CN107733524A - A kind of detector with fexible film PIN photodiode array - Google Patents
A kind of detector with fexible film PIN photodiode array Download PDFInfo
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- CN107733524A CN107733524A CN201710927083.2A CN201710927083A CN107733524A CN 107733524 A CN107733524 A CN 107733524A CN 201710927083 A CN201710927083 A CN 201710927083A CN 107733524 A CN107733524 A CN 107733524A
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/07—Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems
- H04B10/075—Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems using an in-service signal
- H04B10/079—Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems using an in-service signal using measurements of the data signal
- H04B10/0791—Fault location on the transmission path
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/07—Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems
- H04B10/075—Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems using an in-service signal
- H04B10/079—Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems using an in-service signal using measurements of the data signal
- H04B10/0795—Performance monitoring; Measurement of transmission parameters
- H04B10/07955—Monitoring or measuring power
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- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Light Receiving Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Measurement Of Radiation (AREA)
Abstract
A kind of detector with fexible film PIN photodiode array, logic unit is selected including row, and the analogy signal processing unit array being sequentially connected in series by data/address bus, AD conversion cell array and processing main frame, it is additionally provided with flexible PIN photodiode collection array, the input of the flexible PIN photodiode collection array connects the output end of the selection logic unit by data/address bus, the output end of the flexible PIN photodiode collection array connects the input of the analogy signal processing unit array by data/address bus, the control output end of the processing main frame connects the control signal of the row selection logic unit by controlling bus.The present invention can carry out the fibre circuit light leak fault detect of high-speed, high precision, can directly overlay around optical fiber, realize whole piece fibre circuit or the real-time fault detection of emphasis fiber segment.Accuracy of detection, response speed can be greatly improved, and reduces the cost of fiber failure detector.
Description
Technical field
The present invention relates to a kind of photodetector.It is used for light leak detection in optical communication system more particularly to a kind of and has
The detector of fexible film PIN photodiode array.
Background technology
In fiber optic communication systems, just the main media of information transfer, optical fiber are then the main thoroughfares of optical transport.Although
In the ideal case, it is believed that the just linear transmission transmitted in optical fiber, even if changing there occurs light path as complete
Reflex is transferred to receiving terminal in the case of no scattering leakage from transmitting terminal.But caused by wiring or environmental change
Fibre-optical bending can cause the angle of light in optical fiber to be unsatisfactory for the requirement of the cirtical angle of total reflection, cause the scattering of light in optical fiber to leak.
Equally, the use damage of optical fiber or external force, which influence fracture etc., can also cause leakage of the light in transmitting procedure, and then influence light
The quality of communication, or even directly contribute communication disruption.
So, it is therefore desirable to be able to it is as sensitive as possible, quickly, accurately detect the leakage intensity of light in optical fiber transmitting procedure
And position, so as to fast positioning failure and complete the repairing of optical communication line.Existing optical fibre circuit failure tester is main
It is to carry out fibre system fault detect using the decay of power after fiber failure, but detection response speed is slower, equipment
Bulky complex, and only the leakage of large area light just has good Detection results to this mode to caused by fibercuts.
Patent CN1376908 proposes a kind of based on ANS noises progress fiber failure detection caused by fibercuts
Mode, this detection mode can obtain detection response speed faster compared with traditional detection mode, but there are still equipment to hold high
Your complexity, just there is the shortcomings that fine Detection results only for the leakage of large area light, it is impossible to fully meet fibre circuit large area paving
If detection need.
The content of the invention
The technical problem to be solved by the invention is to provide a kind of fibre circuit light leak event that can carry out high-speed, high precision
Hinder the detector with fexible film PIN photodiode array of detection.
The technical solution adopted in the present invention is：A kind of detector with fexible film PIN photodiode array, bag
Include row selection logic unit, and analogy signal processing unit array, the AD conversion list being sequentially connected in series by data/address bus
Element array and processing main frame, it is additionally provided with flexible PIN photodiode collection array, the flexible PIN photodiode collection
The input of array connects the output end of the selection logic unit by data/address bus, and the flexible PIN photodiode is adopted
The output end of collection array connects the input of the analogy signal processing unit array by data/address bus, the processing main frame
Control output end connects the control signal of the row selection logic unit by controlling bus.
When described processing main frame is remote equipment, described processing main frame respectively with described AD conversion cell array
Between row selection logic unit communicated by trunking.
It is flexible that described flexible PIN photodiode collection array includes 5~15 structure identicals being arranged side by side
PIN photodiode collecting unit, the input of 5~15 flexible PIN photodiode collecting units being arranged side by side
Connect row selection logic unit respectively, the analogy signal processing unit array include be arranged side by side with described 5~
5~15 analogy signal processing units that the output end of 15 flexible PIN photodiode collecting units connects one to one, institute
State AD conversion cell array and include and being arranged side by side correspond with 5~15 analogy signal processing units output end
5~15 A/D convertor circuits of connection.
Flexible PIN photodiode collecting unit described in each, include the first fexible film photodiode,
Second fexible film photodiode and flexible thin-film transistor, the first fexible film photodiode and the second flexible thin
The plus earth of film photodiode, negative pole connect the drain electrode of flexible thin-film transistor, the grid of the flexible thin-film transistor
Connection row selection logic unit, source electrode connect the input of corresponding amplifying circuit in analogy signal processing unit array.
Flexible PIN photodiode collecting unit concrete structure described in each includes：There are PET substrate and setting
SU8 material layers on the PET substrate upper surface, fexible film crystal is respectively arranged with described SU8 material layers
The structure of pipe and the structure of the first fexible film photodiode and the second fexible film photodiode, the fexible film
Transistor connects the first fexible film photodiode and the second fexible film photodiode respectively by interconnecting metal, and
Connect the row selection logic unit and amplifying circuit.
The structure of described flexible thin-film transistor includes first be disposed side by side on the SU8 material layers upper surface
Monocrystalline silicon thin film n-type doping area, the first monocrystalline silicon thin film are undoped with area and the second monocrystalline silicon thin film n-type doping area, and described first
Active electrode is set in monocrystalline silicon thin film n-type doping area, and first monocrystalline silicon thin film in area by grid oxide layer undoped with being set
There is gate electrode, drain electrode is provided with the second monocrystalline silicon thin film n-type doping area, wherein, the source electrode is by interconnecting gold
Category connection signal output port, the signal output port connect corresponding amplifying circuit in analogy signal processing unit array
Input, the gate electrode connecting valve control port, the output end of the switch control terminal mouth connection row selection logic unit,
The drain electrode connects the first fexible film photodiode and the second fexible film photodiode negative pole by interconnecting metal.
The first described fexible film photodiode and the structure of the second fexible film photodiode include side by side
Be arranged on the 3rd monocrystalline silicon thin film n-type doping area on the SU8 material layers upper surface, the second monocrystalline silicon thin film undoped with area,
Monocrystalline silicon thin film p-type doped region, the 3rd monocrystalline silicon thin film are undoped with area and the 4th monocrystalline silicon thin film n-type doping area, and the described 3rd
The first N region electrodes are provided with monocrystalline silicon thin film n-type doping area, P areas electricity is provided with the monocrystalline silicon thin film p-type doped region
Pole, the 2nd N region electrodes are provided with the 4th monocrystalline silicon thin film n-type doping area, and the P region electrodes form positive pole and pass through interconnection
Metal and earth terminal ground connection, the first N region electrodes and the 2nd N region electrodes form negative pole and connect fexible film by interconnecting metal
The drain electrode of transistor.
A kind of detector with fexible film PIN photodiode array of the present invention, can carry out high-speed, high precision
Fibre circuit light leak fault detect, the detector is good with optical fiber stickiness, is examined without using more complicated and expensive luminous power
Measurement equipment, cost is low, can be used for the light leak fault detect of whole piece optical fiber or emphasis fiber segment, suitable for promoting.Present invention inspection
The photodiode part surveyed in device uses thin film flexible PIN photodiode, has area is small, simple in construction, price is low etc.
Feature.Prior is due to its flexible good mechanical properties, and detector of the invention can directly overlay optical fiber week
Enclose, realize whole piece fibre circuit or the real-time fault detection of emphasis fiber segment.So one kind of the invention has fexible film
The detector of PIN photodiode array, accuracy of detection, response speed can be greatly improved, and reduce fiber failure detector
Cost.
Brief description of the drawings
Fig. 1 is a kind of composition of the detector first embodiment with fexible film PIN photodiode array of the present invention
Block diagram；
Fig. 2 is a kind of composition of the detector second embodiment with fexible film PIN photodiode array of the present invention
Block diagram；
Fig. 3 is the structural representation of flexible PIN photodiode collection array in the present invention；
Fig. 4 is the circuit signal of flexible PIN photodiode collecting unit in flexible PIN photodiode collection array
Figure；
Fig. 5 is the structural representation of flexible PIN photodiode collecting unit in flexible PIN photodiode collection array
Figure；
Fig. 6 is the side view of flexible thin-film transistor part in Fig. 5；
Fig. 7 is the side view of flexible optoelectronic diode section in Fig. 5.
In figure
101：Row selection logic unit 102：Flexible PIN photodiode gathers array
103：Analogy signal processing unit array 104：AD conversion cell array
105：Handle main frame 106：Data/address bus
107：Controlling bus 108：Trunking
1021：Flexible PIN photodiode collecting unit 1：3rd monocrystalline silicon thin film n-type doping area
2：Second monocrystalline silicon thin film is undoped with area 3：Monocrystalline silicon thin film p-type doped region
4：3rd monocrystalline silicon thin film is undoped with area 5：4th monocrystalline silicon thin film n-type doping area
6：Earth terminal 7：Signal output port
8：First monocrystalline silicon thin film n-type doping area 9：First monocrystalline silicon thin film is undoped with area
10：Second monocrystalline silicon thin film n-type doping area 11：Switch control terminal mouth
12：Interconnect metal 13：PET substrate
14：SU8 material layers 15：First N region electrodes
16：P region electrodes 17：2nd N region electrodes
18：Source electrode 19：Gate electrode
20：Grid oxide layer 21：Drain electrode
Embodiment
With reference to a kind of detection with fexible film PIN photodiode array of embodiment and accompanying drawing to the present invention
Device is described in detail.
As shown in figure 1, a kind of detector with fexible film PIN photodiode array of the present invention, including row choosing
Select logic unit 101, and be sequentially connected in series by data/address bus 106 analogy signal processing unit array 103, AD conversion
Cell array 104 and processing main frame 105, it is additionally provided with flexible PIN photodiode collection array 102, the flexible PIN photoelectricity
The input of diode collection array 102 connects the output end of the selection logic unit 101 by data/address bus 106, described
The output end of flexible PIN photodiode collection array 102 connects the analogy signal processing unit battle array by data/address bus 106
The input of row 103, the control output end of the processing main frame 105 connect the row by controlling bus 107 and select logic list
The control signal of member 101.
As shown in Fig. 2 when described processing main frame 105 is remote equipment, described processing main frame 105 respectively with it is described
AD conversion cell array 104 and row selection logic unit 101 between be to be communicated by trunking 108.
As shown in figure 3, described flexible PIN photodiode collection array 102 includes 5~15 knots being arranged side by side
Structure identical flexibility PIN photodiode collecting unit 1021,5~15 flexible PIN photodiodes being arranged side by side
The input of collecting unit 1021 connects the row selection logic unit 101, the analogy signal processing unit array 103 respectively
Include be arranged side by side correspond with described 5~15 flexible PIN photodiode collecting units 1021 output end to connect
5~15 analogy signal processing units connect, the AD conversion cell array 104 include be arranged side by side with described 5~15
5~15 A/D convertor circuits that the output end of individual analogy signal processing unit connects one to one.
As shown in figure 4, the flexible PIN photodiode collecting unit 1021 described in each, it is flexible to include first
Thin film photodiode D1, the second fexible film photodiode D2 and flexible thin-film transistor T, the first fexible film light
Electric diode D1 and the second fexible film photodiode D2 plus earth, negative pole connection flexible thin-film transistor T drain electrode,
The grid connection row selection logic unit 101 of the flexible thin-film transistor T, source electrode connection analogy signal processing unit array
The input of corresponding amplifying circuit in 103.
Wherein, the first fexible film photodiode D1, the second fexible film photodiode D2 are used for detection fiber
Light leak situation, and the opening and closing of flexible thin-film transistor T control collecting units, and then a certain section of optical fiber is examined for controlling
The opening and closing of survey.And in view of the total tune of array, flexible thin-film transistor T and the first fexible film photoelectricity two
Pole pipe D1, the second fexible film photodiode D2 are required for being connected with main analysis circuit, coordinate each collection by analysis circuit
Work and data between unit are passed back.First fexible film photodiode D1, the second fexible film photodiode D2
The proportional change of reverse current and luminous power, optical wavelength, quantifying for luminous power, optical wavelength and photoelectric current can be established by experiment
Model, therefore electric current caused by the first fexible film photodiode D1, the second fexible film photodiode D2 can be believed
Number pass back to obtain the power information of optical fiber light leakage.
Photodiode part uses flexible PIN photodiode, has the characteristics that area is small, simple in construction, price is low.
Prior is due to its flexible good mechanical properties, and this detector can be directly overlayed around optical fiber, realized whole
The real-time fault detection of bar fibre circuit or emphasis fiber segment.So inspection using this flexible PIN photodiode array
Survey mode, accuracy of detection, response speed can be greatly improved, and reduce the cost of fiber failure detector.
As shown in Fig. 5, Fig. 6, Fig. 7, the concrete structure bag of flexible PIN photodiode collecting unit 1021 described in each
Include：There are PET substrate 13 and the SU8 material layers 14 being arranged on the upper surface of PET substrate 13, described SU8 materials
Structure and the first fexible film photodiode D1 and second that flexible thin-film transistor T is respectively arranged with the bed of material 14 are flexible
Thin film photodiode D2 structure, the flexible thin-film transistor T connect the first fexible film respectively by interconnecting metal 12
Photodiode D1 and the second fexible film photodiode D2, and the connection row selection logic unit 101 and amplification electricity
Road.
As shown in Figure 5, Figure 6, described flexible thin-film transistor T structure, which includes, is disposed side by side on the SU8 materials
The first monocrystalline silicon thin film n-type doping area 8, the first monocrystalline silicon thin film on the upper surface of floor 14 is thin undoped with the monocrystalline silicon of area 9 and second
Film n-type doping area 10, active electrode 18, first monocrystalline silicon thin film are set in the first monocrystalline silicon thin film n-type doping area 8
Undoped with gate electrode 19 is provided with by grid oxide layer 20 in area 9, it is provided with Lou in the second monocrystalline silicon thin film n-type doping area 10
Electrode 21, wherein, the source electrode 18 connects signal output port 7 by interconnecting metal 12, and the signal output port 7 connects
The input of corresponding amplifying circuit in analogy signal processing unit array 103, the connecting valve control port of gate electrode 19
11, the output end of the connection of the switch control terminal mouth 11 row selection logic unit 101, the drain electrode 21 is by interconnecting metal 12
Connect the first fexible film photodiode D1 and the second fexible film photodiode D2 negative poles.
As shown in Figure 5, Figure 7, described the first fexible film photodiode D1 and the second fexible film photodiode
D2 structure includes the 3rd monocrystalline silicon thin film n-type doping area 1 being disposed side by side on the upper surface of SU8 material layers 14,
Two monocrystalline silicon thin films are undoped with area 2, monocrystalline silicon thin film p-type doped region 3, the 3rd monocrystalline silicon thin film undoped with the monocrystalline of area 4 and the 4th
Silicon thin film n-type doping area 5, the first N region electrodes 15, the monocrystalline silicon are provided with the 3rd monocrystalline silicon thin film n-type doping area 1
P region electrodes 16 are provided with film p-type doped region 3, the 2nd N areas electricity is provided with the 4th monocrystalline silicon thin film n-type doping area 5
Pole 17, the P region electrodes 16 form positive pole and are grounded by interconnecting metal 12 and earth terminal 6, the first N region electrodes 15 and second
N region electrodes 17 form the drain electrode 21 that negative pole connects flexible thin-film transistor T1 by interconnecting metal 12.
A kind of detector with fexible film PIN photodiode array of the present invention, during detection, by flexible PIN light
Electric diode collection array is closely attached on testing fiber surface, and row selection logic unit gates corresponding detection section as needed
Flexible PIN photodiode collecting unit.When optical fiber produces light leakage due to bending leakage or fracture, excited by light and
Caused reversely photoelectric current can make the first fexible film photodiode D1, the second fexible film photodiode D2 direct current special
Property occur corresponding to change.This change can be admitted to comparator and detection threshold value electricity in corresponding analogy signal processing unit
Stream is compared.If result is more than detection threshold value, corresponding current signal can be transferred to corresponding AD conversion unit, be converted into counting
Word signal passes processing main frame back, then exports corresponding testing result by processing main frame, such as：Light leak position, light leakage power
Deng, and carry out next step early warning control.The major function of analogy signal processing unit is that processing is amplified to signal and is compared,
And improve signal to noise ratio.Meanwhile in order that testing result is more accurate, it is also necessary to some other controls of detector increase
Signal and noise processed mechanism etc..
The present invention is described by taking fiber leaky fault locator as an example above.But the invention is not limited in this.
The present invention can also apply other in biologic medical, military affairs etc. to need light to detect, the neck that particularly curved object light detects in real time
Domain.
Meanwhile it is of the invention by taking silicon thin film and PET flexible substrates as an example, can also be by the thin of this example in the case where other are using needs
Membrane material is changed to other semi-conducting materials such as germanium, and backing material is changed to other flexible materials such as fiber, degradable resin.The present invention
It is in parallel by taking two flexible PIN photodiode parallel connections as an example, but in actual use in order to improve accuracy of detection and sensitivity
The quantity of flexible PIN photodiode can also accordingly increase.
Claims (7)
1. a kind of detector with fexible film PIN photodiode array, including row selection logic unit (101), and
The analogy signal processing unit array (103) that is sequentially connected in series by data/address bus (106), AD conversion cell array (104)
With processing main frame (105), it is characterised in that be additionally provided with flexible PIN photodiode collection array (102), the flexible PIN
The input of photodiode collection array (102) connects the defeated of the selection logic unit (101) by data/address bus (106)
Go out end, the output end of the flexible PIN photodiode collection array (102) connects the simulation by data/address bus (106)
The input of signal processing unit array (103), the control output end of the processing main frame (105) pass through controlling bus (107)
Connect the control signal of the row selection logic unit (101).
2. a kind of detector with fexible film PIN photodiode array according to claim 1, its feature exist
In, when described processing main frame (105) is remote equipment, described processing main frame (105) respectively with described AD conversion list
Between element array (104) and row selection logic unit (101) communicated by trunking (108).
3. a kind of detector with fexible film PIN photodiode array according to claim 1, its feature exist
In it is flexible that described flexible PIN photodiode collection array (102) includes 5~15 structure identicals being arranged side by side
PIN photodiode collecting unit (1021), 5~15 flexible PIN photodiode collecting units being arranged side by side
(1021) input connects the row selection logic unit (101), analogy signal processing unit array (103) bag respectively
Be arranged side by side correspond with described 5~15 flexible PIN photodiode collecting units (1021) output end is included to connect
5~15 analogy signal processing units connect, the AD conversion cell array (104) include be arranged side by side with described 5~
5~15 A/D convertor circuits that the output end of 15 analogy signal processing units connects one to one.
4. a kind of detector with fexible film PIN photodiode array according to claim 3, its feature exist
In the flexible PIN photodiode collecting unit (1021) described in each, including the first fexible film photodiode
(D1), the second fexible film photodiode (D2) and flexible thin-film transistor (T), the first fexible film photodiode
(D1) and the second fexible film photodiode (D2) plus earth, negative pole connection flexible thin-film transistor (T) drain electrode, institute
State the grid connection row selection logic unit (101) of flexible thin-film transistor (T), source electrode connection analogy signal processing unit array
(103) input of corresponding amplifying circuit in.
5. a kind of detector with fexible film PIN photodiode array according to claim 3 or 4, its feature
It is, flexible PIN photodiode collecting unit (1021) concrete structure described in each includes：There is PET substrate
(13) and the SU8 material layers (14) that are arranged on PET substrate (13) upper surface, in described SU8 material layers (14)
It is respectively arranged with the structure and the first fexible film photodiode (D1) and the second fexible film of flexible thin-film transistor (T)
The structure of photodiode (D2), the flexible thin-film transistor (T) connect the first flexible thin respectively by interconnecting metal (12)
Film photodiode (D1) and the second fexible film photodiode (D2), and the connection row selection logic unit (101)
And amplifying circuit.
6. a kind of detector with fexible film PIN photodiode array according to claim 5, its feature exist
In the structure of described flexible thin-film transistor (T) includes be disposed side by side on SU8 material layers (14) upper surface
One monocrystalline silicon thin film n-type doping area (8), the first monocrystalline silicon thin film are undoped with area (9) and the second monocrystalline silicon thin film n-type doping area
(10) active electrode (18), is set on the first monocrystalline silicon thin film n-type doping area (8), and first monocrystalline silicon thin film is not mixed
Gate electrode (19) is provided with by grid oxide layer (20) on miscellaneous area (9), set on the second monocrystalline silicon thin film n-type doping area (10)
There is drain electrode (21), wherein, the source electrode (18) connects signal output port (7), the signal by interconnecting metal (12)
The input of corresponding amplifying circuit, the gate electrode in output port (7) connection analogy signal processing unit array (103)
(19) connecting valve control port (11), the output end of switch control terminal mouth (11) the connection row selection logic unit (101),
The drain electrode (21) connects the first fexible film photodiode (D1) and the second fexible film light by interconnecting metal (12)
Electric diode (D2) negative pole.
7. a kind of detector with fexible film PIN photodiode array according to claim 5, its feature exist
In the structure of the first described fexible film photodiode (D1) and the second fexible film photodiode (D2) includes simultaneously
Arrange the 3rd monocrystalline silicon thin film n-type doping area (1) being arranged on SU8 material layers (14) upper surface, the second monocrystalline silicon thin film
Undoped with area (2), monocrystalline silicon thin film p-type doped region (3), the 3rd monocrystalline silicon thin film undoped with area (4) and the 4th monocrystalline silicon thin film N
Type doped region (5), the first N region electrodes (15), the monocrystalline silicon are provided with the 3rd monocrystalline silicon thin film n-type doping area (1)
P region electrodes (16) are provided with film p-type doped region (3), is provided with the 4th monocrystalline silicon thin film n-type doping area (5)
Two N region electrodes (17), the P region electrodes (16) form positive pole and are grounded by interconnecting metal (12) and earth terminal (6), and described first
N region electrodes (15) and the 2nd N region electrodes (17) form negative pole and connect flexible thin-film transistor (T1) by interconnecting metal (12)
Drain electrode (21).
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Cited By (5)
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| CN108809415A (en) * | 2018-04-04 | 2018-11-13 | 江苏申辰通信技术有限公司 | A kind of fibre optical sensor and the processing procedure that optical cable obstacle is judged using the sensor |
| CN109545797A (en) * | 2018-10-17 | 2019-03-29 | 天津大学 | Flexible two-input NOR gate circuit based on flexible substrate |
| CN109560084A (en) * | 2018-10-16 | 2019-04-02 | 天津大学 | Flexible Schmidt circuit based on flexible substrate |
| CN113422645A (en) * | 2021-07-30 | 2021-09-21 | 吉林大学 | Pulse width modulation system and method |
| CN114879084A (en) * | 2022-07-08 | 2022-08-09 | 南京宏泰半导体科技有限公司 | System and method for testing efficient leakage current of array diode chip |
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