CN103178180A - Novel metal electrode gasket with low cost and high conductivity, and preparation method of gasket - Google Patents
Novel metal electrode gasket with low cost and high conductivity, and preparation method of gasket Download PDFInfo
- Publication number
- CN103178180A CN103178180A CN2013100990628A CN201310099062A CN103178180A CN 103178180 A CN103178180 A CN 103178180A CN 2013100990628 A CN2013100990628 A CN 2013100990628A CN 201310099062 A CN201310099062 A CN 201310099062A CN 103178180 A CN103178180 A CN 103178180A
- Authority
- CN
- China
- Prior art keywords
- metal electrode
- preparation
- novel metal
- layer
- gasket
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
The invention provides a novel metal electrode gasket with low cost and high conductivity, and a preparation method of the gasket. The metal electrode gasket is structurally and sequentially composed of a substrate, an extension layer, a support layer and a contact layer from bottom to top. The invention further relates to a preparation method of the gasket. The preparation method comprises the following steps of: step 1, primary evaporation treatment; step 2, secondary evaporation treatment; step 3, plasma ashing treatment; and step 4, ternary evaporation treatment. The metal electrode gasket disclosed by the invention is simple in structure, low in cost, high in conductivity and obvious in effect; the method is easy to realize; and the product prepared by the method is unlikely to oxidize, good in ductility, good in softening property, and good in application prospect.
Description
Technical field
The invention belongs to technical field of semiconductors, particularly, relate to novel metal electrode pads of a kind of low-cost high conductivity and preparation method thereof.
Background technology
Along with the progress of semiconductor science and technology, LED has now possessed the output of high brightness, adds that LED has that power saving, volume are little, low voltage drive and the advantage such as not mercurous, so LED has been widely used in the fields such as display and illumination.
As everyone knows, gold (Au) electrical properties is stable, low resistance, good ohmic contact, for LED electrically and reliability great key impact property is arranged; Gold (Au) has the oxidation of being difficult for simultaneously, and ductility is good, flexibility is good, is conducive to packaging and routing; But because the gold cost is expensive, processing technology is limited again, so its scope of application has been received restriction.
But for conductivity, silver, copper, aluminium are all much better than gold, and cost is low.But silver, copper, aluminium, in processing technology, a lot of problems can appear, the easy oxidation of metal requires harsh to storage condition, need to apply larger ultrasonic energy and bonding pressure during the encapsulation bonding, cause easily causing chip to split, the application of force is too small, the situation that bonding wire does not weld easily occurs, produce and be difficult to control has been had a strong impact on production efficiency.
At present, also there is no to satisfy simultaneously product to require.
Summary of the invention
For defective of the prior art, the purpose of this invention is to provide a kind of novel metal electrode pads its preparation method of low-cost high conductivity.
First aspect the invention provides a kind of novel metal electrode pads of low-cost high conductivity, and the structure of described metal electrode pad is followed successively by substrate, ductile layer, supporting layer and contact layer from bottom to top.
Preferably, described substrate is one or more the mixing in Cr, Pt, Ti, Ag, Pd, Ni, ITO, IZO, IGZO.
Preferably, described supporting layer is one or more the mixing in Ag, Cu, Al, Au.
Preferably, described contact layer is Au.
Second aspect the invention still further relates to the preparation method of aforesaid novel metal electrode pads, and described production method comprises the steps:
Step 1, a vapor deposition treatment;
Step 2, the secondary vapor deposition treatment;
Step 3, plasma ashing is processed;
Step 4, three vapor deposition treatment get final product.
Preferably, in step 1, the evaporation that a described evaporation is described substrate layer.
Preferably, in step 2, described secondary evaporation is the evaporation of described ductile layer and supporting layer.
Preferably, in step 4, the evaporation that described three evaporations are described ductile layer, supporting layer and contact layer.
Compared with prior art, the present invention has following beneficial effect: the electrode pads that this patent adopts the technology of special design structure and the resistance of plasma ashing matting to combine and make, not only significantly reduce chip production cost, improved the conductance of product, and can guarantee that again product is difficult for oxidation when encapsulation, thereby extended the useful life of product, can also increase good, the soft performance of ductility of product simultaneously; The present invention is simple in structure, and cost is low, and conductance is high, successful, and method easily realizes, and the product that its method makes is difficult for oxidation, and ductility is good, softness is good, and application prospect is preferably arranged.
Embodiment
The present invention is described in detail below in conjunction with specific embodiment.Following examples will help those skilled in the art further to understand the present invention, but not limit in any form the present invention.Should be pointed out that to those skilled in the art, without departing from the inventive concept of the premise, can also make some distortion and improvement.These all belong to protection scope of the present invention.
Embodiment 1
The present embodiment relates to a kind of novel metal electrode pads of low-cost high conductivity, and the structure of described metal electrode pad is followed successively by substrate, ductile layer, supporting layer and contact layer from bottom to top.
Further, described substrate is any one in Cr, Pt, Ti, Ag, Pd, Ni, ITO, IZO, IGZO.
Further, described supporting layer is any one in Ag, Cu, Al, Au.
Further, described contact layer is Au.
The present embodiment also relates to the preparation method of aforesaid novel metal electrode pads, and described preparation method comprises the steps:
Step 1, a vapor deposition treatment;
Step 2, the secondary vapor deposition treatment;
Step 3, plasma ashing is processed;
Step 4, three vapor deposition treatment get final product.
Further, in step 1, the evaporation that a described evaporation is described substrate layer.
Further, in step 2, described secondary evaporation is the evaporation of described ductile layer and supporting layer.
Further, in step 4, the evaporation that described three evaporations are described ductile layer, supporting layer and contact layer.
Embodiment 2
The present embodiment relates to a kind of novel metal electrode pads of low-cost high conductivity, and the structure of described metal electrode pad is followed successively by substrate, ductile layer, supporting layer and contact layer from bottom to top.
Further, described substrate is any mixing in Cr, Pt, Ti, Ag, Pd, Ni, ITO, IZO, IGZO.
Further, described supporting layer is any mixing in Ag, Cu, Al, Au.
Further, described contact layer is Au.
The present embodiment also relates to the preparation method of aforesaid novel metal electrode pads, and described preparation method comprises the steps:
Step 1, a vapor deposition treatment;
Step 2, the secondary vapor deposition treatment;
Step 3, plasma ashing is processed;
Step 4, three vapor deposition treatment get final product.
Further, in step 1, the evaporation that a described evaporation is described substrate layer.
Further, in step 2, described secondary evaporation is the evaporation of described ductile layer and supporting layer.
Further, in step 4, the evaporation that described three evaporations are described ductile layer, supporting layer and contact layer.
In sum, this patent adopts the electrode structure of particular design and the technology of plasma ashing matting resistance to combine, not only significantly reduce chip production cost, improved the conductance of product, and can guarantee again to be difficult for oxidation in when encapsulation, extend the useful life of product, can also increase good, the soft performance of ductility of product simultaneously; The present invention is simple in structure, and cost is low, and conductance is high, successful, and method easily realizes, and the product that its method makes is difficult for oxidation, and ductility is good, softness is good, and application prospect is preferably arranged.
Above specific embodiments of the invention are described.It will be appreciated that, the present invention is not limited to above-mentioned specific implementations, and those skilled in the art can make various distortion or modification within the scope of the claims, and this does not affect flesh and blood of the present invention.
Claims (8)
1. the novel metal electrode pads of a low-cost high conductivity, is characterized in that, the structure of described metal electrode pad is followed successively by substrate, ductile layer, supporting layer and contact layer from bottom to top.
2. the novel metal electrode pads of low-cost high conductivity as claimed in claim 1, is characterized in that, described substrate is one or more the mixing in Cr, Pt, Ti, Ag, Pd, Ni, ITO, IZO, IGZO.
3. the novel metal electrode pads of low-cost high conductivity as claimed in claim 1, is characterized in that, described supporting layer is one or more the mixing in Ag, Cu, Al, Au.
4. the novel metal electrode pads of low-cost high conductivity as claimed in claim 1, is characterized in that, described contact layer is Au.
5. the preparation method of a novel metal electrode pads as claimed in claim 1, is characterized in that, described preparation method comprises the steps:
Step 1, a vapor deposition treatment;
Step 2, the secondary vapor deposition treatment;
Step 3, plasma ashing is processed;
Step 4, three vapor deposition treatment get final product.
6. the preparation method of novel metal electrode pads according to claim 5, is characterized in that, in step 1, and the evaporation that a described evaporation is described substrate layer.
7. the preparation method of novel metal electrode pads according to claim 5, is characterized in that, in step 2, described secondary evaporation is the evaporation of described ductile layer and supporting layer.
8. the preparation method of novel metal electrode pads according to claim 5, is characterized in that, in step 4, and the evaporation that described three evaporations are described ductile layer, supporting layer and contact layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013100990628A CN103178180A (en) | 2013-03-26 | 2013-03-26 | Novel metal electrode gasket with low cost and high conductivity, and preparation method of gasket |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013100990628A CN103178180A (en) | 2013-03-26 | 2013-03-26 | Novel metal electrode gasket with low cost and high conductivity, and preparation method of gasket |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103178180A true CN103178180A (en) | 2013-06-26 |
Family
ID=48637916
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2013100990628A Pending CN103178180A (en) | 2013-03-26 | 2013-03-26 | Novel metal electrode gasket with low cost and high conductivity, and preparation method of gasket |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103178180A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1330416A (en) * | 2000-06-30 | 2002-01-09 | 株式会社东芝 | Semiconductor light-emitting component and its manufacturing mehtod and semiconductor luminescent device |
| US20020020856A1 (en) * | 1997-01-14 | 2002-02-21 | Nec Corporation | Contact electrode for n-type gallium nitride-based compound semiconductor and method for forming the same |
| CN102130259A (en) * | 2011-01-14 | 2011-07-20 | 大连美明外延片科技有限公司 | Composite electrode of light-emitting diode chip and manufacturing methods thereof |
-
2013
- 2013-03-26 CN CN2013100990628A patent/CN103178180A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020020856A1 (en) * | 1997-01-14 | 2002-02-21 | Nec Corporation | Contact electrode for n-type gallium nitride-based compound semiconductor and method for forming the same |
| CN1330416A (en) * | 2000-06-30 | 2002-01-09 | 株式会社东芝 | Semiconductor light-emitting component and its manufacturing mehtod and semiconductor luminescent device |
| CN102130259A (en) * | 2011-01-14 | 2011-07-20 | 大连美明外延片科技有限公司 | Composite electrode of light-emitting diode chip and manufacturing methods thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102254886A (en) | Lead bonding-free IGBT (Insulated Gate Bipolar Translator) module | |
| WO2020108365A1 (en) | Igbt half-bridge module structure | |
| CN103840054A (en) | Light-emitting-diode chip | |
| CN103346225A (en) | Vertical type graphene LED chip | |
| WO2014101338A1 (en) | Low-parasitic-inductance igbt power module | |
| CN207664056U (en) | A kind of electrode and light-emitting diode chip for backlight unit of light-emitting diode chip for backlight unit | |
| CN205845937U (en) | A kind of front electrode of compression joint type IGBT/FRD chip | |
| CN111129249B (en) | Deep ultraviolet light-emitting diode and preparation method thereof | |
| CN103178180A (en) | Novel metal electrode gasket with low cost and high conductivity, and preparation method of gasket | |
| CN107731981A (en) | A kind of nitride semiconductor luminescent element | |
| CN201681969U (en) | Low-power LED packaging structure | |
| CN105244425A (en) | Flip-chip LED (light-emitting diode) chip and manufacturing method for electrodes of flip-chip LED chip | |
| CN105185881A (en) | Light-emitting diode and manufacture method thereof | |
| CN104733602A (en) | Package Structure Of Light Emitting Diode | |
| CN203883034U (en) | Bonding wire free type LED chip | |
| CN203415610U (en) | Vertical type graphene LED chip | |
| TWI317162B (en) | ||
| CN203721756U (en) | Flipchip-type LED chip | |
| CN202013885U (en) | LED (Light Emitting Diode) integrated packaging device arranged at upper and lower of electrode | |
| CN202084572U (en) | Ohmic contact electrode of nitride light emitting diode | |
| CN201780996U (en) | LED packaging structure | |
| CN206992110U (en) | A kind of double-side LED chip | |
| CN202712257U (en) | Ceramic base material LED light source module support | |
| JP2008186920A5 (en) | ||
| CN104701153B (en) | A kind of production method for metal electrode and its device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20130626 |