CN110658149A - Silicon-based air chamber for silicon-based infrared gas sensor - Google Patents
Silicon-based air chamber for silicon-based infrared gas sensor Download PDFInfo
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 96
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 95
- 239000010703 silicon Substances 0.000 title claims abstract description 95
- 238000009792 diffusion process Methods 0.000 claims abstract description 22
- 230000000149 penetrating effect Effects 0.000 claims abstract description 4
- RZJQYRCNDBMIAG-UHFFFAOYSA-N [Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Zn].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn] Chemical class [Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Zn].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn] RZJQYRCNDBMIAG-UHFFFAOYSA-N 0.000 claims description 13
- OFLYIWITHZJFLS-UHFFFAOYSA-N [Si].[Au] Chemical compound [Si].[Au] OFLYIWITHZJFLS-UHFFFAOYSA-N 0.000 claims description 13
- 230000005496 eutectics Effects 0.000 claims description 13
- 239000007791 liquid phase Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 7
- 230000008569 process Effects 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 238000001514 detection method Methods 0.000 claims description 4
- 229920006395 saturated elastomer Polymers 0.000 claims description 4
- 238000001039 wet etching Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000004321 preservation Methods 0.000 claims description 3
- 238000013461 design Methods 0.000 abstract description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 10
- 238000001745 non-dispersive infrared spectroscopy Methods 0.000 description 9
- 230000007797 corrosion Effects 0.000 description 8
- 238000005260 corrosion Methods 0.000 description 8
- 230000010354 integration Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 206010063385 Intellectualisation Diseases 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 description 1
- 238000013473 artificial intelligence Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000007084 catalytic combustion reaction Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3504—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing gases, e.g. multi-gas analysis
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Abstract
The invention discloses a silicon-based gas chamber for a silicon-based infrared gas sensor, which belongs to the field of infrared gas sensors and specifically comprises an upper silicon wafer and a lower silicon wafer; the upper layer silicon chip and the lower layer silicon chip are connected in a bonding mode; the upper layer silicon wafer comprises an infrared light source window and an infrared detector window; a gas chamber cavity and a gas diffusion groove are arranged on the lower silicon wafer; the infrared light source window and the infrared detector window are through holes penetrating through the upper silicon wafer; the air chamber cavity is of a frustum pyramid structure; the gas diffusion groove is positioned around the interface of the lower silicon wafer and the upper silicon wafer; the inclined planes at the two ends of the pyramid shape are reflecting surfaces, and the air chamber cavity and the lower surface reflecting surface of the upper layer silicon wafer form a reflecting chamber of infrared light; the gas diffusion groove is used for enabling external gas to enter the inner part of the gas chamber cavity. The silicon-based gas chamber disclosed by the invention is convenient to be externally integrated with an infrared light source, a detector and other circuit modules, and the degree of freedom of integrated design is improved.
Description
Technical Field
The invention belongs to the field of infrared gas sensors, and particularly relates to a silicon-based gas chamber for a silicon-based infrared gas sensor.
Background
The gas sensor has wide application requirements in the fields of atmospheric monitoring, industrial processes, security alarm, smart home and the like, and along with the development of the Internet of things and artificial intelligence, the gas sensor develops towards the trend of miniaturization, intellectualization and integration. The types of the gas sensors mainly comprise a semiconductor type, a catalytic combustion type, an electrochemical type and an infrared type, wherein the infrared gas sensor is based on a Non-Dispersive infrared (Non-Dispersive Infra-Red/NDIR) absorption principle, utilizes infrared absorption of gas to a specific waveband to distinguish the types of the gas, measures the change of light absorption intensity and calculates the concentration of the measured gas through the Lambert-beer law. The NDIR gas sensor has the advantages of good selectivity, high precision, good reliability, long service life and strong anti-interference capability, and is widely applied to CH4、CO2Etc. detection of the gas.
The NDIR gas sensor mainly comprises an infrared light source, a gas chamber, a narrow-band filter, an infrared detector and a corresponding signal processing circuit, wherein the sensitivity of the NDIR gas sensor is closely related to the gas absorption optical path, and the gas chamber needs to have enough volume to meet the sensitivity requirement, so that the volume of the NDIR gas sensor is larger, and the application range of the NDIR gas sensor is limited.
With the development of MEMS technology, all parts of the NDIR gas sensor show the development trend of miniaturization and integration, and with the appearance of a silicon-based MEMS gas chamber, the size of the NDIR gas sensor is greatly reduced, so that on-chip integration application is expected to be realized. Patent publication No. CN107328730A discloses a fully integrated infrared gas sensor based on a plurality of micro-groove gas chambers, publication No. CN108318439A discloses a fully integrated infrared gas sensor based on an oval gas chamber structure, and a miniaturized NDIR gas sensor based on an S-shaped or serpentine gas chamber structure is also disclosed. The common point of the air chambers is that an outlet through hole containing an infrared light source, an inlet through hole containing an infrared detector, a gas diffusion through hole and an internal gold-plated reflecting surface are integrated with the infrared light source, the detector and a signal processing circuit layer in a layer-by-layer stacking mode, the air chamber light source and the detector through hole are both designed at the bottom, secondary etching is needed, the process is complicated, especially, the structure has high requirement on the alignment precision of the lower layer during stacking, and the positions of the light source and the detector are designed in the air chambers, so that the integration and batch manufacturing are not facilitated; in addition, the existing structure is usually provided with air holes at the upper part of the air chamber, so that in order to avoid the influence of infrared ray leakage on the sensitivity of the sensor, the number of the air holes needs to be reduced as much as possible, the gas diffusion efficiency is influenced, and the response time of the gas sensor is prolonged.
Disclosure of Invention
Aiming at the defects of the prior art, the invention aims to provide a silicon-based gas chamber for a silicon-based infrared gas sensor, and aims to solve the problems that the existing gas chamber is generally integrated with an infrared light source, a detector and a signal processing circuit in a layer-by-layer stacking mode, and the gas chamber light source and a detector through hole are designed inside, so that the mass production is not facilitated due to the complex process.
In order to achieve the aim, the invention provides a silicon-based gas chamber based on an infrared gas sensor, which comprises an upper silicon wafer and a lower silicon wafer; the upper layer silicon chip and the lower layer silicon chip are connected in a bonding mode;
the upper layer silicon wafer comprises an infrared light source window and an infrared detector window; a gas chamber cavity and a gas diffusion groove are arranged on the lower silicon wafer;
the infrared light source window and the infrared detector window are through holes penetrating through the upper silicon wafer; the air chamber cavity is of a frustum pyramid structure; the gas diffusion groove is positioned around the interface of the lower silicon wafer and the upper silicon wafer;
the infrared light source window is used for receiving infrared light; the infrared detector window is used for dispersing infrared light passing through the air chamber cavity; the inclined planes at the two ends of the pyramid shape are reflecting surfaces, and the air chamber cavity and the lower surface reflecting surface of the upper layer silicon wafer form a reflecting chamber of infrared light; the gas diffusion groove is used for enabling external gas to enter the inner part of the gas chamber cavity;
preferably, the lower surface of the upper silicon wafer and the air chamber cavity of the lower silicon wafer are plated with metal reflecting surfaces.
Preferably, the infrared light source and the infrared detector are integrated outside the air chamber cavity body in a bonding mode; the infrared light source is attached to the infrared light source window, and the infrared detector is attached to the infrared detection window; the infrared light source is used for emitting infrared light; the infrared detector is used for receiving infrared light;
preferably, the infrared light source window, the infrared detector window, the gas chamber cavity and the gas diffusion groove all adopt wet etching processes.
Preferably, the chamber cavity is wet etched with KOH solution.
Preferably, the upper silicon wafer and the lower silicon wafer are bonded by gold-silicon eutectic bonding.
Preferably, the gold-silicon eutectic bonding comprises:
(1) heating the gold-silicon contact surface to a preset temperature, preserving heat, and forming a liquid phase alloy on the gold-silicon contact surface;
(2) after the heat preservation time, the temperature is continuously reduced, the liquid phase alloy is separated out according to the saturated components until the temperature is lower than the eutectic point of the contact surface, and all the liquid phase alloy is separated out to complete bonding.
Through the technical scheme, compared with the prior art, the invention can obtain the following advantages
Has the advantages that:
(1) the upper silicon wafer disclosed by the invention is provided with the infrared light source window and the infrared detector window, so that the infrared light source and the detector can be conveniently integrated outside the air chamber, and meanwhile, the infrared light source and the detector can be conveniently electrically connected with other circuit modules in a lead bonding mode, the integration design freedom degree is improved, and the mass manufacturing is convenient.
(2) The side wall of the air chamber cavity of the lower silicon wafer is an inclined plane, the lower surface of the upper silicon wafer and the inner part of the air chamber cavity are both plated with metal reflecting mirror surfaces, so that the optical path can be increased through multiple reflections, and the transmission efficiency of infrared light from an infrared light source window to an infrared detector window can be increased.
Drawings
FIG. 1 is a schematic diagram of a silicon-based gas cell provided by the present invention;
FIG. 2 is a top view of an upper silicon wafer and a lower silicon wafer in a gas chamber according to the present invention;
FIG. 3 is a cross-sectional view of the air chamber provided by the present invention taken along line A-A of FIG. 2;
reference numerals: 1-upper silicon wafer; 101-infrared light source window; 102-an infrared detector window; 2-lower silicon chip; 201-air chamber cavity; 202-gas diffusion cell.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
The invention provides a silicon-based air chamber for a silicon-based infrared gas sensor, which comprises an upper silicon wafer 1 and a lower silicon wafer 2; the upper layer silicon wafer 1 and the lower layer silicon wafer 2 are connected in a bonding mode;
the upper silicon wafer 1 comprises an infrared light source window 101 and an infrared detector window 102; a gas chamber cavity 201 and a gas diffusion groove 202 are arranged on the lower silicon wafer 2;
the infrared light source window 101 and the infrared detector window 102 are through holes penetrating through the upper silicon wafer 1; the air chamber cavity 201 is of a frustum pyramid structure; the gas diffusion groove 202 is positioned around the interface of the lower silicon wafer 2 and the upper silicon wafer 1;
the infrared light source window 101 is used for receiving infrared light; the infrared detector window 102 is used for dispersing infrared light passing through the air chamber cavity 201; the inclined planes at the two ends of the pyramid shape are reflecting surfaces, and form a reflecting chamber of infrared light together with the reflecting surface of the lower surface of the upper silicon wafer 1; the gas diffusion groove 202 is used to allow external gas to enter the inside of the gas chamber body 201.
Preferably, the lower surface of the upper silicon wafer 1 and the air chamber cavity 201 of the lower silicon wafer 2 are plated with metal reflecting surfaces.
Preferably, the infrared light source and the infrared detector are integrated outside the air chamber cavity 201 in a bonding mode; the infrared light source is attached to the infrared light source window 101, and the infrared detector is attached to the infrared detection window 102; the infrared light source is used for emitting infrared light; the infrared detector is used for receiving infrared light;
preferably, the infrared light source window 101, the infrared detector window 102, the gas chamber cavity 201 and the gas diffusion groove 202 all adopt a wet etching process.
Preferably, the chamber body 201 is wet etched with KOH solution.
Preferably, the upper silicon wafer 1 and the lower silicon wafer 2 are bonded by using a gold-silicon eutectic bonding technology.
Preferably, the gold-silicon eutectic bonding comprises:
(1) heating the gold-silicon contact surface to a preset temperature, preserving heat, and forming a liquid phase alloy on the gold-silicon contact surface;
(2) after the heat preservation time, the temperature is continuously reduced, the liquid phase alloy is separated out according to the saturated components until the temperature is lower than the eutectic point of the contact surface, and all the liquid phase alloy is separated out to complete bonding.
Examples
Fig. 1 is a three-dimensional structure diagram of a silicon-based integrated gas chamber provided in an embodiment, and is formed by bonding an upper silicon wafer 1 and a lower silicon wafer 2, where the upper silicon wafer 1 is an upper cover plate of the integrated gas chamber and includes a square hole type infrared light source window 101 and an infrared detector window 102, and the lower silicon wafer 2 includes a gas chamber cavity 201 and a gas diffusion groove 202;
as shown in fig. 2, the square hole type infrared light source window 101, the infrared detector window 102, the air chamber cavity 201 and the gas diffusion groove 202 are all processed by a silicon wet etching process. Silicon has an anisotropic corrosion phenomenon in a potassium hydroxide (KOH) corrosion solution, wherein a fast corrosion surface is a (311) surface, and a slow corrosion surface is a (100) surface. Under the action of KOH corrosive liquid, a fast corrosion surface (311) surface appears at the edge of the original step of the mask, the newly appeared (311) surface gradually replaces the original (111) surface along with the advancement of corrosion, and after the (311) surface completely replaces the (111) surface, the fast corrosion surface continuously advances downwards, and finally an inclined plane with an inclination angle of 54.7 degrees is formed at the edge of the corrosion groove. Obviously, the etch cross-section is trapezoidal.
As shown in fig. 3, the upper silicon wafer 1 and the lower silicon wafer 2 are bonded together by using a gold-silicon eutectic bonding technique. When the gold and the silicon exist separately, the melting point is very high (Au melting point 1064 ℃, Si melting point 1414 ℃). But when the two materials are in close contact, the eutectic point is 363 ℃, and the eutectic composition ratio is 97.1/2.9 wt%. That is, after the two materials are in close contact, when the temperature is increased to 363 ℃, the two materials will react at a rate of 97.1: a mass ratio of 2.9 liquefies and the metal gradually dissolves over time to form a liquid phase alloy. If the temperature is increased continuously, the ratio of the dissolved components of the two components in the liquid phase alloy is wider, and the liquefaction rate is higher. When the temperature is reduced, the liquid phase alloy is gradually separated out as a saturated component, and the liquid phase alloy is completely separated out after the temperature is lower than the eutectic point of the alloy, so that bonding is realized.
According to the invention, the micro air chamber is prepared on the silicon substrate, the infrared light source window 101 is arranged on the silicon wafer 1 on the upper layer of the air chamber, so that the infrared light source and the detector can be integrated outside the air chamber cavity 201, the integration of the infrared light source and the detector of different types is facilitated, the electrode lead bonding of the infrared light source and the detector is facilitated, and the design of the gas diffusion groove can reduce the leakage of infrared light from the gas hole and improve the diffusion efficiency of gas so as to improve the response speed of the sensor.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (7)
1. A silicon-based gas chamber for a silicon-based infrared gas sensor is characterized by comprising an upper silicon wafer (1) and a lower silicon wafer (2); the upper silicon wafer (1) and the lower silicon wafer (2) are connected in a bonding mode;
the upper silicon wafer (1) comprises an infrared light source window (101) and an infrared detector window (102); a gas chamber cavity (201) and a gas diffusion groove (202) are arranged on the lower silicon wafer (2);
the infrared light source window (101) and the infrared detector window (102) are through holes penetrating through the upper silicon wafer (1); the air chamber cavity (201) is of a frustum pyramid structure; the gas diffusion groove (202) is positioned around the interface of the lower silicon wafer (2) and the upper silicon wafer (1);
the infrared light source window (101) is used for receiving infrared light; the infrared detector window (102) is used for emitting infrared light passing through the air chamber cavity (201); the inclined planes at the two ends of the frustum pyramid are reflecting surfaces, and the air chamber cavity (201) and the reflecting surface of the lower surface of the upper silicon wafer (1) form a reflecting cavity of infrared light; the gas diffusion groove (202) is used for enabling external gas to enter the interior of the gas chamber cavity (201).
2. The silicon gas cell according to claim 1, wherein the lower surface of the upper silicon wafer (1) and the gas cell cavity (201) of the lower silicon wafer (2) are both metal plated reflecting surfaces.
3. The silicon-based gas cell according to claim 1 or 2, wherein an infrared light source and an infrared detector are integrated outside the gas cell cavity (201) by bonding; the infrared light source is attached to the infrared light source window (101), and the infrared detector is attached to the infrared detection window (102); the infrared light source is used for emitting infrared light; the infrared detector is used for receiving infrared light.
4. The silicon-based gas cell according to claim 1 or 2, wherein the infrared light source window (101), the infrared detector window (102), the gas cell cavity (201) and the gas diffusion groove (202) all adopt a wet etching process.
5. The silicon gas cell according to claim 4, wherein the gas cell cavity (201) is wet etched with KOH solution.
6. A silicon gas cell according to any of claims 1 to 5, characterized in that the upper silicon wafer (1) and the lower silicon wafer (2) are bonded using a gold-silicon eutectic bond.
7. The silicon gas cell of claim 6, wherein the gold-silicon eutectic bond comprises:
(1) heating the gold-silicon contact surface to a preset temperature, preserving heat, and forming a liquid phase alloy on the gold-silicon contact surface;
(2) after the heat preservation time, the temperature is continuously reduced, the liquid phase alloy is separated out according to the saturated components until the temperature is lower than the eutectic point of the contact surface, and all the liquid phase alloy is separated out to complete bonding.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111900522A (en) * | 2020-06-09 | 2020-11-06 | 中国电子科技集团公司第十三研究所 | Silicon-based air-filled micro-coaxial structure and silicon-based air-filled micro-coaxial transmission line |
| CN112782338A (en) * | 2020-12-28 | 2021-05-11 | 苏州芯镁信电子科技有限公司 | Explosion-proof structure for gas sensor, preparation method and packaging method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104677851A (en) * | 2015-02-17 | 2015-06-03 | 苏州诺联芯电子科技有限公司 | Gas sensor and preparation method thereof |
| CN109564159A (en) * | 2016-05-31 | 2019-04-02 | Ams传感器英国有限公司 | Chemical sensor |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104677851A (en) * | 2015-02-17 | 2015-06-03 | 苏州诺联芯电子科技有限公司 | Gas sensor and preparation method thereof |
| CN109564159A (en) * | 2016-05-31 | 2019-04-02 | Ams传感器英国有限公司 | Chemical sensor |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111900522A (en) * | 2020-06-09 | 2020-11-06 | 中国电子科技集团公司第十三研究所 | Silicon-based air-filled micro-coaxial structure and silicon-based air-filled micro-coaxial transmission line |
| CN111900522B (en) * | 2020-06-09 | 2022-04-01 | 中国电子科技集团公司第十三研究所 | Silicon-based air-filled micro-coaxial structure and silicon-based air-filled micro-coaxial transmission line |
| CN112782338A (en) * | 2020-12-28 | 2021-05-11 | 苏州芯镁信电子科技有限公司 | Explosion-proof structure for gas sensor, preparation method and packaging method thereof |
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