CN107946229B - Lifting device for be used for wafer sculpture - Google Patents
Lifting device for be used for wafer sculpture Download PDFInfo
- Publication number
- CN107946229B CN107946229B CN201711167865.7A CN201711167865A CN107946229B CN 107946229 B CN107946229 B CN 107946229B CN 201711167865 A CN201711167865 A CN 201711167865A CN 107946229 B CN107946229 B CN 107946229B
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- wafer
- guide bar
- gear
- guide
- cylindrical gear
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- ing And Chemical Polishing (AREA)
Abstract
The invention belongs to the technical field of semiconductors, and particularly relates to a lifting device for wafer etching. The lifting device for wafer etching comprises a lifting rod and a supporting piece fixedly connected with the lifting rod, wherein gear transmission units are arranged on the lifting rod and the supporting piece, a guide unit used for supporting and enabling a wafer to rotate is further arranged on the supporting piece, and the output end of the gear transmission unit is in transmission connection with the input end of the guide unit so as to drive the guide unit to complete rotation of the wafer. By using the lifting device for wafer etching, the wafer in the etching process can be rotated, the surface of the wafer is effectively and uniformly etched, and the surface quality of the wafer is improved.
Description
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to a lifting device for wafer etching.
Background
In the prior art, when a wafer is etched by a wet process, the whole wafer needs to be soaked in a wafer etching reaction tank and fixed on a wafer support. Because the acid liquor in the acid tank of the immersion cleaning machine is supplied from the bottom of the reaction tank and overflows from the top of the reaction tank, and the acid liquor reacts with the film on the wafer all the time in the process, the local concentration of the top of the acid tank is lower than that of the bottom of the acid tank, namely the acid liquor etching rate of the bottom of the acid tank is higher than that of the top of the acid tank. When the etching process time of the wafer is short, the etching nonuniformity of the wafer surface is not obvious, but when the wafer is soaked in the acid tank solution for a long time, the etching nonuniformity of the wafer surface is obvious, which is shown in that the etching rate of the wafer bottom is high and the etching rate of the wafer top is low.
Disclosure of Invention
The present invention is directed to solving at least one of the problems set forth above, and the object is achieved by the following means.
The lifting device for wafer etching comprises a lifting rod and a supporting piece fixedly connected with the lifting rod, wherein gear transmission units are arranged on the lifting rod and the supporting piece, a guide unit used for supporting and enabling a wafer to rotate is further arranged on the supporting piece, and the output end of the gear transmission unit is in transmission connection with the input end of the guide unit so as to drive the guide unit to complete rotation of the wafer.
Further, the supporting member includes a first supporting member and a second supporting member, the first supporting member is fixedly connected to the top of the lifting rod, the second supporting member is fixedly connected to the side of the second supporting member, and the guiding unit is rotatably connected to the bottom of the second supporting member.
Further, the gear transmission unit comprises a first cylindrical gear, a second cylindrical gear, a third cylindrical gear, a first conical gear and a second conical gear, the first cylindrical gear is arranged at the top of the lifting rod, the second cylindrical gear and the third cylindrical gear are jointly arranged at the top of the first supporting piece, the second cylindrical gear is meshed with the first cylindrical gear, the third cylindrical gear is meshed with the second cylindrical gear, the first conical gear is arranged at the bottom of the third cylindrical gear through a connecting rod and is coaxially arranged with the third cylindrical gear, the second conical gear is arranged on the side face of the second supporting piece and is meshed with the first conical gear, and the end face of the second conical gear is connected with the input end of the guide unit.
Further, the first cylindrical gear, the second cylindrical gear and the third cylindrical gear are all straight gears.
Furthermore, the guide unit comprises a first guide rod, a second guide rod and a third guide rod, the first end of the first guide rod penetrates through the second support piece and is connected with the end face of the second bevel gear, the first end of the first guide rod can rotate with the second support piece, the first ends of the second guide rod and the third guide rod also penetrate through the second support piece and can rotate with the second support piece, and the second ends of the first guide rod, the second guide rod and the third guide rod are used for supporting the wafer.
Further, an isosceles triangle is set among the first guide rod, the second guide rod and the third guide rod, and the second guide rod and the third guide rod are located at the same vertical height and are higher than the first guide rod.
Furthermore, the first guide rod, the second guide rod and the third guide rod are all provided with sealing bearings, and the sealing bearings are fixedly connected to the second supporting piece.
Furthermore, a plurality of positioning grooves capable of supporting the wafer are arranged on the outer circumferential surfaces of the first guide rod, the second guide rod and the third guide rod.
Further, the guide rod connecting frame is further included, and the second ends of the first guide rod, the second guide rod and the third guide rod are connected to the guide rod connecting frame together.
Further, acid-proof coatings are arranged on the first guide rod, the second guide rod and the third guide rod.
By using the lifting device for wafer etching, the wafer in the etching process can be rotated, the surface of the wafer is effectively and uniformly etched, and the surface quality of the wafer is improved.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Also, like reference numerals are used to refer to like parts throughout the drawings. In the drawings:
FIG. 1 is a schematic front view of an embodiment of the present invention;
FIG. 2 is a schematic diagram of a side view of the embodiment of FIG. 1;
fig. 3 is a top view of the embodiment of fig. 1.
The reference symbols in the drawings denote the following:
11: lifter, 12: first support, 13: a second support member;
21: first cylindrical gear, 22: second cylindrical gear, 23: third cylindrical gear, 24: first conical gear, 25: a second conical gear;
31: first guide bar, 32: second guide bar, 33: a third guide bar;
40: the guide bar link span.
Detailed Description
Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
Fig. 1 is a schematic front view of the structure according to the embodiment of the present invention. FIG. 2 is a schematic diagram of a side view of the embodiment shown in FIG. 1. Fig. 3 is a top view of the embodiment of fig. 1. As shown in the drawings, the lifting device for wafer etching in this embodiment includes a lifting rod 11, a first supporting member 12 and a second supporting member 13, the first supporting member 12 is fixedly connected to the top of the lifting rod 11, the second supporting member 13 is fixedly connected to the side surface of the first supporting member 12, and the guiding unit is rotatably connected to the bottom of the second supporting member 13.
As shown in fig. 2 and 3, the gear transmission unit includes a first cylindrical gear 21, a second cylindrical gear 22, a third cylindrical gear 23, a first conical gear 24, and a second conical gear 25. The first cylindrical gear 21 is arranged at the top of the lifting rod 11, the second cylindrical gear 22 and the third cylindrical gear 23 are jointly arranged at the top of the first supporting piece 12, the second cylindrical gear 22 is meshed with the first cylindrical gear 21, the third cylindrical gear 23 is meshed with the second cylindrical gear 22, the first conical gear 24 is arranged at the bottom of the third cylindrical gear 23 through a connecting rod and is coaxially arranged with the third cylindrical gear 23, the second conical gear 25 is arranged on the side surface of the second supporting piece 13 and is meshed with the first conical gear 24, and the end surface of the second conical gear 5 is connected with the input end of the guiding unit.
The first cylindrical gear 21, the second cylindrical gear 22 and the third cylindrical gear 23 are all straight gears.
The gear transmission has the advantages of good meshing performance, stable transmission, low noise and the like, and can effectively ensure the transmission ratio and enable the rotation of the wafer in the etching process to be more stable and accurate. The transmission ratios of the first cylindrical gear 21, the second cylindrical gear 22, the third cylindrical gear 23, the first conical gear 24 and the second conical gear 25 are set to enable the wafer to rotate at least one circle in the etching process.
In this embodiment, the first cylindrical gear 21 is connected to an output shaft of the motor, and the first cylindrical gear 21 rotates with the rotation of the motor. The rotation of the first cylindrical gear 21 drives the third cylindrical gear 23 to rotate together through the second cylindrical gear 22, and the rotation speed ratio can be set according to actual needs. Since the first conical gear 24 is fixed to the bottom of the third cylindrical gear 23 through a connecting rod and is disposed coaxially with the third cylindrical gear 23, the first conical gear 24 also rotates with the third cylindrical gear 23. The second bevel gear 25 is engaged with the first bevel gear 24 to complete the conversion of the rotational motion around the vertical axis into the rotational motion around the horizontal axis, thereby driving the guide unit to rotate and completing the rotation of the wafer.
Further, the guide unit in the present embodiment includes a first guide lever 31, a second guide lever 32, and a third guide lever 33. The first end of the first guide rod 31 passes through the second support 13 and is connected with the end face of the second bevel gear 25, the first end of the first guide rod 31 can rotate with the second support 13, the first ends of the second guide rod 32 and the third guide rod 33 also pass through the second support 13 and can rotate with the second support 13, and the second ends of the first guide rod 31, the second guide rod 32 and the third guide rod 33 are used for supporting the wafer.
In the present embodiment, the first ends of the first guide lever 31, the second guide lever 32, and the third guide lever 33 are all left ends of the positions shown in fig. 2, and the second ends of the first guide lever 31, the second guide lever 32, and the third guide lever 33 are all right ends of the positions shown in fig. 2. The wafer is arranged among the first guide rod 31, the second guide rod 32 and the third guide rod 33, and the first guide rod 31 rotates along with the rotation of the second bevel gear 25 and serves as a power output shaft for rotating the wafer. When the wafer rotates, because a certain friction exists between the surface of the wafer and the second guide rod 32 and the third guide rod 33, and the second guide rod 32 and the third guide rod 33 can rotate with the second support 13, the wafer can drive the second guide rod 32 and the third guide rod 33 to rotate together while rotating.
Further, in order to better complete the supporting and rotating of the wafer, the first guide bar 31, the second guide bar 32, and the third guide bar 33 are configured as an isosceles triangle. The second guide bar 32 and the third guide bar 33 are at the same vertical height and higher than the first guide bar 31.
As shown in fig. 1, the first guide rod 31, the second guide rod 32 and the third guide rod 33 are set to be isosceles triangles, and the first guide rod 31 is lower than the second guide rod 32 and the third guide rod 33, so that the wafer is uniformly stressed in the rotation process, and the surface of the wafer is more uniformly etched.
Further, since the portions of the second ends of the first guide bar 31, the second guide bar 32, and the third guide bar 33 that protrude out of the second support 13 are excessively long, shaking is likely to occur during the rotation. In order to ensure the uniformity and reliability of the wafer etching process, the second ends of the first guide rod 31, the second guide rod 32 and the third guide rod 33 are fixedly connected to the guide rod connecting frame 40. As shown in fig. 1, three corners of the guide link connecting frame 40 are respectively provided with bearings capable of being respectively matched with the second ends of the first guide link 31, the second guide link 32 and the third guide link 33, and the second ends of the first guide link 31, the second guide link 32 and the third guide link 33 pass through the bearings, so that the mutual positions among the first guide link 31, the second guide link 32 and the third guide link 33 are fixed, and the rotation of the first guide link 31, the second guide link 32 and the third guide link 33 can be realized.
Further, the first guide rod 31, the second guide rod 32 and the third guide rod 22 in this embodiment are all provided with bearings, and the bearings are fixedly connected to the second support 13.
The first guide lever 31, the second guide lever 32, and the third guide lever 33 pass through the bearings, thereby completing smooth rotation of the first guide lever 31, the second guide lever 32, and the third guide lever 33.
In the present embodiment, since the first guide bar 31, the second guide bar 32, and the third guide bar 33 are in the acid solution for a long period of time, in order to improve the reliability of the apparatus, the surfaces of the first guide bar 31, the second guide bar 32, and the third guide bar 33 are coated with the corrosion-resistant coating.
Further, in order to drive the wafer to rotate, a plurality of positioning grooves capable of supporting and rotating the wafer are disposed on the outer circumferential surfaces of the first guide rod 31, the second guide rod 32 and the third guide rod 33. The arrangement of the positioning grooves can enable the first guide rod 31, the second guide rod 32 and the third guide rod 33 to drive the wafers to rotate, and meanwhile, the wafers on each guide rod can be prevented from moving to influence the etching quality of the wafers.
By using the lifting device for wafer etching, the wafer in the etching process can be rotated, the surface of the wafer is effectively and uniformly etched, and the surface quality of the wafer is improved.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (8)
1. A lifting device for wafer etching is characterized by comprising a lifting rod and a supporting piece fixedly connected with the lifting rod, wherein gear transmission units are arranged on the lifting rod and the supporting piece respectively, a guide unit used for supporting and enabling a wafer to rotate is further arranged on the supporting piece, the supporting piece comprises a first supporting piece and a second supporting piece, the first supporting piece is fixedly connected to the top of the lifting rod, the second supporting piece is fixedly connected to the side surface of the first supporting piece, the guide unit is connected to the bottom of the second supporting piece in a rotatable mode, the gear transmission unit comprises a first cylindrical gear, a second cylindrical gear, a third cylindrical gear, a first conical gear and a second conical gear, the first cylindrical gear is arranged at the top of the lifting rod, and the second cylindrical gear and the third cylindrical gear are arranged at the top of the first supporting piece together, the second cylindrical gear is meshed with the first cylindrical gear, the third cylindrical gear is meshed with the second cylindrical gear, the first conical gear is arranged at the bottom of the third cylindrical gear through a connecting rod and is coaxially arranged with the third cylindrical gear, the second conical gear is arranged on the side face of the second supporting piece and is meshed with the first conical gear, and the end face of the second conical gear is connected with the input end of the guide unit, so that the guide unit is driven to rotate the wafer.
2. The lifting device for wafer etching as recited in claim 1, wherein the first spur gear, the second spur gear, and the third spur gear are spur gears.
3. The lifting device for wafer etching as claimed in claim 1, wherein the guiding unit comprises a first guiding rod, a second guiding rod and a third guiding rod, a first end of the first guiding rod passes through the second support and is connected with an end face of the second bevel gear, the first end of the first guiding rod can rotate with the second support, first ends of the second guiding rod and the third guiding rod also pass through the second support and can rotate with the second support, and second ends of the first guiding rod, the second guiding rod and the third guiding rod are used for supporting the wafer.
4. The lifting device for wafer etching as recited in claim 3, wherein the first guide bar, the second guide bar and the third guide bar are set to be isosceles triangles, and the second guide bar and the third guide bar are at the same vertical height and higher than the first guide bar.
5. The lifting device for wafer etching as recited in claim 4, wherein the first guide bar, the second guide bar and the third guide bar are provided with bearings, and the bearings are fixedly connected to the second support member.
6. The lifting device for wafer etching as claimed in claim 3, wherein a plurality of positioning grooves capable of supporting the wafer are arranged on the outer circumferential surface of the first guide bar, the second guide bar and the third guide bar.
7. The lifting device for wafer etching as recited in claim 3, further comprising a guide bar connecting frame, wherein the second ends of the first guide bar, the second guide bar and the third guide bar are commonly connected to the guide bar connecting frame.
8. The lifting device for wafer etching as recited in claim 3, wherein the first guide bar, the second guide bar and the third guide bar are provided with an acid-proof coating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711167865.7A CN107946229B (en) | 2017-11-21 | 2017-11-21 | Lifting device for be used for wafer sculpture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711167865.7A CN107946229B (en) | 2017-11-21 | 2017-11-21 | Lifting device for be used for wafer sculpture |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107946229A CN107946229A (en) | 2018-04-20 |
| CN107946229B true CN107946229B (en) | 2021-01-26 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711167865.7A Active CN107946229B (en) | 2017-11-21 | 2017-11-21 | Lifting device for be used for wafer sculpture |
Country Status (1)
| Country | Link |
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| CN (1) | CN107946229B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111477561A (en) * | 2019-01-23 | 2020-07-31 | 弘塑科技股份有限公司 | Batch substrate wet processing device and batch substrate wet processing method |
| CN110931401B (en) * | 2020-01-02 | 2022-06-03 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Wafer box rotating device and wafer box rotating and lifting equipment |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0694957A1 (en) * | 1994-07-29 | 1996-01-31 | Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | Apparatus for wet processing of semiconductor wafers |
| CN1191385A (en) * | 1997-02-21 | 1998-08-26 | 佳能株式会社 | Wafer processing apparatus, wafer processing method, and semiconductor substrate fabrication method |
| TW200608486A (en) * | 2004-07-15 | 2006-03-01 | Komatsu Denshi Kinzoku Kk | Etching apparatus for semiconductor wafer (1) |
| CN102246277A (en) * | 2008-11-04 | 2011-11-16 | Lg矽得荣株式会社 | Apparatus and method for wet-processing object, and fluid diffusion plate and barrel used therein |
| CN103219273A (en) * | 2013-03-14 | 2013-07-24 | 上海华力微电子有限公司 | Wet method etching and bearing device and method |
-
2017
- 2017-11-21 CN CN201711167865.7A patent/CN107946229B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0694957A1 (en) * | 1994-07-29 | 1996-01-31 | Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | Apparatus for wet processing of semiconductor wafers |
| CN1191385A (en) * | 1997-02-21 | 1998-08-26 | 佳能株式会社 | Wafer processing apparatus, wafer processing method, and semiconductor substrate fabrication method |
| TW200608486A (en) * | 2004-07-15 | 2006-03-01 | Komatsu Denshi Kinzoku Kk | Etching apparatus for semiconductor wafer (1) |
| CN102246277A (en) * | 2008-11-04 | 2011-11-16 | Lg矽得荣株式会社 | Apparatus and method for wet-processing object, and fluid diffusion plate and barrel used therein |
| CN103354213A (en) * | 2008-11-04 | 2013-10-16 | Lg矽得荣株式会社 | Wafer treatment apparatus and barrel used therein |
| CN103219273A (en) * | 2013-03-14 | 2013-07-24 | 上海华力微电子有限公司 | Wet method etching and bearing device and method |
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| CN107946229A (en) | 2018-04-20 |
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