CN103270610A - 具有可接达电极的固态发光装置和制造方法 - Google Patents

具有可接达电极的固态发光装置和制造方法 Download PDF

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Publication number
CN103270610A
CN103270610A CN2011800606374A CN201180060637A CN103270610A CN 103270610 A CN103270610 A CN 103270610A CN 2011800606374 A CN2011800606374 A CN 2011800606374A CN 201180060637 A CN201180060637 A CN 201180060637A CN 103270610 A CN103270610 A CN 103270610A
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CN
China
Prior art keywords
electrode
semiconductor material
passivation
light emitting
active region
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Pending
Application number
CN2011800606374A
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English (en)
Chinese (zh)
Inventor
马丁·F·舒伯特
弗拉迪米尔·奥德诺博柳多夫
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Micron Technology Inc
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Micron Technology Inc
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Publication of CN103270610A publication Critical patent/CN103270610A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07554—Controlling the environment, e.g. atmosphere composition or temperature changes in dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips

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  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Electroluminescent Light Sources (AREA)
  • Fastening Of Light Sources Or Lamp Holders (AREA)
CN2011800606374A 2010-12-16 2011-11-18 具有可接达电极的固态发光装置和制造方法 Pending CN103270610A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/970,726 US8476649B2 (en) 2010-12-16 2010-12-16 Solid state lighting devices with accessible electrodes and methods of manufacturing
US12/970,726 2010-12-16
PCT/US2011/061309 WO2012082308A1 (en) 2010-12-16 2011-11-18 Solid state lighting devices with accessible electrodes and methods of manufacturing

Publications (1)

Publication Number Publication Date
CN103270610A true CN103270610A (zh) 2013-08-28

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN2011800606374A Pending CN103270610A (zh) 2010-12-16 2011-11-18 具有可接达电极的固态发光装置和制造方法

Country Status (8)

Country Link
US (9) US8476649B2 (https=)
EP (2) EP2652804B1 (https=)
JP (1) JP2013546200A (https=)
KR (1) KR101633164B1 (https=)
CN (1) CN103270610A (https=)
SG (1) SG190968A1 (https=)
TW (1) TWI524556B (https=)
WO (1) WO2012082308A1 (https=)

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US8476649B2 (en) 2010-12-16 2013-07-02 Micron Technology, Inc. Solid state lighting devices with accessible electrodes and methods of manufacturing
KR20130097363A (ko) * 2012-02-24 2013-09-03 삼성전자주식회사 반도체 발광소자 및 그 제조방법
KR102061563B1 (ko) * 2013-08-06 2020-01-02 삼성전자주식회사 반도체 발광소자
KR102300517B1 (ko) * 2014-10-17 2021-09-13 인텔 코포레이션 마이크로led 디스플레이 및 어셈블리
US10242892B2 (en) 2014-10-17 2019-03-26 Intel Corporation Micro pick and bond assembly
DE102017107198A1 (de) * 2017-04-04 2018-10-04 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Halbleiterchip und optoelektronischer Halbleiterchip
US10622509B2 (en) * 2017-12-18 2020-04-14 Ingentec Corporation Vertical type light emitting diode die and method for fabricating the same
TWI688121B (zh) 2018-08-24 2020-03-11 隆達電子股份有限公司 發光二極體結構
CN110021691B (zh) * 2019-04-03 2020-05-01 厦门市三安光电科技有限公司 一种半导体发光器件
US11038088B2 (en) 2019-10-14 2021-06-15 Lextar Electronics Corporation Light emitting diode package
KR102675560B1 (ko) * 2023-01-19 2024-06-14 웨이브로드 주식회사 자외선 발광 소자의 제조 방법

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US20100096652A1 (en) * 2008-10-22 2010-04-22 Samsung Electro-Mechanics Co., Ltd. Semiconductor light emitting device
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KR100721147B1 (ko) 2005-11-23 2007-05-22 삼성전기주식회사 수직구조 질화갈륨계 발광다이오드 소자
JP2008053685A (ja) 2006-08-23 2008-03-06 Samsung Electro Mech Co Ltd 垂直構造窒化ガリウム系発光ダイオード素子及びその製造方法
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JP2003243708A (ja) * 2002-02-15 2003-08-29 Matsushita Electric Works Ltd 半導体発光素子
WO2008131735A1 (de) * 2007-04-26 2008-11-06 Osram Opto Semiconductors Gmbh Optoelektronischer halbleiterkörper und verfahren zur herstellung eines solchen
CN201252111Y (zh) * 2008-09-11 2009-06-03 杭州士兰明芯科技有限公司 一种发光二极管
US20100096652A1 (en) * 2008-10-22 2010-04-22 Samsung Electro-Mechanics Co., Ltd. Semiconductor light emitting device
CN101771125A (zh) * 2008-12-29 2010-07-07 Lg伊诺特有限公司 半导体发光器件及具有该半导体发光器件的发光器件封装

Also Published As

Publication number Publication date
EP3654390A1 (en) 2020-05-20
EP2652804A1 (en) 2013-10-23
US10896995B2 (en) 2021-01-19
TW201230399A (en) 2012-07-16
US11721790B2 (en) 2023-08-08
US20150144986A1 (en) 2015-05-28
US9985183B2 (en) 2018-05-29
US20130285107A1 (en) 2013-10-31
WO2012082308A1 (en) 2012-06-21
US20190237625A1 (en) 2019-08-01
JP2013546200A (ja) 2013-12-26
KR101633164B1 (ko) 2016-06-23
US20230352630A1 (en) 2023-11-02
US10256369B2 (en) 2019-04-09
US8476649B2 (en) 2013-07-02
US9444014B2 (en) 2016-09-13
TWI524556B (zh) 2016-03-01
EP2652804A4 (en) 2015-11-18
US12142708B2 (en) 2024-11-12
US20250072170A1 (en) 2025-02-27
US20210135055A1 (en) 2021-05-06
US20180248079A1 (en) 2018-08-30
US20120153304A1 (en) 2012-06-21
EP2652804B1 (en) 2020-01-08
US9000456B2 (en) 2015-04-07
KR20130097802A (ko) 2013-09-03
EP3654390B1 (en) 2023-04-19
SG190968A1 (en) 2013-07-31
US20160380156A1 (en) 2016-12-29

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