CN103219631B - 光导天线、太赫兹波产生装置、拍摄装置、成像装置 - Google Patents
光导天线、太赫兹波产生装置、拍摄装置、成像装置 Download PDFInfo
- Publication number
- CN103219631B CN103219631B CN201310015567.1A CN201310015567A CN103219631B CN 103219631 B CN103219631 B CN 103219631B CN 201310015567 A CN201310015567 A CN 201310015567A CN 103219631 B CN103219631 B CN 103219631B
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- China
- Prior art keywords
- thz wave
- conductive region
- semiconductor layer
- type semiconductor
- photoconducting antenna
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000003384 imaging method Methods 0.000 title claims abstract description 46
- 239000004065 semiconductor Substances 0.000 claims abstract description 235
- 238000005259 measurement Methods 0.000 claims description 21
- 239000012535 impurity Substances 0.000 claims description 18
- 150000001875 compounds Chemical class 0.000 claims description 4
- 238000012360 testing method Methods 0.000 claims 27
- 239000000463 material Substances 0.000 abstract description 19
- 238000001514 detection method Methods 0.000 description 50
- 230000003287 optical effect Effects 0.000 description 31
- 230000006835 compression Effects 0.000 description 23
- 238000007906 compression Methods 0.000 description 23
- 238000005253 cladding Methods 0.000 description 20
- 239000000126 substance Substances 0.000 description 15
- 238000010586 diagram Methods 0.000 description 11
- 238000005530 etching Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 8
- 230000005684 electric field Effects 0.000 description 7
- 238000009826 distribution Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- OMOVVBIIQSXZSZ-UHFFFAOYSA-N [6-(4-acetyloxy-5,9a-dimethyl-2,7-dioxo-4,5a,6,9-tetrahydro-3h-pyrano[3,4-b]oxepin-5-yl)-5-formyloxy-3-(furan-3-yl)-3a-methyl-7-methylidene-1a,2,3,4,5,6-hexahydroindeno[1,7a-b]oxiren-4-yl] 2-hydroxy-3-methylpentanoate Chemical compound CC12C(OC(=O)C(O)C(C)CC)C(OC=O)C(C3(C)C(CC(=O)OC4(C)COC(=O)CC43)OC(C)=O)C(=C)C32OC3CC1C=1C=COC=1 OMOVVBIIQSXZSZ-UHFFFAOYSA-N 0.000 description 4
- 230000003321 amplification Effects 0.000 description 4
- 230000001678 irradiating effect Effects 0.000 description 4
- 238000003199 nucleic acid amplification method Methods 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 238000000701 chemical imaging Methods 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- -1 SiO 2 Chemical class 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/2823—Imaging spectrometer
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3581—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation
- G01N21/3586—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation by Terahertz time domain spectroscopy [THz-TDS]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
- H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J2005/0077—Imaging
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/12—Materials and properties photoconductor
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2203/00—Function characteristic
- G02F2203/13—Function characteristic involving THZ radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
- H10F71/1272—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
- H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Toxicology (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012-007939 | 2012-01-18 | ||
| JP2012007939A JP6003063B2 (ja) | 2012-01-18 | 2012-01-18 | 光伝導アンテナ、テラヘルツ波発生装置、カメラ、イメージング装置および計測装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103219631A CN103219631A (zh) | 2013-07-24 |
| CN103219631B true CN103219631B (zh) | 2017-09-22 |
Family
ID=48779336
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310015567.1A Expired - Fee Related CN103219631B (zh) | 2012-01-18 | 2013-01-16 | 光导天线、太赫兹波产生装置、拍摄装置、成像装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (3) | US8878134B2 (https=) |
| JP (1) | JP6003063B2 (https=) |
| CN (1) | CN103219631B (https=) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5799538B2 (ja) * | 2011-03-18 | 2015-10-28 | セイコーエプソン株式会社 | テラヘルツ波発生装置、カメラ、イメージング装置、計測装置および光源装置 |
| JP5987346B2 (ja) * | 2012-02-23 | 2016-09-07 | セイコーエプソン株式会社 | アンテナ、テラヘルツ波発生装置、カメラ、イメージング装置、および計測装置 |
| JP6032427B2 (ja) * | 2013-02-27 | 2016-11-30 | セイコーエプソン株式会社 | 光伝導アンテナ、カメラ、イメージング装置、および計測装置 |
| KR102100931B1 (ko) * | 2014-01-03 | 2020-04-14 | 삼성전자주식회사 | 광전도 안테나 |
| JP2015148541A (ja) * | 2014-02-07 | 2015-08-20 | セイコーエプソン株式会社 | 光伝導アンテナ、カメラ、イメージング装置、および計測装置 |
| JP2015159176A (ja) * | 2014-02-24 | 2015-09-03 | セイコーエプソン株式会社 | 光伝導アンテナ、カメラ、イメージング装置、および計測装置 |
| US20190227404A1 (en) * | 2016-07-20 | 2019-07-25 | National University Of Singapore | Terahertz Radiation Emitters |
| RU2731166C2 (ru) * | 2018-07-19 | 2020-08-31 | Федеральное государственное автономное научное учреждение Институт сверхвысокочастотной полупроводниковой электроники имени В.Г. Мокерова Российской академии наук (ФГАНУ ИСВЧПЭ РАН, ИСВЧПЭ РАН) | Способ изготовления фотопроводящих антенн |
| WO2020145233A1 (ja) * | 2019-01-08 | 2020-07-16 | パイオニア株式会社 | 電磁波検出装置及び電磁波検出システム |
| JP7455611B2 (ja) * | 2019-03-14 | 2024-03-26 | キヤノン株式会社 | 処理システム |
| JP2020198448A (ja) * | 2020-08-26 | 2020-12-10 | パイオニア株式会社 | 光伝導素子及び計測装置 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040065832A1 (en) * | 2001-01-16 | 2004-04-08 | Cluff Julian Alexander | Apparatus and method for investigating a sample |
| JP2010050287A (ja) * | 2008-08-21 | 2010-03-04 | Canon Inc | 光伝導素子 |
| JP2011176246A (ja) * | 2010-02-26 | 2011-09-08 | Canon Inc | 電磁波発生装置 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6320191B1 (en) * | 1998-03-27 | 2001-11-20 | Picometrix, Inc. | Dispersive precompensator for use in an electromagnetic radiation generation and detection system |
| JP2002223017A (ja) | 2001-01-26 | 2002-08-09 | Tochigi Nikon Corp | テラヘルツ光素子、並びに、これを用いたテラヘルツ光発生装置及びテラヘルツ光検出装置 |
| JP2003015175A (ja) | 2001-04-27 | 2003-01-15 | Mitsubishi Electric Corp | 固体光源装置 |
| JP3846233B2 (ja) | 2001-06-27 | 2006-11-15 | 住友金属工業株式会社 | 耐水素誘起割れ性に優れた鋼材 |
| GB2392782B (en) | 2002-09-04 | 2005-07-13 | Teraview Ltd | An Antenna |
| JP2006010319A (ja) | 2004-06-22 | 2006-01-12 | Matsushita Electric Ind Co Ltd | テラヘルツ電磁波発生・検出装置 |
| JP2006145372A (ja) | 2004-11-19 | 2006-06-08 | Matsushita Electric Ind Co Ltd | テラヘルツ電磁波発生装置 |
| JP2006313803A (ja) | 2005-05-09 | 2006-11-16 | Matsushita Electric Ind Co Ltd | テラヘルツ電磁波発生装置 |
| DE102006010301B3 (de) * | 2006-03-07 | 2007-06-06 | Batop Gmbh | Anordnung zur Emission und zum Empfang von Terahertz Strahlung |
| JP4481946B2 (ja) * | 2006-03-17 | 2010-06-16 | キヤノン株式会社 | 検出素子及び画像形成装置 |
| DE102007063625B4 (de) * | 2007-03-15 | 2009-10-29 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Photoleiter und Verfahren zum Herstellen desselben |
| US8067739B2 (en) * | 2007-06-22 | 2011-11-29 | Canon Kabushiki Kaisha | Photoconductive element for generation and detection of terahertz wave |
| JP5222532B2 (ja) | 2007-11-14 | 2013-06-26 | 浜松ホトニクス株式会社 | 光導電アンテナ素子 |
| JP5178398B2 (ja) * | 2008-08-27 | 2013-04-10 | キヤノン株式会社 | 光伝導素子 |
| JP2010283176A (ja) * | 2009-06-05 | 2010-12-16 | Canon Inc | 光伝導素子、それを用いたテラヘルツ波発生装置及び検出装置 |
| US8563955B2 (en) * | 2009-06-12 | 2013-10-22 | Baden-Wurttemberg Stiftung Ggmbh | Passive terahertz radiation source |
| JP2011202972A (ja) * | 2010-03-24 | 2011-10-13 | Fujitsu Ltd | イメージング装置 |
| JP5418916B2 (ja) * | 2010-06-04 | 2014-02-19 | 日本電気株式会社 | 反射型イメージング装置 |
-
2012
- 2012-01-18 JP JP2012007939A patent/JP6003063B2/ja not_active Expired - Fee Related
- 2012-12-20 US US13/721,960 patent/US8878134B2/en not_active Expired - Fee Related
-
2013
- 2013-01-16 CN CN201310015567.1A patent/CN103219631B/zh not_active Expired - Fee Related
-
2014
- 2014-10-02 US US14/504,643 patent/US9130118B2/en not_active Expired - Fee Related
-
2015
- 2015-08-05 US US14/818,585 patent/US9349917B2/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040065832A1 (en) * | 2001-01-16 | 2004-04-08 | Cluff Julian Alexander | Apparatus and method for investigating a sample |
| JP2010050287A (ja) * | 2008-08-21 | 2010-03-04 | Canon Inc | 光伝導素子 |
| JP2011176246A (ja) * | 2010-02-26 | 2011-09-08 | Canon Inc | 電磁波発生装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20150014532A1 (en) | 2015-01-15 |
| JP2013149714A (ja) | 2013-08-01 |
| US8878134B2 (en) | 2014-11-04 |
| CN103219631A (zh) | 2013-07-24 |
| US20130181128A1 (en) | 2013-07-18 |
| JP6003063B2 (ja) | 2016-10-05 |
| US9130118B2 (en) | 2015-09-08 |
| US20150340560A1 (en) | 2015-11-26 |
| US9349917B2 (en) | 2016-05-24 |
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