CN103219336B - 一种阵列基板、显示装置以及阵列基板的制备方法 - Google Patents
一种阵列基板、显示装置以及阵列基板的制备方法 Download PDFInfo
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Abstract
本发明属于显示技术领域,具体涉及一种阵列基板、包括该阵列基板的显示装置以及阵列基板的制备方法。该阵列基板包括基板以及位于基板上的多个子像素单元,所述子像素单元包括薄膜晶体管主体层以及设于所述薄膜晶体管主体层上方的彩膜层,所述薄膜晶体管主体层包括栅极层、源极层、漏极层以及钝化层,所述薄膜晶体管主体层上表面还设置有附加层,所述附加层对应着每一子像素单元的区域开设有中空的光阻材料容置部,所述彩膜材料设置于所述光阻材料容置部内,所述附加层和所述钝化层中与所述漏极层相对应的区域形成有像素电极过孔。该阵列基板中薄膜晶体管性能更稳定,阵列基板制备工艺更简化,成本更低,包括该阵列基板的显示装置性能更稳定。
Description
技术领域
本发明属于显示技术领域,具体涉及一种阵列基板、显示装置以及阵列基板的制备方法。
背景技术
随着技术的发展,平板显示装置已取代笨重的CRT显示装置成为目前的主流显示装置。目前,常用的平板显示装置包括LCD(LiquidCrystalDisplay:液晶显示装置)和OLED(OrganicLight-EmittingDiode:有机电致发光二极管)显示装置。
液晶显示装置包括阵列基板和彩膜基板,二者之间填充有液晶。阵列基板上设置有薄膜晶体管(ThinFilmTransistor:简称TFT),薄膜晶体管是光线是否能够射出显示装置的控制部件,其包括栅极层、栅极绝缘层、有源层、钝化层、源漏极层等多个层结构;彩膜基板上设置有彩膜层(又称彩色滤光片),彩膜层是显示装置能够彩色化的关键部件,其包括红、绿、蓝等多个颜色子层。背光源发出的白光经过彩膜层,利用彩膜层的彩色光阻分别产生红、绿、蓝三基色;同时,通过薄膜晶体管阵列调节加载于电极上的电压,使液晶分子发生偏转以控制光线的通过,可以改变三基色的比例,最终实现图像的彩色显示。在液晶显示装置的制造过程中,一般是将彩膜基板和阵列基板分别制造出来,然后将彩膜基板与阵列基板对合封装起来。为保证液晶面板的正常工作,阵列基板和彩膜基板的对位压盒精度要求很高。
OLED是一种利用有机固态半导体作为发光材料的发光器件,OLED显示装置正是利用OLED来实现图像显示的显示装置。其中,尤其以白光有机发光二极管(WhiteOLED:即WOLED)的技术最为成熟,稳定性好、制备工艺简单,故在显示装置中获得了广泛应用。与液晶显示装置相同,在WOLED显示装置中采用彩膜层来实现彩色化。
在液晶显示装置或WOLED显示装置中,每个外界可见的最小像素点(即“可见像素”)由多个像素单元构成,每个像素单元中具有不同颜色的彩膜层,从而经过不同像素单元的的光线在经过彩膜层后变为不同颜色,这些不同颜色的光混合成为“可见像素”发出的光。
随着显示技术的进步,目前,在WOLED显示装置中出现了将彩膜层设在阵列基板上(ColorFilteronArray,简称COA)以实现彩色显示的模式。如图1所示,在已经形成了薄膜晶体管主体层2(包括栅极层21、栅极绝缘层22、有源层23、源漏极层24和钝化层25(Passivation,简称PVX))后的阵列基板上,采用光刻工艺(包括涂布、曝光、显影等多个步骤)在钝化层25的上方形成彩膜层5,如图1A所示;然后在彩膜层5上方形成平坦保护层4,最后形成像素电极过孔6,如图1B所示。采用该模式,可以省去单独的彩膜基板的制造,不需要考虑彩膜基板与阵列基板的对位压盒精度;而且制成的阵列基板具有较好的稳定性,所以成为目前较常采用的WOLED显示装置全彩实现方法。但是,如图1所示,薄膜晶体管主体层的钝化层25中还具有像素电极过孔6(ViaHole),先在薄膜晶体管主体层2上方形成像素电极过孔6,然后采用光刻工艺形成彩膜层5时,光刻工艺中涂布光阻材料的步骤以及显影步骤中采用的显影液中的金属离子、水分子等会对薄膜晶体管的特性造成影响;又,先在薄膜晶体管主体层2上方形成彩膜层5,然后在钝化层25中刻蚀形成像素电极过孔6时,刻蚀液中的酸性物质等会对彩膜层5的特性造成影响。
在液晶显示装置的制造过程中,虽然可以借鉴WOLED显示装置实现彩色显示的COA模式在阵列基板上形成彩膜层,但是,按现有技术中采用光刻工艺形成彩膜层的方式,同样不可避免地将出现对薄膜晶体管的特性造成影响的问题。
发明内容
本发明所要解决的技术问题是针对现有技术中存在的上述不足,提供一种阵列基板、包括该阵列基板的显示装置以及阵列基板的制备方法,该阵列基板中薄膜晶体管性能更稳定,阵列基板制备工艺更简化,成本更低,包括该阵列基板的显示装置性能更稳定。
解决本发明技术问题所采用的技术方案是该阵列基板,包括基板以及位于基板上的多个子像素单元,所述子像素单元包括薄膜晶体管主体层以及设于所述薄膜晶体管主体层上方的彩膜层,所述薄膜晶体管主体层包括栅极层、源极层、漏极层以及钝化层,所述薄膜晶体管主体层上表面还设置有附加层,所述附加层对应着每一子像素单元的区域开设有中空的光阻材料容置部,所述彩膜材料设置于所述光阻材料容置部内,所述附加层和所述钝化层中与所述漏极层相对应的区域形成有像素电极过孔。
优选的是,所述光阻材料容置部开设于所述附加层的上表层,所述光阻材料容置部的底部与所述薄膜晶体管主体层的上表面相离;
或者,所述光阻材料容置部贯穿于所述附加层,所述光阻材料容置部的底部与所述薄膜晶体管主体层的上表面接触。
优选的是,所述光阻材料容置部的形状为倒置的四棱锥台体形状,或者为长方体形状,所述光阻材料容置部的底面面积等于对应的所述子像素单元的面积。
优选的是,所述附加层中未开设所述光阻材料容置部的区域的厚度大于或等于所述彩膜层的厚度,所述光阻材料容置部的深度等于所述彩膜层的厚度。
优选的是,所述附加层采用正性光刻胶或负性光刻胶形成。
一种显示装置,所述显示装置包括上述的阵列基板。
一种优选方案是,所述显示装置中还包括有液晶层,所述液晶层设置于所述彩膜层的上方。
一种优选方案是,所述显示装置中还包括有机电致发光层,所述有机电致发光层设置于所述彩膜层的上方。
一种上述阵列基板的制备方法,采用构图工艺在所述阵列基板薄膜晶体管主体层上表面形成附加层,在所述附加层对应着每一子像素单元的区域形成中空的光阻材料容置部,在所述附加层和所述钝化层与所述漏极层相对应的区域形成像素电极过孔。
一种优选方案是,所述方法具体包括:
采用刮涂方式,或旋涂方式,或刮涂与旋涂结合的方式,在所述阵列基板薄膜晶体管主体层上形成一层由光刻胶形成的附加层;
采用灰色调掩模板或半色调掩模板对所述附加层进行曝光,其中,所述附加层与形成所述光阻材料容置部的区域对应的区域为半曝光区,所述附加层与形成所述像素电极过孔的区域对应的区域为全曝光区,所述附加层的其他区域为未曝光区;
对所述阵列基板进行显影,所述附加层全曝光区的光刻胶被完全去除,从而暴露出部分所述钝化层,所述附加层半曝光区的光刻胶被部分去除,从而形成所述光阻材料容置部,所述附加层未曝光区的光刻胶完全保留;
对所述阵列基板进行后烘,从而固化所述附加层;
对所述阵列基板进行刻蚀,在暴露出的部分所述钝化层中形成像素电极过孔;
采用喷墨法在所述光阻材料容置部中填充彩膜材料,以形成彩膜层;
在所述像素电极过孔中形成像素电极。
一种优选方案是,所述方法具体包括:
采用刮涂方式,或旋涂方式,或刮涂与旋涂结合的方式,在所述阵列基板薄膜晶体管主体层上形成一层由光刻胶形成的附加层;
采用普通掩模板对所述附加层进行曝光,其中,所述附加层与形成所述光阻材料容置部的区域以及与形成所述像素电极过孔的区域对应的区域为全曝光区,所述附加层的其他区域为未曝光区;
对所述阵列基板进行显影,所述附加层全曝光区的光刻胶被完全去除,从而暴露出部分所述钝化层以及形成所述光阻材料容置部,所述附加层未曝光区的光刻胶完全保留;
对所述阵列基板进行后烘,从而固化所述附加层;
采用喷墨法在所述光阻材料容置部中填充彩膜材料,以形成彩膜层;
对所述阵列基板进行刻蚀,在暴露出的部分所述钝化层中形成像素电极过孔;
在所述像素电极过孔中形成像素电极。
本发明的有益效果是:该阵列基板中薄膜晶体管性能更稳定,阵列基板制备工艺更简化,成本更低,包括该阵列基板的显示装置性能更稳定。
附图说明
图1为现有技术中阵列基板的结构示意图;
其中:
图1A为采用光刻工艺在阵列基板上形成彩膜层的结构示意图;
图1B为在图1A中的阵列基板上形成像素电极过孔的结构示意图;
图2为本发明实施例1中阵列基板的结构示意图。
图3为图2中阵列基板形成的流程示意图;
其中:
图3A为薄膜晶体管主体层的结构示意图;
图3B为在薄膜晶体管主体层上形成附加层的结构示意图;
图3C为对附加层采用掩模板进行曝光的示意图;
图3D在图3C基础上经显影、后烘后在附加层形成光阻材料容置部和像素电极过孔区域的示意图;
图3E为在图3D基础上经刻蚀形成像素电极过孔的示意图;
图3F为采用喷墨法在图3E的光阻材料容置部形成彩膜层的示意图;
图4为本发明实施例2中阵列基板的结构示意图;
图5为图4中阵列基板形成的部分流程示意图;
其中:
图5A为经显影、后烘、刻蚀后在附加层形成光阻材料容置部和像素电极过孔区域的示意图;
图5B为采用喷墨法在图5A的光阻材料容置部形成彩膜层的示意图。
图中:1-基板;2-薄膜晶体管主体层;21-栅极层;22-栅极绝缘层;23-有源层;24-源漏极层;25-钝化层;4-平坦保护层;5-彩膜层;50-光阻材料容置部;6-像素电极过孔;60-过孔区域;7-附加层;8-掩模板;9-打印头。
具体实施方式
为使本领域技术人员更好地理解本发明的技术方案,下面结合附图和具体实施方式对本发明阵列基板、包括该阵列基板的显示装置以及阵列基板的制备方法作进一步详细描述。
一种阵列基板,包括基板以及位于基板上的多个子像素单元,所述子像素单元包括薄膜晶体管主体层以及设于所述薄膜晶体管主体层上方的彩膜层,所述薄膜晶体管主体层包括栅极层、源极层、漏极层以及钝化层,所述薄膜晶体管主体层上表面还设置有附加层,所述附加层对应着每一子像素单元的区域开设有中空的光阻材料容置部,所述彩膜材料设置于所述光阻材料容置部内,所述附加层和所述钝化层中与所述漏极层相对应的区域形成有像素电极过孔。
一种显示装置,所述显示装置包括上述的阵列基板。
上述阵列基板的制备方法,采用构图工艺在所述阵列基板薄膜晶体管主体层上表面形成附加层,在所述附加层对应着每一子像素单元的区域形成中空的光阻材料容置部,在所述附加层和所述钝化层与所述漏极层相对应的区域形成像素电极过孔。
实施例1:
本实施例的显示装置为液晶显示装置。该液晶显示装置包括阵列基板和形成在所述阵列基板上的彩膜层,即将彩膜层设在已经形成了薄膜晶体管的阵列基板的上方。
在本实施例中,如图2所示,阵列基板包括基板1以及位于基板上的多个子像素单元,所述子像素单元包括薄膜晶体管主体层2以及设于所述薄膜晶体管主体层2上方的彩膜层5。所述薄膜晶体管主体层2的上表面还设置有附加层7,所述附加层7对应着每一子像素单元的区域开设有中空的光阻材料容置部50,所述彩膜材料设置于所述光阻材料容置部内,所述附加层7和所述钝化层25中与所述漏极层相对应的区域形成有像素电极过孔6。
其中,所述薄膜晶体管主体层2包括依次层叠设置的栅极层21、栅极绝缘层22、有源层23、源漏极层24和钝化层25。
在本实施例中,所述薄膜晶体管主体层上表面的附加层7为采用正性光刻胶或负性光刻胶形成。所述附加层7开设有中空的光阻材料容置部50,所述光阻材料容置部50的底部与所述薄膜晶体管主体层2的上表面相离,所述光阻材料容置部内填充有彩色光阻材料以形成彩膜层5。彩色光阻材料具有滤光的功能,一般需要其具有耐热性佳、色饱和度高、透光率好等特点。
其中,对应每一子像素单元的所述附加层7开设有一个光阻材料容置部50,每一所述光阻材料容置部50内填充有一个颜色的光阻材料。通常,每一所述像素单元包括三个子像素单元,彩膜层由红、绿、蓝三个颜色的彩色光阻材料形成,每一颜色的彩色光阻材料对应一个子像素单元。
在本实施例中,所述彩色光阻材料通过喷墨方式填充于所述光阻材料容置部中,固化后形成所述彩膜层5。所述附加层7中未开设所述光阻材料容置部50的区域的厚度大于所述彩膜层5的厚度,所述光阻材料容置部50的深度等于所述彩膜层5的厚度。其中,所述光阻材料容置部50的深度范围为1.5-2.5μm,所述光阻材料容置部50的底面与所述薄膜晶体管主体层2的上表面的距离范围为
如图2所示,本实施例中,所述光阻材料容置部50的形状为倒置的四棱锥台体形状,所述光阻材料容置部50的底面面积等于对应的所述子像素单元的面积。当然,本实施例并不限定所述光阻材料容置部50为倒置的四棱锥台体的形状,例如,所述光阻材料容置部的形状也可以为长方体形或其他形状,只要方便采用喷墨法对其填充彩色光阻材料,并使得最终形成的彩膜层厚度在工艺误差允许范围内的形状都可以,这里不做限定。
其中,所述光阻材料容置部50在对应每一子像素单元的所述附加层的排布方式可以为条型、品字型或者马赛克型。
上述阵列基板的制备方法是,采用构图工艺在所述阵列基板薄膜晶体管主体层上表面形成附加层,在所述附加层对应着每一子像素单元的区域形成中空的光阻材料容置部,在所述附加层和所述钝化层与所述漏极层相对应的区域形成像素电极过孔。
如图3所示,所述方法具体包括如下步骤:
步骤S1):在所述基板上形成所述薄膜晶体管主体层。
本步骤中,在所述基板排列有多个子像素区域,每一子像素区域对应一个子像素单元,所述子像素单元包括设于基板上的薄膜晶体管主体层。如图3A所示,在基板1上,所述薄膜晶体管主体层2包括依次层叠的栅极层21、栅极绝缘层22、有源层23、源漏极层24以及位于它们上方的钝化层25。由于所述薄膜晶体管主体层的具体结构根据需要可进行灵活设计,而其各层的形成工艺与现有技术相同,因此这里不再赘述。
步骤S2):在所述薄膜晶体管主体层上表面形成一层附加层。
在该步骤中,附加层为采用正性光刻胶(PositivePhotoResist)形成。其中,附加层的厚度大于设定的彩膜层的厚度,以保证所述光阻材料容置部的底面与所述薄膜晶体管主体层的上表面相离。
如图3B所示,采用刮涂方式,或旋涂方式,或刮涂与旋涂结合的方式,在所述薄膜晶体管主体层2的上方涂覆一层正性光刻胶,以形成附加层7,所述附加层7的厚度范围为2-4μm。正性光刻胶的被曝光区域更易溶解于显影液。
步骤S3):对所述阵列基板进行曝光。
在该步骤中,采用光刻工艺在所述附加层7的上表层形成光阻材料容置部50。所述光刻工艺包括曝光步骤,如图3C所示,所述曝光步骤中采用的掩模板8对应着形成光阻材料容置部50的区域的透光量小于对应着形成所述薄膜晶体管的像素电极过孔6的过孔区域60的透光量,而大于其他区域的透光量。具体的,所述掩模板8对应着形成所述薄膜晶体管的过孔区域60的透光量为使得对应区域的所述附加层7被完全曝光,所述掩模板8对应着形成光阻材料容置部50的区域的透光量为使得对应区域的所述附加层7被不完全曝光,其中,可以采用灰色调掩模板或半色调掩模板来实现不完全曝光。此时,所述附加层7与形成光阻材料容置部50的区域对应的区域为半曝光区,所述附加层7与形成像素电极过孔6的过孔区域60对应的区域为全曝光区,所述附加层7除上述两部分区域外的其他区域为未曝光区。
在所述涂覆步骤与所述曝光步骤之间,还进一步包括真空干燥步骤与前烘步骤,所述前烘温度范围为80-120℃。
步骤S4)对所述阵列基板进行显影。
在该步骤中,所述附加层7全曝光区的光刻胶被完全去除,从而暴露出部分所述钝化层25,即对应着形成像素电极过孔6的过孔区域60的钝化层25完全裸露出来;所述附加层7半曝光区的光刻胶被部分去除,从而形成所述光阻材料容置部50,所述附加层7未曝光区的光刻胶完全保留。由于附加层7为采用正性光刻胶形成,因此,在曝光过程中被光照射到的部分正性光刻胶通过感光化学反应,在显影液易于被溶解,从而被去除。
步骤S5)对所述阵列基板进行后烘,从而固化所述附加层。
在该步骤中,所述后烘温度范围为220-240℃,时间范围为40-50min。如图3D所示,经过后烘步骤后,在对应着形成光阻材料容置部50的区域即形成倒置的四棱锥台体的形状的凹坑,该凹坑的底部与薄膜晶体管主体层2的上表面具有一定的距离(即相离),附加层7围绕在光阻材料容置部50的四个侧壁即形成挡墙(barricade)。该凹坑的底部与薄膜晶体管主体层2的上表面之间保留的部分光刻胶层对薄膜晶体管主体层2起到了很好的保护作用。
步骤S7)对所述阵列基板进行刻蚀。
在该步骤中,在附加层全曝光区以及暴露出的部分所述钝化层中形成像素电极过孔。如图3E所示,对上述的阵列基板进行刻蚀步骤,将对应着过孔区域60的钝化层25中的金属材料去除,最终形成像素电极过孔6。其中,所述刻蚀步骤采用干法刻蚀,所述干法刻蚀通过六氟化硫(SF6)和氧气(O2)的化学作用,在所述钝化层25形成所述像素电极过孔6,所述像素电极过孔6使所述像素电极层与所述漏极层连接。
步骤S6)然后,进一步采用喷墨法(ink-jet)在所述光阻材料容置部中填充彩膜材料,以形成彩膜层。
在该步骤中,将喷头9对准光阻材料容置部50,分别滴入红、绿、蓝(RGB)三个颜色的彩色光阻材料(也即墨滴),经过固化步骤后,即可形成红、绿、蓝三个彩膜层,如图3F所示。其中,彩色光阻材料包括低聚物、颜料、有机溶剂、添加剂等,根据采用的喷头(包括热气泡式和压电式喷头)不同,光阻材料中的低聚物又不尽相同。采用喷墨法形成彩膜层具有成本低、工艺简单、颜料利用率高等优点。
步骤S8)最后,在所述像素电极过孔中形成像素电极。
在该步骤中,在已经形成彩膜层5的阵列基板上方采用氧化铟锡(IndiumTinOxide,简称ITO)制备像素电极层,并形成取向层,然后滴注液晶,并利用无图案的玻璃基板对盒,从而封装形成液晶显示装置。
在本实施例中,先在薄膜晶体管主体层上方形成像素电极过孔,此时薄膜晶体管主体层由于具有附加层的保护,因此能有效避免显影步骤对薄膜晶体管的特性造成影响;同时,先形成薄膜晶体管所必须的像素电极过孔后,再在薄膜晶体管主体层上方通过喷墨法形成彩膜层,能有效避免形成像素电极过孔时采用的刻蚀液中的酸性物质等会对彩膜层的特性造成影响。在液晶显示装置组装完成后,附加层还能有效防止薄膜晶体管被液晶污染。
相比现有技术,虽然也是利用喷墨法制作彩膜层,但本实施例中不需要像现有技术中采用专门的工艺步骤预先专门形成挡墙,而仅需在形成所述钝化层的像素电极过孔的过程中,通过采用半色调掩模板或灰阶掩模板形成可设置彩膜层的光阻材料容置部,从而很方便地采用喷墨法在对应像素单元滴入例如红色、绿色、蓝色等预定颜色的光阻材料而形成相应颜色的彩膜层。
同时,本实施例与现有技术相比,本实施例中采用COA模式完成彩膜层后,因为直接利用了钝化层上方的光刻胶层作为挡墙,段差很小,因此在彩膜层的上方不需要单独设置平坦保护层,与现有技术必须采用平坦保护层来增加彩膜层上表面的平整度,可以减少一道工艺步骤。
综上,相比现有技术采用喷墨法形成彩膜基板的工艺,本实施例形成彩膜层的工艺更简化,成本也更低。
实施例2:
本实施例与实施例1的区别在于,本实施例的阵列基板中,如图4所示,所述光阻材料容置部贯穿于所述附加层7,所述光阻材料容置部50的底部与所述薄膜晶体管主体层2的上表面接触。
相应的,所述附加层7中未开设所述光阻材料容置部50的区域的厚度等于所述彩膜层5的厚度,所述光阻材料容置部50的深度等于所述彩膜层的厚度。
本实施例的阵列基板的制备方法具体为,先在基板1上形成薄膜晶体管主体层2,然后进行如下步骤:
步骤S1)采用刮涂方式,或旋涂方式,或刮涂与旋涂结合的方式,在所述阵列基板薄膜晶体管主体层2上形成一层由光刻胶形成的附加层7;
步骤S2)采用普通掩模板对所述附加层7进行曝光,其中,所述附加层7与形成所述光阻材料容置部50的区域对应的区域以及所述附加层7与形成所述像素电极过孔6的区域对应的区域为全曝光区,所述附加层7的其他区域为未曝光区;
步骤S3)对所述阵列基板进行显影,所述附加层7全曝光区的光刻胶被完全去除,从而暴露出部分所述钝化层25以及形成所述光阻材料容置部50,所述附加层7未曝光区的光刻胶被完全保留;
步骤S4)对所述阵列基板进行后烘,从而固化所述附加层;
步骤S5)采用喷墨法在所述光阻材料容置部50中填充彩膜材料,以形成彩膜层5,如图5A所示;
步骤S6)对所述阵列基板进行刻蚀,在暴露出的部分所述钝化层25中形成像素电极过孔6,如图5B所示;
步骤S7)在所述像素电极过孔6中形成像素电极。
上述每一步骤中的具体制备过程可参考实施例1中阵列基板的制备过程,这里不再赘述。
在本实施例中,采用干法刻蚀对阵列基板进行刻蚀。此时,彩膜层5对对应着形成光阻材料容置部50的区域的薄膜晶体管主体层2起到了一定的保护作用,避免了钝化层25对应着形成光阻材料容置部50的区域被刻蚀;而干法刻蚀对彩膜层5的影响最多为数百纳米,因此可忽略不计,从而减少了在现有技术上要先形成挡墙,再进行喷墨时制作挡墙的工艺,使得工艺流程更简单易操作。而且,由于彩膜层5不是采用光刻工艺形成,因此也避免了涂布、显影步骤对薄膜晶体管的特性造成影响。
实施例3:
本实施例与实施例1、2的区别在于,本实施例的阵列基板应用于WOLED显示装置中。
本实施例中,所述显示装置中还包括OLED,所述OLED设置于所述彩膜层的上方,且每一所述OLED对应着一个所述子像素单元。
本实施例与实施例1、2的区别在于,在采用COA模式在阵列基板上完成彩膜层的制备后,先在彩膜层的上方形成与像素电极层相连的金属阳极层,然后进一步制备像素限定层(PixelDefineLayer,简称PDL)以及涂覆发光层(EmittingLayer:简称EL),最后溅射形成金属阴极层,并封装形成OLED显示装置。
本实施例中阵列基板的结构以及阵列基板的制备方法与实施例1或2相同,这里不再赘述。
实施例1-3提供了一种阵列基板以及采用COA模式与喷墨法结合制备阵列基板的方法,利用附加层经曝光、显影和后烘步骤即可形成挡墙,减少了现有技术中采用喷墨法形成彩膜层所必须形成挡墙和为平坦化而形成平坦保护层的两个光刻工艺步骤,简化了工艺,降低了成本,也避免了制作挡墙过程中对薄膜晶体管的影响,使得薄膜晶体管性能更稳定,同时使得阵列基板的性能更稳定。
本发明采用喷墨法在阵列基板上形成彩膜层,特别适用于大面积的阵列基板的生产,为显示面板的大型化提供了条件。
可以理解的是,以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式,然而本发明并不局限于此。对于本领域内的普通技术人员而言,在不脱离本发明的精神和实质的情况下,可以做出各种变型和改进,这些变型和改进也视为本发明的保护范围。
Claims (8)
1.一种阵列基板,包括基板以及位于所述基板上的多个子像素单元,所述子像素单元包括薄膜晶体管主体层以及设于所述薄膜晶体管主体层上方的彩膜层,所述薄膜晶体管主体层包括栅极层、源极层、漏极层以及钝化层,其特征在于,所述薄膜晶体管主体层上表面还设置有附加层,所述附加层对应着每一子像素单元的区域开设有中空的光阻材料容置部,所述彩膜材料设置于所述光阻材料容置部内,所述附加层和所述钝化层中与所述漏极层相对应的区域形成有像素电极过孔;
其中,所述光阻材料容置部开设于所述附加层的上表层,所述光阻材料容置部的底部与所述薄膜晶体管主体层的上表面相离,其中:所述附加层采用正性光刻胶或负性光刻胶形成,且所述光阻材料容置部的底部与所述薄膜晶体管主体层的上表面相离的距离范围为
2.根据权利要求1所述的阵列基板,其特征在于,所述光阻材料容置部的形状为倒置的四棱锥台体形状,或者为长方体形状,所述光阻材料容置部的底面面积等于对应的所述子像素单元的面积。
3.根据权利要求2所述的阵列基板,其特征在于,所述附加层中未开设所述光阻材料容置部的区域的厚度大于或等于所述彩膜层的厚度,所述光阻材料容置部的深度等于所述彩膜层的厚度。
4.一种显示装置,其特征在于,所述显示装置包括权利要求1-3任一项所述的阵列基板。
5.根据权利要求4所述的显示装置,其特征在于,所述显示装置中还包括有液晶层,所述液晶层设置于所述彩膜层的上方。
6.根据权利要求5所述的显示装置,其特征在于,所述显示装置中还包括有机电致发光层,所述有机电致发光层设置于所述彩膜层的上方。
7.一种权利要求1-3任一项所述的阵列基板的制备方法,其特征在于,采用构图工艺在所述阵列基板薄膜晶体管主体层上表面形成附加层,在所述附加层对应着每一子像素单元的区域形成中空的光阻材料容置部,在所述附加层和所述钝化层与所述漏极层相对应的区域形成像素电极过孔;
其中,所述光阻材料容置部形成于所述附加层的上表层,所述光阻材料容置部的底部与所述薄膜晶体管主体层的上表面相离,其中:所述附加层采用正性光刻胶或负性光刻胶形成,且所述光阻材料容置部的底部与所述薄膜晶体管主体层的上表面相离的距离范围为
8.根据权利要求7所述的方法,其特征在于,所述方法具体包括:
采用刮涂方式,或旋涂方式,或刮涂与旋涂结合的方式,在所述阵列基板薄膜晶体管主体层上形成一层由光刻胶形成的附加层;
采用灰色调掩模板或半色调掩模板对所述附加层进行曝光,其中,所述附加层与形成所述光阻材料容置部的区域对应的区域为半曝光区,所述附加层与形成所述像素电极过孔的区域对应的区域为全曝光区,所述附加层的其他区域为未曝光区;
对所述阵列基板进行显影,所述附加层全曝光区的光刻胶被完全去除,从而暴露出部分所述钝化层,所述附加层半曝光区的光刻胶被部分去除,从而形成所述光阻材料容置部,所述附加层未曝光区的光刻胶完全保留;
对所述阵列基板进行后烘,从而固化所述附加层;
对所述阵列基板进行刻蚀,在暴露出的部分所述钝化层中形成像素电极过孔;
采用喷墨法在所述光阻材料容置部中填充彩膜材料,以形成彩膜层;
在所述像素电极过孔中形成像素电极。
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