CN103247337B - 具有分段字线的热辅助闪存 - Google Patents

具有分段字线的热辅助闪存 Download PDF

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Publication number
CN103247337B
CN103247337B CN201310046386.5A CN201310046386A CN103247337B CN 103247337 B CN103247337 B CN 103247337B CN 201310046386 A CN201310046386 A CN 201310046386A CN 103247337 B CN103247337 B CN 103247337B
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CN
China
Prior art keywords
word line
local
coupled
array
memory
Prior art date
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CN201310046386.5A
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English (en)
Chinese (zh)
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CN103247337A (zh
Inventor
吕函庭
郭明昌
谢志昌
张国彬
萧逸璿
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Macronix International Co Ltd
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Macronix International Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/458,975 external-priority patent/US8824212B2/en
Application filed by Macronix International Co Ltd filed Critical Macronix International Co Ltd
Publication of CN103247337A publication Critical patent/CN103247337A/zh
Application granted granted Critical
Publication of CN103247337B publication Critical patent/CN103247337B/zh
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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H10D30/6893—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode wherein the floating gate has multiple non-connected parts, e.g. multi-particle floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/18—Bit line organisation; Bit line lay-out
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/14—Word line organisation; Word line lay-out
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
    • H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0413—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having charge-trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/037—Manufacture or treatment of data-storage electrodes comprising charge-trapping insulators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
CN201310046386.5A 2012-02-09 2013-02-05 具有分段字线的热辅助闪存 Active CN103247337B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US201261596886P 2012-02-09 2012-02-09
US61/596,886 2012-02-09
US201261603810P 2012-02-27 2012-02-27
US61/603,810 2012-02-27
US13/458,975 US8824212B2 (en) 2011-05-02 2012-04-27 Thermally assisted flash memory with segmented word lines
US13/458,975 2012-04-27

Publications (2)

Publication Number Publication Date
CN103247337A CN103247337A (zh) 2013-08-14
CN103247337B true CN103247337B (zh) 2017-06-09

Family

ID=47747405

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310046386.5A Active CN103247337B (zh) 2012-02-09 2013-02-05 具有分段字线的热辅助闪存

Country Status (5)

Country Link
EP (1) EP2626903B1 (enExample)
JP (1) JP6099419B2 (enExample)
KR (1) KR102007272B1 (enExample)
CN (1) CN103247337B (enExample)
TW (1) TWI514387B (enExample)

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US9666593B2 (en) 2014-09-29 2017-05-30 Sandisk Technologies Llc Alternating refractive index in charge-trapping film in three-dimensional memory
JP2017011123A (ja) 2015-06-23 2017-01-12 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の駆動方法
TWI564893B (zh) * 2015-06-30 2017-01-01 財團法人工業技術研究院 記憶體控制方法及其系統
CN115019859B (zh) * 2015-11-25 2023-10-31 日升存储公司 存储器结构
US9570192B1 (en) * 2016-03-04 2017-02-14 Qualcomm Incorporated System and method for reducing programming voltage stress on memory cell devices
US9773553B1 (en) * 2016-08-19 2017-09-26 Micron Technology, Inc. Segmented memory and operation
US10014390B1 (en) 2017-10-10 2018-07-03 Globalfoundries Inc. Inner spacer formation for nanosheet field-effect transistors with tall suspensions
US11538523B2 (en) * 2018-08-17 2022-12-27 Tetramem Inc. Crossbar array with reduced disturbance
KR102766456B1 (ko) * 2019-06-21 2025-02-12 에스케이하이닉스 주식회사 리드 디스터번스를 완화시킬 수 있는 비휘발성 메모리 장치 및 이를 이용하는 시스템
US11557341B2 (en) * 2019-12-27 2023-01-17 Micron Technology, Inc. Memory array structures and methods for determination of resistive characteristics of access lines
CN113946178B (zh) * 2020-07-15 2023-04-28 上海江波龙微电子技术有限公司 存储器及其偏置电压产生电路、方法
US12385788B2 (en) 2020-11-30 2025-08-12 Stmicroelectronics S.R.L. Thermographic sensor with thermal transistors driven by thermo-couples
US12094549B2 (en) * 2021-09-01 2024-09-17 Micron Technology, Inc. Defect detection during erase operations
US12156472B2 (en) * 2021-09-02 2024-11-26 Micron Technology, Inc. Power regeneration in a memory device
US11818886B2 (en) * 2021-09-29 2023-11-14 International Business Machines Corporation Low program voltage flash memory cells with embedded heater in the control gate
CN114093829B (zh) * 2021-11-02 2026-01-16 中国科学院微电子研究所 一种存储单元、三维存储器及其操作方法
US20240421032A1 (en) * 2021-11-02 2024-12-19 Institute of Microelectronics, Chinese Academy of Sciences Memory cell, three-dimensional memory, and method of operating three-dimensional memory
US20240324225A1 (en) * 2023-03-20 2024-09-26 Ememory Technology Inc. Storage transistor of charge-trapping non-volatile memory
KR20260000395A (ko) * 2024-06-25 2026-01-02 삼성전자주식회사 메모리 장치 및 이의 동작 방법

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100589569B1 (ko) * 2001-07-17 2006-06-19 산요덴키가부시키가이샤 반도체 메모리 장치
US6911704B2 (en) * 2003-10-14 2005-06-28 Advanced Micro Devices, Inc. Memory cell array with staggered local inter-connect structure
US7315474B2 (en) 2005-01-03 2008-01-01 Macronix International Co., Ltd Non-volatile memory cells, memory arrays including the same and methods of operating cells and arrays
US7301818B2 (en) * 2005-09-12 2007-11-27 Macronix International Co., Ltd. Hole annealing methods of non-volatile memory cells
JP4907173B2 (ja) * 2006-01-05 2012-03-28 マクロニクス インターナショナル カンパニー リミテッド 不揮発性メモリセル、これを有するメモリアレイ、並びに、セル及びアレイの操作方法
US7382654B2 (en) 2006-03-31 2008-06-03 Macronix International Co., Ltd. Trapping storage flash memory cell structure with inversion source and drain regions
US7391652B2 (en) * 2006-05-05 2008-06-24 Macronix International Co., Ltd. Method of programming and erasing a p-channel BE-SONOS NAND flash memory
US7646664B2 (en) * 2006-10-09 2010-01-12 Samsung Electronics Co., Ltd. Semiconductor device with three-dimensional array structure
US8344475B2 (en) * 2006-11-29 2013-01-01 Rambus Inc. Integrated circuit heating to effect in-situ annealing
US20100025811A1 (en) * 2006-11-29 2010-02-04 Gary Bronner Integrated circuit with built-in heating circuitry to reverse operational degeneration
KR20090037690A (ko) 2007-10-12 2009-04-16 삼성전자주식회사 비휘발성 메모리 소자, 그 동작 방법 및 그 제조 방법
EP2467855A4 (en) * 2009-08-21 2013-08-21 Rambus Inc LOCAL SPEICHERAUFGLÜHUNG
KR101060899B1 (ko) * 2009-12-23 2011-08-30 주식회사 하이닉스반도체 반도체 메모리 장치 및 이의 동작 방법

Also Published As

Publication number Publication date
TWI514387B (zh) 2015-12-21
KR102007272B1 (ko) 2019-08-05
JP6099419B2 (ja) 2017-03-22
CN103247337A (zh) 2013-08-14
TW201346913A (zh) 2013-11-16
KR20130092472A (ko) 2013-08-20
JP2013168209A (ja) 2013-08-29
EP2626903B1 (en) 2016-09-14
EP2626903A1 (en) 2013-08-14

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