CN217544628U

CN217544628U - Infrared photoelectric detector

Info

Publication number: CN217544628U
Application number: CN202221580647.2U
Authority: CN
Inventors: 梁琦; 耿士才; 杨星
Original assignee: Ruichuang Micro Nano Wuxi Technology Co ltd
Current assignee: Ruichuang Micro Nano Wuxi Technology Co ltd
Priority date: 2022-06-22
Filing date: 2022-06-22
Publication date: 2022-10-04
Anticipated expiration: 2032-06-22

Abstract

The embodiment of the application provides an infrared photoelectric detector, including photosensitive chip and readout circuit, photosensitive chip arranges in on the readout circuit and with readout circuit flip-chip interconnect, be equipped with infrared light absorption layer on at least one photosensitive chip lateral wall of photosensitive chip to backstop infrared light by photosensitive chip lateral wall gets into in the photosensitive chip. In the infrared photoelectric detector of the embodiment of the application, adopt the infrared light absorption layer to shelter from one, a plurality of or all photosensitive chip lateral walls of photosensitive chip to block in the infrared light is penetrated into photosensitive chip by the photosensitive chip lateral wall, can solve because the photosensitive chip lateral wall penetrates into the inhomogeneous problem of formation of image that the infrared light caused, improve the imaging quality.

Description

Infrared photoelectric detector

Technical Field

The application relates to the technical field of infrared, in particular to an infrared photoelectric detector.

Background

As a widely used night vision technology, the infrared imaging technology does not need any auxiliary lighting manner or low light condition, and directly images the infrared radiation of an object under the condition of no lighting at all, compared with other night vision technologies (artificial lighting, low light imaging). And the infrared imaging can provide excellent image performance under the environmental conditions of fog, cloud, smoke, dust and the like, and completely gets rid of the technical limit of artificial illumination or low-light imaging, so the infrared imaging is called as a third-generation all-weather imaging technology. An infrared photodetector is a device sensitive to infrared radiation that can convert infrared radiation invisible to the naked eye into a visible or measurable signal.

When imaging is performed by a tube-in-tube infrared photodetector, a phenomenon sometimes occurs in which the edge of an image is brighter than the central area of the image, as shown in fig. 1, resulting in deterioration of imaging quality. Moreover, this imaging non-uniformity problem is difficult to correct at a later stage by image processing algorithms.

Therefore, it is desirable to solve the problem that the edge of the image has stronger light intensity than the central area of the image when the infrared photodetector is used for imaging, so as to improve the imaging quality.

Disclosure of Invention

For solving current technical problem, the application provides an infrared photoelectric detector, can solve the problem that image edge differs with image central zone light intensity, improve infrared imaging quality.

In order to achieve the above purpose, the technical solution of the embodiment of the present application is implemented as follows:

the embodiment of the application provides an infrared photoelectric detector, including photosensitive chip and readout circuit, photosensitive chip arranges in on the readout circuit and with readout circuit flip-chip interconnect, be equipped with infrared light absorption layer on at least one lateral wall of photosensitive chip to backstop infrared light by photosensitive chip lateral wall gets into in the photosensitive chip.

In one embodiment, the infrared light absorption layer is formed on each side wall of the photosensitive chip, and the infrared light absorption layer is connected to form a closed shape surrounding the side walls of the photosensitive chip.

In one embodiment, the infrared light absorption layer is formed by epoxy resin glue with high infrared band absorption rate.

In one embodiment, the infrared light absorption layer is formed by epoxy resin glue which is adhered between the side wall of the photosensitive chip and the upper surface of the readout circuit through a glue dispenser after being cured.

In one embodiment, the infrared light absorption layer is a sheet structure made of an infrared light absorption material and is attached to or covered on the outer side of the side wall of the photosensitive chip.

The infrared photoelectric detector of the application has at least the following beneficial effects: in the infrared photoelectric detector of this application, adopt infrared light absorption layer to shelter from one, a plurality of or all lateral walls of photosensitive chip to block in the infrared light penetrates into photosensitive chip by the lateral wall, can solve because photosensitive chip lateral wall penetrates into the inhomogeneous problem of formation of image that the infrared light caused, improve the imaging quality.

Drawings

Fig. 1 is a schematic diagram of non-uniform imaging light intensity of a conventional infrared photodetector;

fig. 2 is a schematic diagram illustrating incidence of stray light of a conventional infrared photodetector;

fig. 3 is a schematic front view of an infrared photodetector according to an embodiment of the present application;

fig. 4 is a schematic front view of an infrared photodetector according to another embodiment of the present application;

fig. 5 is a top view of the infrared photodetector of fig. 4.

The elements in the figures are numbered as follows:

a photo chip 10 (wherein, photo chip side walls 11); a readout circuit 20; and an infrared light absorption layer 30.

Detailed Description

The technical solution of the present application is further described in detail with reference to the drawings and specific embodiments of the specification.

Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used in the description of the present application herein is for the purpose of describing particular embodiments only and is not intended to be limiting of implementations of the present application. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.

In the description of the present application, it is to be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on those shown in the drawings, merely for convenience of description and simplicity of description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, are not to be construed as limiting the present application. In the description of the present application, "a plurality" means two or more unless otherwise specified.

In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in this application will be understood to be a specific case for those of ordinary skill in the art.

After researching a tube package infrared photoelectric detector with brighter image edge than the image center area, it is found that when the photosensitive chip is thicker, a part of infrared light is emitted into the photosensitive chip through the side wall of the photosensitive chip, as shown in fig. 2. The incident light may come from light directly incident from the light window, light reflected by the readout circuitry, or stray light reflected by the package, eventually resulting in the light received at the edges of the light sensitive chip being stronger than the light at the central region of the light sensitive chip. Due to the stray light, the image edge is brighter than the image center area when the detector images, thereby causing the image quality to be poor.

Based on above-mentioned research result, this application provides an infrared detector, carries out the backstop through the source from stray light to can avoid stray light to get into photosensitive chip and cause the inhomogeneous phenomenon of image brightness of infrared formation of image, and then improve the imaging quality.

Referring to fig. 3, the infrared photodetector according to the embodiment of the present application includes a photosensitive chip 10 and a readout circuit 20, wherein the photosensitive chip 10 is disposed on the readout circuit 20 and flip-chip connected to the readout circuit 20. In order to prevent stray light from entering the photosensitive chip 10 from the photosensitive chip side walls 11 of the photosensitive chip 10, an infrared light absorption layer 30 is disposed on at least one photosensitive chip side wall 11 of the photosensitive chip 10. The infrared light absorption layer 30 is a sheet structure made of an infrared light absorption material, and is disposed outside the side wall 11 of the photo chip by means of attaching, covering, and the like. The infrared light absorption layer 30 can block and absorb infrared light, thereby playing a role of blocking infrared light from entering the inside of the photo chip 10 through the photo chip sidewall 11.

In practical applications, in some embodiments, one or more sidewalls 11 of the photo-sensitive chip 10 with more stray light can be blocked by the infrared light absorption layer 30; in other embodiments, all the sidewalls 11 of the photo chip 10 may be sealed by the infrared light absorption layer 30, and the infrared light absorption layers 30 are connected to each other to form a closed shape surrounding the periphery of the photo chip 10 to seal the sidewalls 11 of the photo chip.

Referring to fig. 4, the infrared photodetector of the embodiment of the present application includes a photosensitive chip 10 and a readout circuit 20, and the photosensitive chip 10 is disposed on the readout circuit 20 and flip-chip connected to the readout circuit 20. In order to prevent stray light from entering the photosensitive chip 10 from the photosensitive chip sidewall 11 of the photosensitive chip 10, an infrared light absorption layer 30 is disposed on at least one photosensitive chip sidewall 11 of the photosensitive chip 10, wherein the infrared light absorption layer 30 is formed by coating the photosensitive chip sidewall 11 with an epoxy resin adhesive. The epoxy resin adhesive of the infrared absorption layer 30 has a high absorption rate in the infrared band, and can absorb most of the infrared light in the band that affects the normal operation of the detector, thereby blocking the infrared light from being emitted from the side wall 11 of the photosensitive chip.

Referring to fig. 5, after the photosensitive chip 10 and the readout circuit 20 are flip-chip interconnected, an epoxy resin adhesive with a high infrared band absorption rate is selected, and is dispensed along the periphery of the photosensitive chip 10 by a dispenser, the epoxy resin adhesive is attached between the sidewall 11 of the photosensitive chip and the upper surface of the readout circuit 20, and is cured after the epoxy resin adhesive of the sidewall 11 of the photosensitive chip is covered, so as to form the infrared light absorption layer 30 completely covering the sidewall 11 of the photosensitive chip 10.

When infrared light shines to photosensitive chip lateral wall 11, because the epoxy glue is very high at the absorptivity of infrared band, the vast majority infrared light can be absorbed by the epoxy glue, sees through the epoxy glue and is penetrated into the infrared light in photosensitive chip 10 by photosensitive chip lateral wall 11 very weakly, can not cause apparent influence to the formation of image.

The utility model provides an infrared photoelectric detector can solve because photosensitive chip lateral wall jets into the infrared light and the inhomogeneous problem of formation of image that causes adopts the infrared light absorption layer to shelter from one, a plurality of or all lateral walls of photosensitive chip to block in the infrared light is jetted into photosensitive chip by the photosensitive chip lateral wall, promoted infrared imaging quality. The infrared photoelectric detector structure of this application is applicable in various infrared photoelectric detector, like shortwave area array infrared photoelectric detector.

It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising a … …" does not exclude the presence of another identical element in a process, method, article, or apparatus that comprises the element.

The above description is only for the specific embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present application, and shall be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims

1. The infrared photoelectric detector is characterized by comprising a photosensitive chip (10) and a readout circuit (20), wherein the photosensitive chip (10) is arranged on the readout circuit (20) and is in flip interconnection with the readout circuit (20), and an infrared light absorption layer (30) is arranged on at least one photosensitive chip side wall (11) of the photosensitive chip (10) to prevent infrared light from entering the photosensitive chip (10) from the photosensitive chip side wall (11).

2. The infrared photodetector of claim 1, wherein: the infrared light absorption layers (30) are formed on the side walls (11) of the photosensitive chips (10), and the infrared light absorption layers (30) are connected to form a closed shape surrounding the side walls (11) of the photosensitive chips.

3. The infrared photodetector of claim 1 or 2, characterized in that: the infrared light absorption layer (30) is formed by epoxy resin glue with high infrared band absorption rate.

4. The infrared photodetector of claim 3, wherein: the infrared light absorption layer (30) is formed by epoxy resin glue which is adhered between the side wall (11) of the photosensitive chip and the upper surface of the readout circuit (20) through a glue dispenser after curing.

5. The infrared photodetector of claim 1 or 2, characterized in that: the infrared light absorption layer (30) is of a sheet structure made of an infrared light absorption material and is attached to or covered on the outer side of the side wall (11) of the photosensitive chip.