CN107604446A - A kind of new melting epidermis material structure and its melting method - Google Patents
A kind of new melting epidermis material structure and its melting method Download PDFInfo
- Publication number
- CN107604446A CN107604446A CN201711006709.2A CN201711006709A CN107604446A CN 107604446 A CN107604446 A CN 107604446A CN 201711006709 A CN201711006709 A CN 201711006709A CN 107604446 A CN107604446 A CN 107604446A
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- China
- Prior art keywords
- epidermis material
- strip hole
- epidermis
- main body
- melting
- Prior art date
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- 239000000463 material Substances 0.000 title claims abstract description 87
- 210000002615 epidermis Anatomy 0.000 title claims abstract description 86
- 238000002844 melting Methods 0.000 title claims abstract description 25
- 230000008018 melting Effects 0.000 title claims abstract description 25
- 238000000034 method Methods 0.000 title claims abstract description 12
- 230000005484 gravity Effects 0.000 claims abstract description 11
- 239000013078 crystal Substances 0.000 claims description 10
- 239000003513 alkali Substances 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 9
- 238000004140 cleaning Methods 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 238000005520 cutting process Methods 0.000 claims description 3
- 238000007654 immersion Methods 0.000 claims description 3
- 239000012466 permeate Substances 0.000 claims description 3
- 238000005406 washing Methods 0.000 claims description 3
- 238000005253 cladding Methods 0.000 claims 1
- 238000003723 Smelting Methods 0.000 abstract description 4
- 238000010309 melting process Methods 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000003574 free electron Substances 0.000 abstract 1
- 230000004927 fusion Effects 0.000 abstract 1
- 239000002585 base Substances 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
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- Sampling And Sample Adjustment (AREA)
Abstract
The invention discloses a kind of new melting epidermis material structure and its melting method, employ new smelting process, the sliding fusion production technology of center of gravity in collocation melting process, overall flow is in harmony certainly, the present apparatus is in use, the integrally-built free degree can be substantially increased with free-electron model, manpower and equipment cost has been liberated, has reduced potential safety hazard.
Description
Technical field
The invention belongs to silicon wafer unit style for technology field, more particularly to a kind of epidermis material and its epidermis for being easy to melting
The melting method of material.
Background technology
Silicon rod can slough off lower substantial amounts of corner epidermis material in preparation of the production process, during butt step, and epidermis material is bar shape,
Epidermis material is in the nature that the monocrystalline silicon that melting finishes can recycle again, therefore epidermis material may be repeated melting, with
Past smelting process is all to use, fixed, i.e., silicon material is fixed on a fixture block, and fixture block unclamps silicon material and come off and melts automatically
Melt, but such a smelting process carries out constantly judging that detection energy consumption is larger firstly the need of equipment, and it also requires operating personnel stay
The heart is observed, and surface metal particle eliminating ability difference easily pollutes to raw material.
The content of the invention
For the present invention for falling behind in the prior art to the processing mode of silicon material, manpower and time cost are higher, so providing
A kind of new epidermis material structure and smelting process, its without supervision, in melting process free falling melt, it is time saving and energy saving.
A kind of new melting epidermis material structure, it includes the epidermis material main body extended vertically, along epidermis material main body
Center line is provided with strip hole, point on the basis of the central point of epidermis material main body, and the central point of strip hole falls a little and base to fall a little
On schedule on same vertical curve, fall a little below datum mark, fall a little width for being smaller than strip hole with datum mark
Degree.
Further, the both ends of strip hole are nock end.
Further, the length of described strip hole is identical with the width of epidermis material main body.
Further, epidermis material main body is bar shape, and the length of described strip hole is identical with the width of epidermis material main body.
Further, the number of described epidermis material main body is multiple that horizontal-extending load bar passes through multiple epidermis material masters
The strip hole of body.
A kind of new melting epidermis material method, it comprises the following steps,
1. perforate, taking multiple epidermis material, each that epidermis material is horizontal positioned, setting positions base first on each epidermis material
Standard, and use boring bar tool drills through the nock of two faces, uses cutting tool to reject the strip hole between two nocks to incite somebody to action
Two nocks connect to form strip hole；
2. slightly washing, epidermis material main body is carried out using shower water to dry after hydro-peening；
3. alkali cleaning, epidermis material main body being inserted in alkali wash water and soaked, 3h is often greater than during immersion, is rinsed after the completion of alkali cleaning
Drying；
4. assembling, each epidermis material is vertically arranged, and using the strip hole opened up on load bar permeate through epidermis material, bar will be carried on a shoulder pole
It is fitted in single crystal growing furnace；
5. melting, start single crystal growing furnace and start stepped heating, gradually melted in single crystal growing furnace temp.-increasing heating process mesocuticle material bottom
Melt, now the center of gravity of epidermis material starts to be gradually increasing, heavy with the center of strip hole during the center of gravity of epidermis material gradually moves up
During conjunction, epidermis material starts to tilt, and when the center of gravity of epidermis material is higher than the center of strip hole, epidermis material falls automatically.
Further, described epidermis material is before step is 2., it is also necessary to is heated at high temperature, temperature is 500 DEG C, high temperature
Quickly remove and sprayed after the completion of heating.
The present invention has the advantages that compared with prior art：
New perforate skill is employed, employs strip hole as hanging hole, the strip hole opened up is located on center line,
The elevated principle of epidermis material center of gravity is cleverly make use of in melting process so that epidermis material automatic turning in melting process falls,
Without artificially interfering, without additional automation component, melting works well.
The clamp device in existing equipment and various supplementary structures are eliminated, reduces equipment complexity, so as to reduce
Fault rate, the structure weeded out can reduce production cost and the energy resource consumption of single crystal growing furnace.
Employ it is suitably sized design length-width ratio and area ratio between it is reasonable in design, power transmission chain connects each other each other, tool
Standby good continuity.
Brief description of the drawings
Fig. 1 is the facing structure figure of the present invention；
Fig. 2 is side block diagram of the present invention；
Description of reference numerals：Epidermis material main body 1, strip hole 2, load bar 3；
Embodiment
The present invention is described in further details below in conjunction with accompanying drawing 1-2.
A kind of new melting epidermis material structure is provided, it includes the epidermis material main body extended vertically, along epidermis material
The center line of main body is provided with strip hole, and the both ends of strip hole are nock end, point on the basis of the central point of epidermis material main body, strip hole
Central point to fall a little, fall and a little be located at datum mark on same vertical curve, fall and a little be located at datum mark lower section, fall a little and
The width for being smaller than strip hole of datum mark, the length of described strip hole is identical with the width of epidermis material main body, described
The number of epidermis material main body is the strip hole that multiple, horizontal-extending load bars passes through multiple epidermis material main bodys, and epidermis material main body is
Bar shape, the length of described strip hole are identical with the width of epidermis material main body.The area of strip hole and the face of epidermis material main body
Long-pending ratio is
Provide a kind of new melting epidermis material method, it is characterised in that：Comprise the following steps,
1. perforate, taking multiple epidermis material, each that epidermis material is horizontal positioned, setting positions base first on each epidermis material
Standard, and use boring bar tool drills through the nock of two faces, uses cutting tool to reject the strip hole between two nocks to incite somebody to action
Two nocks connect to form strip hole；
2. slightly washing, it is heated at high temperature, temperature is 500 DEG C, quickly removes and is sprayed after the completion of high-temperature heating, has been sprayed
Bi Hou, insert using in sound wave high-frequency cleaning machine carry out high frequency cleaning, using shower water to epidermis material main body carry out hydro-peening after
Dry；
3. alkali cleaning, epidermis material main body being inserted in alkali wash water and soaked, 3h is often greater than during immersion, is rinsed after the completion of alkali cleaning
Drying；
4. assembling, each epidermis material is vertically arranged, and using the strip hole opened up on load bar permeate through epidermis material, bar will be carried on a shoulder pole
It is fitted in single crystal growing furnace；
5. melting, start single crystal growing furnace and start stepped heating, gradually melted in single crystal growing furnace temp.-increasing heating process mesocuticle material bottom
Melt, now the center of gravity of epidermis material starts to be gradually increasing, heavy with the center of strip hole during the center of gravity of epidermis material gradually moves up
During conjunction, epidermis material starts to tilt, and synchronous axial system, and when the center of gravity of epidermis material is higher than the center of strip hole, epidermis material is automatic
Fall.
Claims (7)
- A kind of 1. new melting epidermis material structure, it is characterised in that：Including the epidermis material main body (1) extended vertically, along table The center line of cladding main body is provided with strip hole, point on the basis of the central point of epidermis material main body, and the central point of strip hole (2) is falls Point, fall and be a little located at datum mark on same vertical curve, fall a little positioned at datum mark lower section, fall a little small with the spacing of datum mark In the width of strip hole.
- A kind of 2. new melting epidermis material structure according to claim 1, it is characterised in that：The both ends of strip hole are arc Mouth end.
- A kind of 3. new melting epidermis material structure according to claim 1, it is characterised in that：The length of described strip hole Degree is identical with the width of epidermis material main body.
- A kind of 4. new melting epidermis material structure according to claim 1, it is characterised in that：Epidermis material main body is bar shaped Body, the length of described strip hole are identical with the width of epidermis material main body.
- A kind of 5. new melting epidermis material structure according to claim 1, it is characterised in that：Described epidermis material main body Number to be multiple, horizontal-extending load bars (3) pass through the strip hole of multiple epidermis material main bodys.
- A kind of 6. new melting epidermis material method, it is characterised in that：Comprise the following steps,1. perforate, multiple epidermis material are taken, it is each that epidermis material is horizontal positioned, positioning datum is set first on each epidermis material, And the nock of two faces is drilled through using boring bar tool, use cutting tool to reject the strip hole between two nocks with by two Nock connects to form strip hole；2. slightly washing, epidermis material main body is carried out using shower water to dry after hydro-peening；3. alkali cleaning, epidermis material main body being inserted in alkali wash water and soaked, 3h is often greater than during immersion, is rinsed and is dried after the completion of alkali cleaning It is dry；4. assembling, each epidermis material is vertically arranged, and using the strip hole opened up on load bar permeate through epidermis material, load bar be equipped with In single crystal growing furnace；5. melting, start single crystal growing furnace and start stepped heating, gradually melted in single crystal growing furnace temp.-increasing heating process mesocuticle material bottom, this When epidermis material center of gravity start to be gradually increasing, when center superposition with strip hole during the center of gravity of epidermis material gradually moves up, Epidermis material starts to tilt, and when the center of gravity of epidermis material is higher than the center of strip hole, epidermis material falls automatically.
- A kind of 7. new melting epidermis material method according to claim 6, it is characterised in that：Described epidermis material is in step Suddenly 2. before, it is also necessary to be heated at high temperature, temperature be 500 DEG C, quickly remove and sprayed after the completion of high-temperature heating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711006709.2A CN107604446A (en) | 2017-10-25 | 2017-10-25 | A kind of new melting epidermis material structure and its melting method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711006709.2A CN107604446A (en) | 2017-10-25 | 2017-10-25 | A kind of new melting epidermis material structure and its melting method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107604446A true CN107604446A (en) | 2018-01-19 |
Family
ID=61079306
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711006709.2A Pending CN107604446A (en) | 2017-10-25 | 2017-10-25 | A kind of new melting epidermis material structure and its melting method |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5588993A (en) * | 1995-07-25 | 1996-12-31 | Memc Electronic Materials, Inc. | Method for preparing molten silicon melt from polycrystalline silicon charge |
| US5814148A (en) * | 1996-02-01 | 1998-09-29 | Memc Electronic Materials, Inc. | Method for preparing molten silicon melt from polycrystalline silicon charge |
| US6454851B1 (en) * | 2000-11-09 | 2002-09-24 | Memc Electronic Materials, Inc. | Method for preparing molten silicon melt from polycrystalline silicon charge |
| CN103243381A (en) * | 2013-05-23 | 2013-08-14 | 上海九晶电子材料股份有限公司 | Secondary feeding device and method of single crystal furnace |
| CN104862778A (en) * | 2015-06-16 | 2015-08-26 | 江苏协鑫硅材料科技发展有限公司 | Preparation method of polycrystalline silicon ingot, polycrystalline silicon ingot and polycrystalline silicon wafer |
-
2017
- 2017-10-25 CN CN201711006709.2A patent/CN107604446A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5588993A (en) * | 1995-07-25 | 1996-12-31 | Memc Electronic Materials, Inc. | Method for preparing molten silicon melt from polycrystalline silicon charge |
| US5814148A (en) * | 1996-02-01 | 1998-09-29 | Memc Electronic Materials, Inc. | Method for preparing molten silicon melt from polycrystalline silicon charge |
| US6454851B1 (en) * | 2000-11-09 | 2002-09-24 | Memc Electronic Materials, Inc. | Method for preparing molten silicon melt from polycrystalline silicon charge |
| CN103243381A (en) * | 2013-05-23 | 2013-08-14 | 上海九晶电子材料股份有限公司 | Secondary feeding device and method of single crystal furnace |
| CN104862778A (en) * | 2015-06-16 | 2015-08-26 | 江苏协鑫硅材料科技发展有限公司 | Preparation method of polycrystalline silicon ingot, polycrystalline silicon ingot and polycrystalline silicon wafer |
Non-Patent Citations (1)
| Title |
|---|
| 王新海;张永军;李俊涛;宗红梅;: "单晶炉二次增料装置结构的改进" * |
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Application publication date: 20180119 |
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