CN111334851A

CN111334851A - Polysilicon material recharging method

Info

Publication number: CN111334851A
Application number: CN201811551787.5A
Authority: CN
Inventors: 王雅楠; 刘卓; 李亚光; 盖晶虎; 秦瑞锋
Original assignee: Grinm Semiconductor Materials Co Ltd
Current assignee: Grinm Semiconductor Materials Co Ltd
Priority date: 2018-12-18
Filing date: 2018-12-18
Publication date: 2020-06-26

Abstract

The invention discloses a polysilicon material recharging method, which comprises the following steps: (1) processing the head and tail materials into silicon materials with standardized shapes, and punching holes at specified positions of the silicon materials; (2) manufacturing a silicon pin by using a single crystal as a raw material; (3) sequentially connecting silicon materials in series through silicon pins to form a suspension material; (4) the top of the suspension material is connected with a cable joint of the single crystal furnace through a metal pin; (5) after the polycrystalline material in the quartz crucible is basically melted, the suspension material is slowly fed into the melt for melting, and then the feeding is finished. The invention effectively utilizes the single crystal head tailing (cut off), and increases the charging amount of the quartz crucible by processing the single crystal head tailing into a certain shape and connecting the single crystal head tailing in series into a suspension material for recharging, thereby saving the cost for manufacturing the graphite piece. The invention can be produced and processed in a large scale, does not need a special graphite device, and is convenient and safe to feed.

Description

Polysilicon material recharging method

Technical Field

The invention relates to a polysilicon material recharging method, and belongs to the technical field of semiconductor materials.

Background

The Czochralski single crystal manufacturing method is a main production method of a silicon rod of a semiconductor single crystal, wherein a polycrystal material and a quartz crucible are main raw materials for producing the semiconductor single crystal. Due to the limitation of the size of the thermal field, the polycrystalline material contained in a quartz crucible is very limited, and normally, the solid polycrystalline material contained in the quartz crucible can only reach 65% of the target value. In order to reduce the cost and increase the yield, the rest polycrystalline material needs to be added into the quartz crucible through various methods, and the crushed material is generally added.

And the mode of adding crushed aggregates again to supplement polycrystalline materials needs a special feeding device, and the feeding device is generally a graphite device, so that on one hand, the cost of the crushed aggregates is higher, and on the other hand, the cost of the required graphite device is also higher.

Disclosure of Invention

The invention aims to provide a polycrystalline silicon material recharging method which can greatly reduce the cost of recharging polycrystalline materials and is simple to operate, convenient and safe to recharge.

In order to achieve the purpose, the invention adopts the following technical scheme:

a polysilicon material recharging method comprises the following steps:

(1) processing the head and tail materials into silicon materials with standardized shapes, and punching holes at specified positions of the silicon materials;

(2) manufacturing a silicon pin by using a single crystal as a raw material;

(3) when the material is to be fed roughly, the upper furnace chamber and the lower furnace chamber are separated, the seed crystal chuck is taken down, and silicon materials are sequentially connected in series through silicon pins to form a suspension material;

(4) the top of the suspension material is connected with a cable joint of the single crystal furnace through a metal pin;

(5) after the polycrystalline material in the quartz crucible is basically melted, the suspension material is slowly fed into the melt for melting, and then the feeding is finished.

Wherein the head tailing is single crystal head tailing.

The shape of the silicon material can be cuboid, the size of the silicon material can be determined according to the requirement of a thermal field, the silicon material can be generally designed to be A4 paper, and the thickness of the silicon material is 15mm-25 mm; two holes are processed at two ends of the silicon material, and the holes are square holes or round holes.

The silicon pin is made of monocrystalline silicon.

The invention has the advantages that:

the invention effectively utilizes the single crystal head tailing (cut off), and increases the charging amount of the quartz crucible by processing the single crystal head tailing into a certain shape and connecting the single crystal head tailing in series into a suspension material for recharging, thereby saving the cost for manufacturing the graphite piece.

The invention can be produced and processed in a large scale, does not need a special graphite device, and is convenient and safe to feed.

Drawings

Fig. 1 is a schematic structural view of a suspension used in an embodiment of the present invention.

Fig. 2 is a cross-sectional view of fig. 1.

Detailed Description

The present invention will be further described with reference to the accompanying drawings, but the embodiments of the present invention are not limited thereto.

In one embodiment of the present invention, the suspension material is prepared by processing the single crystal head and tail material. The preparation process of the suspension material comprises the following steps: firstly, processing a head material and a tail material of a single crystal into a silicon material with a standardized shape, and punching holes at two ends of the silicon material; the processed head and tail materials (silicon materials) are connected in series in sequence by using silicon pins made of monocrystalline silicon. As shown in figure 1, two silicon materials 5 positioned at the top are firstly connected with a cable joint 1 of a single crystal furnace through a metal pin 2, the top ends of three silicon materials 3 are connected with the bottom ends of the two silicon materials 5 in a clamping way through a silicon pin 4, and the silicon materials are arranged in the form of two-three-two-three … … in number. In this way, a suspension is formed, the specific length can be determined according to the furnace type.

As shown in FIG. 2, when the suspension is used for recharging, after the polycrystalline material in the quartz crucible 6 is substantially melted, the suspension is slowly fed into the melt and melted, thereby completing recharging. The melting process is similar to the melting process after the single crystal rod NG.

Claims

1. A method for recharging a polycrystalline silicon material is characterized by comprising the following steps:

(2) manufacturing a silicon pin by using a single crystal as a raw material;

(3) sequentially connecting silicon materials in series through silicon pins to form a suspension material;

2. A method of recharging a polycrystalline silicon charge as claimed in claim 1 wherein said head stock is a single crystal head stock.

3. A method of recharging a polycrystalline silicon material as claimed in claim 1 wherein said material is in the form of a rectangular parallelepiped having a size of a4 paper and a thickness of 15mm to 25 mm.

4. A method of recharging a polycrystalline silicon mass as claimed in claim 1 wherein two holes are machined in both ends of the silicon mass, the holes being square or round.

5. A method of recharging a polycrystalline silicon charge as claimed in claim 1 wherein the silicon pins are of single crystal silicon material.