CN109596560B - A multi-channel integrated infrared gas sensor - Google Patents
A multi-channel integrated infrared gas sensor Download PDFInfo
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- CN109596560B CN109596560B CN201811559279.1A CN201811559279A CN109596560B CN 109596560 B CN109596560 B CN 109596560B CN 201811559279 A CN201811559279 A CN 201811559279A CN 109596560 B CN109596560 B CN 109596560B
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 64
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 64
- 239000010703 silicon Substances 0.000 claims abstract description 64
- 230000003287 optical effect Effects 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 238000012360 testing method Methods 0.000 claims abstract description 13
- 235000012431 wafers Nutrition 0.000 claims description 58
- 238000012545 processing Methods 0.000 claims description 15
- 238000001514 detection method Methods 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 230000003321 amplification Effects 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 2
- 241000270295 Serpentes Species 0.000 claims 1
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- 238000005259 measurement Methods 0.000 abstract description 10
- 230000005540 biological transmission Effects 0.000 abstract description 8
- 238000005516 engineering process Methods 0.000 abstract description 5
- 238000002360 preparation method Methods 0.000 abstract description 5
- 239000007789 gas Substances 0.000 description 89
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- 238000001745 non-dispersive infrared spectroscopy Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 5
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- 238000010521 absorption reaction Methods 0.000 description 4
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- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 2
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
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- 238000001312 dry etching Methods 0.000 description 1
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- 238000005566 electron beam evaporation Methods 0.000 description 1
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- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
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- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3504—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing gases, e.g. multi-gas analysis
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Abstract
The invention belongs to the technical field of gas sensors, and particularly relates to a multi-channel integrated infrared gas sensor. According to the invention, the multi-channel air chamber is prepared on the silicon substrate, the fully integrated infrared gas sensor is obtained by combining the silicon substrate with the integrated circuit, and the arrangement mode of the air holes enables the gas to enter the air groove only through the air holes above the air groove and then diffuse into the optical groove, so that the quantity of light escaping from the air holes during the transmission process of the light in the optical groove is reduced, and the test precision is improved. The infrared gas measurement device has the advantages of small size, high measurement precision and easiness in batch preparation, effectively expands the application range of the infrared gas measurement technology, and is suitable for more small or portable electronic devices such as mobile phones, smart watches, multifunctional bracelets and the like.
Description
Technical Field
The invention belongs to the technical field of gas sensors, relates to an infrared gas sensor, and particularly relates to a multi-channel integrated infrared gas sensor.
Background
Infrared gas sensors have a wide range of applications, such as dynamic detection of explosive gases, dynamic detection of atmospheric greenhouse gases, detection of household harmful gases, and the like. The working principle of infrared gas sensors is based on the lambert-beer theorem and the infrared absorption spectrum. The lambert-beer theorem can be summarized as: the proportion of light absorbed by the transparent medium is independent of the incident light intensity and only dependent on the concentration of the transparent medium and the optical path length; the formula can be abbreviated as A ═ K × L × C, A is the absorption ratio of the emergent light and the incident light of the gas, L is the optical path length, C is the concentration of the gas to be measured, and K is the absorption coefficient of the gas to be measured. The basic principle of infrared absorption spectrum can be summarized as that chemical bonds or functional groups forming a substance have a fixed vibration frequency, when infrared light with a specific wavelength irradiates the substance, vibration absorption occurs, and different substances absorb infrared light with different frequencies, so that information about the chemical bonds or functional groups contained in the substance can be obtained, and the type of the substance can be judged. By the Labober's theorem and the basic principle of infrared absorption spectrum, an infrared gas sensor for detecting gas concentration or gas species can be manufactured.
The infrared gas sensor can be divided into a spectroscopic type and a non-spectroscopic type according to different working modes of a light source, and the light source structure of the non-spectroscopic type infrared (NDIR) gas sensor is relatively simple and wins more applications. The basic components of the NDIR gas sensor mainly comprise an infrared light source, a gas chamber, a filter and an infrared sensitive element, and circuits such as signal processing, power supply and the like are usually arranged outside the sensor. When the sensor works normally, the infrared light source emits pulse infrared light with fixed frequency under the drive of the modulation signal, and simultaneously, the gas to be detected enters the gas chamber through the vent hole arranged on the gas chamber; the pulse infrared light enters the gas chamber through an inlet and passes through the gas to be detected, and the infrared light with a specific wave band is absorbed by the gas to be detected to generate attenuation; the attenuated infrared light reaches the infrared sensitive element through the outlet of the gas chamber, and is absorbed and detected by the sensitive element to generate a response signal; the information such as the concentration or the category of the gas to be detected can be obtained by calibrating the response signals of the sensor under the action of different gas concentrations.
In order to improve the accuracy and immunity of infrared gas sensors, NDIR gas sensors typically employ a ratio of a test channel to a reference channel for gas concentration measurement. The signal intensity of the reference channel is hardly changed along with the change of the gas concentration by selecting the filter wavelengths of the test channel and the reference channel, the signal intensity of the test channel is reduced along with the increase of the gas concentration, and the concentration of the gas to be detected in the test channel is calculated through the ratio of the signal intensities of the two channels.
As can be seen from the principle of the NDIR gas sensor, the optical transmission efficiency and the gas exchange efficiency of the gas chamber have significant effects on the test accuracy and response time of the gas chamber, and the conventional gas chamber structure usually adopts a design of opening gas holes on a light channel for gas exchange, and the gas holes arranged on the light channel cause the attenuation of light transmission; in order to ensure the gas measurement accuracy, the gas chamber generally needs to have a longer optical path length, so that the volume of the sensor is difficult to reduce and not easy to integrate and miniaturize, and the infrared light attenuation caused by non-gas absorption is also aggravated, thereby further causing the reduction of the measurement accuracy and the extension of the response time.
In summary, the structural features and design ideas of the traditional NDIR gas sensor and the gas chamber thereof are difficult to meet the development requirements of portable devices and mobile terminals on miniaturization, integration and intellectualization of infrared gas sensors.
Disclosure of Invention
Aiming at the problems or the defects, the invention provides a multi-channel integrated infrared gas sensor, a multi-channel micro gas chamber structure with a silicon chip as a substrate and an integrated circuit layer design matched with the multi-channel micro gas chamber structure, aiming at solving the problems that the existing NDIR gas sensor has a complex structure and is not easy to integrate and miniaturize. The device has the advantages of small volume, high measurement precision, high integration level, batch preparation and the like.
The technical scheme of the invention is as follows:
a multi-channel integrated infrared gas sensor is composed of upper and lower air chamber silicon wafers and an integrated circuit layer.
The silicon wafer of the upper air chamber is provided with air holes, and the air holes are through holes penetrating through the silicon wafer;
the lower-layer air chamber silicon wafer is provided with n +1 optical grooves which are used as the conduction paths of infrared light of the reference channel and the measuring channel; wherein n is more than or equal to 1, and n is the number of the gas types measured by the sensor.
The silicon wafer with the lower air chamber is provided with at least 1 air groove for communicating the air holes of the silicon wafer with the upper air chamber and the light grooves of the silicon wafer with the lower air chamber, and each light groove is provided with at least 1 air groove communicated with the light groove.
An infrared light source window and an infrared sensitive element window are respectively arranged at the head end and the tail end of the light groove, and the windows are through holes penetrating through the silicon wafer, so that the infrared light source window, the infrared sensitive element window and the micro air chamber form a channel capable of entering and exiting; n +1 light grooves are respectively divided into detection channels and reference channels, one is a reference channel, and the other n are detection channels; the inlets of all the channels share one infrared light source window, the outlets of all the channels are separated to form independent sensitive element windows, each sensitive element window is the same and corresponds to one sensitive element, and the sensitive elements of each channel are the same sensitive elements; the planar shape of the optical groove is zigzag or linear.
Bonding the upper layer air chamber silicon wafer and the lower layer air chamber silicon wafer on the surface with the light groove and the air groove to form a micro air chamber formed by combining the light groove, the air groove and the air hole, and communicating the micro air chamber with the outside through the air hole; the air holes formed in the upper-layer silicon wafer air chamber are only distributed at the corresponding positions of the lower-layer air chamber silicon wafer air grooves, and the air holes are not formed at the corresponding positions of the lower-layer air chamber silicon wafer light grooves, so that the quantity of light escaping from the air holes in the transmission process of the light in the light grooves is reduced, and the testing precision is improved; all the light grooves are communicated with the gas grooves, and gas can only enter the gas grooves through the gas holes above the gas grooves and then is diffused into the light grooves.
The integrated circuit layer comprises an integrated circuit substrate, an infrared light source, an infrared sensitive element and a signal processing circuit, wherein the infrared light source, the infrared sensitive element and the signal processing circuit are arranged on the upper surface of the integrated circuit substrate; the infrared light source and the infrared detector are respectively and correspondingly arranged on the infrared light source window and the infrared sensitive element window.
The integrated circuit layer has the functions of infrared signal processing, power supply driving and external electrical interconnection; the infrared light source is driven by a power supply to provide a driving signal, infrared light is converted into an electric signal through the sensing element, signal amplification and digital-to-analog conversion are carried out through the integrated circuit, and finally, the signal output is converted into a test result through electrical interconnection with the outside.
Furthermore, the surface of the upper layer air chamber silicon wafer bonded with the lower layer air chamber silicon wafer is also provided with a light groove and an air groove corresponding to the lower layer air chamber silicon wafer, so that the volume of the micro air chamber is increased, and the test precision is improved.
Furthermore, metal films grow on the surfaces of the optical groove and the air groove, so that the infrared reflectivity of the surfaces of the optical groove and the air groove is increased, and the transmission efficiency of infrared light is improved.
Further, when the light emitted by the light source is broad-spectrum infrared light, the windows of the sensitive elements at the tail ends of all the light groove channels of the silicon wafer of the lower air chamber are all provided with light filters.
In summary, the invention prepares the multi-channel air chamber on the silicon substrate, combines with the integrated circuit to obtain the fully integrated infrared gas sensor, and enables the gas to enter the air tank only through the air holes above the air tank by the arrangement mode of the air holes, and then the gas is diffused into the optical tank, thereby reducing the quantity of light escaping from the air holes during the transmission of the light in the optical tank, and improving the testing precision. The infrared gas measurement device has the advantages of small size, high measurement precision and easiness in batch preparation, effectively expands the application range of the infrared gas measurement technology, and is suitable for more small or portable electronic devices such as mobile phones, smart watches, multifunctional bracelets and the like.
Drawings
FIG. 1 is a 3D schematic of an embodiment of the sensor;
FIG. 2 is a schematic cross-sectional view of an embodiment of a sensor;
FIG. 3 is a top view of a silicon wafer under a gas chamber;
FIG. 4 is a bottom view of a silicon wafer on a gas cell;
FIG. 5 is a schematic diagram of a wafer level device dicing;
reference numerals: 101-a bottom integrated circuit substrate, 102-a lower silicon wafer of an air chamber, 103-an upper silicon wafer of the air chamber, 104-an optical filter, 105-an infrared light source, 106-an infrared sensitive element, 107-an air hole, 108-an optical path channel, 109-an air chamber gas channel, 201-an optical path channel infrared light outlet and 202-an optical path channel infrared light inlet.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples.
The structure of the fully integrated infrared gas sensor in this embodiment is shown in fig. 1, and is formed by bonding upper and lower silicon wafers 102 and 103 of a micro gas chamber and an integrated circuit substrate 101.
The upper and lower silicon wafers 102 and 103 of the micro air chamber are formed by wet etching or dry etching on a silicon substrate by using a deep silicon processing technology to form micro grooves as channels for gas diffusion and infrared light transmission, and then the upper and lower silicon wafers 102 and 103 are bonded together by a bonding process to form the micro air chamber.
The number of the grooves on the surface of the silicon wafer 102 under the micro air chamber is two, three through holes are formed at two ends of each groove, and one end of each groove shares one through hole, namely an infrared ray inlet of a light path channel, as shown by 202 in fig. 3; the other end is respectively connected with two through holes, namely an infrared ray outlet of the light path channel, as shown by 201 in fig. 3. Between the two optical path grooves, a groove is prepared in the same processing manner as a gas channel of the gas chamber, and this channel is connected to both optical path channels, as shown at 109 in fig. 3.
The micro air chamber upper silicon wafer 103 has the same groove structure as the lower silicon wafer, as shown in fig. 4. The upper silicon chip is provided with a light path channel groove 108 and a chamber gas channel groove 109 which are the same as those of the lower silicon chip, and meanwhile, a plurality of air holes 107 are formed in the position of the chamber gas channel 109 and are communicated with the external environment and the gas channel, so that the external environment gas can enter the chamber channel and then diffuse into the light path channel.
The cross sections of the grooves of the upper and lower silicon wafers are trapezoidal, V-shaped, square and the like according to different processing technologies; the cross section of the inlet and outlet of the infrared ray and the air hole is in a trapezoid shape, a hourglass shape, a square shape and the like according to different processing technologies. A layer of metal film is prepared on the surfaces of all the grooves in the modes of thermal evaporation, electron beams, sputtering and the like, so that the reflectivity of the surfaces of the grooves to infrared light is improved, and the dissipation of the infrared light in the transmission process is reduced. After the preparation of the grooves, the upper silicon wafer and the lower silicon wafer are combined together through bonding processes such as metal bonding, hydrophilic bonding, silicon-silicon bonding and the like, and the grooves of the upper silicon wafer and the lower silicon wafer form a semi-sealed channel after bonding to serve as a light path channel of infrared light.
The integrated circuit substrate mainly comprises an infrared light source 105, an infrared sensitive element 106 and a signal processing integrated circuit, as shown by 101 in fig. 1. The position of the infrared light source 105 corresponds to an optical path channel infrared light inlet 202 designed in the silicon wafer 102 under the micro air chamber; the position of the infrared sensitive element 106 corresponds to an infrared ray outlet 201 of a light path channel designed in the silicon wafer 102 under the micro air chamber.
The infrared light source 105 can be an LED lamp or a thermal light source prepared by an MEMS process, and can emit modulated infrared light under the drive of a power supply in an integrated circuit; the infrared sensitive elements 106 are films or blocks made of various heat sensitive materials or infrared sensitive materials, and the two infrared sensitive elements are identical, can absorb modulated infrared light and convert the modulated infrared light into an electric signal with information of the gas to be detected, and can obtain the information of the gas to be detected after the electric signal enters a signal processing circuit. An optical filter 104 is arranged between the infrared sensitive element 106 and an infrared ray outlet 201 of the light path channel; the center wavelength and the bandwidth of the optical filter of the reference channel and the optical filter of the test channel are different, the infrared signal of the test channel passing through the optical filter is almost only infrared light with specific wavelength of the measured gas information, the infrared signal of the reference channel passing through the optical filter is not provided with the measured gas information, and the intensity of the infrared signal is hardly changed along with the change of parameters such as the measured gas concentration.
The micro air chamber and the integrated circuit substrate are integrated together to form the micro fully-integrated infrared gas sensor. An external power supply is applied to the integrated circuit substrate, the integrated circuit power supply drives to generate a driving signal, and the driving signal is supplied to the infrared light source to emit modulated infrared light and the normal operation of the signal processing circuit; the infrared light is emitted from a light source, enters the optical path channel 108 through the optical path channel infrared light inlet 202, simultaneously, the gas to be measured in the environment enters the gas chamber gas channel 109 through the gas hole 107 and is diffused into the optical path channel 108, the infrared light passes through the gas to be measured to be attenuated, then the infrared light passes through the optical filter 104 to be filtered to remove excessive wavelengths, reaches the infrared sensitive element 106, is converted into an electric signal after being absorbed, enters the integrated circuit to be subjected to signal processing, and finally is transmitted to the outside of the sensor to be analyzed.
The preparation process of the detector is described by combining the following specific implementation steps:
and (3) preparing a micro air chamber, wherein the silicon-based micro air chamber is prepared mainly by utilizing anisotropic corrosion of monocrystalline silicon and a laser etching process. A patterned photoresist mask was fabricated on the wafer by selecting 0.5mm thick (100) oriented 4 inch single crystal silicon, the pattern of which can be referred to the shapes of fig. 3 and 4.
Preparing wet etching solution, selecting the depth value of the groove, calculating etching time, and manufacturing a light path channel 108 and a gas channel 109 of an upper silicon wafer and a lower silicon wafer;
patterned photoresist is prepared on the other surfaces of the upper silicon chip groove and the lower silicon chip groove, and then through holes are etched by laser to be used as air holes 107 of the micro air chamber and inlets and outlets 201 and 202 of the light path channel.
Plating a layer of Au film with the thickness of 20nm on the surfaces of the grooves of the upper and lower silicon wafers by using electron beam evaporation, evaporation resistance or sputtering and the like; and then directly bonding the 4-inch wafers of the upper and lower silicon wafers together by means of eutectic bonding.
Preparing an integrated circuit substrate on a 4-inch wafer silicon chip by using an MEMS (micro electro mechanical System) process, wherein the integrated circuit substrate comprises a power supply drive, a signal processing and an MEMS infrared light source; then, a pyroelectric LTO (lithium tantalate) single crystal block with a thickness of 75um was fixed on the substrate and connected to a circuit.
The wafer of the silicon-based micro gas chamber and the integrated circuit substrate wafer are subjected to wafer-level bonding, and then are cut by means of laser and the like to form a plurality of single integrated infrared gas sensors, as shown in fig. 5.
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| CN110371920B (en) * | 2019-07-12 | 2023-09-08 | 北京机械设备研究所 | Method and device for inhibiting vibration sensitivity of NDIR gas sensor |
| CN113008823B (en) * | 2019-12-20 | 2023-02-21 | 有研工程技术研究院有限公司 | Full-integrated infrared gas sensor |
| CN113358596B (en) * | 2021-06-07 | 2024-03-22 | 大连理工大学 | A miniature NDIR integrated infrared gas sensor with double-layer gas chamber |
| CN114509417A (en) * | 2022-02-15 | 2022-05-17 | 南京浦光芯片科技有限公司 | An integrated gas chamber fluorescent gas detection device |
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