CN108426833A - A kind of complete or collected works' accepted way of doing sth infrared gas sensor based on box-like air chamber structure - Google Patents
A kind of complete or collected works' accepted way of doing sth infrared gas sensor based on box-like air chamber structure Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 65
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 63
- 239000010703 silicon Substances 0.000 claims abstract description 63
- 238000000034 method Methods 0.000 claims description 24
- 238000005260 corrosion Methods 0.000 claims description 11
- 230000007797 corrosion Effects 0.000 claims description 11
- 230000003287 optical effect Effects 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- 238000001259 photo etching Methods 0.000 claims description 8
- 238000001312 dry etching Methods 0.000 claims description 7
- 238000012360 testing method Methods 0.000 claims description 7
- 238000001514 detection method Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 238000001039 wet etching Methods 0.000 claims description 6
- 238000002360 preparation method Methods 0.000 claims description 5
- 239000000919 ceramic Substances 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 33
- 238000012545 processing Methods 0.000 description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 230000000712 assembly Effects 0.000 description 4
- 238000000429 assembly Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 3
- 229910052753 mercury Inorganic materials 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- 230000005518 electrochemistry Effects 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3504—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing gases, e.g. multi-gas analysis
- G01N21/3518—Devices using gas filter correlation techniques; Devices using gas pressure modulation techniques
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Abstract
The present invention relates to a kind of complete or collected works' accepted way of doing sth infrared gas sensor based on box-like air chamber structure, belongs to gas sensor domain.Gas chamber and integrated circuit modules are integrated including box-like；The box-like integrates gas chamber and integrated circuit modules and assembling is laminated by the modes such as being bonded or being bonded；Wherein, it includes stomata layer silicon-based wafer and unthreaded hole layer silicon-based wafer that box-like, which integrates gas chamber,；Stomata layer silicon-based wafer and unthreaded hole layer silicon-based wafer combine by bonding or bonding way and to form gas chamber；Infrared light enters the box-like with reflective inner wall groove and integrates gas chamber, box-like integrate multiple reflections can occur in gas chamber after received again by infrared detector, this box-like with reflective inner wall groove integrates gas chamber and can guarantee that infrared light with longer light path, improves the detectivity of infrared gas sensor.The present invention is compared with the infrared gas sensor of S types or snakelike air chamber structure, the efficiency of transmission higher of infrared light, detectivity higher.
Description
Technical field
The invention belongs to gas sensor domains, are related to a kind of complete or collected works' accepted way of doing sth infrared-gas biography based on box-like air chamber structure
Sensor.
Background technology
Gas sensor largely uses in fields such as production scene monitoring, gas ductwork monitoring, environmental monitorings, with Internet of Things
To the growing interest of quality of air environment, the application demand of gas sensor is at full speed by the rapid developments of new industries such as net, people
Increase.Gas sensor includes mainly that types, these sensors such as semi-conductor type, catalytic combustion-type and electrochemistry type are in use
Greatest problem be poor selectivity to gas, there are cross jamming infrared gas sensors based on gas point between gas with various
Son works for the selective absorbing principle of specific wavelength infrared light.With semi-conductor type, catalytic combustion-type and electrochemistry type gas
Sensor is compared, and infrared gas sensor has high selectivity, can realize that " fingerprint characteristic formula " is identified to gas.
Infrared gas sensor develops since last century the '30s, and gas chamber is infrared gas sensor mid-infrared light line
The channel that transmission, infrared light and under test gas interact, is the necessary component of infrared gas sensor, gas chamber is set
Meter has directly influence for sensitivity, response time of infrared gas sensor etc..The gas chamber master of infrared gas sensor
To include direct-injection type and reflective, be to ensure that the miniaturization of sensor and infrared energy repeatedly pass through tested gas, optics gas
The light path of room is usually designed to reflective, such relative increase distance of light path, to improving the accuracy of detection of sensor.
But in view of each reflection light energy can all have certain decaying, the order of reflection that light selection is reflected in gas chamber can not mistake
It is more.Therefore how to ensure that the decaying of light ray energy can be reduced while long light path, to increase infrared gas sensor
Sensitivity and precision be the key that research.
Currently, it is one end of representative mainly to have publication number CN102279167A for the research of the gas chamber of infrared gas sensor
Reflection type mirror gas chamber, elliptical reflecting structure gas chamber, the publication number CN101825566A that publication number CN101004380A is representative
For the ring type structure gas chamber etc. of representative.Using above-mentioned air chamber structure, lead to the infrared gas sensor prepared there are integrated levels it is low,
The problems such as volume is big.Therefore, to improve the integrated level of infrared gas sensor, fully integrated infrared gas sensor is developed, need to be opened
Open up the research of small size, integrated air chamber structure.Publication number CN103245634A provides one kind by under substrate, pit on pit
Substrate is bonded the integrated air chamber structure that false piece forms, and the single-chip integration formula infrared-gas sensing of air chamber structure is integrated based on this
Device, but infrared light supply and infrared detector are placed in inside gas chamber absorbing cavity in the sensor, cause gas to be made with infrared light
Effective light path is shorter, and sensor detectivity is relatively low.The offers such as CN104677851A, CN105181621A it is fully integrated
Infrared gas sensor uses S types or snakelike air chamber structure, need to open up air admission hole in narrow gas channels, the meeting from air admission hole
Cause a large amount of infrared lights to be lost, cause infrared light by less efficient, influence the sensitivity of infrared gas sensor.
Invention content
In view of this, the purpose of the present invention is to provide a kind of, complete or collected works' accepted way of doing sth infrared-gas based on box-like air chamber structure passes
Sensor, specific structure include：Box-like integrates gas chamber and integrated circuit modules.Box-like integrates gas chamber and integrated circuit modules are logical
It crosses the modes such as bonding, bonding and assembling is laminated.Wherein, it includes that stomata layer silicon-based wafer and unthreaded hole layer silicon substrate are brilliant that box-like, which integrates gas chamber,
Circle, two panels silicon-based wafer combine to form gas chamber by the modes such as being bonded, being bonded.Etching is fluted in unthreaded hole layer silicon-based wafer, and
Offer the incidence hole and light hole being connected to interior grooves.Etching is fluted in stomata layer silicon-based wafer, and offer with it is interior
The stomata of portion's groove connection.Integrated circuit modules are to be integrated with infrared light supply, optical filter, infrared by SoC forms or SiP forms
The silicon chip or ceramic substrate of detector and signal processing circuit, infrared light supply, infrared detector are respectively aligned to entering for unthreaded hole layer
Unthreaded hole and light hole.
In order to achieve the above objectives, the present invention provides the following technical solutions：
A kind of complete or collected works' accepted way of doing sth infrared gas sensor based on box-like air chamber structure, including box-like integrate gas chamber and integrated electricity
Road module；The box-like integrates gas chamber and integrated circuit modules and passes through bonding or bonding way stacking assembling；
Wherein, it includes stomata layer silicon-based wafer and unthreaded hole layer silicon-based wafer that box-like, which integrates gas chamber,；Stomata layer silicon-based wafer and
Unthreaded hole layer silicon-based wafer combines by bonding or bonding way and to form gas chamber；
Etching is fluted in unthreaded hole layer silicon-based wafer, and offers the incidence hole and light hole being connected to interior grooves, enters
Unthreaded hole and light hole are in the diagonal position of groove, and groove surfaces are coated with the reflective film more than 0.5 to infrared light reflection coefficient；
Etching is fluted in stomata layer silicon-based wafer, and offers the stomata being connected to interior grooves；Recess region has more
A stomata being connected to groove, groove surfaces are coated with the reflective film more than 0.5 to infrared light reflection coefficient；
The groove of stomata layer silicon-based wafer is identical as the length and width size of groove of stomata layer silicon-based wafer；
Integrated circuit modules are to integrate infrared light supply, optical filter, infrared detector and letter by SoC forms or SiP forms
The silicon chip or ceramic substrate of number processing circuit, infrared light supply, infrared detector are respectively aligned to the incidence hole and light extraction of unthreaded hole layer
Hole.
Further, the groove is processed by the lithographic method of dry etching or wet etching.
Further, the stomata is in groined type or quincunx arrangement.
Further, the stomata layer silicon-based wafer is equipped with reflective wimble structure, including conical incidence hole reflective cone and circular cone
Shape light hole reflective cone, the angle between the conical surface and stomata trapezoidal groove of reflective cone should be between 30 °~60 °；It is described enter
Unthreaded hole reflective cone and conical light hole reflective cone are coated with the reflective film to infrared light reflection coefficient more than 0.5.
Further, the geometric center of the incidence hole reflective cone is located at right over unthreaded hole layer silicon-based wafer incidence hole, stomata
The geometric center of layer silicon-based wafer light hole reflective cone is located at right over unthreaded hole layer silicon-based wafer light hole.
Further, the preparation process of the reflective wimble structure is the anisotropic corrosion technique using silicon, first specific
Orientation monocrystalline substrate on carry out photoetching, in photoetching process graphical treatment, on incidence hole and light hole corresponding position
It reserves circular pattern, and processes conical incidence hole reflective cone using anisotropic corrosion technique and conical light hole is anti-
Light cone；Secondly, by the method for dry etching or wet etching, quincunx or rectangular row is processed in stomata layer trapezoidal groove
Multiple stomatas of cloth.
Gas concentration detection method based on the infrared gas sensor, infrared light are sent out by infrared light supply, from integrated
The incidence hole of gas chamber enters plenum interior, is acted on the under test gas for entering plenum interior from stomata, after penetrated by light hole
Go out and received by infrared detector after optical filter, realizes the various concentration detection of specific gas.
The beneficial effects of the present invention are：
(1) present invention in, infrared light is sent out by infrared light supply, enters plenum interior from the incidence hole of integrated gas chamber, with from
The under test gas that stomata enters plenum interior is acted on, after by light hole project and connect by infrared detector after optical filter
It receives, realizes the various concentration detection of specific gas.
(2) in the present invention, infrared light enters the box-like with reflective inner wall groove and integrates gas chamber, is integrated in gas chamber in box-like
It is received again by infrared detector after multiple reflections can occur, the integrated gas chamber of this box-like with reflective inner wall groove can guarantee red
Outer light has longer light path, improves the detectivity of infrared gas sensor.In addition, box-like integrates the stomata layer silicon of gas chamber
The efficiency that gas diffusion can be improved in multiple stomatas is opened up on base wafer inner groovy, shortens the response time of sensor；Meanwhile groove
Area is larger, and opening up stomata thereon can't cause infrared light largely to leak, it is ensured that the efficiency of transmission of infrared light improves infrared
The detectivity of gas sensor.The present invention compared with the infrared gas sensor of S types or snakelike air chamber structure, infrared light
Efficiency of transmission higher, detectivity higher.
Description of the drawings
In order to keep the purpose of the present invention, technical solution and advantageous effect clearer, the present invention provides following attached drawing and carries out
Explanation：
Fig. 1 is the structural schematic diagram for the fully integrated infrared gas sensor that the prior art provides；
Fig. 2 is the structural schematic diagram of the fully integrated infrared gas sensor provided by the invention based on box-like air chamber structure；
Fig. 3 is the structure chart of unthreaded hole layer silicon-based wafer in box-like gas chamber provided by the invention；
Fig. 4 is the structure chart of stomata layer silicon-based wafer in box-like gas chamber provided by the invention；
Fig. 5 is the structure chart with reflective cone stomata layer silicon-based wafer in box-like gas chamber provided by the invention.
Reference numeral：1- stomata layer silicon chips, the miniature groove layer silicon chips of 2-, 3- optical filters, 4- infrared-sensitive members, 5- integrated circuits
Silicon chip, 6- infrared light supplies, 7- stomata layer silicon-based wafers, 71- stomatas, 72- stomata layer trapezoidal grooves, 73- stomata layers assem-bly face,
74- incidence hole reflective cones, 75- light hole reflective cones, 8- unthreaded hole layer silicon-based wafers, 81- incidence holes, 82- light holes, 83- unthreaded holes
Layer trapezoidal groove, 84- unthreaded hole layers assem-bly face, 9- integrated circuit modules, 91- infrared light supplies, 92- optical filters, 93- infrared-sensitives
Member.
Specific implementation mode
Below in conjunction with attached drawing, the preferred embodiment of the present invention is described in detail.
Fig. 1 be the prior art provide fully integrated infrared gas sensor structural schematic diagram, including stomata layer silicon chip 1,
Miniature groove layer silicon chip 2, optical filter 3, infrared-sensitive member 4, integrated circuit silicon chip 5 and infrared light supply 6；Box-like is based in the present embodiment
The structure of the fully integrated infrared gas sensor of air chamber structure is as shown in Fig. 2, by integrated gas chamber and circuit layer by being bonded, being bonded
Etc. modes assembling is laminated.
Wherein, integrated gas chamber is made of stomata layer silicon-based wafer 7 and unthreaded hole layer silicon-based wafer 8.Unthreaded hole layer silicon-based wafer 8
Structure is as shown in figure 3, its preparation process is the anisotropic corrosion technique using silicon, first in the monocrystalline silicon lining being specifically orientated
Photoetching is carried out on bottom, utilizes anisotropic corrosion technique processing light hole layer trapezoidal groove 83；Secondly, by dry etching or wet
The method of method corrosion, the incidence hole 81 and light extraction of suitable size are processed in the diagonal positions in unthreaded hole layer trapezoidal groove 83
Hole 82,81 area of incidence hole are not less than selected 91 efficient lighting area of infrared light supply, and 82 area of light hole is not less than infrared
The useful detection area of sensitive member 93；Finally, trapezoidal recessed in unthreaded hole layer to improve infrared light in the integrated indoor reflection efficiency of gas
The preferable reflective films of reflecting properties such as gold, silver, copper, mercury, alloy, platinum are plated on slot 83.
7 structure of stomata layer silicon-based wafer is first as shown in figure 4, its preparation process is the anisotropic corrosion technique using silicon
Photoetching is first carried out in the monocrystalline substrate being specifically orientated, and is processed using anisotropic corrosion technique trapezoidal recessed with unthreaded hole layer
The stomata layer trapezoidal groove 72 of 83 same shape of slot；Secondly, trapezoidal in stomata layer by the method for dry etching or wet etching
" groined type " is processed in groove 72, any number of stomata 71 that " quincunx ", " ellipse " or position are put at random, protecting
Barrier under test gas also need to while can quickly exchange into integrated gas chamber from external environment to avoid as far as possible infrared light supply 91 from
The loss of stomata 71；Finally, be improve infrared light in the integrated indoor reflection efficiency of gas, equally on stomata layer trapezoidal groove 72
Plate the preferable reflective films of reflecting properties such as gold, silver, copper, mercury, alloy, platinum.
Assembling can be laminated by the modes such as being bonded, being bonded in stomata layer silicon-based wafer 7 and unthreaded hole layer silicon-based wafer 8.According to
Be bonded assembling mode, need respectively stomata layer assem-bly face 73 and unthreaded hole layer assem-bly face gold-plated equal metal materials on 84, then carry out height
Temperature pressurization bonding.
The circuit layer of integrated circuit modules 9 by SOC forms or SIP forms integrate infrared light supply 91, light source driving circuit,
Central processing unit, digital signal processing module, infrared-sensitive member 93, signal amplification module and power management module.Wherein, power supply
Management module is the Energy Management System of entire fully integrated infrared gas sensor.Central processing unit and digital signal processing module
The common signal control function for coordinating entire fully integrated infrared gas sensor.Light source driving circuit is receiving central processing unit
After control instruction, driving infrared light supply 91 sends out infrared light；Infrared light is first filtered by optical filter 92 before entering infrared-sensitive member 93
Unless the infrared light of tested gas infrared signature absorption bands, the infrared light of only tested gas infrared signature absorption bands enters
Infrared-sensitive member 93.After infrared-sensitive member 93 receives infrared signal, by signal amplification, signal processing, finally
Obtain the concentration value of under test gas.
In addition, this patent is to further increase infrared light in the integrated indoor reflection efficiency of gas, in stomata layer silicon-based wafer 7
The middle reflective wimble structure of design, as shown in Figure 5.Its preparation process is the anisotropic corrosion technique using silicon, first specific
Photoetching is carried out in the monocrystalline substrate of orientation, in photoetching process graphical treatment, in 82 corresponding position of incidence hole 81 and light hole
On reserve circular pattern, and process the stomata with 83 same shape of unthreaded hole layer trapezoidal groove using anisotropic corrosion technique
Layer trapezoidal groove 72, conical incidence hole reflective cone 74 and conical light hole reflective cone 75, stomata layer silicon-based wafer 7 enters light
The geometric center of hole reflective cone 74 is located at right over the incidence hole 81 of unthreaded hole layer silicon-based wafer 8, the light extraction of stomata layer silicon-based wafer 7
The geometric center of hole reflective cone 75 is located at right over the light hole 82 of unthreaded hole layer silicon-based wafer 8, the conical surface and the stomata ladder of reflective cone
Angle between connected in star should be between 30 °~60 °；Secondly, by the method for dry etching or wet etching, in stomata layer
" groined type " is processed in trapezoidal groove 72, any number of stomata 71 that " quincunx ", " ellipse " or position are put at random,
It also needs to avoid infrared light supply as far as possible while ensureing that under test gas can be exchanged quickly from external environment into integrated gas chamber
91 from the loss of stomata 71；Finally, to improve infrared light in the integrated indoor reflection efficiency of gas, stomata layer trapezoidal groove 72,
The reflecting properties such as plating gold, silver, copper, mercury, alloy, platinum are preferable on incidence hole reflective cone 74 and conical light hole reflective cone 75
Reflective film.
Groove shapes include symmetric shape：Square, rectangle, prismatic, asymmetrical shape：It sector and various does not advise
Then shape.Stomata and unthreaded hole can be include square, rectangle or circular arbitrary shape.
Finally illustrate, preferred embodiment above is merely illustrative of the technical solution of the present invention and unrestricted, although logical
It crosses above preferred embodiment the present invention is described in detail, however, those skilled in the art should understand that, can be
Various changes are made to it in form and in details, without departing from claims of the present invention limited range.
Claims (7)
1. a kind of complete or collected works' accepted way of doing sth infrared gas sensor based on box-like air chamber structure, it is characterised in that：Gas is integrated including box-like
Room and integrated circuit modules；The box-like integrates gas chamber and integrated circuit modules and passes through bonding or bonding way stacking assembling；
Wherein, it includes stomata layer silicon-based wafer and unthreaded hole layer silicon-based wafer that box-like, which integrates gas chamber,；Stomata layer silicon-based wafer and unthreaded hole
Layer silicon-based wafer combines by bonding or bonding way and to form gas chamber；
Etching is fluted in unthreaded hole layer silicon-based wafer, and offers the incidence hole and light hole being connected to interior grooves, incidence hole
The diagonal position of groove is in light hole, groove surfaces are coated with the reflective film more than 0.5 to infrared light reflection coefficient；
Etching is fluted in stomata layer silicon-based wafer, and offers the stomata being connected to interior grooves；Recess region have it is multiple with
The stomata of groove connection, groove surfaces are coated with the reflective film more than 0.5 to infrared light reflection coefficient；
The groove of stomata layer silicon-based wafer is identical as the length and width size of groove of stomata layer silicon-based wafer；
Integrated circuit modules are integrated at infrared light supply, optical filter, infrared detector and signal by SoC forms or SiP forms
Manage circuit silicon chip or ceramic substrate, infrared light supply, infrared detector be respectively aligned to unthreaded hole layer silicon-based wafer incidence hole and
Light hole.
2. a kind of complete or collected works' accepted way of doing sth infrared gas sensor based on box-like air chamber structure according to claim 1, feature
It is：The groove is processed by the lithographic method of dry etching or wet etching.
3. a kind of complete or collected works' accepted way of doing sth infrared gas sensor based on box-like air chamber structure according to claim 1, feature
It is：The stomata is in groined type or quincunx arrangement.
4. a kind of complete or collected works' accepted way of doing sth infrared gas sensor based on box-like air chamber structure according to claim 1, feature
It is：The stomata layer silicon-based wafer is equipped with reflective wimble structure, including conical incidence hole reflective cone and conical light hole it is anti-
Light cone, the angle between the conical surface and stomata trapezoidal groove of reflective cone should be between 30 °~60 °；The incidence hole reflective cone
It is coated with the reflective film to infrared light reflection coefficient more than 0.5 with conical light hole reflective cone.
5. a kind of complete or collected works' accepted way of doing sth infrared gas sensor based on box-like air chamber structure according to claim 4, feature
It is：The geometric center of the incidence hole reflective cone is located at right over unthreaded hole layer silicon-based wafer incidence hole, stomata layer silicon-based wafer
The geometric center of light hole reflective cone is located at right over unthreaded hole layer silicon-based wafer light hole.
6. a kind of complete or collected works' accepted way of doing sth infrared gas sensor based on box-like air chamber structure according to claim 4 or 5, special
Sign is：The preparation process of the reflective wimble structure is the anisotropic corrosion technique using silicon, is specifically being orientated first
It carries out photoetching in monocrystalline substrate, in photoetching process graphical treatment, circle is reserved on incidence hole and light hole corresponding position
Shape pattern, and process conical incidence hole reflective cone and conical light hole reflective cone using anisotropic corrosion technique；Its
It is secondary, by the method for dry etching or wet etching, the more of quincunx or rectangular arrangement are processed in stomata layer trapezoidal groove
A stomata.
7. the gas concentration detection method based on any one of the claim 1-5 infrared gas sensors, it is characterised in that：
Infrared light is sent out by infrared light supply, enters plenum interior from the incidence hole of integrated gas chamber, enters waiting for for plenum interior with from stomata
Survey gas acted on, after by light hole project and received by infrared detector after optical filter, realize specific gas not
Same Concentration Testing.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109596560A (en) * | 2018-12-19 | 2019-04-09 | 电子科技大学 | A kind of integrated infrared gas sensor of multichannel |
| CN109702669A (en) * | 2019-02-18 | 2019-05-03 | 中国电子科技集团公司第二十六研究所 | A kind of sensor test fixture |
| CN113008823A (en) * | 2019-12-20 | 2021-06-22 | 有研工程技术研究院有限公司 | Full-integrated infrared gas sensor |
| CN113484267A (en) * | 2021-06-11 | 2021-10-08 | 汉威科技集团股份有限公司 | Infrared gas sensor based on silicon-based multiple reflection cavity |
| CN113495059A (en) * | 2020-04-04 | 2021-10-12 | 江苏物联网研究发展中心 | Infrared gas sensor and preparation method thereof |
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| CN101319989A (en) * | 2007-06-08 | 2008-12-10 | 派克森公司 | Gas concentration detection method and apparatus thereof |
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| CN109702669B (en) * | 2019-02-18 | 2024-03-01 | 中国电子科技集团公司第二十六研究所 | Sensor test fixture |
| CN113008823A (en) * | 2019-12-20 | 2021-06-22 | 有研工程技术研究院有限公司 | Full-integrated infrared gas sensor |
| CN113008823B (en) * | 2019-12-20 | 2023-02-21 | 有研工程技术研究院有限公司 | Full-integrated infrared gas sensor |
| CN113495059A (en) * | 2020-04-04 | 2021-10-12 | 江苏物联网研究发展中心 | Infrared gas sensor and preparation method thereof |
| CN113484267A (en) * | 2021-06-11 | 2021-10-08 | 汉威科技集团股份有限公司 | Infrared gas sensor based on silicon-based multiple reflection cavity |
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