CN103227260A - 发光元件、发光元件制造方法和发光装置 - Google Patents

发光元件、发光元件制造方法和发光装置 Download PDF

Info

Publication number
CN103227260A
CN103227260A CN2013100260358A CN201310026035A CN103227260A CN 103227260 A CN103227260 A CN 103227260A CN 2013100260358 A CN2013100260358 A CN 2013100260358A CN 201310026035 A CN201310026035 A CN 201310026035A CN 103227260 A CN103227260 A CN 103227260A
Authority
CN
China
Prior art keywords
light
electrode
layer
type semiconductor
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2013100260358A
Other languages
English (en)
Chinese (zh)
Inventor
青柳秀和
河崎孝彦
塩见治典
伊藤胜利
中岛真
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of CN103227260A publication Critical patent/CN103227260A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8314—Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings

Landscapes

  • Led Devices (AREA)
CN2013100260358A 2012-01-31 2013-01-23 发光元件、发光元件制造方法和发光装置 Pending CN103227260A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012-017660 2012-01-16
JP2012017660A JP2013157496A (ja) 2012-01-31 2012-01-31 発光素子およびその製造方法、並びに発光装置

Publications (1)

Publication Number Publication Date
CN103227260A true CN103227260A (zh) 2013-07-31

Family

ID=48779376

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2013100260358A Pending CN103227260A (zh) 2012-01-31 2013-01-23 发光元件、发光元件制造方法和发光装置

Country Status (3)

Country Link
US (1) US8987763B2 (https=)
JP (1) JP2013157496A (https=)
CN (1) CN103227260A (https=)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106575688A (zh) * 2014-10-07 2017-04-19 Lg电子株式会社 半导体器件及其制造方法
WO2018082101A1 (en) * 2016-11-07 2018-05-11 Goertek. Inc Micro-led with vertical structure, display device, electronics apparatus and manufacturing method
CN109698264A (zh) * 2017-10-20 2019-04-30 展晶科技(深圳)有限公司 发光二极管及其制造方法
CN110379896A (zh) * 2015-01-21 2019-10-25 晶元光电股份有限公司 半导体发光元件
CN110600596A (zh) * 2018-06-13 2019-12-20 相丰科技股份有限公司 垂直型发光二极管结构及其制造方法
TWI908043B (zh) * 2023-04-26 2025-12-11 日商京瓷股份有限公司 配線基板

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014102029A1 (de) 2014-02-18 2015-08-20 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von Halbleiterbauelementen und Halbleiterbauelement
CN105449064B (zh) * 2014-09-02 2018-02-23 展晶科技(深圳)有限公司 发光二极管及其制造方法
WO2016079929A1 (ja) * 2014-11-21 2016-05-26 信越半導体株式会社 発光素子及び発光素子の製造方法
KR102309092B1 (ko) * 2014-12-29 2021-10-06 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자 및 이를 포함하는 발광 소자 어레이
KR102504334B1 (ko) * 2016-05-26 2023-02-28 엘지이노텍 주식회사 발광 소자
KR102477250B1 (ko) * 2016-05-26 2022-12-13 엘지이노텍 주식회사 발광 소자
KR102261951B1 (ko) * 2017-03-17 2021-06-08 엘지이노텍 주식회사 반도체 소자 및 반도체 소자 제조 방법
KR102740658B1 (ko) 2018-08-28 2024-12-11 소니 세미컨덕터 솔루션즈 가부시키가이샤 발광 소자 및 전자 기기
CN111599831B (zh) 2019-02-20 2024-09-20 日亚化学工业株式会社 显示装置以及其制造方法
JP7029624B2 (ja) * 2019-02-20 2022-03-04 日亜化学工業株式会社 表示装置及びその製造方法
US11362246B2 (en) 2019-02-20 2022-06-14 Nichia Corporation Method of manufacturing display device with lateral wiring
KR102805792B1 (ko) * 2019-11-26 2025-05-12 삼성전자주식회사 Led 소자 및 그 제조방법과, led 소자를 포함하는 디스플레이 장치
KR102806089B1 (ko) * 2020-02-12 2025-05-12 삼성전자주식회사 Led 소자 및 그 제조방법과, led 소자를 포함하는 디스플레이 장치
DE102020124258A1 (de) 2020-09-17 2022-03-17 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches halbleiterbauelement und verfahren zur herstellung zumindest eines optoelektronischen halbleiterbauelements

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050208688A1 (en) * 2001-12-19 2005-09-22 Fuji Xerox Co., Ltd. Surface emitting semiconductor laser and process for producing the same
JP2006173197A (ja) * 2004-12-13 2006-06-29 Citizen Electronics Co Ltd 光半導体素子及び光半導体装置並びに光半導体素子の製造方法
CN101222014A (zh) * 2008-01-31 2008-07-16 金芃 垂直结构的半导体芯片
US20110204396A1 (en) * 2010-02-24 2011-08-25 Kabushiki Kaisha Toshiba Semiconductor light emitting device and method for manufacturing same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0983015A (ja) * 1995-09-20 1997-03-28 Oki Electric Ind Co Ltd モノリシック発光ダイオードアレイの製造方法
JP2002335013A (ja) * 2001-05-08 2002-11-22 Hitachi Cable Ltd 高密度発光ダイオードアレイ
JP3928621B2 (ja) 2004-01-19 2007-06-13 日亜化学工業株式会社 発光素子用ウエハー
US8097478B2 (en) * 2007-06-29 2012-01-17 Showa Denko K.K. Method for producing light-emitting diode
US20130015461A1 (en) * 2011-07-13 2013-01-17 Kun Hsin Technology Inc. Light-emitting Device Capable of Producing White Light And Light Mixing Method For Producing White Light With Same
US8410508B1 (en) * 2011-09-12 2013-04-02 SemiLEDs Optoelectronics Co., Ltd. Light emitting diode (LED) package having wavelength conversion member and wafer level fabrication method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050208688A1 (en) * 2001-12-19 2005-09-22 Fuji Xerox Co., Ltd. Surface emitting semiconductor laser and process for producing the same
JP2006173197A (ja) * 2004-12-13 2006-06-29 Citizen Electronics Co Ltd 光半導体素子及び光半導体装置並びに光半導体素子の製造方法
CN101222014A (zh) * 2008-01-31 2008-07-16 金芃 垂直结构的半导体芯片
US20110204396A1 (en) * 2010-02-24 2011-08-25 Kabushiki Kaisha Toshiba Semiconductor light emitting device and method for manufacturing same

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106575688A (zh) * 2014-10-07 2017-04-19 Lg电子株式会社 半导体器件及其制造方法
CN106575688B (zh) * 2014-10-07 2019-01-04 Lg电子株式会社 半导体器件及其制造方法
CN110379896A (zh) * 2015-01-21 2019-10-25 晶元光电股份有限公司 半导体发光元件
CN110379896B (zh) * 2015-01-21 2021-09-21 晶元光电股份有限公司 半导体发光元件
WO2018082101A1 (en) * 2016-11-07 2018-05-11 Goertek. Inc Micro-led with vertical structure, display device, electronics apparatus and manufacturing method
CN109891609A (zh) * 2016-11-07 2019-06-14 歌尔股份有限公司 垂直结构微发光二极管、显示装置、电子设备及制造方法
US11024773B2 (en) 2016-11-07 2021-06-01 Goertek. Inc Micro-LED with vertical structure, display device, electronics apparatus and manufacturing method
CN109891609B (zh) * 2016-11-07 2021-11-05 歌尔股份有限公司 垂直结构微发光二极管、显示装置、电子设备及制造方法
CN109698264A (zh) * 2017-10-20 2019-04-30 展晶科技(深圳)有限公司 发光二极管及其制造方法
CN109698264B (zh) * 2017-10-20 2020-08-18 展晶科技(深圳)有限公司 发光二极管及其制造方法
CN110600596A (zh) * 2018-06-13 2019-12-20 相丰科技股份有限公司 垂直型发光二极管结构及其制造方法
TWI908043B (zh) * 2023-04-26 2025-12-11 日商京瓷股份有限公司 配線基板

Also Published As

Publication number Publication date
US8987763B2 (en) 2015-03-24
US20130181249A1 (en) 2013-07-18
JP2013157496A (ja) 2013-08-15

Similar Documents

Publication Publication Date Title
CN103227260A (zh) 发光元件、发光元件制造方法和发光装置
US10249789B2 (en) Light emitting diode chip and fabrication method
US20160087149A1 (en) Semiconductor light-emitting device
CN105789236A (zh) 晶片级发光二极管封装件及其制造方法
JP2011216882A (ja) 高効率発光ダイオード及びその製造方法
CN114497300B (zh) 发光二极管和发光装置
TWI462328B (zh) 半導體發光裝置及其製造方法
KR20170133746A (ko) 발광 소자
JP5989318B2 (ja) 半導体発光素子及びその製造方法
CN102130248A (zh) 发光装置及其制造方法
KR101805301B1 (ko) 광추출효율 향상을 위한 p-형 오믹 접합 전극 패턴을 구비한 자외선 발광 다이오드 소자
CN220324473U (zh) 一种倒装发光元件及发光装置
CN220358112U (zh) 微型发光二极管显示芯片
CN117790656A (zh) 发光二极管及发光装置
CN117525243A (zh) 一种发光二极管及发光装置
CN117393674A (zh) 发光二极管及发光装置
CN116470388A (zh) 激光器芯片及激光器
TW201901987A (zh) 發光元件
TWI914197B (zh) 半導體裝置
US20260123110A1 (en) Light emitting diode and light emitting device
JP2019212834A (ja) 発光素子及びその製造方法
TW202447958A (zh) 半導體元件
CN120711904A (zh) 发光二极管及发光装置
CN115799418A (zh) 发光二极管及发光装置
TW202349740A (zh) 光電半導體元件

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20130731

RJ01 Rejection of invention patent application after publication