CN103238210A - 金-铂-钯合金接合线 - Google Patents
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Abstract
本发明提供一种金-铂-钯合金系接合线,其为即便在使用不含卤素物质的环氧树脂的情况下,高温放置中的可靠性也高,也能够维持高温放置后的电特性,且与铝垫的连接可靠性优异面向车载的半导体用金-铂-钯合金系接合线。一种金-铂-钯合金接合线,其含有0.4~1.2质量%的铂、0.01~0.5质量%的钯、10~30质量ppm的铝、总计10~60质量ppm的钙或镁中的至少一种,剩余部分由纯度99.999质量%以上的金组成。
Description
技术领域
本发明涉及一种在用于半导体装置的IC芯片电极和外部引线等基板的连接中适合的金-铂-钯合金系接合线,尤其是涉及一种用于车载或用于高速器件的成为高温的环境下使用的无卤素环氧树脂密封用金-铂-钯合金系接合线。
背景技术
目前,作为在车载用途中要求高的接合可靠性的半导体装置的连接IC芯片电极和外部引线的金合金线,多用可靠性优异的在高纯度金中含有0.5~1.2质量%的钯的纯度99质量%左右的金-钯合金线。这种金合金线-端通过并用超声波的热压接引线接合法与IC芯片电极上的纯铝垫片或铝合金垫片连接,另-端与基板上外部引线等连接,然后,接合部位被环氧树脂密封,制成半导体装置。这种纯铝或铝合金垫片通常通过真空蒸镀等而形成。
就使用车载用半导体元件的环境条件而言,由于是在汽车的发动机室内或其附近使用,因此温度比通常的使用环境高。公知的是,现有高接合可靠性金-钯合金接合线在使用含有卤素物质的密封树脂时的高温放置试验(HTS)中,具有比由纯度99.99质量%以上金构成的纯金接合线高的接合可靠性。例如,需要经得起在175℃下使用2,000~4,000小时左右。在这种实际安装环境下,长期确保金-钯合金接合线和垫片电极部的接合强度尤为重要。作为这种接合线,已知含有0.5~0.7质量%的钯、0.1~0.3质量%的铂及剩余部分由纯度99.999质量%以上的金构成的、具备铝的金属或合金垫片的高温半导体装置用金合金接合线(专利文献1的权利要求1)或含有0.5~0.7质量%的钯、0.1~0.3质量%的铂及剩余部分由纯度99.999质量%以上的金构成的、具备铝的金属或合金垫片的高温半导体装置用金合金接合线(专利文献2的权利要求1)、或者在使用含有卤素的环氧树脂作为密封树脂的情况下,作为金合金细线,含有0.005~0.5重量%的锰、0.005~1.0重量%的钯、0.01~2.0重量%的铂、以及在总计为0.0005~0.05重量%的范围含有钙、铍、稀土元素中的至少一种的接合线(专利文献3的方案5)。
近年来,为了应对环境,多使用不含卤素物质的环氧密封树脂。在使用了该环氧密封树脂时的高温放置试验中,现有的高接合可靠性的金-钯合金接合线与99.99质量%的金接合线的接合可靠性相比较,有时显示不出优势,根据情况,有时金-钯合金接合线比纯金接合线的接合可靠性还差。
另外,在车载用IC封装中,在未进行树脂密封的半导体元件的高温放置试验中,通常施行屏蔽,在175℃×1000小时放置后进行拉伸试验。进行这种未密封高温放置试验的情况下,现有的高接合可靠性的金-钯合金接合线有时在早期就产生最初接合部的接合线和铝垫片的界面的劣化,出现高温接合可靠性比纯金接合线低的结果。
现有的高接合可靠性的金-钯合金线通过比铂更多地添加钯,由此控制铝垫片界面上的金-铝接合部的扩散,抑制成为熔融球的接合部劣化的原因的金属间化合物的生成。但是,若想抑制金属间化合物的生成,就要过度控制金-铝接合部的金和铝的扩散,因此不能充分确保由扩散所致的接合强度,认为在金-铝接合部会引起界面的劣化。由于这种情况,所以实情是金-钯合金系接合线在车载用IC封装体、使用有不含卤素物质的环氧密封树脂的半导体元件中不能实用化。
专利文献1:日本特开平09-321075号公报
专利文献2:日本特开2011-155129号公报
专利文献3:日本特开平10-303239号公报
发明内容
本发明的目的在于提供一种即使在高温、高湿及高压下的严酷的使用环境下使用已树脂密封的半导体装置,与铝垫片的连接可靠性也优异的、面向车载的半导体用的金-铂-钯合金系接合线。
另外,本发明的目的在于提供一种即使是使用不含溴等卤素物质的环氧树脂的情况下,高温放置中的可靠性也高、也能够维持高温放置后的电特性的、与铝垫片的连接可靠性优异的面向车载的半导体用的金-铂-钯合金系接合线。
本发明中,作为主要含有元素使金中含有比钯昂贵的铂1质量%左右以下,且作为辅助含有元素含有钯0.5质量%以下,由此适度地控制铝垫片界面上的金-Al接合部的扩散,同时即使是使用不含卤素物质的环氧树脂的情况下,也可抑制成为熔融球的接合部劣化的原因的金属间化合物的生成或者生长。认为现有金中含有1质量%左右的钯的接合线,由于过度控制与铝垫片的接合部的扩散,所以在高温放置(HTS)的情况下,特别是使用不含卤素物质的环氧树脂时,会引起在铝垫片界面的接合线的劣化。
另外,本发明人等向铝垫片中添加微量的铝,并且共添加钙或镁并使其微细地分散在金-铂-钯合金基质中,适度地控制铝垫片界面上的金-铝接合部的扩散,除此之外,不仅提高接合线的机械性能,并且提高了压接球的成圆性特性。接合线的机械性能及成圆性特性还可通过添加微量的铍或镧、铈等稀土元素来进一步提高。
用于解决本发明的课题的半导体元件用金-铂-钯合金系接合线之一,是含有0.4~1.2质量%的铂、0.01~0.5质量%的钯、10~30质量ppm的铝、以总计为10~60质量ppm的钙或镁中的至少一种及剩余部分由纯度99.999质量%以上的金构成的接合线。
另外,另一用于解决本发明的课题的半导体元件用金-铂-钯合金系接合线,是含有0.4~1.2质量%的铂、0.01~0.5质量%的钯、10~30质量ppm的铝,以总计为10~60质量ppm的钙或镁中的至少一种、以总计为1~30质量ppm的铍或稀土元素中的至少一种及剩余部分由纯度99.999质量%以上的金构成的接合线。
(金-铂-钯合金)
本发明的金-铂-钯合金为0.4~1.2质量%的铂、0.01~0.5质量%的钯及剩余部分由纯度99.999质量%以上的金构成的完全均匀地固溶而成的合金。
在本发明中,之所以将铂作为主元素、将钯作为辅助元素,是因为适度地控制与纯铝垫片或铝合金垫片的接合部的金和铝的扩散速度,由此抑制高温放置时的接合界面的劣化。
因此,设定为0.4~1.2质量%的铂、0.01~0.5质量%的钯。优选铂和钯的总计量为0.6~1.3质量%。
具体地说,分别优选铂为0.4~0.8质量%、钯为0.05~0.4质量%,更优选铂为0.5~0.7质量%、钯为0.1~0.3质量%。铂/钯之比优选为2~4的范围,更预选2.5~3.5的范围。
另外,在本发明中,之所以将剩余部分设定为纯度99.999质量%以上的金,是因为通过将不可避免的杂质的量设定为少于最大10质量ppm,更好地发挥铝及钙或镁等微量添加元素的效果。
在本发明中,将铝设定为10~30质量ppm。
通常,铝由于会和金形成金属间化合物,所以是不被用于纯金接合线或金-铂合金系接合线的元素。但是,在本发明的金-铂-钯合金接合线中,提高了接合线的机械强度,通过钙或镁的协同效果,即使高温放置也保持高的抗拉强度。
在铝不足10质量ppm的情况下,不能发挥上述效果,若铝超过30质量ppm,压接球成圆性就会变差。
因此,将铝的范围设定为10~30质量ppm。优选铝的范围为16~24质量ppm。
在本发明中,将钙或镁中的至少一种设定为总计10~60质量ppm。
作为接合线的添加元素,一般认为钙和镁是提高接合线的机械强度及压接球成圆性的元素。本发明的金-铂-钯合金接合线中,利用与铝的协同效果,钙提高接合线的机械强度,镁提高接合线的压接球的成圆性。
但是,钙或镁中的至少一种的总计不足10质量ppm的情况下,不能发挥上述的效果,若总计超过60质量ppm,接合线的机械强度过于强,会破坏铝垫片。因此,将钙或镁中的至少一种的总计设定为10~60质量ppm。优选总计添加钙及镁10~30质量ppm,更优选钙及镁共添加总计16~24质量ppm。
在本发明中将铍或稀土元素中的至少一种设定为总计为1~30质量ppm的范围。
一般认为,铍或稀土元素也是提高接合线的机械强度的元素。本发明的金-铂-钯合金接合线,利用与铝及钙或镁的配合效果,铍或稀土元素不仅提高接合线的机械强度,并且提高了第一熔合线时的压接球的成圆性。
优选共添加1~20质量ppm的铍及1~60质量ppm的稀土元素。理想的是,稀土元素含有镧1~30质量ppm或铈1~30质量ppm,更理想的是,共添加镧1~30质量ppm及铈1~30质量ppm。更优选铍6~14质量ppm、镧1~30质量ppm和铈1~30质量ppm的组合;铍1~20质量ppm、镧10~30质量ppm和铈1~30质量ppm的组合;或铍1~20质量ppm、镧1~30质量ppm和铈10~30质量ppm的组合,进一步优选铍6~14质量ppm、镧10~30质量ppm和铈10~30质量ppm的组合;铍6~14质量ppm、镧14~26质量ppm和铈14~26质量ppm的组合为最佳。
发明效果
如上所述,关于本发明的金-铂-钯合金接合线,熔融球和纯铝垫片或铝合金垫片的接合性良好,能够确保压接球的成圆性,并且即使在高温下放置,第一熔合线的接合界面的空隙率也不会粗大化地进展,能够确保稳定的接合可靠性,抗拉强度也高。此外,本发明的由金-铂-钯合金构成的接合线具有如下效果:使用不含卤素物质的环氧树脂即使在高温下放置,也不会引起第一熔合线的接合界面的劣化,电连接也不会劣化。
具体实施方式
[实施例]
对具有表1左栏中所示的成分组成的金-铂-钯合金(金的纯度99.9999质量%以上)进行熔解铸造,进行粗加工并进行退火热处理,接着进行连续拉丝达到20μm的最终线径,由此制造具有20μm的线径的本发明的金-铂-钯合金接合线(下面称为“本发明电线”)1~27和未进入本发明的组成范围的比较品的金-铂-钯合金接合线及现有品的金-钯合金系接合线(下面全部称为“比较电线”)28~36。
对于这些本发明电线1~27及比较电线28~36,测定电线强度。然后,放在Kulicke&Soffa(Kulicke&Soffa)制的接线机(商品名=Maxμm ultra)上,在搭接于半导体IC芯片上的由铝-0.5质量%铜合金构成的70μm见方铝合金垫片上,以40μm目标制作烧球(FAB),在加热温度:200℃、回线(loop)长度=5mm、回线高度=220μm、压接球径=48μm、压接球高度:14μm的条件下进行接合,对成圆性的偏差进行评价。接着,在175℃下放置1000小时后,对接合线进行拉伸试验。再将接合好的试样进行树脂密封且在175℃下放置4000小时,之后进行电阻测定。
[电线强度的评价方法]
对各个合金组成,用多功能型拉伸试验机(型式UTM-2)将100mm长的试料以10mm/min的速度进行拉伸,测定断裂时的强度。测定数设定为5点,对其平均值进行评价。将这些评价结果示于表1右栏。
[压接球成圆性的评价方法]
对各个合金组成,测定在评价用的IC芯片上接合100个时的压接球的X方向(与超声波施加成直角方向)和Y方向(与超声波施加同向)的长度,对其比进行评价。将这些评价结果示于表1右栏。
[抗拉强度]
对各个合金组成,用接线机在专用的IC芯片上进行接合,使用Dage社制“万能性接合强度测试仪系列4000”在快速粘接剂正上部对100点进行拉伸试验,进行抗拉强度的测定。其后,将该接合试样在175℃下放置1000小时后,再次对100点进行抗拉强度的测定。抗拉强度以高温放置后的抗拉强度的降低及快速接合部的剥落进行评价。将抗拉强度的评价结果示于表1右栏。
[电阻]
对各个合金组成,在专用的IC芯片上用接线机进行接合,用不含卤素的环氧树脂(日东电工株式会社制产品名GE-7470C)进行密封,制作电阻测定用试样。电阻使用KElTHLEY社制的产品名“Sourcemeter(型式2004)”,用专用的IC插座及专门构筑的自动测定系统进行测定。测定方法按照所谓的直流四端子法进行测定。
电阻是对100对外部引线(200头)在高温放置前和175℃4000小时的高温放置后进行测定。电阻和高温放置前相比较,达到20%以上的对产生电阻的情况下,设定为发生故障,对故障发生率进行评价。将电阻的评价结果示于表1右栏。
[表1]
实施品No.1~No.7为方案1的发明;实施品No.8~No.27为方案2的发明;实施品No.2及No.23~No.27为方案3的发明;实施品No.11、No.13~No.16及No.20~No.27为方案4的发明;实施品No.13~No.16及No.20~No.27为方案5的发明;以及实施品No.15、No.20及No.25~No.27为方案6的发明。
表1右栏中,电线强度表示强度测定结果,◎表示强度约83.4N(8.5gf)以上、○表示强度约68.6N(7.0gf)以上、△表示强度约53.9N(5.5gf)以上、×表示强度约53.0N(5.4gf)以下。
表1右栏中,压接球成圆性表示压接球径X和Y之比X/Y,◎表示X/Y为0.95~1.05、○表示X/Y为0.9~1.10、△表示X/Y为0.8~1.2、×表示X/Y为0.79以下及1.21以上。
表1右栏中、抗拉强度表示抗拉强度的降低量及第一接合部的剥落,◎表示降低量约0~9.8N(0~1.0gf)、○表示降低量约10.8~19.6N(1.1~2.0gf)、△表示降低量约20.6~39.2N(2.1gf~4.0gf)、×表示降低量约40.2N(4.1gf)以上及第一接合部发生剥落。
表1右栏中,电阻表示故障发生率,◎表示故障发生率为0%、○表示故障发生率为0.1~5.0%、△表示故障发生率为5.1~30.0%、×表示故障发生率为30.1%以上。
由表1右栏所示的结果可以了解,本发明电线的电线强度高、压接球的成圆性良好、高温放置后的抗拉强度无降低、使用不含卤素物质的环氧树脂时的高温放置后的电阻未见上升,与此相对,比较电线28~36这些特性至少一个不良。
工业上的应用
本发明的接合线具有在车载用或高速器件用的成为高温的环境下使用的无卤素环氧树脂密封用的半导体的用途。
Claims (7)
1.一种金-铂-钯合金接合线,其含有0.5~0.7质量%的铂、0.1~0.3质量%的钯、10~30质量ppm的铝、总计为10~60质量ppm的钙或镁中的至少一种,剩余部分由纯度99.999质量%以上的金组成。
2.一种金-铂-钯合金接合线,其含有0.4~1.2质量%的铂、0.01~0.5质量%的钯、10~30质量ppm的铝、总计为10~60质量ppm的钙或镁中的至少一种、总计为1~30质量ppm的铍及稀土元素中的至少一种,剩余部分由纯度99.999质量%以上的金组成。
3.如权利要求1或2所述的金-铂-钯合金接合线,其特征在于,所述钙或镁中含有10~30质量ppm的钙及10~30质量ppm的镁。
4.如权利要求2所述的金-铂-钯合金接合线,其特征在于,所述铍或稀土元素以总计1~30质量ppm含有1~20质量ppm的铍以及稀土元素中的至少一种。
5.如权利要求2所述的金-铂-钯合金接合线,其特征在于,所述铍或稀土元素以总计1~30质量ppm含有1~20质量ppm的铍、镧1~30质量ppm或铈中的至少一种。
6.如权利要求2所述的金-铂-钯合金接合线,其特征在于,所述铍或稀土元素含有1~20质量ppm的铍、1~30质量ppm的镧及1~30质量ppm的铈。
7.如权利要求1或2所述的金-铂-钯合金接合线,其特征在于,所述接合线用于无卤素环氧树脂密封。
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PCT/JP2012/080152 WO2013080851A1 (ja) | 2011-12-02 | 2012-11-21 | 金-白金-パラジウム合金ボンディングワイヤ |
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JPH09272931A (ja) * | 1996-04-04 | 1997-10-21 | Nippon Steel Corp | 半導体素子用金合金細線 |
JPH09275119A (ja) * | 1996-04-04 | 1997-10-21 | Nippon Steel Corp | 半導体装置 |
US6210637B1 (en) * | 1996-09-09 | 2001-04-03 | Nippon Steel Corporation | Gold alloy thin wire for semiconductor devices |
CN101040372A (zh) * | 2004-09-30 | 2007-09-19 | 田中电子工业株式会社 | 金合金焊线 |
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JP2641000B2 (ja) * | 1991-12-26 | 1997-08-13 | 新日本製鐵株式会社 | ボンディング用金合金細線 |
JP4596467B2 (ja) * | 2005-06-14 | 2010-12-08 | 田中電子工業株式会社 | 高い接合信頼性、圧着ボールの高い真円性、高い直進性および高い耐樹脂流れ性を有するボンディングワイヤ用金合金線 |
JP4130843B1 (ja) * | 2007-04-17 | 2008-08-06 | 田中電子工業株式会社 | 高信頼性金合金ボンディングワイヤ及び半導体装置 |
JP2011155129A (ja) * | 2010-01-27 | 2011-08-11 | Tanaka Electronics Ind Co Ltd | 高温半導体装置用金合金ボンディングワイヤ |
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Publication number | Priority date | Publication date | Assignee | Title |
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JPH09272931A (ja) * | 1996-04-04 | 1997-10-21 | Nippon Steel Corp | 半導体素子用金合金細線 |
JPH09275119A (ja) * | 1996-04-04 | 1997-10-21 | Nippon Steel Corp | 半導体装置 |
US6210637B1 (en) * | 1996-09-09 | 2001-04-03 | Nippon Steel Corporation | Gold alloy thin wire for semiconductor devices |
CN101040372A (zh) * | 2004-09-30 | 2007-09-19 | 田中电子工业株式会社 | 金合金焊线 |
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TW201331390A (zh) | 2013-08-01 |
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