CCD or CMOS etc., can be only to visible light-responded;
5) because the emission wavelength of fluorescence membrane at the sensitive band of silicon-based detector, repeatedly reflects back moment through the integrating sphere inwall and received by silicon-based detector part 3, realized the sensitivity response of silicon-based detector to UV signal.
Fluorescence membrane 2 is close to the integrating sphere inwall, goes into perforation 1 when incident uv by integrating sphere, enter integrating sphere inside after, can realize repeatedly reflecting, in the extremely short time, realize the frequency conversion conversion, so energy absorption is abundant, the emission light signal is stronger, and the conversion efficiency of fluorescence membrane is higher.Because wavelength of transmitted light just in time is in the sensitive response wave band of silicon-based detector 3 response spectrums, explorer response sensitivity.
Embodiment: adopt the light-weight metal aluminum to make one 6 inches spheroid, spheroid is divided into 2 hemisphere; Adopt the internal surface finish of special-purpose chemical reagent; Respectively open the semicircle orifice of same radius on the round edge of two integration hemisphere, merge the back as entrance pupil; Adopt the plated film mode of vacuum thermal evaporation, at integrating sphere inwall deposition one deck Lumogen fluorescence membrane; Adopt the method for mechanical fasteners to be assembled into a complete spheroid spheroid, and integrating sphere bottom with go into perforation and become 90 ° of directions to open a rectangular opening, and the line array CCD that to fix a model be ILX55B, the outer mounting and fixing bracket of spheroid is namely made a ultraviolet detector.

Claims (3)

1. the ultraviolet detector preparation method based on the fluoresent coating integrating sphere is characterized in that, specifically comprises the steps:
1) integrating sphere is two hemisphere, with the polishing of integrating sphere inner surface, and at the semicircle orifice of on the round edge of two integration hemisphere, respectively opening same radius;
2) evenly plate one deck fluorescence membrane by vacuum or spin coating film plating process at the integrating sphere inwall;
3) two hemisphere after will processing are encapsulated as a complete spheroid, and the semicircle orifice of two hemisphere is over against becoming a circular hole, as going into perforation;
4) the two hemispheres faying face is as horizontal plane, and at the bottom slot of integrating sphere and embed the silicon-based detector part as the receiver of ultraviolet signal, the receiver receiving plane is consistent with the integrating sphere inwall;
5) flashlight of incident repeatedly reflects the back in inside and is received by the silicon-based detector part by after going into perforation and entering integrating sphere.
2. according to the described ultraviolet detector preparation method based on the fluoresent coating integrating sphere of claim 1, it is characterized in that the used fluorescent material of described fluorescence membrane is the organic or inorganic material with burst of ultraviolel emission characteristics.
3. according to the described ultraviolet detector preparation method based on the fluoresent coating integrating sphere of claim 1, it is characterized in that described integrating sphere adopts metal or plastic material.
CN201310228842.8A 2013-06-09 2013-06-09 A kind of ultraviolet detector preparation method based on fluoresent coating integrating sphere Expired - Fee Related CN103296142B (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106980137A (en) * 2017-05-12 2017-07-25 中国工程物理研究院核物理与化学研究所 A kind of fast neutron detector

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000321128A (en) * 1999-05-14 2000-11-24 Canon Inc Integrating sphere and spectroscopic measuring apparatus employing it
DE10002294A1 (en) * 2000-01-20 2001-07-26 Philips Corp Intellectual Pty Reflection ability measurement device for optical system, has sphere coated with luminescent substance on entire inner surface
KR100420144B1 (en) * 1998-06-30 2004-04-17 삼성에스디아이 주식회사 Fluorescent material optical property measuring device
CN102538968A (en) * 2011-12-29 2012-07-04 中国科学院长春光学精密机械与物理研究所 Vacuum ultraviolet hemisphere reflectivity testing device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100420144B1 (en) * 1998-06-30 2004-04-17 삼성에스디아이 주식회사 Fluorescent material optical property measuring device
JP2000321128A (en) * 1999-05-14 2000-11-24 Canon Inc Integrating sphere and spectroscopic measuring apparatus employing it
DE10002294A1 (en) * 2000-01-20 2001-07-26 Philips Corp Intellectual Pty Reflection ability measurement device for optical system, has sphere coated with luminescent substance on entire inner surface
CN102538968A (en) * 2011-12-29 2012-07-04 中国科学院长春光学精密机械与物理研究所 Vacuum ultraviolet hemisphere reflectivity testing device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106980137A (en) * 2017-05-12 2017-07-25 中国工程物理研究院核物理与化学研究所 A kind of fast neutron detector

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