CN103243381A - Secondary feeding device and method of single crystal furnace - Google Patents
Secondary feeding device and method of single crystal furnace Download PDFInfo
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- CN103243381A CN103243381A CN 201310193424 CN201310193424A CN103243381A CN 103243381 A CN103243381 A CN 103243381A CN 201310193424 CN201310193424 CN 201310193424 CN 201310193424 A CN201310193424 A CN 201310193424A CN 103243381 A CN103243381 A CN 103243381A
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Abstract
The invention relates to a secondary feeding device and method of a single crystal furnace. The device comprises a hanging disk, wherein a plurality of hooks are arranged at the upper part of the hanging disk. A plurality of sets of silicon slice material layers are arranged on the feeding device, wherein the silicon slice materials at the most upper layer of the plurality of sets of silicon slice material layers include long silicon slice materials and short silicon slice materials and are connected by using horizontal connecting components with high-temperature resistance and connected with the hanging disk through vertical connecting components with the high-temperature resistance; the silicon slice materials at the rest of layers are connected through silicon pins; the rest of the silicon slice material layers are connected through the silicon slice materials; and the long silicon slice materials in the silicon slice materials are connected between the two layers of the silicon slice materials. The device and the method provided by the invention are capable of directly utilizing the slice-shaped silicon materials, free of vessel pollution, low in cost and convenient to operate, wherein a quartz crucible can be utilized fully; and the materials can be fed repeatedly according to the condition of the quartz crucible. After the materials are fed twice, the cost of the quartz crucible can be lowered by more than 50%. Therefore, the production efficiency is improved greatly; and the production cost is lowered greatly. In addition, the operation is simple.
Description
Technical field
The present invention relates to a kind of feeding device and charging process, relate in particular to and a kind ofly can directly use sheet bulk silicon material, no capsule contamination, lower and easy to operate single crystal growing furnace secondary charging device and the charging process of cost.
Background technology
Single crystal growing furnace is the production equipment of producing the employed silicon single crystal of solar battery sheet.Its operating process is: feed, find time, melt, seeding, shouldering, isometrical, ending, blowing out; Its production process is under the vacuum argon gas, behind the filling solid state si raw material, by heating the silicon material is melted in quartz crucible, and by the rotation of seed crystal and the tension force between the liquid, and upwards monocrystalline is made in lifting.At present, disposable feed way is adopted in crystal pulling basically, namely fills it up with the silicon material once in quartz crucible before heating, because the shape of silicon material, not of uniform size, very most space can be caused when in quartz crucible, holding the silicon material, thereby the useful space of quartz crucible can not be taken full advantage of.In addition, quartz crucible top also remains bigger space after solid state si is melted, because liquid silicon is bigger than solid silicon density.Therefore, based on above-mentioned two kinds of reasons, still have ample space above the silicon material melts the back quartz crucible fully, quartz crucible is underutilized.Yet the monocrystalline amount that single quartz crucible is pulled out is few, and quartz crucible is namely scrapped after using once, and it accounts for significant proportion in the monocrystalline production cost, produces production cost height and the low phenomenon of production efficiency.In addition, though have part producer to realize the secondary charging of single crystal growing furnace at present, but because the secondary charging device mostly is external device (ED) or container type device, not only be subjected to the restriction of raw material size, can't directly use sheet bulk silicon material (solar energy single crystal flaw-piece material is a kind of bulk silicon material), and exist in capsule contamination, the reinforced process easily stop up, the more high defective of feeding device cost, therefore, for overcoming above-mentioned defective, the need design is a kind of can directly use sheet bulk silicon material, no capsule contamination, the lower and easy to operate secondary charging device of cost.
Summary of the invention
At the problems referred to above, main purpose of the present invention is to provide a kind of can directly use sheet bulk silicon material, no capsule contamination, lower and easy to operate single crystal growing furnace secondary charging device and the charging process of cost.
The present invention solves above-mentioned technical problem by following technical proposals: a kind of single crystal growing furnace secondary charging device, described feeding device comprises hanging scaffold, the top of hanging scaffold is provided with a plurality of hooks, described feeding device is provided with the plural number cover silicon chip bed of material, the superiors' silicon chip material package is drawn together long silicon chip material and short silicon chip material in the plural number cover silicon chip bed of material, adopt high temperature resistant horizontal web member to connect between the superiors' silicon chip material, adopt high temperature resistant vertical web member to be connected between the superiors' silicon chip material and the hanging scaffold, connect by the silicon pin between the remainder layer silicon chip material, adopt silicon chip material itself to be connected between the remainder layer silicon chip bed of material and the layer, the long silicon chip material connection between the two-layer silicon chip material in the employing silicon chip material.
In specific embodiments of the invention: the number of plies of silicon chip material is two-layer, be respectively the upper and lower, the silicon chip material on upper strata is divided into long silicon chip material and short silicon chip material, the silicon chip material on upper strata and the silicon chip material of lower floor are connected by the long silicon chip material on upper strata, long silicon chip material gos deep into lower floor's silicon chip material, long silicon chip material passes a silicon pin near an end of lower floor's silicon chip material, silicon pin two ends connect in lower floor's silicon chip material respectively, the long silicon chip material on all upper stratas and the parallel placement of short silicon chip material, the long silicon chip material on all upper stratas is connected the molybdenum pin with short silicon chip material by one and links together, and it is vertical with the position of short silicon chip material with the long silicon chip material on all upper stratas to connect the molybdenum pin.
In specific embodiments of the invention: the length of the silicon chip material of lower floor is equally long.
In specific embodiments of the invention: the number of plies of silicon chip material is more than or equal to three layers.
In specific embodiments of the invention: the material of described silicon pin is silicon.
In specific embodiments of the invention: the number of described hook is three, and three hook annular spread are around hanging scaffold.
In specific embodiments of the invention: described high temperature resistant web member is molybdenum pin web member.
A kind of method of utilizing above-mentioned single crystal growing furnace secondary charging device to feed in raw material, described method comprises the steps:
(1), at first the single crystal growing furnace concubine is found time after the installation of silicon chip material, vacuum is evacuated to 1.2-1.8kpa and opens segregaion valve;
(2), segregaion valve opens the back and adjusts power to changing material power and the flaw-piece that descends carries out preheating to the heat shielding central position, be 8-10 minute warm up time;
(3), liquid level rises to 40-60mm place, heat shielding lower edge during preheating, set seed crystal speed after preheating is finished and be 50mm/min decline silicon material to the 20mm place stop of liquid level top after 1-3 minute decline silicon chip material to melt, begin melt, stop to descend when the connection molybdenum pin of feeding device drops to above 20mm place, heat shielding lower edge, the following 20mm place, crucible position to heat shielding lower edge of rising then carries out last melt.
In specific embodiments of the invention: vacuum is evacuated to 1.5kpa in the described step (1).
In specific embodiments of the invention: described method comprises that the silicon pin uses silicon single crystal processing, all incorporates the raw material the inside in reinforced process.
Positive progressive effect of the present invention is: single crystal growing furnace secondary charging device provided by the invention and charging process have the following advantages: the present invention can directly use sheet bulk silicon material (hereinafter to be referred as the silicon chip material), no capsule contamination, cost is lower and easy to operate, use this secondary charging device, quartz crucible is fully used, single disposable the increasing more than 35% of quartz crucible charge amount, and can repeat to feed in raw material according to the quartz crucible situation, twice reinforced back quartz crucible cost can reduce more than 50%, can significantly put forward the efficient of engaging in production, reduce production costs and simple to operate.
Description of drawings
Fig. 1 is the structural representation of single crystal growing furnace secondary charging device provided by the invention.
Fig. 2 is the vertical view of the structural representation of single crystal growing furnace secondary charging device provided by the invention.
Embodiment
Provide preferred embodiment of the present invention below in conjunction with accompanying drawing, to describe technical scheme of the present invention in detail.
Single crystal growing furnace secondary charging device provided by the invention comprises that hanging scaffold 1(is referring to Fig. 1 and 2), a kind of single crystal growing furnace secondary charging device, described feeding device comprises hanging scaffold, the top of hanging scaffold 1 is provided with a plurality of hooks 2, described feeding device is provided with the plural number cover silicon chip bed of material, the superiors' silicon chip material 5 comprises long silicon chip material 51 and short silicon chip material 52 in the plural number cover silicon chip bed of material, adopt high temperature resistant horizontal web member 4 to connect between the superiors' silicon chip material 5, adopt high temperature resistant vertical 3 web members to be connected between the superiors' silicon chip material 5 and the hanging scaffold 1, connect by silicon pin 7 between the remainder layer silicon chip material 5, adopt silicon chip material itself to be connected between the remainder layer silicon chip bed of material and the layer, the long silicon chip material connection between the two-layer silicon chip material 5 in the employing silicon chip material.
Fig. 1 and 2 is the synoptic diagram of specific embodiment, Fig. 1 is the structural representation of single crystal growing furnace secondary charging device provided by the invention, Fig. 2 is the vertical view of the structural representation of single crystal growing furnace secondary charging device provided by the invention, shown in Fig. 1-2: the number of plies of single crystal growing furnace secondary charging device silicon chip material provided by the invention is two-layer, be respectively the upper and lower, the silicon chip material 5 on upper strata is divided into long silicon chip material 51 and short silicon chip material 52, the silicon chip material 5 on upper strata and the silicon chip material 6 of lower floor are connected by the long silicon chip material 51 on upper strata, the long silicon chip material 51 on upper strata gos deep into lower floor's silicon chip material 6, long silicon chip material 51 passes a silicon pin 7 near an end of lower floor's silicon chip material, silicon pin 7 two ends connect in lower floor's silicon chip material 6 respectively, the long silicon chip material 51 on all upper stratas and the 52 parallel placements of short silicon chip material, the long silicon chip material 51 on all upper stratas is connected molybdenum pin 4 with short silicon chip material 52 by one and links together, connect the long silicon chip material on molybdenum pin 4 and all upper stratas and lack the position of silicon chip material vertical, between connection molybdenum pin 4 and the hanging scaffold 1 by being connected molybdenum sheet 3 connections.The length of the silicon chip material 6 of lower floor is equally long.
The number of plies of silicon chip material also can be more than or equal to three layers, how many suitable increases of melt or reduce the number of plies as required, and in the present invention, silicon pin 7 silicon pins use silicon single crystal processing, all incorporate the raw material the inside in reinforced process.
In the present invention, the number of hook 2 is two or more, and all link up with 2 annular spread around hanging scaffold 1.
Below be the method that single crystal growing furnace secondary charging device feeds in raw material, this method comprises the steps:
(1), at first the single crystal growing furnace concubine is found time after the installation of silicon chip material, vacuum is evacuated to 1.2-1.8kpa, is preferably 1.5kpa, opens segregaion valve;
(2), segregaion valve opens the back and adjusts power to changing material power and the flaw-piece that descends carries out preheating to the heat shielding central position, be 8-10 minute warm up time;
(3), liquid level rises to 40-60mm place, heat shielding lower edge during preheating, set seed crystal speed after preheating is finished and be 50mm/min decline silicon material to the 20mm place stop of liquid level top after 1-3 minute decline silicon chip material to melt, begin melt, stop to descend when the connection molybdenum pin of feeding device drops to above 20mm place, heat shielding lower edge, the following 20mm place, crucible position to heat shielding lower edge of rising then carries out last melt.
More than show and described ultimate principle of the present invention and principal character and advantage of the present invention.The technician of the industry should understand; the present invention is not restricted to the described embodiments; that describes in above-described embodiment and the specification sheets just illustrates principle of the present invention; without departing from the spirit and scope of the present invention; the present invention also has various changes and modifications; these changes and improvements all fall in the claimed scope of the invention, and the claimed scope of the present invention is defined by appending claims and equivalent thereof.
Claims (10)
1. single crystal growing furnace secondary charging device, it is characterized in that: described feeding device comprises hanging scaffold, the top of hanging scaffold is provided with a plurality of hooks, described feeding device is provided with the plural number cover silicon chip bed of material, the superiors' silicon chip material package is drawn together long silicon chip material and short silicon chip material in the plural number cover silicon chip bed of material, adopt high temperature resistant horizontal web member to connect between the superiors' silicon chip material, adopt high temperature resistant vertical web member to be connected between the superiors' silicon chip material and the hanging scaffold, connect by the silicon pin between the remainder layer silicon chip material, adopt silicon chip material itself to be connected between the remainder layer silicon chip bed of material and the layer, the long silicon chip material connection between the two-layer silicon chip material in the employing silicon chip material.
2. single crystal growing furnace secondary charging device according to claim 1, it is characterized in that: the number of plies of silicon chip material is two-layer, be respectively the upper and lower, the silicon chip material on upper strata is divided into long silicon chip material and short silicon chip material, the silicon chip material on upper strata and the silicon chip material of lower floor are connected by the long silicon chip material on upper strata, long silicon chip material gos deep into lower floor's silicon chip material, long silicon chip material passes a silicon pin near an end of lower floor's silicon chip material, silicon pin two ends connect in lower floor's silicon chip material respectively, the long silicon chip material on all upper stratas and the parallel placement of short silicon chip material, the long silicon chip material on all upper stratas is connected the molybdenum pin with short silicon chip material by one and links together, and it is vertical with the position of short silicon chip material with the long silicon chip material on all upper stratas to connect the molybdenum pin.
3. single crystal growing furnace secondary charging device according to claim 2, it is characterized in that: the length of the silicon chip material of lower floor is equally long.
4. single crystal growing furnace secondary charging device according to claim 1 is characterized in that: the number of plies of silicon chip material is for more than or equal to three layers.
5. single crystal growing furnace secondary charging device according to claim 1, it is characterized in that: the material of described silicon pin is silicon.
6. single crystal growing furnace secondary charging device according to claim 1, it is characterized in that: the number of described hook is three, three hook annular spread are around hanging scaffold.
7. single crystal growing furnace secondary charging device according to claim 1, it is characterized in that: described high temperature resistant web member is molybdenum pin web member.
8. method of utilizing the described single crystal growing furnace secondary charging of one of claim 1-7 device to feed in raw material, it is characterized in that: described method comprises the steps:
(1), at first the single crystal growing furnace concubine is found time after the installation of silicon chip material, vacuum is evacuated to 1.2-1.8kpa and opens segregaion valve;
(2), segregaion valve opens the back and adjusts power to changing material power and the flaw-piece that descends carries out preheating to the heat shielding central position, be 8-10 minute warm up time;
(3), liquid level rises to 40-60mm place, heat shielding lower edge during preheating, set seed crystal speed after preheating is finished and be 50mm/min decline silicon material to the 20mm place stop of liquid level top after 1-3 minute decline silicon chip material to melt, begin melt, stop to descend when the connection molybdenum pin of feeding device drops to above 20mm place, heat shielding lower edge, the following 20mm place, crucible position to heat shielding lower edge of rising then carries out last melt.
9. method according to claim 8 is characterized in that: vacuum is evacuated to 1.5kpa in the described step (1).
10. method according to claim 8 is characterized in that: described method comprises that the silicon pin uses silicon single crystal processing, all incorporates the raw material the inside in reinforced process.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106119952A (en) * | 2016-09-15 | 2016-11-16 | 保定爱廸新能源股份有限公司 | A kind of single crystal growing furnace secondary charging method |
| CN107604446A (en) * | 2017-10-25 | 2018-01-19 | 宁晋晶兴电子材料有限公司 | A kind of new melting epidermis material structure and its melting method |
| CN111334851A (en) * | 2018-12-18 | 2020-06-26 | 有研半导体材料有限公司 | Polysilicon material recharging method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| GB2126417A (en) * | 1982-08-26 | 1984-03-21 | Heraeus Schott Quarzschmelze | Support systems for conveying semiconductor devices into hostile environments during manufacture |
| CN101387005B (en) * | 2008-10-14 | 2011-03-30 | 浙江华友电子有限公司 | Material feeder for single crystal furnace |
| CN101403136B (en) * | 2008-11-07 | 2010-09-08 | 王飞 | Continuous feeding apparatus of silicon monocrystal stove and silicon monocrystal stove equipped with the same |
| CN201506846U (en) * | 2009-10-16 | 2010-06-16 | 常州天合光能有限公司 | Secondary charging circular-rod fixture for monocrystalline furnace |
| CN202148365U (en) * | 2011-07-28 | 2012-02-22 | 江苏兆晶光电科技发展有限公司 | Single crystal furnace with secondary feeding device in straight-pulling single crystal silicon preparation |
| CN202671707U (en) * | 2012-05-07 | 2013-01-16 | 常州顺风光电材料有限公司 | Secondary feeding device for vertical pulling silicon monocrystal |
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2013
- 2013-05-23 CN CN201310193424.XA patent/CN103243381B/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106119952A (en) * | 2016-09-15 | 2016-11-16 | 保定爱廸新能源股份有限公司 | A kind of single crystal growing furnace secondary charging method |
| CN107604446A (en) * | 2017-10-25 | 2018-01-19 | 宁晋晶兴电子材料有限公司 | A kind of new melting epidermis material structure and its melting method |
| CN111334851A (en) * | 2018-12-18 | 2020-06-26 | 有研半导体材料有限公司 | Polysilicon material recharging method |
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| CN103243381B (en) | 2015-06-24 |
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