CN103258904A - 太阳能电池单元的制造方法及太阳能电池单元 - Google Patents

太阳能电池单元的制造方法及太阳能电池单元 Download PDF

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Publication number
CN103258904A
CN103258904A CN2013100550952A CN201310055095A CN103258904A CN 103258904 A CN103258904 A CN 103258904A CN 2013100550952 A CN2013100550952 A CN 2013100550952A CN 201310055095 A CN201310055095 A CN 201310055095A CN 103258904 A CN103258904 A CN 103258904A
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CN
China
Prior art keywords
substrate
emitter layer
antireflection film
forms
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2013100550952A
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English (en)
Chinese (zh)
Inventor
曾我知洋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Heavy Industries Ltd
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Sumitomo Heavy Industries Ltd
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Filing date
Publication date
Application filed by Sumitomo Heavy Industries Ltd filed Critical Sumitomo Heavy Industries Ltd
Publication of CN103258904A publication Critical patent/CN103258904A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
CN2013100550952A 2012-02-20 2013-02-20 太阳能电池单元的制造方法及太阳能电池单元 Pending CN103258904A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012-034286 2012-02-20
JP2012034286A JP2013171943A (ja) 2012-02-20 2012-02-20 太陽電池セルの製造方法及び太陽電池セル

Publications (1)

Publication Number Publication Date
CN103258904A true CN103258904A (zh) 2013-08-21

Family

ID=48962716

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2013100550952A Pending CN103258904A (zh) 2012-02-20 2013-02-20 太阳能电池单元的制造方法及太阳能电池单元

Country Status (5)

Country Link
US (1) US20130213466A1 (enExample)
JP (1) JP2013171943A (enExample)
KR (1) KR20130095673A (enExample)
CN (1) CN103258904A (enExample)
TW (1) TW201347209A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9680045B2 (en) 2015-06-25 2017-06-13 International Business Machines Corporation III-V solar cell structure with multi-layer back surface field
KR20170019597A (ko) * 2015-08-12 2017-02-22 엘지전자 주식회사 태양 전지 및 그 제조 방법
CN113474900A (zh) * 2018-07-05 2021-10-01 新墨西哥大学雨林创新 低成本、抗裂、可丝网印刷的金属化提高组件可靠性

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4070689A (en) * 1975-12-31 1978-01-24 Motorola Inc. Semiconductor solar energy device
US4131488A (en) * 1975-12-31 1978-12-26 Motorola, Inc. Method of semiconductor solar energy device fabrication
US5011565A (en) * 1989-12-06 1991-04-30 Mobil Solar Energy Corporation Dotted contact solar cell and method of making same

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6215864A (ja) * 1985-07-15 1987-01-24 Hitachi Ltd 太陽電池の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4070689A (en) * 1975-12-31 1978-01-24 Motorola Inc. Semiconductor solar energy device
US4131488A (en) * 1975-12-31 1978-12-26 Motorola, Inc. Method of semiconductor solar energy device fabrication
US5011565A (en) * 1989-12-06 1991-04-30 Mobil Solar Energy Corporation Dotted contact solar cell and method of making same

Also Published As

Publication number Publication date
KR20130095673A (ko) 2013-08-28
JP2013171943A (ja) 2013-09-02
TW201347209A (zh) 2013-11-16
US20130213466A1 (en) 2013-08-22

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Application publication date: 20130821