CN108318439A - A kind of complete or collected works' accepted way of doing sth infrared gas sensor based on oval air chamber structure - Google Patents
A kind of complete or collected works' accepted way of doing sth infrared gas sensor based on oval air chamber structure Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 67
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 65
- 239000010703 silicon Substances 0.000 claims abstract description 65
- 230000003287 optical effect Effects 0.000 claims abstract description 11
- 238000012360 testing method Methods 0.000 claims abstract description 8
- 238000001514 detection method Methods 0.000 claims abstract description 7
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- 238000005260 corrosion Methods 0.000 claims description 11
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- 239000000758 substrate Substances 0.000 claims description 10
- 238000001259 photo etching Methods 0.000 claims description 8
- 238000001039 wet etching Methods 0.000 claims description 8
- 238000001312 dry etching Methods 0.000 claims description 7
- 238000002360 preparation method Methods 0.000 claims description 5
- 239000000919 ceramic Substances 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 38
- 238000012545 processing Methods 0.000 description 11
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000000712 assembly Effects 0.000 description 3
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- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 3
- 229910052753 mercury Inorganic materials 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- 230000005518 electrochemistry Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
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- 230000010354 integration Effects 0.000 description 1
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- 239000007769 metal material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3504—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing gases, e.g. multi-gas analysis
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
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Abstract
The present invention relates to a kind of complete or collected works' accepted way of doing sth infrared gas sensor based on oval air chamber structure, belongs to gas sensor domain.Including the integrated gas chamber of ellipse and integrated circuit modules；The ellipse integrates gas chamber and integrated circuit modules pass through bonding or bonding way stacking assembling；Wherein, the integrated gas chamber of ellipse includes stomata layer silicon-based wafer and unthreaded hole layer silicon-based wafer；Stomata layer silicon-based wafer and unthreaded hole layer silicon-based wafer combine to form gas chamber by the modes such as being bonded or being bonded；Infrared light is sent out by infrared light supply, enter plenum interior from the incidence hole of integrated gas chamber, acted on the under test gas for entering plenum interior from stomata, after by light hole project and received by infrared detector after optical filter, realize specific gas various concentration detection.The present invention is compared with the infrared gas sensor of S types or snakelike air chamber structure, the efficiency of transmission higher of infrared light, detectivity higher.
Description
Technical field
The invention belongs to gas sensor domains, are related to a kind of complete or collected works' accepted way of doing sth infrared-gas based on oval air chamber structure
Sensor.
Background technology
Gas sensor largely uses in fields such as production scene monitoring, gas ductwork monitoring, environmental monitorings, with Internet of Things
To the growing interest of quality of air environment, the application demand of gas sensor is at full speed by the rapid developments of new industries such as net, people
Increase.Gas sensor includes mainly that types, these sensors such as semi-conductor type, catalytic combustion-type and electrochemistry type are in use
Greatest problem be poor selectivity to gas, there are cross jamming infrared gas sensors based on gas point between gas with various
Son works for the selective absorbing principle of specific wavelength infrared light.With semi-conductor type, catalytic combustion-type and electrochemistry type gas
Sensor is compared, and infrared gas sensor has high selectivity, can be realized and be realized " fingerprint characteristic formula " identification to gas.
Infrared gas sensor develops since last century the '30s, and gas chamber is infrared gas sensor mid-infrared light line
The channel that transmission, infrared light and under test gas interact, is the necessary component of infrared gas sensor, gas chamber is set
Meter has directly influence for sensitivity, response time of infrared gas sensor etc..The gas chamber master of infrared gas sensor
To include direct-injection type and reflective, be to ensure that the miniaturization of sensor and infrared energy repeatedly pass through tested gas, optics gas
The light path of room is usually designed to reflective, such relative increase distance of light path, to improving the accuracy of detection of sensor.
But in view of each reflection light energy can all have certain decaying, the order of reflection that light selection is reflected in gas chamber can not mistake
It is more.Therefore how to ensure that the decaying of light ray energy can be reduced while long light path, to increase infrared gas sensor
Sensitivity and precision be the key that research.
Currently, it is one end of representative mainly to have publication number CN102279167A for the research of the gas chamber of infrared gas sensor
Reflection type mirror gas chamber, elliptical reflecting structure gas chamber, the publication number CN101825566A that publication number CN101004380A is representative
For the ring type structure gas chamber etc. of representative.Using above-mentioned air chamber structure, lead to the infrared gas sensor prepared there are integrated levels it is low,
The problems such as volume is big.Therefore, to improve the integrated level of infrared gas sensor, fully integrated infrared gas sensor is developed, need to be opened
Open up the research of small size, integrated air chamber structure.Publication number CN103245634A provides one kind by under substrate, pit on pit
Substrate is bonded the integrated air chamber structure that false piece forms, and the single-chip integration formula infrared-gas sensing of air chamber structure is integrated based on this
Device, but infrared light supply and infrared detector are placed in inside gas chamber absorbing cavity in the sensor, cause gas to be made with infrared light
Effective light path is shorter, and sensor detectivity is relatively low.The offers such as publication number CN104677851A, CN105181621A
Fully integrated infrared gas sensor uses S types or snakelike air chamber structure, air admission hole need to be opened up in narrow gas channels, from air inlet
Kong Zhonghui causes a large amount of infrared lights to be lost, cause infrared light by less efficient, influence the spirit of infrared gas sensor
Sensitivity.
Invention content
In view of this, the purpose of the present invention is to provide a kind of complete or collected works' accepted way of doing sth infrared-gas based on oval air chamber structure
Sensor, specific structure include：The integrated gas chamber of ellipse and integrated circuit modules.The integrated gas chamber of ellipse and integrated circuit
Assembling is laminated by the modes such as being bonded, being bonded in module.Wherein, the integrated gas chamber of ellipse includes stomata layer silicon-based wafer and unthreaded hole layer
Silicon-based wafer, two panels silicon-based wafer combine to form gas chamber by the modes such as being bonded, being bonded.It is etched in unthreaded hole layer silicon-based wafer ellipse
Circular groove, and offer the incidence hole and light hole being connected to inner elliptical connected in star.Etching in stomata layer silicon-based wafer
There is oval-shaped groove, and offers the stomata being connected to inner elliptical connected in star.Integrated circuit modules be by SoC forms or
SiP forms are integrated with the silicon chip or ceramic substrate of infrared light supply, optical filter, infrared detector and signal processing circuit, infrared
Light source, infrared detector are respectively aligned to the incidence hole and light hole of unthreaded hole layer.
In order to achieve the above objectives, the present invention provides the following technical solutions：
A kind of complete or collected works' accepted way of doing sth infrared gas sensor based on oval air chamber structure, including the integrated gas chamber sum aggregate of ellipse
At circuit module；The ellipse integrates gas chamber and integrated circuit modules pass through bonding or bonding way stacking assembling；
Wherein, the integrated gas chamber of ellipse includes stomata layer silicon-based wafer and unthreaded hole layer silicon-based wafer；Stomata layer silicon-based wafer
It combines by bonding or bonding way with unthreaded hole layer silicon-based wafer and to form gas chamber；
It is etched with oval-shaped groove in unthreaded hole layer silicon-based wafer, and offers the incidence hole being connected to inner elliptical connected in star
And light hole, incidence hole and light hole are in two focal positions of oval-shaped groove, oval-shaped groove surface is coated with to infrared
Luminous reflectivity is more than 0.5 reflective film；
It is etched with oval-shaped groove in stomata layer silicon-based wafer, and offers the stomata being connected to inner elliptical connected in star；
There are multiple stomatas being connected to groove in oval-shaped groove region, and oval-shaped groove surface, which is coated with, is more than infrared light reflection coefficient
0.5 reflective film；
The length and width size phase of the oval-shaped groove of stomata layer silicon-based wafer and the oval-shaped groove of stomata layer silicon-based wafer
Together；
Integrated circuit modules are to integrate infrared light supply, optical filter, infrared detector and letter by SoC forms or SiP forms
The silicon chip or ceramic substrate of number processing circuit, infrared light supply, infrared detector are respectively aligned to the incidence hole and light extraction of unthreaded hole layer
Hole.
Further, the oval-shaped groove is processed by the lithographic method of dry etching or wet etching.
Further, the stomata is in groined type is quincunx or oval arrangement.
Further, the stomata layer silicon-based wafer is equipped with reflective wimble structure, including conical incidence hole reflective cone and circular cone
Shape light hole reflective cone, the angle between the conical surface and stomata trapezoidal groove of reflective cone should be between 30 °~60 °；It is described enter
Unthreaded hole reflective cone and conical light hole reflective cone are coated with the reflective film to infrared light reflection coefficient more than 0.5.
Further, the geometric center of the incidence hole reflective cone is located at right over unthreaded hole layer silicon-based wafer incidence hole, stomata
The geometric center of layer silicon-based wafer light hole reflective cone is located at right over unthreaded hole layer silicon-based wafer light hole.
Further, the preparation process of the reflective wimble structure is the anisotropic corrosion technique using silicon, first specific
Orientation monocrystalline substrate on carry out photoetching, in photoetching process graphical treatment, on incidence hole and light hole corresponding position
It reserves circular pattern, and processes conical incidence hole reflective cone using anisotropic corrosion technique and conical light hole is anti-
Light cone；Secondly, it by the method for dry etching or wet etching, is processed in stomata layer trapezoidal groove quincunx or oval
Multiple stomatas of arrangement.
Gas concentration detection method based on the infrared gas sensor, infrared light are sent out by infrared light supply, from integrated
The incidence hole of gas chamber enters plenum interior, is acted on the under test gas for entering plenum interior from stomata, after penetrated by light hole
Go out and received by infrared detector after optical filter, realizes the various concentration detection of specific gas.
The beneficial effects of the present invention are：
(1) present invention in, infrared light is sent out by infrared light supply, enters plenum interior from the incidence hole of integrated gas chamber, with from
The under test gas that stomata enters plenum interior is acted on, after by light hole project and connect by infrared detector after optical filter
It receives, realizes the various concentration detection of specific gas.
(2) in the present invention, propose that the ellipse with reflective inner wall groove integrates gas chamber.Infrared light, which enters, to be had in reflective
The ellipse of wall groove integrates gas chamber, is received again by infrared detector after multiple reflections can occur in the integrated gas chamber of ellipse.
The incidence hole and light hole of the integrated gas chamber of ellipse are located at elliptical two focal points, according to the property of oval tangent line, by entering
Unthreaded hole enters elliptical light and can be projected from light hole after the reflection of oval side wall, and for light after incidence hole is come in, a plurality of light can
It can pass through the different modes such as primary (minute surface) reflection, multiple (minute surface) reflection and diffusing reflection and reach light hole.The present invention's sets
Meter can guarantee that more incident infrared lights are projected from light hole, improve the detectivity of infrared gas sensor；Ellipse collection
The efficiency that gas diffusion can be improved at multiple stomatas are opened up on oval-shaped groove in the stomata layer silicon-based wafer of gas chamber shortens sensing
The response time of device；Oval-shaped groove area is larger, and opening up stomata thereon can't cause infrared light largely to leak, it is ensured that red
The efficiency of transmission of outer light improves the detectivity of infrared gas sensor.The present invention and S types or snakelike air chamber structure it is infrared
Gas sensor is compared, the efficiency of transmission higher of infrared light, detectivity higher.
Description of the drawings
In order to keep the purpose of the present invention, technical solution and advantageous effect clearer, the present invention provides following attached drawing and carries out
Explanation：
Fig. 1 is the structural schematic diagram for the fully integrated infrared gas sensor that the prior art provides；
Fig. 2 is the structural representation of the fully integrated infrared gas sensor provided by the invention based on oval air chamber structure
Figure；
Fig. 3 is the structure chart of unthreaded hole layer silicon-based wafer in oval gas chamber provided by the invention；
Fig. 4 is the schematic cross-section in unthreaded hole layer silicon-based wafer major semiaxis direction in oval gas chamber provided by the invention；
Fig. 5 is the schematic cross-section in unthreaded hole layer silicon-based wafer semi-minor axis direction in oval gas chamber provided by the invention；
Fig. 6 is that unthreaded hole layer silicon-based wafer light reflects schematic diagram in oval gas chamber provided by the invention；
Fig. 7 is the structure chart of stomata layer silicon-based wafer in oval gas chamber provided by the invention；
Fig. 8 is the structure chart with reflective cone stomata layer silicon-based wafer in oval gas chamber provided by the invention.
Reference numeral：1- stomata layer silicon chips, the miniature groove layer silicon chips of 2-, 3- optical filters, 4- infrared-sensitive members, 5- integrated circuits
Silicon chip, 6- infrared light supplies, 7- stomata layer silicon-based wafers, 71- stomatas, 72- stomata layer elliptic conic shape grooves, the assembling of 73- stomata layers
Face, 74- incidence hole reflective cones, 75- light hole reflective cones, 8- unthreaded hole layer silicon-based wafers, 81- incidence holes, 82- light holes, 83- are ellipse
Circular groove, 84- unthreaded hole layers assem-bly face, 9- integrated circuit modules, 91- infrared light supplies, 92- optical filters, 93- infrared-sensitive members,
Specific implementation mode
Below in conjunction with attached drawing, the preferred embodiment of the present invention is described in detail.
Fig. 1 be the prior art provide fully integrated infrared gas sensor structural schematic diagram, including stomata layer silicon chip 1,
Miniature groove layer silicon chip 2, optical filter 3, infrared-sensitive member 4, integrated circuit silicon chip 5 and infrared light supply 6；Based on ellipse in the present embodiment
The structure of the fully integrated infrared gas sensor of shape air chamber structure is as shown in Fig. 2, by integrated gas chamber and circuit layer by being bonded, gluing
It the modes such as connects and assembling is laminated.
Wherein, integrated gas chamber is made of stomata layer silicon-based wafer 7 and unthreaded hole layer silicon-based wafer 8.Unthreaded hole layer silicon-based wafer 8
Structure is as shown in figure 3, its preparation process is the anisotropic corrosion technique using silicon, first in the monocrystalline silicon lining being specifically orientated
Photoetching is carried out on bottom, processes that major semiaxis is a, semi-minor axis is b (a using anisotropic corrosion technique>B) oval-shaped groove 83,
The height d of groove is less than wafer thickness e；Secondly, recessed in unthreaded hole layer elliptic conic shape by the method for dry etching or wet etching
The geometric center of processing incidence hole 81 and light hole 82 on major semiaxis in slot, incidence hole 81 and light hole 82 is respectively placed in ellipse
On two focuses P1 and P2 of conical socket.It will appear according to wet etching method processing, due to the factor of corrosion angle (α)
It influences, major semiaxis can be caused to shorten to a'=a-cot α × d (as shown in Figure 4), semi-minor axis shorten to b'=b-cot α × d (such as
Shown in Fig. 5), therefore, the distances of two focuses will be byBecomeTo avoid focus from shortening
The width of the problem of causing infrared light that can not be projected from light hole 82, light hole 82 need to be more than c'-c, and 82 area of light hole is not
Less than the useful detection area of infrared-sensitive member 93.81 area of incidence hole is not less than selected 91 effective light-emitting surface of infrared light supply
Product, for ease of processing, incidence hole 81 and light hole 82 are designed as identical size.Finally, it is being integrated in gas chamber to improve infrared light
Reflection efficiency, gold, silver, copper, mercury, alloy, the preferable reflective film of reflecting properties such as platinum are plated on unthreaded hole layer trapezoidal groove.
According to elliptical property, do not considering irreflexive in the present invention, the light path calculated value of infrared light is in
In the range of [2a', 2a], as shown in Figure 6.Light after incidence hole is come in, a plurality of light may pass through primary (minute surface) reflect,
Repeatedly the different modes such as (minute surface) reflection and diffusing reflection reach light hole.If there is diffusing reflection and multiple mirror-reflection, infrared light
Practical light path will be far longer than the range of [2a', 2a].
7 structure of stomata layer silicon-based wafer is first as shown in fig. 7, its preparation process is the anisotropic corrosion technique using silicon
Photoetching is first carried out in the monocrystalline substrate being specifically orientated, and is processed and unthreaded hole layer elliptic cone using anisotropic corrosion technique
The stomata layer elliptic conic shape groove 72 of connected in star same shape；Secondly, by the method for dry etching or wet etching, in stomata
" groined type " is processed in layer cone-shaped groove, any number of stomata that " quincunx ", " ellipse " or position are put at random
71, it also needs to avoid infrared light as far as possible while ensureing that under test gas can be exchanged quickly from external environment into integrated gas chamber
Loss of the source 91 from stomata 71；Finally, it is to improve infrared light in the integrated indoor reflection efficiency of gas, it is equally conical in stomata layer
The preferable reflective films of reflecting properties such as gold, silver, copper, mercury, alloy, platinum are plated on groove.
Assembling can be laminated by the modes such as being bonded, being bonded in stomata layer silicon-based wafer 7 and unthreaded hole layer silicon-based wafer 8.According to
Be bonded assembling mode, need respectively stomata layer assem-bly face 73 and unthreaded hole layer assem-bly face gold-plated equal metal materials on 84, then carry out height
Temperature pressurization bonding.
The circuit layer of integrated circuit modules 9 by SOC forms or SIP forms integrate infrared light supply 91, light source driving circuit,
Central processing unit, digital signal processing module, infrared-sensitive member 93, signal amplification module and power management module.Wherein, power supply
Management module is the Energy Management System of entire fully integrated infrared gas sensor.Central processing unit and digital signal processing module
The common signal control function for coordinating entire fully integrated infrared gas sensor.Light source driving circuit is receiving central processing unit
After control instruction, driving infrared light supply 91 sends out infrared light；Infrared light is first filtered by optical filter 92 before entering infrared-sensitive member 93
Unless the infrared light of tested gas infrared signature absorption bands, the infrared light of only tested gas infrared signature absorption bands enters
Infrared-sensitive member 93.After infrared-sensitive member 93 receives infrared signal, by signal amplification, signal processing, finally
Obtain the concentration value of under test gas.
In addition, this patent is to further increase infrared light in the integrated indoor reflection efficiency of gas, in stomata layer silicon-based wafer 7
The middle reflective wimble structure of design, as shown in Figure 8.Its preparation process is the anisotropic corrosion technique using silicon, first specific
Photoetching is carried out in the monocrystalline substrate of orientation, in photoetching process graphical treatment, in 82 corresponding position of incidence hole 81 and light hole
On reserve circular pattern, and process the gas with unthreaded hole layer elliptic conic shape groove same shape using anisotropic corrosion technique
Aperture layer trapezoidal groove, conical incidence hole reflective cone 74 and conical light hole reflective cone 75, stomata layer silicon-based wafer 7 enters light
The geometric center of hole reflective cone 74 is located at right over the incidence hole 81 of unthreaded hole layer silicon-based wafer 8, the light extraction of stomata layer silicon-based wafer 7
The geometric center of hole reflective cone 75 is located at right over the light hole 82 of unthreaded hole layer silicon-based wafer 8, the conical surface and the stomata ladder of reflective cone
Angle between connected in star should be between 30 °~60 °；Secondly, by the method for dry etching or wet etching, in stomata layer
" groined type " is processed in trapezoidal groove, any number of stomata 71 that " quincunx ", " ellipse " or position are put at random,
It ensures and also needs to avoid infrared light supply 91 as far as possible while under test gas can be exchanged quickly from external environment into integrated gas chamber
From the loss of stomata 71；Finally, to improve infrared light in the integrated indoor reflection efficiency of gas, in stomata layer trapezoidal groove, enter light
The reflecting properties such as plating gold, silver, copper, mercury, alloy, platinum preferably reflect on hole reflective cone 74 and conical light hole reflective cone 75
Film.
Stomata and unthreaded hole can be include square, rectangle or circular arbitrary shape.
Finally illustrate, preferred embodiment above is merely illustrative of the technical solution of the present invention and unrestricted, although logical
It crosses above preferred embodiment the present invention is described in detail, however, those skilled in the art should understand that, can be
Various changes are made to it in form and in details, without departing from claims of the present invention limited range.
Claims (7)
1. a kind of complete or collected works' accepted way of doing sth infrared gas sensor based on oval air chamber structure, it is characterised in that：Collect including ellipse
At gas chamber and integrated circuit modules；The ellipse integrates gas chamber and integrated circuit modules pass through bonding or bonding way stacking group
Dress；
Wherein, the integrated gas chamber of ellipse includes stomata layer silicon-based wafer and unthreaded hole layer silicon-based wafer；Stomata layer silicon-based wafer and light
Aperture layer silicon-based wafer combines by bonding or bonding way and to form gas chamber；
It is etched with oval-shaped groove in unthreaded hole layer silicon-based wafer, and offers the incidence hole being connected to inner elliptical connected in star and goes out
Unthreaded hole, incidence hole and light hole are in two focal positions of oval-shaped groove, and oval-shaped groove surface is coated with anti-to infrared light
Penetrate the reflective film that coefficient is more than 0.5；
It is etched with oval-shaped groove in stomata layer silicon-based wafer, and offers the stomata being connected to inner elliptical connected in star；It is oval
There are multiple stomatas being connected to groove in connected in star region, and oval-shaped groove surface is coated with is more than 0.5 to infrared light reflection coefficient
Reflective film；
The oval-shaped groove of stomata layer silicon-based wafer is identical as the length and width size of oval-shaped groove of stomata layer silicon-based wafer；
Integrated circuit modules are integrated at infrared light supply, optical filter, infrared detector and signal by SoC forms or SiP forms
The silicon chip or ceramic substrate of circuit are managed, infrared light supply, infrared detector are respectively aligned to the incidence hole and light hole of unthreaded hole layer.
2. a kind of complete or collected works' accepted way of doing sth infrared gas sensor based on oval air chamber structure according to claim 1, special
Sign is：The oval-shaped groove is processed by the lithographic method of dry etching or wet etching.
3. a kind of complete or collected works' accepted way of doing sth infrared gas sensor based on oval air chamber structure according to claim 1, special
Sign is：The stomata is in groined type is quincunx or oval arrangement.
4. a kind of complete or collected works' accepted way of doing sth infrared gas sensor based on oval air chamber structure according to claim 1, special
Sign is：The stomata layer silicon-based wafer is equipped with reflective wimble structure, including conical incidence hole reflective cone and conical light hole
Reflective cone, the angle between the conical surface and stomata trapezoidal groove of reflective cone should be between 30 °~60 °；The incidence hole is reflective
Cone and conical light hole reflective cone are coated with the reflective film to infrared light reflection coefficient more than 0.5.
5. a kind of complete or collected works' accepted way of doing sth infrared gas sensor based on oval air chamber structure according to claim 4, special
Sign is：The geometric center of the incidence hole reflective cone is located at right over unthreaded hole layer silicon-based wafer incidence hole, and stomata layer silicon substrate is brilliant
The geometric center of circle light hole reflective cone is located at right over unthreaded hole layer silicon-based wafer light hole.
6. a kind of complete or collected works' accepted way of doing sth infrared gas sensor based on oval air chamber structure according to claim 4 or 5,
It is characterized in that：The preparation process of the reflective wimble structure is the anisotropic corrosion technique using silicon, is specifically being orientated first
Monocrystalline substrate on carry out photoetching, in photoetching process graphical treatment, reserved on incidence hole and light hole corresponding position
Circular pattern, and process conical incidence hole reflective cone and conical light hole reflective cone using anisotropic corrosion technique；
Secondly, by the method for dry etching or wet etching, quincunx or oval arrangement is processed in stomata layer trapezoidal groove
Multiple stomatas.
7. the gas concentration detection method based on any one of the claim 1-5 infrared gas sensors, it is characterised in that：
Infrared light is sent out by infrared light supply, enters plenum interior from the incidence hole of integrated gas chamber, enters waiting for for plenum interior with from stomata
Survey gas acted on, after by light hole project and received by infrared detector after optical filter, realize specific gas not
Same Concentration Testing.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810220064.0A CN108318439B (en) | 2018-03-16 | 2018-03-16 | Full-integrated infrared gas sensor based on oval air chamber structure |
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| CN201810220064.0A CN108318439B (en) | 2018-03-16 | 2018-03-16 | Full-integrated infrared gas sensor based on oval air chamber structure |
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| CN108318439B CN108318439B (en) | 2020-12-29 |
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| CN108318439B (en) | 2020-12-29 |
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