CN216718183U - Linear variable optical filter and continuous spectrum gas sensor using same - Google Patents
Linear variable optical filter and continuous spectrum gas sensor using same Download PDFInfo
- Publication number
- CN216718183U CN216718183U CN202123427968.7U CN202123427968U CN216718183U CN 216718183 U CN216718183 U CN 216718183U CN 202123427968 U CN202123427968 U CN 202123427968U CN 216718183 U CN216718183 U CN 216718183U
- Authority
- CN
- China
- Prior art keywords
- layer
- silicon
- thickness
- silicon dioxide
- linear variable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
The utility model discloses a linear variable optical filter and a continuous spectrum gas sensor using the same, which comprise a substrate, a conical cavity, a horizontal Bragg reflection layer and an inclined Bragg reflection layer, wherein the horizontal Bragg reflection layer and the inclined Bragg reflection layer are arranged on the upper side and the lower side of the conical cavity, and one side of the substrate is connected with the inclined Bragg reflection layer. The utility model realizes linear variable optical filtering by using a single optical filter, integrates the linear variable optical filter with an infrared detector array, realizes the monitoring of mixed gas by using a single optical filter and a single NDIR gas sensor, and reduces the size of the mixed gas sensor based on the NDIR technology; due to the adoption of the linear variable optical filter, the position of the infrared detection unit can be properly selected according to the type of the gas to be detected, and the type of the gas to be monitored of the mixed gas sensor based on the NDIR technology is improved; a plurality of infrared detection unit detection results can be selected and compared through an algorithm technology, and therefore the accuracy of the mixed gas sensor based on the NDIR technology is improved.
Description
Technical Field
The utility model belongs to the technical field of gas sensors, and particularly relates to a linear variable optical filter and a continuous spectrum gas sensor using the same.
Background
The NDIR gas monitoring system mainly comprises a gas inlet, a gas outlet, an infrared gas detector signal processing circuit, an infrared light source circuit, a gas chamber, an infrared light source and an infrared gas detector. The infrared gas sensor consists of a light filter, an infrared detector, a shell and a base. The infrared ray is generated by an infrared light source, passes through the gas chamber and the optical filter and is emitted to the infrared detector. According to the beer-lambert law, the gas in the gas cell absorbs light at different wavelengths depending on the gas type, and the gas type and concentration can be determined by measuring the wavelength of attenuation. And the filters are designed to eliminate light outside of a particular wavelength (the wavelength that the selected gas molecule can absorb).
Mixed gas sensors (or modules) based on NDIR technology typically integrate different NDIR single gas sensors in the same circuit, and use multiple NDIR gas sensors to accomplish the detection of mixed gas.
The prior art has the following defects:
1) mixed gas sensors based on chemical resistance gas sensitive materials require multiple sensor integration;
2) the mixed gas sensor based on the mu GC technology has large size and complex system;
3) the mixed gas sensor based on the FTIR technology has the advantages of large volume, high cost and unsuitability for gas monitoring.
4) Mixed gas sensors based on NDIR technology currently typically require integration of multiple NDIR single-channel gas sensors, or use of NDIR multi-channel gas sensors with multiple filters, or use of single-channel and filter chopping systems, resulting in increased sensor size and cost.
SUMMERY OF THE UTILITY MODEL
In view of the above, the present invention provides a linear variable filter and a continuous spectrum gas sensor using the same.
In order to achieve the purpose, the technical scheme of the utility model is realized as follows:
the embodiment of the utility model provides a linear variable optical filter, which comprises a substrate, a conical cavity, a horizontal Bragg reflection layer and an inclined Bragg reflection layer, wherein the horizontal Bragg reflection layer and the inclined Bragg reflection layer are arranged on the upper side and the lower side of the conical cavity, and one side of the substrate is connected with the inclined Bragg reflection layer.
Preferably, the horizontal bragg reflector layer comprises a first silicon dioxide layer, a first silicon layer, a second silicon dioxide layer and a second silicon layer, and the first silicon dioxide layer, the first silicon layer, the second silicon dioxide layer and the second silicon layer are deposited on the substrate in sequence through physical vapor deposition or chemical vapor deposition.
In the utility model, preferably, the thickness of the first silicon dioxide layer is 100-1000nm, and the thickness of the first silicon layer is 100-1000 nm; the thickness of the second silicon dioxide layer is 100-1000nm, and the thickness of the second silicon layer is 100-1000 nm.
Preferably, the tapered cavity is a tapered cavity of a silicon dioxide layer, and the thickness of the thinnest part of the tapered cavity is 500-1000nm, and the thickness of the thickest part of the tapered cavity is 1500-3000 nm.
Preferably, the inclined bragg reflector layer includes a third silicon layer, a third silicon dioxide layer, a fourth silicon dioxide layer and a fifth silicon layer, and the third silicon layer, the third silicon dioxide layer, the fourth silicon dioxide layer and the fifth silicon layer are sequentially deposited on the tapered cavity through physical vapor deposition or chemical vapor deposition.
Preferably, the thickness of the third silicon layer is 100-1000 nm; the thickness of the third silicon dioxide layer is 100-1000nm, and the thickness of the fourth silicon layer is 100-1000 nm; the thickness of the fourth silicon dioxide layer is 100-1000nm, and the thickness of the fifth silicon layer is 100-1000 nm.
The second embodiment of the utility model provides a continuous spectrum gas sensor which comprises the linear variable optical filter, an infrared detector array, a sealing cap, a base and a pin, wherein the sealing cap is arranged on one side of the base, the infrared detector array is arranged on one side of the base, the pin is arranged on the other side of the base, penetrates through the base and is connected with the infrared detector array, and the linear variable optical filter is arranged on the sealing cap and is positioned right above the infrared detector array.
Compared with the prior art, the utility model realizes linear variable optical filtering by using a single optical filter, integrates the linear variable optical filter with an infrared detector array, realizes the monitoring of mixed gas by using a single optical filter and a single NDIR gas sensor, and reduces the size of the mixed gas sensor based on the NDIR technology; due to the adoption of the linear variable optical filter, the position of the infrared detection unit can be properly selected according to the type of the gas to be detected, and the type of the gas to be detected of the mixed gas sensor based on the NDIR technology is improved; a plurality of infrared detection unit detection results can be selected and compared through an algorithm technology, and therefore the accuracy of the mixed gas sensor based on the NDIR technology is improved.
Drawings
Fig. 1 is a schematic structural diagram of a linear variable filter provided in embodiment 1 of the present invention;
fig. 2 is a schematic structural diagram of a linear variable filter provided in embodiment 2 of the present invention;
fig. 3 is a schematic structural diagram of a continuous spectrum gas sensor provided in embodiment 3 of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the utility model and do not limit the utility model.
In the description of the present invention, it is to be understood that the terms "vertical", "lateral", "longitudinal", "front", "rear", "left", "right", "upper", "lower", "horizontal", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description of the present invention, and do not mean that the device or member to which the present invention is directed must have a specific orientation or position, and thus, cannot be construed as limiting the present invention.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; may be directly connected or indirectly connected through an intermediate. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
The first embodiment is as follows:
as shown in fig. 1 and 2, an embodiment of the present invention provides a linear variable optical filter, which includes a substrate 11, a tapered cavity 12, an inclined bragg reflector 13, and a horizontal bragg reflector 14, where the inclined bragg reflector 13 and the horizontal bragg reflector 14 are disposed on upper and lower sides of the tapered cavity 12, and one side of the substrate 11 is connected to the horizontal bragg reflector 14.
As shown in fig. 1 and 2, the horizontal bragg reflector 14 includes a first silicon dioxide layer 141, a first silicon layer 142, a second silicon dioxide layer 143, and a second silicon layer 144, and the first silicon dioxide layer 141, the first silicon layer 142, the second silicon dioxide layer 143, and the second silicon layer 144 are sequentially deposited on the substrate 11 by physical vapor deposition or chemical vapor deposition.
As shown in fig. 1 and 2, the thickness of the first silicon dioxide layer 141 is 100-1000nm, and the thickness of the first silicon layer 142 is 100-1000 nm; the thickness of the second silicon dioxide layer 143 is 100-1000nm, and the thickness of the second silicon layer 144 is 100-1000 nm.
As shown in fig. 1 and 2, the tapered cavity 12 is a tapered cavity of a silicon dioxide layer, and has a thinnest portion with a thickness of 500-1000nm and a thickest portion with a thickness of 1500-3000 nm.
As shown in fig. 1 and 2, the tilted bragg reflector layer 13 includes a third silicon layer 131, a third silicon dioxide layer 132, a fourth silicon layer 133, a fourth silicon dioxide layer 134, and a fifth silicon layer 135, and the third silicon layer 131, the third silicon dioxide layer 132, the fourth silicon layer 133, the fourth silicon dioxide layer 134, and the fifth silicon layer 135 are sequentially deposited on the tapered cavity 12 by physical vapor deposition or chemical vapor deposition.
As shown in fig. 1 and 2, the thickness of the third silicon layer 131 is 100-1000 nm; the thickness of the third silicon dioxide layer 132 is 100-1000nm, and the thickness of the fourth silicon layer 133 is 100-1000 nm; the thickness of the fourth silicon oxide layer 144 is 100-1000nm, and the thickness of the fifth silicon layer 145 is 100-1000 nm.
Example two:
taking a silicon substrate and a variable optical filter with the thickness of 2.5-5 microns as an example, the manufacturing method comprises the following steps:
s1: cleaning a substrate 11, and carrying out ultrasonic cleaning on the substrate by using acetone, alcohol and deionized water in sequence;
s2: depositing a first silicon dioxide layer 141, a first silicon layer 142, a second silicon dioxide layer 143 and a second silicon layer 144 on the substrate 11 in sequence by using a physical vapor deposition or chemical vapor deposition technique, wherein the thickness of the first silicon dioxide layer 141 is 560nm, and the thickness of the first silicon layer 142 is 240 nm; the thickness of the second silicon dioxide layer 143 is 560nm, and the thickness of the second silicon layer 144 is 240 nm;
s3: depositing a layer of silicon dioxide with a thickness of 1900nm on the surface of the second silicon layer 144 of step S2 by using a physical vapor deposition or chemical vapor deposition technique;
s4: spin-coating a layer of photoresist on the surface of the silicon dioxide obtained in the step S3 by using a spin coater, and soft-baking the photoresist;
s5: exposing the photoresist by using a gray-scale mask;
s6: developing the exposed substrate 11 by using a developing solution corresponding to the photoresist to obtain a tapered photoresist;
s7: etching the substrate 11 by using a dry etching method to obtain a silicon dioxide conical cavity 12, wherein the thickness of the thinnest part is 840nm, and the thickness of the thickest part is 1900 nm;
s8: depositing a third silicon layer 131, a third silicon dioxide layer 132, a fourth silicon layer 133, a fourth silicon dioxide layer 134 and a fifth silicon layer 135 in sequence over the tapered cavity using a physical vapor deposition or chemical vapor deposition technique, the third silicon layer 131 having a thickness of 240 nm; the thickness of the third silicon dioxide layer 132 is 560nm, and the thickness of the fourth silicon layer 133 is 240 nm; the thickness of the fourth silicon dioxide layer 134 is 560nm, and the thickness of the fifth silicon layer 135 is 240 nm.
Example three:
the third embodiment of the utility model provides a continuous spectrum gas sensor, which comprises the first embodiment of the utility model, namely a linear variable optical filter 21, an infrared detector array 22, a sealing cap 23, a base 24 and a pin 25, wherein the sealing cap 23 is arranged on one side of the base 24, the infrared detector array 22 is arranged on one side of the base 24, the pin 25 is arranged on the other side of the base 24 and is connected with the infrared detector array 22 after penetrating through the base 24, and the linear variable optical filter 21 is arranged on the sealing cap 23 and is positioned right above the infrared detector array 22.
In conclusion, the utility model realizes linear variable optical filtering by using a single optical filter, integrates the linear variable optical filter with the infrared detector array, realizes the monitoring of mixed gas by using a single optical filter and a single NDIR gas sensor, and reduces the size of the mixed gas sensor based on the NDIR technology; due to the adoption of the linear variable optical filter, the position of the infrared detection unit can be properly selected according to the type of the gas to be detected, and the type of the gas to be monitored of the mixed gas sensor based on the NDIR technology is improved; a plurality of infrared detection unit detection results can be selected and compared through an algorithm technology, and therefore the accuracy of the mixed gas sensor based on the NDIR technology is improved.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (7)
1. The linear variable optical filter is characterized by comprising a substrate, a conical cavity, a horizontal Bragg reflection layer and an inclined Bragg reflection layer, wherein the inclined Bragg reflection layer and the horizontal Bragg reflection layer are arranged on the upper side and the lower side of the conical cavity, and one side of the substrate is connected with the horizontal Bragg reflection layer.
2. The linear variable optical filter of claim 1, wherein the horizontal bragg reflection layer comprises a first silicon dioxide layer, a first silicon layer, a second silicon dioxide layer and a second silicon layer, and the first silicon dioxide layer, the first silicon layer, the second silicon dioxide layer and the second silicon layer are sequentially deposited on the substrate by physical vapor deposition or chemical vapor deposition.
3. The linear variable optical filter of claim 2, wherein the first silicon dioxide layer has a thickness of 100 to 1000nm, and the first silicon layer has a thickness of 100 to 1000 nm; the thickness of the second silicon dioxide layer is 100-1000nm, and the thickness of the second silicon layer is 100-1000 nm.
4. The linear variable filter of claim 1, wherein the tapered cavity is a silicon dioxide tapered cavity, and has a thinnest portion with a thickness of 500-1000nm and a thickest portion with a thickness of 1500-3000 nm.
5. The linear variable optical filter of claim 1, wherein the tilted bragg reflector layer comprises a third silicon layer, a third silicon dioxide layer, a fourth silicon dioxide layer and a fifth silicon layer, and the third silicon layer, the third silicon dioxide layer, the fourth silicon dioxide layer and the fifth silicon layer are sequentially deposited on the tapered cavity by physical vapor deposition or chemical vapor deposition.
6. The linear variable filter of claim 5, wherein the thickness of the third silicon layer is 100-1000 nm; the thickness of the third silicon dioxide layer is 100-1000nm, and the thickness of the fourth silicon layer is 100-1000 nm; the thickness of the fourth silicon dioxide layer is 100-1000nm, and the thickness of the fifth silicon layer is 100-1000 nm.
7. A continuous spectrum gas sensor, comprising the linear variable filter of claims 1-6, an infrared detector array, a cap, a base, and pins, wherein the cap is disposed on one side of the base, the infrared detector array is disposed on one side of the base, the pins are disposed on the other side of the base, the pins penetrate through the base and are connected with the infrared detector array, and the linear variable filter is disposed on the cap and directly above the infrared detector array.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202123427968.7U CN216718183U (en) | 2021-12-31 | 2021-12-31 | Linear variable optical filter and continuous spectrum gas sensor using same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202123427968.7U CN216718183U (en) | 2021-12-31 | 2021-12-31 | Linear variable optical filter and continuous spectrum gas sensor using same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN216718183U true CN216718183U (en) | 2022-06-10 |
Family
ID=81889329
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202123427968.7U Active CN216718183U (en) | 2021-12-31 | 2021-12-31 | Linear variable optical filter and continuous spectrum gas sensor using same |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN216718183U (en) |
-
2021
- 2021-12-31 CN CN202123427968.7U patent/CN216718183U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5039490A (en) | Sensor element for determination of concentration of substances | |
| RU2549912C2 (en) | Combined optoelectrochemical sensor of nitrogen oxides in gaseous samples | |
| CA2184310C (en) | Diffused light reflectance readhead | |
| KR102214389B1 (en) | Thermopile infrared individual sensor to measure temperature or detect gases | |
| JPH10123048A (en) | Integrated sensor and method for detecting biochemical sample | |
| CN103842799A (en) | Systems and methods for self-referenced detection and imaging of sample arrays | |
| CN108426833A (en) | A kind of complete or collected works' accepted way of doing sth infrared gas sensor based on box-like air chamber structure | |
| WO2018176677A1 (en) | Lamination-structured fluorescent sensor | |
| CN108489924A (en) | A kind of sensing probe and non-dispersive infrared gas sensor detecting system | |
| WO2009075487A2 (en) | Image sensor with a spectrum sensor | |
| JP2019518941A (en) | Transient hemolysis detection | |
| CN216718183U (en) | Linear variable optical filter and continuous spectrum gas sensor using same | |
| CN109596560B (en) | Multi-channel integrated infrared gas sensor | |
| CN114136892A (en) | Linear variable optical filter and continuous spectrum gas sensor using same | |
| CN106979824A (en) | A kind of NDIR ethylene gas sensor and its measuring method | |
| CN110687068B (en) | Infrared detector and infrared gas sensor | |
| CN208060387U (en) | A kind of multi-functional formaldehyde gas real-time monitoring device | |
| CN108169428B (en) | Formaldehyde gas, humidity and temperature integrated monitoring equipment | |
| CN206725101U (en) | A kind of NDIR ethylene gas sensor | |
| KR20180042237A (en) | Optical sensor with narrow angular response | |
| EP0979994A2 (en) | Porous material optical gas sensing device | |
| CN108318439A (en) | A kind of complete or collected works' accepted way of doing sth infrared gas sensor based on oval air chamber structure | |
| CN114486796A (en) | NDIR multi-component gas detection module | |
| CN113984699A (en) | Expiration formula alcohol detection device | |
| CN217766070U (en) | Infrared sensor array chip and mixed gas sensor using same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |