CN104897290A - Pixel equivalent circuit and testing method for focal plane array infrared detector - Google Patents
Pixel equivalent circuit and testing method for focal plane array infrared detector Download PDFInfo
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- CN104897290A CN104897290A CN201410076965.9A CN201410076965A CN104897290A CN 104897290 A CN104897290 A CN 104897290A CN 201410076965 A CN201410076965 A CN 201410076965A CN 104897290 A CN104897290 A CN 104897290A
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Abstract
The invention provides a pixel equivalent circuit and a testing method for a focal plane array (FPA) infrared detector. The pixel equivalent circuit comprises an equivalent blind pixel, an equivalent effective pixel, and a reading circuit. The equivalent blind pixel is used for simulating a MEMS blind pixel and providing an equivalent contrast signal. The equivalent effective pixel is used for simulating a MEMS effective pixel and providing an equivalent detecting signal. The reading circuit is used for amplifying and reading the equivalent contrast signal and the equivalent detecting signal. The equivalent blind pixel comprises a first MOS transistor and a first switch. The equivalent effective pixel comprises a second MOS transistor and a second switch. The pixel equivalent circuit and THE testing method have following beneficial effects of (1) obviously improving the production efficiency and product yield of the FPA infrared detector; (2) achieving full function testing on unmanufactured MEMS structure in the surface-array infrared detector; and (3) reducing the testing packaging cost of the FPA infrared detector.
Description
Technical field
The invention belongs to MEMS and integrated circuit (IC) design field, particularly relate to pixel equivalent electrical circuit and the method for testing of a kind of formation infrared eye.
Background technology
Infrared eye (Infrared Detector) is the device infrared radiation signal of incidence being transformed into electric signal output.Infrared radiation is the electromagnetic wave of wavelength between visible ray and microwave, human eye discover less than.Discover the existence of this radiation and measure its power, it must be transformed into other physical quantitys that can discover and measure.In general, any effect caused by illuminated with infrared radiation object, as long as effect can be measured and enough sensitive, all can be used to the power of measuring infrared radiation.The mainly thermo-effect of infrared radiation that modern infrared eye utilizes and photoelectric effect.The output of these effects is mostly electricity, or available suitable method is transformed into electricity.
Infrared focal plane array is beginning of the eighties late 1970s, grows up under the promotion that national defense applications and other strategy and tactics are applied.It is the important photoelectric device obtaining scenery infrared emanation information.Infrared focal plane array belongs to second generation infrared imaging device, is the core component of modern infrared imaging system, has that structure is simple, working stability, noise equivalent temperature difference are little, sensitivity advantages of higher.Therefore, infrared focal plane array is widely used in the every field such as military affairs, industry, agricultural, medical treatment, forest fire protection.
The pixel area of face formation infrared eye is comparatively large, and account for the chip area of majority, the quality of pixel quality determines the display effect of subsequent figures picture.After pixel accepts external information, its faint current signal through sensing circuit process, will become detectable voltage signal.
Non-refrigerating infrared focal plane sensing circuit (ROIC) is the integrated treatment circuit of a kind of special digital-to-analogue mixed signal; along with the development of integrated circuit technology and technology; especially the maturation of CMOS Integrated-manufacturing Techniques and technique, makes ROIC obtain swift and violent development.Pixel is the requisite part of face formation infrared eye, and the size of pixel and structure are the key factors affecting image quality below.At present, common method is all first carry out sensing circuit, then grows MEMS pixel (i.e. VOx film) above, but in early stage circuit design, the performance of sensing circuit is unpredictable.
In prior art, the test of sensing circuit is carried out often after MEMS pixel completes and encapsulates, but, if find after MEMS pixel completes that sensing circuit goes wrong again, serious loss can be caused to production, comprise the reduction of the cost of manufacture of MEMS pixel and the waste of packaging cost and production efficiency.
In view of above the problems of the prior art, a kind of circuit of testing sensing circuit before MEMS pixel makes and method of testing is provided to be necessary.
Summary of the invention
The shortcoming of prior art in view of the above, the object of the present invention is to provide pixel equivalent electrical circuit and the method for testing of a kind of formation infrared eye, for solving in prior art, because of MEMS pixel, to form formation infrared eye sensing circuit performance above unpredictable and cause the problem that cost of manufacture and packaging cost improve.
For achieving the above object and other relevant objects, the invention provides the pixel equivalent electrical circuit of a kind of formation infrared eye, at least comprise:
The blind pixel of equivalence, for the blind pixel of analog MEMS, provides equivalent control signal;
Equivalence is pixel effectively, for the effective pixel of analog MEMS, provides equivalent detectable signal;
Sensing circuit, for amplifying described equivalent control signal and equivalent detectable signal and read;
The blind pixel of described equivalence comprises the first metal-oxide-semiconductor and the first switch, and wherein, the grid of described first metal-oxide-semiconductor connects the first adjustable voltage, and the first pole connects power supply, between the second pole that described first switch is connected to described first metal-oxide-semiconductor and described sensing circuit;
The effective pixel of described equivalence comprises the second metal-oxide-semiconductor and second switch, and wherein, the grid of described second metal-oxide-semiconductor connects the second adjustable voltage, the second pole ground connection, between the first pole that described second switch is connected to described second metal-oxide-semiconductor and described sensing circuit.
As a kind of preferred version of the pixel equivalent electrical circuit of of the present invention formation infrared eye, wherein, by regulating described first adjustable voltage to regulate the resistance of described first metal-oxide-semiconductor, the blind pixel of described equivalence is realized to the simulation of the blind pixel of MEMS; By regulating described second adjustable voltage to regulate the resistance of described second metal-oxide-semiconductor, realize the effective pixel of described equivalence to the simulation of the effective pixel of MEMS.
As a kind of preferred version of the pixel equivalent electrical circuit of of the present invention formation infrared eye, be connected with described sensing circuit as the common output end of the blind pixel of described equivalence and the effective pixel of equivalence after described first switch is connected with second switch.
As a kind of preferred version of the pixel equivalent electrical circuit of of the present invention formation infrared eye, described first switch is the first switch MOS pipe, and described first switch MOS pipe realizes its conducting or shutoff by the first gating signal; Described second switch is second switch metal-oxide-semiconductor, and described second switch metal-oxide-semiconductor realizes its conducting or shutoff by the second gating signal.
The present invention also provides a kind of pixel equivalent electrical circuit of described formation infrared eye that utilizes to the method for testing of sensing circuit, comprises step:
1) the blind pixel of described equivalence is realized to the simulation of the blind pixel of MEMS, output equivalent control signal by controlling described first adjustable voltage; Meanwhile, the effective pixel of described equivalence is realized to the simulation of the effective pixel of MEMS, output equivalent detectable signal by controlling described second adjustable voltage;
2) integration is carried out to described equivalent control signal machine equivalence detectable signal and form integration current, and export this integration current to described sensing circuit;
3) based on described integration current, reading test is carried out to described sensing circuit, to determine whether the performance of corresponding sensing circuit reaches standard.
As a kind of preferred version of pixel equivalent electrical circuit to the method for testing of sensing circuit utilizing face formation infrared eye of the present invention, before described method of testing is carried out at the blind pixel of MEMS and the effective pixel formation of MEMS.
As a kind of preferred version of pixel equivalent electrical circuit to the method for testing of sensing circuit utilizing face formation infrared eye of the present invention, wherein, minimum output valve when being set as that the blind pixel of MEMS works based on the value of the equivalent control signal of described first adjustable voltage and between maximum output valve; Minimum output valve when being set as that the effective pixel of MEMS works based on the value of the equivalent detectable signal of described second adjustable voltage and between maximum output valve.
The present invention also provides a kind of face formation infrared eye, comprising:
MEMS pixel array, comprises the MEMS pixel of multiple rectangular arrayed, for the current signal of the change exporting change according to temperature;
The blind pixel of multiple equivalence, the blind pixel of each equivalence arranges corresponding setting with each MEMS of arranging pixel, for the blind pixel of analog MEMS, provides equivalent control signal; Wherein, the blind pixel of described equivalence comprises the first metal-oxide-semiconductor and the first switch, and the grid of described first metal-oxide-semiconductor connects the first adjustable voltage, and the first pole connects power supply, between the second pole that described first switch is connected to described first metal-oxide-semiconductor and sensing circuit array;
The effective pixel of multiple equivalence, the effective pixel of each equivalence arranges corresponding setting with each MEMS of arranging pixel, for the effective pixel of analog MEMS, provides equivalent detectable signal; Wherein, the effective pixel of described equivalence comprises the second metal-oxide-semiconductor and second switch, and the grid of described second metal-oxide-semiconductor connects the second adjustable voltage, the second pole ground connection, between the first pole that described second switch is connected to described second metal-oxide-semiconductor and sensing circuit array;
Sensing circuit array, for amplifying current signal, the equivalent control signal of respectively this equivalent blind pixel output and the equivalent detectable signal of the respectively effective pixel output of this equivalence that respectively this MEMS pixel exports and read.
As a kind of preferred version of of the present invention formation infrared eye, the blind pixel of described equivalence and the effective pixel of described equivalence are arranged at the both sides up and down of each row MEMS pixel respectively.
As mentioned above, the invention provides pixel equivalent electrical circuit and the method for testing of a kind of formation infrared eye, described pixel equivalent electrical circuit comprises: equivalent blind pixel, for the blind pixel of analog MEMS, provides equivalent control signal; Equivalence is pixel effectively, for the effective pixel of analog MEMS, provides equivalent detectable signal; Sensing circuit, for amplifying described equivalent control signal and equivalent detectable signal and read; The blind pixel of described equivalence comprises the first metal-oxide-semiconductor and the first switch, and wherein, the grid of described first metal-oxide-semiconductor connects the first adjustable voltage, and the first pole connects power supply, between the second pole that described first switch is connected to described first metal-oxide-semiconductor and described sensing circuit; The effective pixel of described equivalence comprises the second metal-oxide-semiconductor and second switch, and wherein, the grid of described second metal-oxide-semiconductor connects the second adjustable voltage, the second pole ground connection, between the first pole that described second switch is connected to described second metal-oxide-semiconductor and described sensing circuit.The present invention has following beneficial effect: production efficiency and the product yield that can significantly improve face formation infrared eye; 2) the global function test in the formation infrared eye of face before MEMS structure manufacture is achieved; 3) the test package cost of face formation infrared eye product is reduced.
Accompanying drawing explanation
Fig. 1 is shown as the structural representation of the pixel equivalent electrical circuit of of the present invention formation infrared eye.
Fig. 2 is shown as the steps flow chart schematic diagram of pixel equivalent electrical circuit to the method for testing of sensing circuit utilizing described formation infrared eye of the present invention.
Fig. 3 is shown as the structural representation of of the present invention formation infrared eye.
Element numbers explanation
10 equivalent blind pixels
20 equivalences effectively pixel
30 sensing circuits
Mbeqv first metal-oxide-semiconductor
M1 first switch
Maeqv second metal-oxide-semiconductor
M2 second switch
S11 ~ S13 step 1) ~ step 3)
Embodiment
Below by way of specific instantiation, embodiments of the present invention are described, those skilled in the art the content disclosed by this instructions can understand other advantages of the present invention and effect easily.The present invention can also be implemented or be applied by embodiments different in addition, and the every details in this instructions also can based on different viewpoints and application, carries out various modification or change not deviating under spirit of the present invention.
Refer to Fig. 1 ~ Fig. 3.It should be noted that, the diagram provided in the present embodiment only illustrates basic conception of the present invention in a schematic way, then only the assembly relevant with the present invention is shown in graphic but not component count, shape and size when implementing according to reality is drawn, it is actual when implementing, and the kenel of each assembly, quantity and ratio can be a kind of change arbitrarily, and its assembly layout kenel also may be more complicated.
As shown in Figure 1, the present embodiment provides the pixel equivalent electrical circuit of a kind of formation infrared eye, at least comprises:
The blind pixel 10 of equivalence, for the blind pixel of analog MEMS, provides equivalent control signal;
Equivalence is pixel 20 effectively, for the effective pixel of analog MEMS, provides equivalent detectable signal;
Sensing circuit 30, for amplifying described equivalent control signal and equivalent detectable signal and read;
The blind pixel 10 of described equivalence comprises the first metal-oxide-semiconductor Mbeqv and the first switch M1, wherein, the grid of described first metal-oxide-semiconductor Mbeqv connects the first adjustable voltage VBEQV, first pole connects power supply VSK, between the second pole that described first switch M1 is connected to described first metal-oxide-semiconductor Mbeqv and described sensing circuit 30;
The effective pixel 20 of described equivalence comprises the second metal-oxide-semiconductor Maeqv and second switch M2, wherein, the grid of described second metal-oxide-semiconductor Maeqv connects the second adjustable voltage VAEQV, between the first pole that second pole ground connection VDET, described second switch M2 are connected to described second metal-oxide-semiconductor Maeqv and described sensing circuit 30.
Exemplarily, by regulating described first adjustable voltage to regulate the resistance of described first metal-oxide-semiconductor Mbeqv, the simulation of the blind pixel of described equivalence 10 pairs of blind pixels of MEMS is realized; By regulating described second adjustable voltage to regulate the resistance of described second metal-oxide-semiconductor Maeqv, realize the simulation of the effective pixel of described equivalence 20 pairs of effective pixels of MEMS.
Exemplarily, described first switch M1 is connected with described sensing circuit 30 as the common output end of the effective pixel 20 of the blind pixel of described equivalence 10 and equivalence after being connected with second switch M2.
Exemplarily, described first switch M1 is the first switch MOS pipe, and described first switch MOS pipe realizes its conducting or shutoff by the first gating signal; Described second switch M2 is second switch metal-oxide-semiconductor, and described second switch metal-oxide-semiconductor realizes its conducting or shutoff by the second gating signal.In the present embodiment, described first switch MOS pipe and second switch metal-oxide-semiconductor are all designed to NMOS tube.
It should be noted that, after the pixel equivalent electrical circuit of the face formation infrared eye of the present embodiment completes, MEMS pixel is not also formed, and is reserved with MEMS pixel region to be formed.
Particularly, when the pixel equivalent electrical circuit of the face formation infrared eye of the present embodiment works, described power supply high input voltage, first gating signal and the second gating signal input high level make described first switch MOS pipe and the conducting of second switch metal-oxide-semiconductor, described first adjustable signal is according to actual testing requirement input voltage, produce equivalent control signal, described second adjustable signal is according to actual testing requirement input voltage, produce equivalent detectable signal, the rear integration current that formed of node superposition that described equivalent control signal and equivalent detectable signal are connected from two switches exports described sensing circuit 30 to, just can test the properties of described sensing circuit 30, judge whether this sensing circuit 30 reaches standard according to test result, to get rid of defect ware, improve product yield, save packaging cost.
As shown in Figure 2, the present embodiment also provides a kind of pixel equivalent electrical circuit of described formation infrared eye that utilizes to the method for testing of sensing circuit 30, comprises step:
First carrying out step 1) S11, realizing the simulation of the blind pixel of described equivalence 10 pairs of blind pixels of MEMS by controlling described first adjustable voltage, output equivalent control signal; Meanwhile, the simulation of the effective pixel of described equivalence 20 pairs of effective pixels of MEMS is realized by controlling described second adjustable voltage, output equivalent detectable signal;
Then carry out step 2) S12, carries out integration to described equivalent control signal machine equivalence detectable signal and forms integration current, and export this integration current to described sensing circuit 30;
Finally carry out step 3) S13, based on described integration current, reading test is carried out to described sensing circuit 30, to determine whether the performance of corresponding sensing circuit 30 reaches standard.
In the present embodiment, before described method of testing is carried out at the blind pixel of MEMS and the effective pixel formation of MEMS.
In the present embodiment, minimum output valve when being set as that the blind pixel of MEMS works based on the value of the equivalent control signal of described first adjustable voltage and between maximum output valve; Minimum output valve when being set as that the effective pixel of MEMS works based on the value of the equivalent detectable signal of described second adjustable voltage and between maximum output valve.
As shown in Figure 3, the present embodiment also provides a kind of face formation infrared eye, comprising:
MEMS pixel array, comprises the MEMS pixel of multiple rectangular arrayed, for the current signal of the change exporting change according to temperature;
The blind pixel 10 of multiple equivalence, the blind pixel of each equivalence 10 arranges corresponding setting with each MEMS of arranging pixel, for the blind pixel of analog MEMS, provides equivalent control signal; Wherein, the blind pixel 10 of described equivalence comprises the first metal-oxide-semiconductor Mbeqv and the first switch M1, the grid of described first metal-oxide-semiconductor Mbeqv connects the first adjustable voltage, and the first pole connects power supply, between the second pole that described first switch M1 is connected to described first metal-oxide-semiconductor Mbeqv and sensing circuit array;
The effective pixel 20 of multiple equivalence, the effective pixel of each equivalence 20 arranges corresponding setting with each MEMS of arranging pixel, for the effective pixel of analog MEMS, provides equivalent detectable signal; Wherein, the effective pixel 20 of described equivalence comprises the second metal-oxide-semiconductor Maeqv and second switch M2, the grid of described second metal-oxide-semiconductor Maeqv connects the second adjustable voltage, the second pole ground connection, between the first pole that described second switch M2 is connected to described second metal-oxide-semiconductor Maeqv and sensing circuit array;
Sensing circuit array, for amplifying current signal, the equivalent control signal of respectively this equivalent blind pixel 10 output and the equivalent detectable signal of respectively effective pixel 20 output of this equivalence that respectively this MEMS pixel exports and read.
Exemplarily, the blind pixel of described equivalence 10 and the effective pixel of described equivalence 20 are arranged at the both sides up and down of each row MEMS pixel respectively.
Exemplarily, each row MEMS pixel, the blind pixel of equivalence 10 of respective column and the effective pixel of equivalence 20 of respective column are connected to described sensing circuit array by same bit line.
As mentioned above, the invention provides pixel equivalent electrical circuit and the method for testing of a kind of formation infrared eye, described pixel equivalent electrical circuit comprises: equivalent blind pixel 10, for the blind pixel of analog MEMS, provides equivalent control signal; Equivalence is pixel 20 effectively, for the effective pixel of analog MEMS, provides equivalent detectable signal; Sensing circuit 30, for amplifying described equivalent control signal and equivalent detectable signal and read; The blind pixel 10 of described equivalence comprises the first metal-oxide-semiconductor Mbeqv and the first switch M1, wherein, the grid of described first metal-oxide-semiconductor Mbeqv connects the first adjustable voltage, and the first pole connects power supply, between the second pole that described first switch M1 is connected to described first metal-oxide-semiconductor Mbeqv and described sensing circuit 30; The effective pixel 20 of described equivalence comprises the second metal-oxide-semiconductor Maeqv and second switch M2, wherein, the grid of described second metal-oxide-semiconductor Maeqv connects the second adjustable voltage, the second pole ground connection, between the first pole that described second switch M2 is connected to described second metal-oxide-semiconductor Maeqv and described sensing circuit 30.The present invention has following beneficial effect: production efficiency and the product yield that can significantly improve face formation infrared eye; 2) the global function test in the formation infrared eye of face before MEMS structure manufacture is achieved; 3) the test package cost of face formation infrared eye product is reduced.So the present invention effectively overcomes various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all without prejudice under spirit of the present invention and category, can modify above-described embodiment or changes.Therefore, such as have in art usually know the knowledgeable do not depart from complete under disclosed spirit and technological thought all equivalence modify or change, must be contained by claim of the present invention.
Claims (9)
1. a pixel equivalent electrical circuit for face formation infrared eye, is characterized in that, at least comprise:
The blind pixel of equivalence, for the blind pixel of analog MEMS, provides equivalent control signal;
Equivalence is pixel effectively, for the effective pixel of analog MEMS, provides equivalent detectable signal;
Sensing circuit, for amplifying described equivalent control signal and equivalent detectable signal and read;
The blind pixel of described equivalence comprises the first metal-oxide-semiconductor and the first switch, and wherein, the grid of described first metal-oxide-semiconductor connects the first adjustable voltage, and the first pole connects power supply, between the second pole that described first switch is connected to described first metal-oxide-semiconductor and described sensing circuit;
The effective pixel of described equivalence comprises the second metal-oxide-semiconductor and second switch, and wherein, the grid of described second metal-oxide-semiconductor connects the second adjustable voltage, the second pole ground connection, between the first pole that described second switch is connected to described second metal-oxide-semiconductor and described sensing circuit.
2. the pixel equivalent electrical circuit of according to claim 1 formation infrared eye, is characterized in that:
By regulating described first adjustable voltage to regulate the resistance of described first metal-oxide-semiconductor, realize the blind pixel of described equivalence to the simulation of the blind pixel of MEMS;
By regulating described second adjustable voltage to regulate the resistance of described second metal-oxide-semiconductor, realize the effective pixel of described equivalence to the simulation of the effective pixel of MEMS.
3. the pixel equivalent electrical circuit of according to claim 1 formation infrared eye, is characterized in that: be connected with described sensing circuit as the common output end of the blind pixel of described equivalence and the effective pixel of equivalence after described first switch is connected with second switch.
4. the pixel equivalent electrical circuit of according to claim 1 formation infrared eye, is characterized in that: described first switch is the first switch MOS pipe, and described first switch MOS pipe realizes its conducting or shutoff by the first gating signal; Described second switch is second switch metal-oxide-semiconductor, and described second switch metal-oxide-semiconductor realizes its conducting or shutoff by the second gating signal.
5. utilize the pixel equivalent electrical circuit of the face formation infrared eye described in claim 1 ~ 4 any one to a method of testing for sensing circuit, it is characterized in that: comprise step:
1) the blind pixel of described equivalence is realized to the simulation of the blind pixel of MEMS, output equivalent control signal by controlling described first adjustable voltage; Meanwhile, the effective pixel of described equivalence is realized to the simulation of the effective pixel of MEMS, output equivalent detectable signal by controlling described second adjustable voltage;
2) integration is carried out to described equivalent control signal machine equivalence detectable signal and form integration current, and export this integration current to described sensing circuit;
3) based on described integration current, reading test is carried out to described sensing circuit, to determine whether the performance of corresponding sensing circuit reaches standard.
6. the pixel equivalent electrical circuit of face formation infrared eye that utilizes according to claim 5 is to the method for testing of sensing circuit, it is characterized in that: before described method of testing is carried out at the blind pixel of MEMS and the effective pixel formation of MEMS.
7. the pixel equivalent electrical circuit of face formation infrared eye that utilizes according to claim 5 is to the method for testing of sensing circuit, it is characterized in that:
Minimum output valve when being set as that the blind pixel of MEMS works based on the value of the equivalent control signal of described first adjustable voltage and between maximum output valve;
Minimum output valve when being set as that the effective pixel of MEMS works based on the value of the equivalent detectable signal of described second adjustable voltage and between maximum output valve.
8. a face formation infrared eye, is characterized in that, comprising:
MEMS pixel array, comprises the MEMS pixel of multiple rectangular arrayed, for the current signal of the change exporting change according to temperature;
The blind pixel of multiple equivalence, the blind pixel of each equivalence arranges corresponding setting with each MEMS of arranging pixel, for the blind pixel of analog MEMS, provides equivalent control signal; Wherein, the blind pixel of described equivalence comprises the first metal-oxide-semiconductor and the first switch, and the grid of described first metal-oxide-semiconductor connects the first adjustable voltage, and the first pole connects power supply, between the second pole that described first switch is connected to described first metal-oxide-semiconductor and sensing circuit array;
The effective pixel of multiple equivalence, the effective pixel of each equivalence arranges corresponding setting with each MEMS of arranging pixel, for the effective pixel of analog MEMS, provides equivalent detectable signal; Wherein, the effective pixel of described equivalence comprises the second metal-oxide-semiconductor and second switch, and the grid of described second metal-oxide-semiconductor connects the second adjustable voltage, the second pole ground connection, between the first pole that described second switch is connected to described second metal-oxide-semiconductor and sensing circuit array;
Sensing circuit array, for amplifying current signal, the equivalent control signal of respectively this equivalent blind pixel output and the equivalent detectable signal of the respectively effective pixel output of this equivalence that respectively this MEMS pixel exports and read.
9. according to claim 8 formation infrared eye, is characterized in that: the blind pixel of described equivalence and the effective pixel of described equivalence are arranged at the both sides up and down of each row MEMS pixel respectively.
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