CN103267579A - Detection circuit of line control circuit of infrared focal plane reading circuit - Google Patents
Detection circuit of line control circuit of infrared focal plane reading circuit Download PDFInfo
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- CN103267579A CN103267579A CN2013101523628A CN201310152362A CN103267579A CN 103267579 A CN103267579 A CN 103267579A CN 2013101523628 A CN2013101523628 A CN 2013101523628A CN 201310152362 A CN201310152362 A CN 201310152362A CN 103267579 A CN103267579 A CN 103267579A
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Abstract
The invention discloses a detection circuit of a line control circuit of an infrared focal plane reading circuit. The detection circuit comprises a unit gain operation amplifier and a testing circuit. The unit gain operation amplifier comprises an inverted input end, a first in-phase input end, a second in-phase input end and an output end, wherein the first in-phase input end is connected with a detecting circuit of the infrared focal plane reading circuit. The testing circuit is connected with the second in-phase input end of the unit gain operation amplifier. The detection circuit can detect the reading circuit before sensitive picture elements are made through infrared focal plane arrays, unqualified circuits are screened out, and manufacturing cost of the infrared focal plane arrays is saved. When normal work is carried out after the sensitive picture elements are made, the fact that the second in-phase input end does not affect normal work of the unit gain operation amplifier can be guaranteed, and performance attenuation cannot be caused.
Description
Technical field
The present invention relates to the sensing circuit of infrared focal plane array seeker, relate in particular to a kind of testing circuit of line control circuit of infrared focal plane read-out circuit.
Background technology
Infrared imaging system is just obtaining increasingly extensive application in military affairs, space technology, medical science and national economy association area at present.The infrared focal plane array assembly is the core light electrical part that obtains infrared image signal in the infrared imagery technique.The infrared focal plane array assembly is made up of infrared eye and infrared focal plane read-out circuit (ROIC:readout integrated circuits).Along with the continuous expansion of infrared focal plane array assembly scale, need satisfy higher serviceability as the infrared focal plane read-out circuit of its important component part.
The ROIC circuit is that the various functions of infrared focus plane are integrated in highly integrated circuit in the single semi-conductor chip, its basic function is to carry out the conversion of infrared eye signal, amplification and transmission, is about to data and is transferred to output terminal successively from many infrared eye ends.Common ROIC circuit comprises that element circuit, row are read level and output buffer stage, timing sequence generating circuit, row are selected circuit and column select circuit.It is the important component part of ROIC circuit that row is selected circuit, and its performance quality is the performance of the whole sensing circuit of influence directly.
After infrared reading circuit completed, before the infrared-sensitive cell array was made, it was necessary that infrared reading circuit is detected, and can improve the yield rate of infrared eye like this, saved cost and time.
Before the infrared-sensitive cell array was made, the digital circuit of infrared reading circuit can select corresponding signal input to detect by test signal control.But the mimic channel of infrared focal plane array sensing circuit but was difficult to detect before the infrared-sensitive cell array is made, because circuit is imperfect, was output as random signal.
Summary of the invention
One of purpose of the present invention provides a kind of testing circuit of line control circuit of the infrared focal plane read-out circuit that can detect the infrared focal plane array sensing circuit.
The disclosed technical scheme of the embodiment of the invention comprises:
A kind of testing circuit of line control circuit of infrared focal plane read-out circuit is provided, it is characterized in that, comprise: unity gain operational amplifier 10, described unity gain operational amplifier 10 comprises inverting input, first in-phase input end, second in-phase input end and output terminal, described inverting input is connected to described output terminal, and described first in-phase input end is connected to the detection circuit of described infrared focal plane read-out circuit; Test circuit 20, described test circuit 20 is connected to second in-phase input end of described unity gain operational amplifier 10.
Further, described unity gain operational amplifier comprises the first transistor M1, transistor seconds M2, the 3rd transistor M3, the 4th transistor M4, the 5th transistor M5 and the 6th transistor M6, wherein: the grid of described the first transistor M1 is connected to described first in-phase input end, drain electrode is connected to the drain electrode of described the 4th transistor M4, and source electrode is connected to the drain electrode of described the 6th transistor M6; The grid of described transistor seconds M2 is connected to described inverting input, and drain electrode is connected to the drain electrode of described the 5th transistor M5, and source electrode is connected to the drain electrode of described the 6th transistor M6; The grid of described the 3rd transistor M3 is connected to described second in-phase input end, and drain electrode is connected to the drain electrode of described the 4th transistor M4, and source electrode is connected to the drain electrode of described the 6th transistor M6; The source electrode of described the 4th transistor M4 is connected to system power supply, and grid is connected to the grid of described the 5th transistor M5 and is connected to the drain electrode of described the 4th transistor M4; The source electrode of described the 5th transistor M5 is connected to system power supply, and drain electrode is connected to described output terminal; The source ground of described the 6th transistor M6, grid are connected to electric current port (Vnbias).
Further, also comprise integrating circuit 30 and sampling hold circuit 40, described integrating circuit 30 is connected to the output terminal of described unity gain operational amplifier 10, and described sampling hold circuit 40 is connected to the output terminal of described integrating circuit 30.
In the embodiments of the invention, testing circuit can detect sensing circuit before infrared focal plane array is made responsive pixel, filtered out underproof circuit, saved the cost of manufacture of infrared focal plane array.After making responsive pixel, during operate as normal, can guarantee that again test input (being second in-phase input end of unity gain operational amplifier) does not influence the operate as normal of unity gain operational amplifier, namely can not bring the decay on the performance.
Description of drawings
Fig. 1 is the synoptic diagram of testing circuit of line control circuit of the infrared focal plane read-out circuit of one embodiment of the invention.
Fig. 2 is the structural representation of the unity gain operational amplifier of one embodiment of the invention.
Fig. 3 is the signal flow diagram of testing circuit when test of one embodiment of the invention.
Fig. 4 is the signal flow diagram of testing circuit when operate as normal of one embodiment of the invention.
Embodiment
Describe embodiments of the invention below with reference to the accompanying drawings in detail.
Fig. 1 is the structural representation of testing circuit of line control circuit of the infrared focal plane read-out circuit of one embodiment of the invention.
As shown in Figure 1, in one embodiment of the present of invention, a kind of testing circuit of line control circuit of infrared focal plane read-out circuit comprises unity gain operational amplifier 10.This unity gain operational amplifier 10 comprises inverting input inn, the first in-phase input end inp, second in-phase input end inp_ts and the output terminal, and wherein inverting input inn is connected to output terminal, constitutes negative feedback.
In the embodiments of the invention, the first in-phase input end inp comes from the input port of the signal of infrared focal plane array during as infrared focal plane array sensing circuit operate as normal, therefore this first in-phase input end inp is connected to detection circuit 100, surveys the normal signal of acquisition from infrared focal plane array when this detection circuit 100 is used for operate as normal.Detection circuit 100 can use detection circuit structure commonly used in this area, is not described in detail in this.And, be appreciated that detection circuit 100 does not belong to the part of testing circuit of the present invention.
In the embodiments of the invention, testing circuit also comprises test circuit 20, and this test circuit 20 is connected to the second in-phase input end inp_ts of unity gain operational amplifier 10.Test circuit 20 can the acceptance test signal.In the manufacture process of infrared focal plane array, before making infrared sensor, use this test circuit 20 acceptance test signals, test signal detects circuit from second in-phase input end inp_ts input unity gain operational amplifier 10.In the embodiments of the invention, test circuit 20 can be circuit that can the acceptance test signal commonly used in this area, and its structure is not described in detail in this.
As shown in Figure 1, in the embodiments of the invention, can also comprise integrating circuit 30 and sampling hold circuit 40.Integrating circuit 30 is connected to the output terminal of unity gain operational amplifier 10, and sampling hold circuit 40 is connected to the output terminal of integrating circuit 30.Like this, signal is after the output terminal output of unity gain operational amplifier 10, through integrating circuit 30 and sampling hold circuit 40 back outputs.
Fig. 2 is the structural representation of the unity gain operational amplifier 10 of one embodiment of the invention.
As shown in Figure 2, unity gain operational amplifier 10 comprises the first transistor M1, transistor seconds M2, the 3rd transistor M3, the 4th transistor M4, the 5th transistor M5 and the 6th transistor M6.
The grid of the first transistor M1 is connected to the first in-phase input end inp, and drain electrode is connected to the drain electrode of the 4th transistor M4, and source electrode is connected to the drain electrode of the 6th transistor M6.
The grid of transistor seconds M2 is connected to inverting input inn, and drain electrode is connected to the drain electrode of the 5th transistor M5, and source electrode is connected to the drain electrode of the 6th transistor M6.
The grid of the 3rd transistor M3 is connected to the second in-phase input end inp_ts, and drain electrode is connected to the drain electrode of the 4th transistor M4, and source electrode is connected to the drain electrode of the 6th transistor M6.
The source electrode of the 4th transistor M4 is connected to system power supply V
Dd, grid is connected to the grid of the 5th transistor M5 and is connected to the drain electrode of the 4th transistor M4.
The source electrode of the 5th transistor M5 is connected to system power supply V
Dd, drain electrode is connected to output terminal out.
The source ground of the 6th transistor M6, grid is connected to Vnbias.
Fig. 3 is the synoptic diagram of the signal stream of testing circuit when test of one embodiment of the invention, and Fig. 4 is the synoptic diagram of the signal stream of testing circuit when operate as normal of one embodiment of the invention.
As shown in Figure 3, during testing circuit, test circuit 20 changes the output of unity gain operational amplifier 10 by the second in-phase input end inp_ts input test signal, thereby influences the output of sensing circuit, with testing circuit before making responsive pixel.Signal flows through test circuit 20, unity gain operational amplifier 10, integrating circuit 30 and sampling hold circuit 40 successively, final output.
As shown in Figure 4, during operate as normal, test circuit 20 can guarantee that the second in-phase input end inp_ts does not influence unity gain operational amplifier 10 operate as normal after responsive pixel manufacturing is finished.Signal flows through detection circuit 100, unity gain operational amplifier 10, integrating circuit 30 and sampling hold circuit 40 successively, final output.
In the embodiment of Fig. 2, when test, test circuit makes the voltage V of second in-phase input end
Inp_tsKeep certain noble potential (as: V
Inp_tsV
P+ V
T), guarantee the 3rd transistor M3 conducting, thereby satisfy signal stream shown in Figure 3.V wherein
PBe the voltage at Fig. 2 mid point P place, V
TIt is the 3rd transistorized threshold voltage.
When operate as normal, test circuit makes V
Inp_tsKeep certain electronegative potential (as: V
Inp_ts＜V
P+ V
T), guarantee that the 3rd transistor M3 closes, thereby satisfy signal stream shown in Figure 4.
When the structural change of unity gain operational amplifier 10, test circuit is for V
Inp_tsControl also should corresponding change.
In the embodiments of the invention, test circuit can be directly to accept external analog level, also can be to receive external digital signal to produce required analog level by inner digital to analog converter (DAC), or other any circuit that satisfies the demands.
In the embodiments of the invention, testing circuit can detect sensing circuit before infrared focal plane array is made responsive pixel, filtered out underproof circuit, saved the cost of manufacture of infrared focal plane array.After making responsive pixel, during operate as normal, can guarantee that again test input (being second in-phase input end of unity gain operational amplifier) does not influence the operate as normal of unity gain operational amplifier, namely can not bring the decay on the performance.
More than describe the present invention by specific embodiment, but the present invention is not limited to these specific embodiments.It will be understood by those skilled in the art that and to make various modifications to the present invention, be equal to replacement, change etc. that these conversion all should be within protection scope of the present invention as long as do not deviate from spirit of the present invention.In addition, the different embodiment of above many places described " embodiment " expression can certainly be with its all or part of combination in one embodiment.
Claims (3)
1. the testing circuit of the line control circuit of an infrared focal plane read-out circuit is characterized in that, comprising:
Unity gain operational amplifier (10), described unity gain operational amplifier (10) comprises inverting input, first in-phase input end, second in-phase input end and output terminal, described inverting input is connected to described output terminal, and described first in-phase input end is connected to the detection circuit of described infrared focal plane read-out circuit;
Test circuit (20), described test circuit (20) is connected to second in-phase input end of described unity gain operational amplifier (10).
2. testing circuit as claimed in claim 1, it is characterized in that, described unity gain operational amplifier (10) comprises the first transistor (M1), transistor seconds (M2), the 3rd transistor (M3), the 4th transistor (M4), the 5th transistor (M5) and the 6th transistor (M6), wherein:
The grid of described the first transistor (M1) is described first in-phase input end, and drain electrode is connected to the drain electrode of described the 4th transistor (M4), and source electrode is connected to the drain electrode of described the 6th transistor (M6);
The grid of described transistor seconds (M2) is described inverting input, and drain electrode is connected to the drain electrode of described the 5th transistor (M5), and source electrode is connected to the drain electrode of described the 6th transistor (M6);
The grid of described the 3rd transistor (M3) is described second in-phase input end, and drain electrode is connected to the drain electrode of described the 4th transistor (M4), and source electrode is connected to the drain electrode of described the 6th transistor (M6);
The source electrode of described the 4th transistor (M4) is connected to system power supply, and grid is connected to the grid of described the 5th transistor (M5) and is connected to the drain electrode of described the 4th transistor (M4);
The source electrode of described the 5th transistor (M5) is connected to system power supply, drains to be described output terminal;
The source ground of described the 6th transistor (M6), grid are connected to electric current port (Vnbias).
3. as claim 1 or 2 described testing circuits, it is characterized in that: also comprise integrating circuit (30) and sampling hold circuit (40), described integrating circuit (30) is connected to the output terminal of described unity gain operational amplifier (10), and described sampling hold circuit (40) is connected to the output terminal of described integrating circuit (30).
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| Application Number | Priority Date | Filing Date | Title |
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| CN2013101523628A CN103267579A (en) | 2013-04-27 | 2013-04-27 | Detection circuit of line control circuit of infrared focal plane reading circuit |
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| CN2013101523628A CN103267579A (en) | 2013-04-27 | 2013-04-27 | Detection circuit of line control circuit of infrared focal plane reading circuit |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103439645A (en) * | 2013-09-05 | 2013-12-11 | 中国电子科技集团公司第四十四研究所 | CTIA-type CMOS focal plane reading circuit and testing method |
| CN103529382A (en) * | 2013-09-24 | 2014-01-22 | 电子科技大学 | Circuit and method for detecting line control circuit of infrared focal plane array read-out circuit |
| CN103776544A (en) * | 2014-01-09 | 2014-05-07 | 电子科技大学 | Readout circuit of uncooled infrared focal plane array |
| CN104897290A (en) * | 2014-03-04 | 2015-09-09 | 中航（重庆）微电子有限公司 | Pixel equivalent circuit and testing method for focal plane array infrared detector |
| JP2019115008A (en) * | 2017-12-26 | 2019-07-11 | アズビル株式会社 | Input circuit |
| CN113324661A (en) * | 2021-05-18 | 2021-08-31 | 昆明物理研究所 | Built-in test circuit and test method for infrared focal plane detector reading circuit |
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| CN101358880A (en) * | 2008-09-08 | 2009-02-04 | 北京大学 | Infrared focal plane read-out circuit and output stage structure thereof |
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| CN102818637A (en) * | 2012-08-03 | 2012-12-12 | 中国科学院上海技术物理研究所 | CTIA (Capacitive Transimpedance Amplifier) structure input stage applicable to readout circuit of IRFPA (Infrared Focus Plane Arrray) |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103439645A (en) * | 2013-09-05 | 2013-12-11 | 中国电子科技集团公司第四十四研究所 | CTIA-type CMOS focal plane reading circuit and testing method |
| CN103439645B (en) * | 2013-09-05 | 2016-03-23 | 中国电子科技集团公司第四十四研究所 | CTIA type CMOS circuit of focal plane readout and method of testing |
| CN103529382A (en) * | 2013-09-24 | 2014-01-22 | 电子科技大学 | Circuit and method for detecting line control circuit of infrared focal plane array read-out circuit |
| CN103529382B (en) * | 2013-09-24 | 2017-02-15 | 电子科技大学 | Circuit and method for detecting line control circuit of infrared focal plane array read-out circuit |
| CN103776544A (en) * | 2014-01-09 | 2014-05-07 | 电子科技大学 | Readout circuit of uncooled infrared focal plane array |
| CN103776544B (en) * | 2014-01-09 | 2016-07-27 | 电子科技大学 | A kind of reading circuit of un-cooled infrared focal plane array |
| CN104897290A (en) * | 2014-03-04 | 2015-09-09 | 中航（重庆）微电子有限公司 | Pixel equivalent circuit and testing method for focal plane array infrared detector |
| CN104897290B (en) * | 2014-03-04 | 2018-07-24 | 中航（重庆）微电子有限公司 | A kind of the pixel equivalent circuit and test method of face formation infrared detector |
| JP2019115008A (en) * | 2017-12-26 | 2019-07-11 | アズビル株式会社 | Input circuit |
| CN113324661A (en) * | 2021-05-18 | 2021-08-31 | 昆明物理研究所 | Built-in test circuit and test method for infrared focal plane detector reading circuit |
| CN113324661B (en) * | 2021-05-18 | 2022-09-16 | 昆明物理研究所 | Built-in test circuit and test method for infrared focal plane detector reading circuit |
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Application publication date: 20130828 |