CN103219273A - Wet method etching and bearing device and method - Google Patents
Wet method etching and bearing device and method Download PDFInfo
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- CN103219273A CN103219273A CN2013100820449A CN201310082044A CN103219273A CN 103219273 A CN103219273 A CN 103219273A CN 2013100820449 A CN2013100820449 A CN 2013100820449A CN 201310082044 A CN201310082044 A CN 201310082044A CN 103219273 A CN103219273 A CN 103219273A
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Abstract
The invention provides a wet method etching and bearing device and method. The wet method etching and bearing device comprises a wafer rolling device, a transmission device and a driving device. Wafers are placed on the wafer rolling device, the driving device drives the wafer rolling device to drive the wafers to rotate through the transmission device. The wafer rolling device comprises at least two rolling rods, a plurality of guide structures are arranged on each rolling rod, and the wafers are arranged in the guide structures in a rotatable mode. A bearing device in wet etching equipment is designed, the function of rotating the wafers of the bearing device is achieved, and therefore the wafers are made to evenly rotate on the bearing device. When the wafers are kept to rotate in constant speed, and meanwhile when the wafers enter and leave etching liquid, the fact that the etching liquid etches the wafers evenly is basically guaranteed. Moreover, according to etching to the wafers, the influence on the etching evenness of the wafers by different temperatures and concentrations of the etching liquid at the positions of liquid levels with different depths can be avoided.
Description
Technical field
The present invention relates to the silicon semiconductor device manufacturing installation, relate in particular to a kind of wet etching bearing device.
Background technology
Along with the development of semiconductor device technology and in proportion size dwindle, brought increasing influence for the uniformity of wafer.
Feel in the body device manufacturing process that existing wet etching can make wafer have surperficial uneven problem, promptly the big more uniformity of wafer that causes of rate of etch is poor more.And this problem can't be avoided fully at present.
In existing technology, thereby wafer makes wafer can enter or withdraw from the used etching groove of wet etching by moving up and down of bearing device, because the differing heights position sends into by bearing device that the time of etching there are differences behind the etching groove on the wafer, this will cause the be etched thickness of liquid etching of the crystal column surface at differing heights place on the wafer to exist difference, thereby has influenced the uniformity of etching.
Can prove this defective by analyzing, suppose that crystal column surface does not adsorb etching liquid, promptly wafer leaves the etching liquid surface does not have the residual of etching liquid.The diameter of wafer is 300mm, so the path length difference of wafer total 600mm when entering and pulling out the etching liquid surface.The rising of bearing device and the velocity interval of decline are generally 300mm/s-0mm/s, and different bearing devices may have different speed, and the bearing device general speed of selecting for use in wet etching is 150mm/s.If with the rate of etch of H3PO4 to Si3N4
Be example, just have a thickness difference between the highs and lows of wafer, be by equation expression:
So just have one between the highs and lows of wafer
Thickness difference.
In addition, the etching liquid in the etching groove has different temperature and concentration corresponding to different degree of depth places, and therefore, when carrying out wet-etching technology, the etching efficient to crystal column surface is also different at different degree of depth places for the etching liquid in the etching groove.
Chinese patent (application number: 201110392004.5) disclose a kind of from liquid formula wafer Wet-method etching device, comprise etching bath, etching solution, suction mist pipe and imbibition roller, wherein, the imbibition roller uniformly-spaced is installed in the last section in the etching bath equal altitudes, the liquid level of etching solution is higher than the lower surface of imbibition roller cylindrical, be lower than the axis of imbibition roller, inhaling the mist pipe is arranged between two imbibition rollers, and be positioned on the etching solution, under the imbibition roller cylindrical upper surface, on the cylindrical upper side of inhaling the mist pipe, be provided with suction hole, inhale the mist pipe and link to each other with induced-draught fan.The Wet-method etching device of this invention is realized etching to crystal column surface by imbibition roller absorption etching liquid, this device can be realized the even etching for crystal column surface in theory, but in actual mechanical process, for having relatively high expectations of absorption roller, can not guarantee when wafer rolls slide relative not to take place between different rollers, and can not guarantee the even of roller absorption etching solution.
Chinese patent (application number: 201120041290.6) disclose a kind of semiconductor Wet-method etching device.Include dynamical system, refrigerating system, operating desk, reactive tank, hold the gaily decorated basket of wafer.Arm is set on the gaily decorated basket, mechanical grasping mechanism is set on the arm.Reactive tank is placed on the operating desk, and the protective cover that adopts the acid-proof engineering plastics is set in the outside of operating desk, have the rectangle action pane on protective cover top, the front apron that adopts transparent acid-proof material is set on the rectangle action pane, the protective cover top is provided with gas skirt, its shape is horn mouth from the bottom to top shrinks, and at the top of gas skirt discharge duct is set.The storage window is set below operating desk.Though this device can solve the complicated unworkable problem of the equipment of conventional Wet-method etching device, the different problem of the uniformity when not solving the wafer etching.
So, remain the technical problem of being badly in need of solution in the present semiconductor technology for the control of the wafer uniformity in the wet etching.
Summary of the invention
In view of the above problems, the invention provides a kind of wet etching bearing device.
The technical scheme that technical solution problem of the present invention is adopted is:
A kind of wet etching bearing device is arranged on the lowering or hoisting gear in the wet-etching technology of wafer, wherein, comprises wafer tourelle, transmission device and drive unit;
Described wafer is positioned on the described wafer tourelle, and described drive unit drives described wafer by the described wafer tourelle of described actuator drives and rotates;
Wherein, described wafer tourelle comprises at least two rolling rods, is provided with a plurality of guide frames on the every described rolling rod, and described wafer places described guide frame rotationally.
Described wet etching bearing device, wherein, described drive unit is a motor.
Described wet etching bearing device, wherein, described rolling rod comprises first rolling rod, second rolling rod and the 3rd rolling rod;
Wherein, described wafer is fixed on the described wafer tourelle by described first rolling rod, described second rolling rod and described the 3rd rolling rod are rotatable, and described first rolling rod and/or described second rolling rod and/or described the 3rd rolling rod drive described wafer and move into capable rotation.
Described wet etching bearing device, wherein, described transmission device is a driving-belt;
Described motor drives described first rolling rod and/or described second rolling rod and/or described the 3rd rolling rod by described driving-belt and rotates.
Described wet etching bearing device, wherein, described bearing device also comprises fixed structure;
Described wafer tourelle is fixedly installed on the described lowering or hoisting gear by described fixed structure.
Described wet etching bearing device, wherein, described guide frame comprises a plurality of ring-type fixed blocks, and described ring-type fixed block is sheathed on the described rolling rod, and form gathering sill between two adjacent described ring-type fixed blocks, described wafer is rotating to be plugged in the described gathering sill.
Described wet etching bearing device, wherein, the width of described gathering sill bottom is less than the thickness of described wafer, and the width of described gathering sill open end is greater than the thickness of described wafer.
The wet etching bearing device of the described lifting silicon chip uniformity, wherein, the material of described each parts of bearing device is the material of antiacid caustic corrosion.
A kind of wet etching method that promotes the silicon chip uniformity, wherein, described method is applied to adopt as any described bearing device among the claim 1-8 carries out may further comprise the steps in the wet-etching technology of wafer:
Described wafer is positioned in the gathering sill of described bearing device;
Start described drive unit, described drive unit drives described wafer by the described wafer tourelle of described actuator drives and rotates;
Described lowering or hoisting gear drives described bearing device and descends, described wafer is immersed in fully in the etching liquid in the described wet-etching technology;
Wherein, described wafer all keeps the rotation of described wafer in the process of carrying out described wet-etching technology.
The wet etching method of the described lifting silicon chip uniformity, wherein, described wafer is when entering described etching solution and leaving described etching solution, all with identical speed uniform rotation.Technique scheme has following advantage or beneficial effect:
The present invention has given the function of bearing device rotation wafer, thereby has made wafer can carry out rotation at the uniform velocity on bearing device by the bearing device in the wet etching equipment is designed.When wafer enters when remaining a constant speed rotation and leaves etching liquid, can guarantee substantially etching liquid to the wafer etching time evenly, and, when wafer is immersed in the etching liquid fully, wafer still is in rotation status at the uniform velocity, at this moment, can overcome the temperature of etching liquid at etching liquid different depth liquid level place and the different influences of bringing for the wafer etching uniformity of concentration to the etching of wafer.
Description of drawings
With reference to appended accompanying drawing, to describe embodiments of the invention more fully.Yet appended accompanying drawing only is used for explanation and sets forth, and does not constitute limitation of the scope of the invention.
Fig. 1 is the structural representation of facing of bearing device of the present invention;
Fig. 2 is the plan structure schematic diagram of bearing device of the present invention;
Fig. 3 is the backsight structural representation of bearing device of the present invention.
Embodiment
A kind of wet etching bearing device of the present invention, the embodiment of apparatus of the present invention is as follows:
Bearing device (Lift) comprises wafer tourelle 1(Wafer Guide), transmission device 2 and drive unit.
Wherein, wafer tourelle 1 comprises at least two rolling rods, is that example is set forth the present invention with three rolling rods in the present embodiment, and therefore, the wafer tourelle comprises first rolling rod 11, second rolling rod 12 and the 3rd rolling rod 13.
Wherein, the surface of every rolling rod is provided with the several ringlike fixed block, be fixedly connected between ring-type fixed block and the rolling rod, form gathering sill 4 between the adjacent ring-type fixed block, the cross sectional shape of gathering sill 4 is the up big and down small bodily form, the width of its upper end is greater than the thickness of wafer, and the width of its lower end is less than the thickness of wafer.
For the ease of distinguishing, the ring-type fixed block that will be positioned at the first rolling rod surface is defined as the first ring-type fixed block, the ring-type fixed block that will be positioned at the second rolling rod surface is defined as the second ring-type fixed block, and the ring-type fixed block that will be positioned at the 3rd rolling rod surface is defined as the 3rd ring-type fixed block.
Wherein, several first ring-type fixed blocks 111 are arranged on the surface of first rolling rod 11 with identical spacing; Several second ring-type fixed blocks 121 are arranged on the surface of second rolling rod 12 with identical spacing; Several the 3rd ring-type fixed blocks 131 are arranged on the surface of the 3rd rolling rod 13 with identical spacing.
As Fig. 1 or shown in Figure 3, first rolling rod 11, second rolling rod 12 and the 3rd rolling rod 13 are connected by two T shape structures 65 that are provided with in its end, this T shape structure 6 comprises upper lateral structure 61 and bottom vertical structure 62, wherein, upper lateral structure 61 is connected by bearing 5 with the two ends of first rolling rod 11, second rolling rod 12 and the 3rd rolling rod 13 respectively; One end of bottom vertical structure 62 is fixedlyed connected with the middle part of upper lateral structure 61, and the other end is connected with the structure that elevating function is provided in the conventional wet etching equipment.
The present invention is to realize by following method and principle for the lifting of the surface evenness of wet etching wafer.
As shown in the figure, the some first annular fixed block 111, the some second annular fixed block 121 and the some the 3rd annular fixed block 131 can be set to cylindrical, be socketed on first rolling rod 11 respectively, the surface of second rolling rod 12 and the 3rd rolling rod 13, and between the some first ring-type fixed blocks 111 and first rolling rod 11, between the some second ring-type fixed blocks 121 and second rolling rod 12, be fixedly connected between some the 3rd ring-type fixed blocks 131 and the 3rd rolling rod 13, it is the variation that relative position does not take place between the some first ring-type fixed blocks 111 and first rolling rod 11, the variation of relative position does not take place between the some second annular fixed block 121 and second rolling rod 12, and the variation of relative position does not take place between some the 3rd ring-type fixed blocks 131 and the 3rd rolling rod 13.Wherein, the material of some first ring-type fixed blocks 111, some second ring-type fixed blocks 121 and some the 3rd ring-type fixed blocks 131 can be selected the high material of skin-friction coefficient for use, and this material is antiacid, the ability height of caustic corrosion.
Wafer is placed in the gathering sill 4, the ring-type fixed block that is positioned at gathering sill 4 both sides is fixed wafer, the power of bearing device of the present invention comes from drive unit, motor 3 in the drive unit rotates, thereby driving the connection belt that is sheathed on motor 3 reversing bars rolls, the rolling that connects belt drives sheathed with it rolling rod and rotates, the rotation of rolling rod is to rotate as axle certainly, the rotation of rolling rod drives the several ringlike fixed block that is positioned on it and rotates, wafer in the gathering sill 4 rotates between the ring-type fixed block thereby drive, and the friction in rotation process between wafer and the ring-type fixed block is rolling friction substantially.Be connected by bearing 5 between the T shape structure 6 of rolling rod and below, thus can make rolling rod not only kept self rotation but also with kept being connected of on T shape structure 6 fixed position.
Because, the power of apparatus of the present invention comes from a motor 3, and rotation is to be sent on the every connecting rod by connecting belt, therefore, wafer by apparatus of the present invention in the process of rotation, all identical with the direction of rotation and the speed of some first ring-type fixed blocks 111, some second ring-type fixed blocks 121 and some the 3rd ring-type fixed blocks 131 of crystal round fringes contact.
Below bearing device of the present invention, be provided with the etching groove routinely, bearing device of the present invention is connected with the structure that elevating function is provided of wet etching equipment by the bottom vertical structure 62 in the bottom T shape structure 6, makes this bearing device can change the position of wafer when keeping the wafer rotation.
The present invention also comprises a kind of wet etching method that promotes the wafer uniformity, and this method comprises the steps:
Described wafer is positioned in the gathering sill 4 of described bearing device;
Start the described drive unit of described bearing device, make described drive unit, thereby drive the rotation of described wafer by the described tourelle of described actuator drives;
Described T shape structure 6 in the described bearing device is connected with lowering or hoisting gear in the wet etching equipment;
Make described lowering or hoisting gear drive described bearing device and descend, thereby make described wafer be immersed in the etching liquid fully;
Keep the slewing rate of described wafer constant, it is rotated further in described etching liquid;
After technology to be etched is finished, continue to keep the uniform rotation of wafer, and make described wafer leave described etching liquid.
The rotation that the inventive method remains a constant speed in the etching groove by wafer, thus the temperature of the etching liquid at different depth place in the etching groove and the different problem of concentration can be avoided.
In addition, wafer is entering etching liquid liquid level and leaving in the process of etching liquid liquid level, owing to be in the uniform rotation always, is 300mm with the diameter of wafer, and the speed of lifting structure is 150mm/s, and H3PO4 is to the etching rate of Si3N4
The etch thicknesses difference of locating of wafer highs and lows is example, so can be approximately
In sum, this improves the wet etching bearing device and the method for the wafer uniformity by the present invention, can effectively improve the problem of the surface evenness difference of wafer in the conventional wet etching technics, carve serious, controlled relatively poor to figure thereby overcome in the wet-etching technology to bore, can not be used for the problem of little characteristic size.
For a person skilled in the art, read above-mentioned explanation after, various changes and modifications undoubtedly will be apparent.Therefore, appending claims should be regarded whole variations and the correction of containing true intention of the present invention and scope as.Any and all scope of equal value and contents all should be thought still to belong in the intent of the present invention and the scope in claims scope.
Claims (10)
1. wet etching bearing device is arranged on the lowering or hoisting gear in the wet-etching technology of wafer, it is characterized in that, comprises wafer tourelle, transmission device and drive unit;
Described wafer is positioned on the described wafer tourelle, and described drive unit drives described wafer by the described wafer tourelle of described actuator drives and rotates;
Wherein, described wafer tourelle comprises at least two rolling rods, is provided with a plurality of guide frames on the every described rolling rod, and described wafer places described guide frame rotationally.
2. wet etching bearing device as claimed in claim 1 is characterized in that, described drive unit is a motor.
3. wet etching bearing device as claimed in claim 2 is characterized in that, described rolling rod comprises first rolling rod, second rolling rod and the 3rd rolling rod;
Wherein, described wafer is fixed on the described wafer tourelle by described first rolling rod, described second rolling rod and described the 3rd rolling rod are rotatable, and described first rolling rod and/or described second rolling rod and/or described the 3rd rolling rod drive described wafer and move into capable rotation.
4. wet etching bearing device as claimed in claim 3 is characterized in that, described transmission device is a driving-belt;
Described motor drives described first rolling rod and/or described second rolling rod and/or described the 3rd rolling rod by described driving-belt and rotates.
5. wet etching bearing device as claimed in claim 1 is characterized in that described bearing device also comprises fixed structure;
Described wafer tourelle is fixedly installed on the described lowering or hoisting gear by described fixed structure.
6. wet etching bearing device as claimed in claim 1, it is characterized in that, described guide frame comprises a plurality of ring-type fixed blocks, described ring-type fixed block is sheathed on the described rolling rod, and form gathering sill between two adjacent described ring-type fixed blocks, described wafer is rotating to be plugged in the described gathering sill.
7. wet etching bearing device as claimed in claim 6 is characterized in that, the width of described gathering sill bottom is less than the thickness of described wafer, and the width of described gathering sill open end is greater than the thickness of described wafer.
8. the wet etching bearing device of the lifting wafer uniformity as claimed in claim 1 is characterized in that, the material of described each parts of bearing device is the material of antiacid caustic corrosion.
9. a wet etching method that promotes the wafer uniformity is characterized in that, described method is applied to adopt as any described bearing device among the claim 1-8 carries out may further comprise the steps in the wet-etching technology of wafer:
Described wafer is positioned in the gathering sill of described bearing device;
Start described drive unit, described drive unit drives described wafer by the described wafer tourelle of described actuator drives and rotates;
Described lowering or hoisting gear drives described bearing device and descends, described wafer is immersed in fully in the etching liquid in the described wet-etching technology;
Wherein, described wafer all keeps the rotation of described wafer in the process of carrying out described wet-etching technology.
10. the wet etching method of the lifting wafer uniformity as claimed in claim 9 is characterized in that, described wafer is when entering described etching solution and leaving described etching solution, all with identical speed uniform rotation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013100820449A CN103219273A (en) | 2013-03-14 | 2013-03-14 | Wet method etching and bearing device and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013100820449A CN103219273A (en) | 2013-03-14 | 2013-03-14 | Wet method etching and bearing device and method |
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| CN103219273A true CN103219273A (en) | 2013-07-24 |
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| CN2013100820449A Pending CN103219273A (en) | 2013-03-14 | 2013-03-14 | Wet method etching and bearing device and method |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106702496A (en) * | 2015-07-20 | 2017-05-24 | 有研半导体材料有限公司 | Device and method for eliminating surface damage of silicon wafer through acid etching |
| CN107946229A (en) * | 2017-11-21 | 2018-04-20 | 长江存储科技有限责任公司 | Lifting gear for wafer etching |
| CN107968060A (en) * | 2017-11-21 | 2018-04-27 | 长江存储科技有限责任公司 | Reactive tank for wafer etching |
| CN110620066A (en) * | 2019-09-06 | 2019-12-27 | 上海华力集成电路制造有限公司 | Groove type wet etching machine table and method for performing wet etching by using same |
| CN113544835A (en) * | 2019-01-31 | 2021-10-22 | 弗劳恩霍夫应用研究促进协会 | Apparatus and method for processing wafer |
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| US3964957A (en) * | 1973-12-19 | 1976-06-22 | Monsanto Company | Apparatus for processing semiconductor wafers |
| JP2006032640A (en) * | 2004-07-15 | 2006-02-02 | Komatsu Electronic Metals Co Ltd | Etching apparatus for semiconductor wafer |
| CN102246277A (en) * | 2008-11-04 | 2011-11-16 | Lg矽得荣株式会社 | Apparatus and method for wet-processing object, and fluid diffusion plate and barrel used therein |
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2013
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3964957A (en) * | 1973-12-19 | 1976-06-22 | Monsanto Company | Apparatus for processing semiconductor wafers |
| JP2006032640A (en) * | 2004-07-15 | 2006-02-02 | Komatsu Electronic Metals Co Ltd | Etching apparatus for semiconductor wafer |
| CN102246277A (en) * | 2008-11-04 | 2011-11-16 | Lg矽得荣株式会社 | Apparatus and method for wet-processing object, and fluid diffusion plate and barrel used therein |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106702496A (en) * | 2015-07-20 | 2017-05-24 | 有研半导体材料有限公司 | Device and method for eliminating surface damage of silicon wafer through acid etching |
| CN106702496B (en) * | 2015-07-20 | 2019-01-25 | 有研半导体材料有限公司 | A kind of device and method of acid corrosion removal silicon wafer surface damage |
| CN107946229A (en) * | 2017-11-21 | 2018-04-20 | 长江存储科技有限责任公司 | Lifting gear for wafer etching |
| CN107968060A (en) * | 2017-11-21 | 2018-04-27 | 长江存储科技有限责任公司 | Reactive tank for wafer etching |
| CN107946229B (en) * | 2017-11-21 | 2021-01-26 | 长江存储科技有限责任公司 | Lifting device for be used for wafer sculpture |
| CN113544835A (en) * | 2019-01-31 | 2021-10-22 | 弗劳恩霍夫应用研究促进协会 | Apparatus and method for processing wafer |
| CN110620066A (en) * | 2019-09-06 | 2019-12-27 | 上海华力集成电路制造有限公司 | Groove type wet etching machine table and method for performing wet etching by using same |
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Application publication date: 20130724 |