CN107733524B - Detector with flexible film PIN photodiode array - Google Patents
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- CN107733524B CN107733524B CN201710927083.2A CN201710927083A CN107733524B CN 107733524 B CN107733524 B CN 107733524B CN 201710927083 A CN201710927083 A CN 201710927083A CN 107733524 B CN107733524 B CN 107733524B
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/07—Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems
- H04B10/075—Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems using an in-service signal
- H04B10/079—Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems using an in-service signal using measurements of the data signal
- H04B10/0791—Fault location on the transmission path
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/07—Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems
- H04B10/075—Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems using an in-service signal
- H04B10/079—Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems using an in-service signal using measurements of the data signal
- H04B10/0795—Performance monitoring; Measurement of transmission parameters
- H04B10/07955—Monitoring or measuring power
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- Transforming Light Signals Into Electric Signals (AREA)
- Measurement Of Radiation (AREA)
Abstract
The detector comprises a row selection logic unit, an analog signal processing unit array, an AD conversion unit array and a processing host which are sequentially connected in series through a data bus, and further comprises a flexible PIN photodiode acquisition array, wherein the input end of the flexible PIN photodiode acquisition array is connected with the output end of the selection logic unit through the data bus, the output end of the flexible PIN photodiode acquisition array is connected with the input end of the analog signal processing unit array through the data bus, and the control output end of the processing host is connected with the control input end of the row selection logic unit through the control bus. The invention can perform high-speed high-precision optical fiber line light leakage fault detection, can directly cover the periphery of the optical fiber, and realizes real-time fault detection of the whole optical fiber line or a key optical fiber section. The detection precision and response speed can be greatly improved, and the cost of the optical fiber fault detector can be reduced.
Description
Technical Field
The present invention relates to a photodetector. And more particularly to a detector with a flexible thin film PIN photodiode array for light leak detection in an optical communication system.
Background
In an optical fiber communication system, light is the main medium for information transmission, and optical fibers are the main channels for optical transmission. Although in an ideal case, the light transmitted in the optical fiber is considered to be transmitted straight, even if the optical path is changed, it is transmitted from the transmitting end to the receiving end without scattering leakage due to total reflection. However, the bending of the optical fiber caused by wiring or environmental changes can cause the light angle in the optical fiber to not meet the requirement of the total reflection critical angle, so that the light in the optical fiber is scattered and leaked. Also, damage to the optical fiber or breakage of the optical fiber caused by external force may cause leakage of light during transmission, thereby affecting the quality of optical communication and even directly causing interruption of communication.
Therefore, it is desirable to detect the intensity and position of the light leakage during the transmission of the optical fiber as sensitively, rapidly and accurately as possible, so as to rapidly locate the fault and complete the rush repair of the optical communication line. The existing optical fiber line fault detection device mainly utilizes the attenuation of power after optical fiber faults to detect faults of an optical fiber system, but has the defects of slower detection response speed, heavy and complex equipment, and the mode only has a good detection effect on large-area light leakage caused by optical fiber breakage.
Patent CN1376908 proposes a method for detecting optical fiber faults based on ANS noise generated during optical fiber breakage, and the detection method can obtain a faster detection response speed than the traditional detection method, but still has the disadvantages of expensive and complex equipment and good detection effect only for large-area light leakage, and cannot completely meet the detection requirement of large-area laying of optical fiber lines.
Disclosure of Invention
The invention aims to solve the technical problem of providing a detector with a flexible film PIN photodiode array, which can detect light leakage faults of an optical fiber line at high speed and high precision.
The technical scheme adopted by the invention is as follows: the detector comprises a row selection logic unit, an analog signal processing unit array, an AD conversion unit array and a processing host which are sequentially connected in series through a data bus, and further comprises a flexible PIN photodiode acquisition array, wherein the input end of the flexible PIN photodiode acquisition array is connected with the output end of the selection logic unit through the data bus, the output end of the flexible PIN photodiode acquisition array is connected with the input end of the analog signal processing unit array through the data bus, and the control output end of the processing host is connected with the control input end of the row selection logic unit through the control bus.
When the processing host is a remote device, the processing host is respectively communicated with the AD conversion unit array and the row selection logic unit through a relay device.
The flexible PIN photodiode acquisition array comprises 5-15 flexible PIN photodiode acquisition units which are arranged side by side and have the same structure, the input ends of the 5-15 flexible PIN photodiode acquisition units which are arranged side by side are respectively connected with the row selection logic unit, the analog signal processing unit array comprises 5-15 analog signal processing units which are arranged side by side and are connected with the output ends of the 5-15 flexible PIN photodiode acquisition units in a one-to-one correspondence manner, and the AD conversion unit array comprises 5-15 AD conversion circuits which are arranged side by side and are connected with the output ends of the 5-15 analog signal processing units in a one-to-one correspondence manner.
Each flexible PIN photodiode acquisition unit comprises a first flexible film photodiode, a second flexible film photodiode and a flexible film transistor, wherein the anodes of the first flexible film photodiode and the second flexible film photodiode are grounded, the cathodes of the first flexible film photodiode and the second flexible film photodiode are connected with the drain electrode of the flexible film transistor, the grid electrode of the flexible film transistor is connected with a row selection logic unit, and the source electrode of the flexible film transistor is connected with the input end of a corresponding amplifying circuit in the analog signal processing unit array.
Each flexible PIN photodiode acquisition unit comprises the following specific structures: the structure of the flexible thin film transistor and the structure of the first flexible thin film photodiode and the structure of the second flexible thin film photodiode are respectively arranged on the SU8 material layer, and the flexible thin film transistor is respectively connected with the first flexible thin film photodiode and the second flexible thin film photodiode through interconnection metals and is connected with the row selection logic unit and the amplifying circuit.
The structure of the flexible thin film transistor comprises a first monocrystalline silicon thin film N-type doped region, a first monocrystalline silicon thin film undoped region and a second monocrystalline silicon thin film N-type doped region which are arranged on the upper end face of the SU8 material layer side by side, wherein an active electrode is arranged on the first monocrystalline silicon thin film N-type doped region, a gate electrode is arranged on the first monocrystalline silicon thin film undoped region through a gate oxide layer, and a drain electrode is arranged on the second monocrystalline silicon thin film N-type doped region, wherein the source electrode is connected with a signal output port through interconnection metal, the signal output port is connected with the input end of a corresponding amplifying circuit in the analog signal processing unit array, the gate electrode is connected with a switch control port, the switch control port is connected with the output end of a row selection logic unit, and the drain electrode is connected with the negative electrode of a first flexible thin film photodiode and a second flexible thin film photodiode through interconnection metal.
The structure of the first flexible film photodiode and the second flexible film photodiode comprises a third monocrystalline silicon film N-type doped region, a second monocrystalline silicon film undoped region, a monocrystalline silicon film P-type doped region, a third monocrystalline silicon film undoped region and a fourth monocrystalline silicon film N-type doped region which are arranged on the upper end face of the SU8 material layer side by side, wherein a first N-type electrode is arranged on the third monocrystalline silicon film N-type doped region, a P-type electrode is arranged on the monocrystalline silicon film P-type doped region, a second N-type electrode is arranged on the fourth monocrystalline silicon film N-type doped region, the P-type electrode forms an anode and is grounded through interconnection metal and grounding, and the first N-type electrode and the second N-type electrode form a cathode and are connected with a drain electrode of the flexible film transistor through interconnection metal.
The detector with the flexible film PIN photodiode array can be used for detecting light leakage faults of optical fiber lines at high speed and high precision, has good adhesion with the optical fibers, does not need to use more complicated and expensive optical power detection equipment, has low cost, can be used for detecting light leakage faults of the whole optical fibers or key optical fiber sections, and is suitable for popularization. The photodiode part in the detector adopts the thin film flexible PIN photodiode, and has the characteristics of small area, simple structure, low price and the like. More importantly, due to the good flexible mechanical property, the detector can be directly covered around the optical fiber, so that the real-time fault detection of the whole optical fiber line or the key optical fiber section is realized. Therefore, the detector with the flexible film PIN photodiode array can greatly improve the detection precision and response speed and reduce the cost of the optical fiber fault detector.
Drawings
FIG. 1 is a block diagram of a first embodiment of a detector having a flexible thin film PIN photodiode array in accordance with the present invention;
FIG. 2 is a block diagram of a second embodiment of a detector having a flexible thin film PIN photodiode array in accordance with the present invention;
FIG. 3 is a schematic diagram of a flexible PIN photodiode acquisition array in accordance with the present invention;
FIG. 4 is a schematic circuit diagram of a flexible PIN photodiode acquisition unit in a flexible PIN photodiode acquisition array;
FIG. 5 is a schematic diagram of the structure of a flexible PIN photodiode acquisition unit in a flexible PIN photodiode acquisition array;
FIG. 6 is a side view of the flexible thin film transistor portion of FIG. 5;
fig. 7 is a side view of the flexible photodiode section of fig. 5.
In the figure
101: row selection logic 102: flexible PIN photodiode acquisition array
103: an analog signal processing unit array 104: AD conversion cell array
105: processing host 106: data bus
107: control bus 108: relay device
1021: flexible PIN photodiode acquisition unit 1: third monocrystalline silicon thin film N-type doped region
2: second monocrystalline silicon thin film undoped region 3: monocrystalline silicon film P-type doped region
4: third single crystal silicon thin film undoped region 5: fourth monocrystalline silicon thin film N-type doped region
6: ground terminal 7: signal output port
8: first monocrystalline silicon thin film N-type doped region 9: undoped region of first monocrystalline silicon film
10: second monocrystalline silicon thin film N-type doped region 11: switch control port
12: interconnect metal 13: PET plastic substrate
14: SU8 material layer 15: first N-region electrode
16: p-region electrode 17: second N-region electrode
18: source electrode 19: gate electrode
20: gate oxide layer 21: drain electrode
Detailed Description
A detector having a flexible thin film PIN photodiode array according to the present invention will be described in detail with reference to the examples and drawings.
As shown in fig. 1, the detector with the flexible thin film PIN photodiode array of the present invention comprises a row selection logic unit 101, an analog signal processing unit array 103, an AD conversion unit array 104 and a processing host 105 which are sequentially connected in series through a data bus 106, and a flexible PIN photodiode acquisition array 102, wherein an input end of the flexible PIN photodiode acquisition array 102 is connected with an output end of the selection logic unit 101 through the data bus 106, an output end of the flexible PIN photodiode acquisition array 102 is connected with an input end of the analog signal processing unit array 103 through the data bus 106, and a control output end of the processing host 105 is connected with a control input end of the row selection logic unit 101 through a control bus 107.
As shown in fig. 2, when the processing host 105 is a remote device, the processing host 105 communicates with the AD conversion unit array 104 and the row selection logic unit 101 through the relay device 108.
As shown in fig. 3, the flexible PIN photodiode acquisition array 102 includes 5-15 flexible PIN photodiode acquisition units 1021 arranged side by side and having the same structure, the input ends of the 5-15 flexible PIN photodiode acquisition units 1021 arranged side by side are respectively connected with the row selection logic unit 101, the analog signal processing unit array 103 includes 5-15 analog signal processing units arranged side by side and connected with the output ends of the 5-15 flexible PIN photodiode acquisition units 1021 in one-to-one correspondence, and the AD conversion unit array 104 includes 5-15 AD conversion circuits arranged side by side and connected with the output ends of the 5-15 analog signal processing units in one-to-one correspondence.
As shown in fig. 4, each of the flexible PIN photodiode collection units 1021 includes a first flexible thin film photodiode D1, a second flexible thin film photodiode D2, and a flexible thin film transistor T, where anodes of the first flexible thin film photodiode D1 and the second flexible thin film photodiode D2 are grounded, cathodes of the first flexible thin film photodiode D1 and the second flexible thin film photodiode D2 are connected to drains of the flexible thin film transistor T, gates of the flexible thin film transistor T are connected to the row selection logic unit 101, and sources of the flexible thin film transistor T are connected to input ends of corresponding amplifying circuits in the analog signal processing unit array 103.
The first flexible thin film photodiode D1 and the second flexible thin film photodiode D2 are used for detecting light leakage of an optical fiber, and the flexible thin film transistor T is used for controlling the on/off of the acquisition unit, and further controlling the on/off of the detection of a certain section of optical fiber. And considering the overall coordination of the array, the flexible thin film transistor T, the first flexible thin film photodiode D1 and the second flexible thin film photodiode D2 are connected with a main analysis circuit, and the analysis circuit coordinates the operation and data transmission between each acquisition unit. The reverse current of the first flexible thin film photodiode D1 and the second flexible thin film photodiode D2 changes in proportion to the optical power and the optical wavelength, and a quantitative model of the optical power, the optical wavelength and the optical current can be established through experiments, so that current signals generated by the first flexible thin film photodiode D1 and the second flexible thin film photodiode D2 can be transmitted back to acquire the power information of optical fiber light leakage.
The photodiode part adopts a flexible PIN photodiode and has the characteristics of small area, simple structure, low price and the like. More importantly, due to the good flexible mechanical property, the detector can be directly covered around the optical fiber, so that the real-time fault detection of the whole optical fiber line or the key optical fiber section is realized. Therefore, by adopting the detection mode of the flexible PIN photodiode array, the detection precision and the response speed can be greatly improved, and the cost of the optical fiber fault detector can be reduced.
As shown in fig. 5, 6 and 7, each of the flexible PIN photodiode acquisition units 1021 includes: the structure of the flexible thin film transistor T and the structure of the first flexible thin film photodiode D1 and the second flexible thin film photodiode D2 are respectively arranged on the SU8 material layer 14, the flexible thin film transistor T is respectively connected with the first flexible thin film photodiode D1 and the second flexible thin film photodiode D2 through interconnection metal 12, and the row selection logic unit 101 and the amplifying circuit are connected.
As shown in fig. 5 and 6, the structure of the flexible thin film transistor T includes a first single crystal silicon thin film N-type doped region 8, a first single crystal silicon thin film undoped region 9 and a second single crystal silicon thin film N-type doped region 10, which are arranged side by side on the upper end surface of the SU8 material layer 14, an active electrode 18 is disposed on the first single crystal silicon thin film N-type doped region 8, a gate electrode 19 is disposed on the first single crystal silicon thin film undoped region 9 through a gate oxide layer 20, and a drain electrode 21 is disposed on the second single crystal silicon thin film N-type doped region 10, wherein the source electrode 18 is connected to the signal output port 7 through an interconnection metal 12, the signal output port 7 is connected to the input end of a corresponding amplifying circuit in the analog signal processing unit array 103, the gate electrode 19 is connected to the switch control port 11, the switch control port 11 is connected to the output end of the row selection logic unit 101, and the drain electrode 21 is connected to the cathode of the first flexible thin film photodiode D1 and the second flexible thin film photodiode D2 through an interconnection metal 12.
As shown in fig. 5 and 7, the structure of the first flexible thin film photodiode D1 and the second flexible thin film photodiode D2 includes a third monocrystalline silicon thin film N-type doped region 1, a second monocrystalline silicon thin film undoped region 2, a monocrystalline silicon thin film P-type doped region 3, a third monocrystalline silicon thin film undoped region 4 and a fourth monocrystalline silicon thin film N-type doped region 5, which are arranged on the upper end surface of the SU8 material layer 14 side by side, a first N-region electrode 15 is arranged on the third monocrystalline silicon thin film N-type doped region 1, a P-region electrode 16 is arranged on the monocrystalline silicon thin film P-type doped region 3, a second N-region electrode 17 is arranged on the fourth monocrystalline silicon thin film N-type doped region 5, the positive electrode formed by the P-region electrode 16 is grounded through the interconnection metal 12 and the grounding terminal 6, and the first N-region electrode 15 and the second N-region electrode 17 form a drain electrode 21 of the negative electrode connected with the flexible thin film transistor T1 through the interconnection metal 12.
According to the detector with the flexible thin film PIN photodiode array, the flexible PIN photodiode acquisition array is closely attached to the surface of the optical fiber to be detected during detection, and the row selection logic unit gates the flexible PIN photodiode acquisition units of the corresponding detection sections according to the requirements. When the optical fiber leaks due to bending leakage or breakage, the reverse photocurrent generated by light excitation correspondingly changes the direct current characteristics of the first flexible thin film photodiode D1 and the second flexible thin film photodiode D2. This change is fed to a comparator in the corresponding analog signal processing unit for comparison with the detection threshold current. If the result is greater than the detection threshold, the corresponding current signal is transmitted to the corresponding AD conversion unit, converted into a digital signal and transmitted back to the processing host, and then the processing host outputs the corresponding detection result, for example: and the light leakage position, the light leakage power and the like, and performing the next early warning control. The main functions of the analog signal processing unit are to amplify and compare signals and to improve the signal to noise ratio. Meanwhile, in order to make the detection result more accurate, other control signals, noise processing mechanisms and the like are required to be added to the detector.
The present invention is described above by taking an optical fiber light leakage fault detector as an example. But the invention is not limited thereto. The invention can also be applied to the fields of biological medical treatment, military and the like which need light detection, in particular to the field of real-time detection of the light of a bending object.
Meanwhile, the invention takes a silicon film and a PET flexible substrate as examples, and the film material of the example can be changed into other semiconductor materials such as germanium and the like under other use needs, and the substrate material is changed into other flexible materials such as fiber, degradable resin and the like. In the invention, two flexible PIN photodiodes are connected in parallel for example, but in order to improve the detection precision and the sensitivity in actual use, the number of the parallel flexible PIN photodiodes can be correspondingly increased.
Claims (5)
1. The detector with the flexible thin film PIN photodiode array comprises a row selection logic unit (101), and an analog signal processing unit array (103), an AD conversion unit array (104) and a processing host (105) which are sequentially connected in series through a data bus (106), and is characterized by further comprising a flexible PIN photodiode acquisition array (102), wherein the input end of the flexible PIN photodiode acquisition array (102) is connected with the output end of the selection logic unit (101) through the data bus (106), the output end of the flexible PIN photodiode acquisition array (102) is connected with the input end of the analog signal processing unit array (103) through the data bus (106), and the control output end of the processing host (105) is connected with the control input end of the row selection logic unit (101) through a control bus (107);
the flexible PIN photodiode acquisition array (102) comprises 5-15 flexible PIN photodiode acquisition units (1021) which are arranged side by side and have the same structure, the input ends of the 5-15 flexible PIN photodiode acquisition units (1021) arranged side by side are respectively connected with the row selection logic unit (101), the analog signal processing unit array (103) comprises 5-15 analog signal processing units which are arranged side by side and are connected with the output ends of the 5-15 flexible PIN photodiode acquisition units (1021) in a one-to-one correspondence manner, and the AD conversion unit array (104) comprises 5-15 AD conversion circuits which are arranged side by side and are connected with the output ends of the 5-15 analog signal processing units in a one-to-one correspondence manner;
each flexible PIN photodiode acquisition unit (1021) comprises a first flexible thin film photodiode (D1), a second flexible thin film photodiode (D2) and a flexible thin film transistor (T), wherein the anodes of the first flexible thin film photodiode (D1) and the second flexible thin film photodiode (D2) are grounded, the cathodes of the first flexible thin film photodiode and the second flexible thin film photodiode are connected with the drain electrode of the flexible thin film transistor (T), the grid electrode of the flexible thin film transistor (T) is connected with a row selection logic unit (101), and the source electrode of the flexible thin film transistor is connected with the input end of a corresponding amplifying circuit in the analog signal processing unit array (103);
the first flexible thin film photodiode (D1) and the second flexible thin film photodiode (D2) are used for detecting light leakage conditions of the optical fibers, and the flexible thin film transistor (T) is used for controlling the opening and closing of the acquisition unit and further controlling the opening and closing of the detection of a certain section of optical fibers; in consideration of the overall coordination of the array, the flexible thin film transistor (T) and the first flexible thin film photodiode (D1) and the second flexible thin film photodiode (D2) are connected with a main analysis circuit, and the main analysis circuit coordinates the operation and data transmission between each acquisition unit; reverse current of the first flexible thin film photodiode (D1) and the second flexible thin film photodiode (D2) is changed in proportion to optical power and optical wavelength, and a quantitative model of the optical power, the optical wavelength and the optical current is established through experiments, so that current signals generated by the first flexible thin film photodiode (D1) and the second flexible thin film photodiode (D2) are transmitted back to acquire power information of optical fiber light leakage;
during detection, the flexible PIN photodiode acquisition array is closely attached to the surface of an optical fiber to be detected, the flexible PIN photodiode acquisition units of corresponding detection sections are gated by the row selection logic unit according to requirements, when the optical fiber is leaked due to bending or breakage, light leakage is generated, reverse photocurrents generated by light excitation can enable direct current characteristics of the first flexible thin film photodiode (D1) and the second flexible thin film photodiode (D2) to change correspondingly, the change is sent to a comparator in a corresponding analog signal processing unit to be compared with detection threshold current, if the result is larger than the detection threshold, corresponding current signals are transmitted to a corresponding AD conversion unit to be converted into digital signals to be transmitted back to a processing host, and then the processing host outputs corresponding detection results, and the method comprises the following steps: and the light leakage position, the light leakage power and the like, and performing the next early warning control.
2. The detector with flexible thin film PIN photodiode array of claim 1, wherein when the processing host (105) is a remote device, the processing host (105) communicates with the AD conversion unit array (104) and the row selection logic unit (101) through a relay device (108), respectively.
3. A detector with a flexible thin film PIN photodiode array as claimed in claim 1 wherein each of said flexible PIN photodiode acquisition units (1021) is specifically structured to include: the structure of the flexible thin film transistor (T) and the structure of the first flexible thin film photodiode (D1) and the structure of the second flexible thin film photodiode (D2) are respectively arranged on the SU8 material layer (14), the flexible thin film transistor (T) is respectively connected with the first flexible thin film photodiode (D1) and the second flexible thin film photodiode (D2) through interconnection metals (12), and the row selection logic unit (101) and the amplifying circuit are connected.
4. A detector with a flexible thin film PIN photodiode array according to claim 3, wherein the structure of the flexible thin film transistor (T) comprises a first single crystal silicon thin film N-type doped region (8), a first single crystal silicon thin film undoped region (9) and a second single crystal silicon thin film N-type doped region (10) which are arranged on the upper end surface of the SU8 material layer (14) side by side, an active electrode (18) is arranged on the first single crystal silicon thin film N-type doped region (8), a gate electrode (19) is arranged on the first single crystal silicon thin film undoped region (9) through a gate oxide layer (20), a drain electrode (21) is arranged on the second single crystal silicon thin film N-type doped region (10), wherein the active electrode (18) is connected with a signal output port (7) through an interconnection metal (12), the signal output port (7) is connected with an input end of a corresponding amplifying circuit in the analog signal processing unit array (103), the gate electrode (19) is connected with a switch control port (11), and the switch control port (11) is connected with an output end of a selection unit (21) and a second single crystal thin film N-type doped region (2) through an interconnection metal (12) and a flexible thin film diode (D).
5. A detector with a flexible thin film PIN photodiode array according to claim 3, wherein the structure of the first flexible thin film photodiode (D1) and the second flexible thin film photodiode (D2) comprises a third single crystal silicon thin film N-type doped region (1), a second single crystal silicon thin film undoped region (2), a single crystal silicon thin film P-type doped region (3), a third single crystal silicon thin film undoped region (4) and a fourth single crystal silicon thin film N-type doped region (5) which are arranged side by side on the upper end surface of the SU8 material layer (14), a first N-region electrode (15) is arranged on the third single crystal silicon thin film N-type doped region (1), a P-region electrode (16) is arranged on the fourth single crystal silicon thin film N-type doped region (3), a second N-region electrode (17) is arranged on the fourth single crystal silicon thin film N-type doped region (5), the P-region electrode (16) forms a positive electrode and is grounded through an interconnection metal (12) and a grounding terminal (6), and the first N-region electrode (15) and the second N-region (3) form a flexible drain electrode (21) through the interconnection metal electrode (21).
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| CN108809415A (en) * | 2018-04-04 | 2018-11-13 | 江苏申辰通信技术有限公司 | A kind of fibre optical sensor and the processing procedure that optical cable obstacle is judged using the sensor |
| CN109560084A (en) * | 2018-10-16 | 2019-04-02 | 天津大学 | Flexible Schmidt circuit based on flexible substrate |
| CN109545797B (en) * | 2018-10-17 | 2021-11-23 | 天津大学 | Flexible two-input NOR gate circuit based on flexible substrate |
| CN113422645B (en) * | 2021-07-30 | 2023-05-16 | 吉林大学 | Pulse width modulation system and method |
| CN114879084B (en) * | 2022-07-08 | 2023-04-07 | 南京宏泰半导体科技股份有限公司 | System and method for testing efficient leakage current of array diode chip |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1469472A (en) * | 2002-06-18 | 2004-01-21 | ������������ʽ���� | Optical interconnecting integrated circuit, method for producing optical interconnecting integrated circuit, photoelectrical apparatus and electronic instrument |
| CN203432687U (en) * | 2013-09-03 | 2014-02-12 | 东南大学 | High-precision fiber grating sensor array demodulating system based on holographic diffraction space imaging |
| CN103995278A (en) * | 2014-05-07 | 2014-08-20 | 东北大学 | Double-energy linear array detector for X-ray safety check device |
| CN106197662A (en) * | 2016-08-22 | 2016-12-07 | 成都三零嘉微电子有限公司 | A kind of photoelectric detective circuit |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7732886B2 (en) * | 2008-07-15 | 2010-06-08 | United Microelectronics Corp. | Pin photodiode structure |
| KR101571045B1 (en) * | 2008-12-26 | 2015-11-24 | 삼성디스플레이 주식회사 | Thin film transistor array substrate for X-ray detector and method of fabricating the same |
| KR20140067559A (en) * | 2012-11-27 | 2014-06-05 | 엘지디스플레이 주식회사 | Thin film transistor array substrate for digital x-ray detector |
-
2017
- 2017-09-30 CN CN201710927083.2A patent/CN107733524B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1469472A (en) * | 2002-06-18 | 2004-01-21 | ������������ʽ���� | Optical interconnecting integrated circuit, method for producing optical interconnecting integrated circuit, photoelectrical apparatus and electronic instrument |
| CN203432687U (en) * | 2013-09-03 | 2014-02-12 | 东南大学 | High-precision fiber grating sensor array demodulating system based on holographic diffraction space imaging |
| CN103995278A (en) * | 2014-05-07 | 2014-08-20 | 东北大学 | Double-energy linear array detector for X-ray safety check device |
| CN106197662A (en) * | 2016-08-22 | 2016-12-07 | 成都三零嘉微电子有限公司 | A kind of photoelectric detective circuit |
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