CN103224332B - 一种用于玻璃蚀刻的槽结构 - Google Patents
一种用于玻璃蚀刻的槽结构 Download PDFInfo
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- CN103224332B CN103224332B CN201310143423.4A CN201310143423A CN103224332B CN 103224332 B CN103224332 B CN 103224332B CN 201310143423 A CN201310143423 A CN 201310143423A CN 103224332 B CN103224332 B CN 103224332B
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- cell body
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- 238000005530 etching Methods 0.000 title claims abstract description 42
- 239000011521 glass Substances 0.000 title claims abstract description 26
- 210000005056 cell body Anatomy 0.000 claims abstract description 44
- 230000005587 bubbling Effects 0.000 claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 claims abstract description 10
- 238000010438 heat treatment Methods 0.000 claims description 11
- 238000005086 pumping Methods 0.000 claims description 9
- 239000000498 cooling water Substances 0.000 claims description 5
- 239000000945 filler Substances 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 4
- 238000001914 filtration Methods 0.000 claims description 3
- 239000011148 porous material Substances 0.000 claims description 3
- 239000005357 flat glass Substances 0.000 abstract description 7
- 238000004886 process control Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 22
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 12
- 230000000694 effects Effects 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000000567 combustion gas Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000002633 protecting effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- Surface Treatment Of Glass (AREA)
Abstract
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CN201310143423.4A CN103224332B (zh) | 2013-04-24 | 2013-04-24 | 一种用于玻璃蚀刻的槽结构 |
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CN201310143423.4A CN103224332B (zh) | 2013-04-24 | 2013-04-24 | 一种用于玻璃蚀刻的槽结构 |
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CN103224332A CN103224332A (zh) | 2013-07-31 |
CN103224332B true CN103224332B (zh) | 2015-07-29 |
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Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN108585534B (zh) * | 2018-07-25 | 2021-07-13 | 湖北鸿创科技有限公司 | 一种玻璃蚀刻用鼓泡装置 |
CN110076128A (zh) * | 2019-06-04 | 2019-08-02 | 大连达利凯普科技有限公司 | 单层电容器加工过程的清洗装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101033116A (zh) * | 2006-02-17 | 2007-09-12 | 智圆技术株式会社 | 薄化玻璃衬底的设备 |
CN101051603A (zh) * | 2006-04-07 | 2007-10-10 | 悦城科技股份有限公司 | 面板蚀刻制程的方法及其装置 |
CN101215100A (zh) * | 2008-01-16 | 2008-07-09 | 京东方科技集团股份有限公司 | 平板玻璃基板减薄蚀刻槽 |
CN203256140U (zh) * | 2013-04-24 | 2013-10-30 | 浙江金指科技有限公司 | 一种用于玻璃蚀刻的槽结构 |
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2013
- 2013-04-24 CN CN201310143423.4A patent/CN103224332B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101033116A (zh) * | 2006-02-17 | 2007-09-12 | 智圆技术株式会社 | 薄化玻璃衬底的设备 |
CN101051603A (zh) * | 2006-04-07 | 2007-10-10 | 悦城科技股份有限公司 | 面板蚀刻制程的方法及其装置 |
CN101215100A (zh) * | 2008-01-16 | 2008-07-09 | 京东方科技集团股份有限公司 | 平板玻璃基板减薄蚀刻槽 |
CN203256140U (zh) * | 2013-04-24 | 2013-10-30 | 浙江金指科技有限公司 | 一种用于玻璃蚀刻的槽结构 |
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Inventor after: Chen Huanjie Inventor before: Wang Sheng |
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Effective date of registration: 20160901 Address after: 313100 No. 588 Changxin Avenue, Taihu street, Huzhou, Zhejiang, Changxing County Patentee after: Zhejiang Changxin Heli Photoelectric Technology Co., Ltd. Address before: 313100, No. three, No. 588, Changxing County Economic Development Zone, Huzhou, Zhejiang Patentee before: Zhejiang Goldfinger Technology Co., Ltd. |
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Effective date of registration: 20200604 Address after: 330072 4-6 / F, building 2, Nanchang high tech electronic information industrial park, No. 888, Yaohu West Sixth Road, Nanchang high tech Industrial Development Zone, Nanchang City, Jiangxi Province Patentee after: Jiangxi Huashi photoelectric Co., Ltd Address before: 518000, 22 Industrial Zone, Second Industrial Road, Songgang street, Baoan District, Guangdong, Shenzhen Patentee before: SHENZHEN HUASHI OPTOELECTRONIC Co.,Ltd. |
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