WO2014101338A1 - Low-parasitic-inductance igbt power module - Google Patents

Low-parasitic-inductance igbt power module Download PDF

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Publication number
WO2014101338A1
WO2014101338A1 PCT/CN2013/071344 CN2013071344W WO2014101338A1 WO 2014101338 A1 WO2014101338 A1 WO 2014101338A1 CN 2013071344 W CN2013071344 W CN 2013071344W WO 2014101338 A1 WO2014101338 A1 WO 2014101338A1
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WO
WIPO (PCT)
Prior art keywords
chip
igbt
bridge arm
substrate
diode chip
Prior art date
Application number
PCT/CN2013/071344
Other languages
French (fr)
Chinese (zh)
Inventor
蔡超峰
盛况
汪涛
郭清
谢刚
Original Assignee
浙江大学
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Publication date
Application filed by 浙江大学 filed Critical 浙江大学
Publication of WO2014101338A1 publication Critical patent/WO2014101338A1/en

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/168—Modifications for eliminating interference voltages or currents in composite switches
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    • H01L23/492—Bases or plates or solder therefor
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Definitions

  • the invention relates to an IGBT power module. Background technique
  • an IGBT module device usually includes one or more pairs of IGBT chips to form a single or multiple bridge arms for use in inverter circuits and the like.
  • switching speeds and switching frequencies are continuously improved to minimize losses and improve performance.
  • the loop inductance is usually reduced by compressing the loop area as much as possible.
  • the switching process is still affected by the loop inductance inside the IGBT module, making the consideration of loop inductance more important in module design.
  • the IGBT module and its own inverted diode are generally placed directly on the same copper substrate, instead of considering the parasitic inductance from the perspective of the dynamic loop.
  • the IGBT and the diode in the loop are placed close to each other, and the parasitic inductance is reduced by direct crimping or direct adjacent placement. Summary of the invention
  • the technical problem to be solved by the present invention is to provide an IGBT power with low parasitic inductance.
  • the module which is suitable for all IGBT power modules with reversed diodes, significantly reduces the parasitic inductance of the loop.
  • a low parasitic inductance IGBT power module comprising a first switching loop and a second switching loop that are mutually commutated, wherein: the first switching loop includes an upper bridge arm IGBT The chip and the lower arm are combined with the diode chip, and the second switching circuit comprises a lower arm IGBT chip and an upper arm anti-diode chip; the lower arm anti-parallel diode chip is crimped on the surface of the upper arm IGBT chip, and the lower arm is reversed The cathode of the diode chip is directly connected to the emitter of the upper arm IGBT chip, eliminating the loop area and parasitic inductance introduced by the wire bonding.
  • the surface of the upper arm IGBT chip leads the first switching circuit through the first bonding wire.
  • the center of the bridge arm, the anode of the lower arm and the diode chip is led out to the ground through the second wire, the upper arm IGBT chip is crimped on the first substrate, and the first substrate is directly used as the high voltage end of the lead-out module;
  • the arm IGBT chip and the upper arm anti-parallel diode chip are respectively placed on the adjacent second substrate and the third substrate, and the second substrate is used as the second switching circuit.
  • the third substrate is connected to the cathode of the upper arm and the diode chip, the emitter of the lower arm IGBT chip is led out to the ground through the third bonding wire, and the upper arm is connected to the diode chip through the fourth bonding wire.
  • the low parasitic inductance IGBT power module comprises one or more sets of the first switching circuit and the second switching circuit.
  • the first bonding wire, the second bonding wire, the third bonding wire, and the fourth bonding wire are all solder wires; the first bonding wire, the second bonding wire, the third bonding wire, and the fourth bonding wire may also adopt other Material, and any diameter wire can be used.
  • the first substrate, the second substrate, and the third substrate are all copper substrates;
  • a substrate of a metal material can also be applied to the IGBT power module of the present invention, and there is no limitation on the thickness of the substrate.
  • the beneficial effects of the present invention are:
  • the IGBT power module of the present invention is suitable for an IGBT power module of an anti-diode, and any combination of an IGBT chip and any type of anti-parallel diode can be used.
  • the invention adopts a reverse crimping method to minimize the inductance in the loop to the maximum, so that the switching loop in the application avoids excessive oscillations and spikes.
  • the invention reduces the module. The occupied area of the chip, so as to reduce the size of the module, to bring convenience to practical applications.
  • FIG. 1 is a schematic structural view of a first switching circuit of the present invention.
  • FIG. 2 is a schematic structural view of a second switching circuit of the present invention.
  • FIG 3 is a circuit diagram of a complete bridge arm in the IGBT module of the present invention.
  • the label 1 a first substrate, 2 - upper arm IGBT chip, 3 - lower arm reverse diode chip, 4 - first bonding wire, 5 - second bonding wire, 6 - second substrate, 7 - Lower arm IGBT chip, 8 - upper arm reverse diode chip, 9 - third substrate, 10 - third bonding wire, 11 - first switching circuit, 12 - second switching circuit, 13 - fourth bonding wire.
  • the upper arm IGBT chip 2 and the lower arm decoupling diode chip 3 constitute a first switching circuit 11, wherein the lower surface of the upper arm IGBT chip 2 is a collector, and the upper surface is an emitter, wherein Also includes a separate gate surface; lower arm anti-diode core
  • the upper surface of the sheet 3 is an anode, and the lower surface is a cathode.
  • the area of the lower bridge arm and the diode chip 3 is smaller than the area of the upper arm IGBT chip 2.
  • the lower arm anti-parallel diode chip 3 is directly crimped to the surface of the upper arm IGBT chip 2 by soldering, so that the anode of the lower arm reverses the diode chip 3 is directly connected to the emitter of the upper arm IGBT chip 2, thereby eliminating the need for The loop area and parasitic inductance introduced by the wire bonding, the first bonding wire 4 is taken out from the excess surface of the upper arm IGBT chip 2 to obtain the center of the bridge arm, and the second bonding wire 5 is connected to the lower arm and the diode chip 3
  • the anode leads to the ground end of the module, and the upper arm IGBT chip 2 is crimped onto the first substrate 1.
  • the first substrate 1 is directly used as the high voltage end of the lead-out module.
  • the lower arm IGBT chip 7 and the upper arm decoupling diode chip 8 constitute a second switching circuit 12, and the emitter and collector of the lower arm IGBT chip 7 are located on the upper surface, and the upper arm is reversed.
  • the upper surface of the diode chip 8 is a cathode, and the lower surface is an anode.
  • the lower arm IGBT chip 7 is directly soldered on the second substrate 6, and the upper arm reverse diode chip 8 is soldered to the third.
  • the second substrate 6 and the third substrate 9 are placed adjacent to each other, and the path of the adjacent circuit is reduced as much as possible, and the third bonding wire 10 is connected to the emitter of the lower arm IGBT chip 7 to be taken as the ground terminal of the module.
  • the fourth bonding wire 13 is connected to the anode of the second substrate 6 and the upper bridge and the diode chip 8.
  • the anode of the upper arm is reversed and the anode of the diode chip 8 is connected to the collector of the lower arm IGBT chip 7, and the second substrate 6 is connected.
  • the third substrate 9 is connected to the cathode of the upper arm and the diode chip 8, and serves as the high voltage end of the lead-out module.
  • the IGBT module of the present invention can adopt any packaging process and packaging material, and all the above-mentioned bonding wires can be made of welding wires of different materials and different diameters, such as soldering wires,
  • the substrate may also be a substrate of different thickness or different materials, such as a copper substrate.
  • the first switching circuit 11 and the second switching circuit 12 are combined into a switching commutating circuit of a complete IGBT power module, and the area and parasitic inductance of the two circuits are minimized by the structural design of the two circuits. .

Abstract

A low-parasitic-inductance IGBT (insulated gate bipolar transistor) power module is provided. The low-parasitic-inductance IGBT power module comprises an upper bridge arm IGBT chip (2), a lower bridge arm IGBT chip (7), an upper bridge arm reverse diode chip (8) and a lower bridge arm reverse diode chip (3), wherein the lower bridge arm reverse diode chip (3)is pressed on the surface of the upper bridge arm IGBT chip (2), and the cathode of the lower bridge arm reverse diode chip (3) is directly connected with the emitter of the upper bridge arm IGBT chip (2), and the lower bridge arm IGBT chip (7) and the upper bridge arm reverse diode chip (8) are respectively placed on adjacent substrates. Random-type IGBT chips are utilized to combine with random-type reverse diodes. On one hand, inductance in a circuit is reduced to the minimum to the greatest extend via a reverse pressing method so as to avoid excessive oscillation and peak in a switch circuit in an application, and on the other hand, the occupation area of chips in a module is reduced; thereby the purpose for reducing size of the module is achieved, and practical application is facilitated.

Description

一种低寄生电感的 IGBT功率模块 技术领域  IGBT power module with low parasitic inductance
本发明涉及 IGBT功率模块。 背景技术  The invention relates to an IGBT power module. Background technique
作为重要的功率半导体器件， IGBT模块器件通常包括一对或者 多对 IGBT芯片， 从而形成单独或者多个桥臂， 用于逆变电路等多种 场合。 随着功率电路的逐步发展， 开关速度和开关频率被不断的提高 以最大程度的降低损耗， 提升工作性能。 在开关过程中， 为了有效地 提高开关速度， 同时不引起回路振荡， 通常会通过尽可能压缩回路面 积来减小回路电感。 然而即使最大程度的压缩电路回路， 开关过程依 然会受到 IGBT模块内部的回路电感的影响， 使得对回路电感的考虑 在模块设计显得愈发的重要。  As an important power semiconductor device, an IGBT module device usually includes one or more pairs of IGBT chips to form a single or multiple bridge arms for use in inverter circuits and the like. With the gradual development of power circuits, switching speeds and switching frequencies are continuously improved to minimize losses and improve performance. In the switching process, in order to effectively increase the switching speed without causing loop oscillation, the loop inductance is usually reduced by compressing the loop area as much as possible. However, even with the largest degree of compression circuit loop, the switching process is still affected by the loop inductance inside the IGBT module, making the consideration of loop inductance more important in module design.
在目前大量的 IGBT模块中， 普遍将 IGBT模块与自身反并的二 极管直接放在同一块铜基板上，而不是从动态回路的角度考虑寄生电 感的因素。 而在本发明中， 从一个模块中的每个动态回路出发， 将回 路中的 IGBT和二极管靠近放置， 采用直接压接或直接相邻放置的办 法缩小寄生电感。 发明内容  In the current large number of IGBT modules, the IGBT module and its own inverted diode are generally placed directly on the same copper substrate, instead of considering the parasitic inductance from the perspective of the dynamic loop. In the present invention, starting from each dynamic loop in a module, the IGBT and the diode in the loop are placed close to each other, and the parasitic inductance is reduced by direct crimping or direct adjacent placement. Summary of the invention
本发明所要解决的技术问题是提供一种低寄生电感的 IGBT功率 模块， 其适用于所有反并二极管的 IGBT功率模块， 能明显降低回路 的寄生电感。 The technical problem to be solved by the present invention is to provide an IGBT power with low parasitic inductance. The module, which is suitable for all IGBT power modules with reversed diodes, significantly reduces the parasitic inductance of the loop.
本发明解决技术问题所采用的技术方案是： 一种低寄生电感的 IGBT功率模块， 包括相互换流的第一开关回路和第二开关回路， 其 特征是： 第一开关回路包括上桥臂 IGBT芯片、 下桥臂反并二极管芯 片， 第二开关回路包括下桥臂 IGBT芯片、 上桥臂反并二极管芯片； 下桥臂反并二极管芯片压接在上桥臂 IGBT芯片表面， 下桥臂反并二 极管芯片的阴极与上桥臂 IGBT芯片的发射极直接相连， 省去了通过 焊线连接所引入的回路面积和寄生电感， 上桥臂 IGBT芯片的表面通 过第一焊线引出第一开关回路的桥臂中心，下桥臂反并二极管芯片的 阳极通过第二焊线引出接地端，上桥臂 IGBT芯片压接在第一基板上， 第一基板直接用作引出模块的高压端； 下桥臂 IGBT芯片与上桥臂反 并二极管芯片分别置于相邻放置的第二基板和第三基板上，第二基板 作为第二开关回路的桥臂中心，第三基板连接上桥臂反并二极管芯片 的阴极， 下桥臂 IGBT芯片的发射极通过第三焊线引出接地端， 上桥 臂反并二极管芯片通过第四焊线连接第二基板。  The technical solution adopted by the present invention to solve the technical problem is: A low parasitic inductance IGBT power module, comprising a first switching loop and a second switching loop that are mutually commutated, wherein: the first switching loop includes an upper bridge arm IGBT The chip and the lower arm are combined with the diode chip, and the second switching circuit comprises a lower arm IGBT chip and an upper arm anti-diode chip; the lower arm anti-parallel diode chip is crimped on the surface of the upper arm IGBT chip, and the lower arm is reversed The cathode of the diode chip is directly connected to the emitter of the upper arm IGBT chip, eliminating the loop area and parasitic inductance introduced by the wire bonding. The surface of the upper arm IGBT chip leads the first switching circuit through the first bonding wire. The center of the bridge arm, the anode of the lower arm and the diode chip is led out to the ground through the second wire, the upper arm IGBT chip is crimped on the first substrate, and the first substrate is directly used as the high voltage end of the lead-out module; The arm IGBT chip and the upper arm anti-parallel diode chip are respectively placed on the adjacent second substrate and the third substrate, and the second substrate is used as the second switching circuit. In the center of the bridge arm, the third substrate is connected to the cathode of the upper arm and the diode chip, the emitter of the lower arm IGBT chip is led out to the ground through the third bonding wire, and the upper arm is connected to the diode chip through the fourth bonding wire. Substrate.
进一步地， 所述的低寄生电感的 IGBT功率模块包括上述的一组 或多组第一开关回路和第二开关回路。  Further, the low parasitic inductance IGBT power module comprises one or more sets of the first switching circuit and the second switching circuit.
作为优选， 第一焊线、 第二焊线、 第三焊线、 第四焊线均为锡焊 丝； 第一焊线、第二焊线、第三焊线、第四焊线也可以采用其他材料， 且可以选用任意直径大小的焊线。  Preferably, the first bonding wire, the second bonding wire, the third bonding wire, and the fourth bonding wire are all solder wires; the first bonding wire, the second bonding wire, the third bonding wire, and the fourth bonding wire may also adopt other Material, and any diameter wire can be used.
作为优选， 第一基板、 第二基板、 第三基板均为铜制基板； 其他 金属材料的基板也可以适用于本发明的 IGBT功率模块， 且对基板的 厚度没有限制。 Preferably, the first substrate, the second substrate, and the third substrate are all copper substrates; A substrate of a metal material can also be applied to the IGBT power module of the present invention, and there is no limitation on the thickness of the substrate.
本发明的有益效果是： 本发明的 IGBT功率模块适用于反并二极 管的 IGBT功率模块， 可以采用任意类型的 IGBT芯片与任意类型的 反并二极管的组合。 一方面， 本发明采用反向压接的办法， 最大限度 的将回路中的电感降到最低，使得应用中的开关回路避免出现过大的 振荡和尖峰， 另一方面， 本发明减小了模块中芯片的占用面积， 从而 达到降低模块尺寸的目的， 为实际应用带来便利。 附图说明  The beneficial effects of the present invention are: The IGBT power module of the present invention is suitable for an IGBT power module of an anti-diode, and any combination of an IGBT chip and any type of anti-parallel diode can be used. On the one hand, the invention adopts a reverse crimping method to minimize the inductance in the loop to the maximum, so that the switching loop in the application avoids excessive oscillations and spikes. On the other hand, the invention reduces the module. The occupied area of the chip, so as to reduce the size of the module, to bring convenience to practical applications. DRAWINGS
图 1为本发明的第一开关回路的结构示意图。  FIG. 1 is a schematic structural view of a first switching circuit of the present invention.
图 2为本发明的第二开关回路的结构示意图。  2 is a schematic structural view of a second switching circuit of the present invention.
图 3为本发明的 IGBT模块中一个完整的桥臂电路图。  3 is a circuit diagram of a complete bridge arm in the IGBT module of the present invention.
图中标号： 1一第一基板， 2—上桥臂 IGBT芯片， 3—下桥臂反 并二极管芯片， 4一第一焊线， 5—第二焊线， 6—第二基板， 7—下桥 臂 IGBT芯片， 8—上桥臂反并二极管芯片， 9一第三基板， 10—第三 焊线， 11一第一开关回路， 12—第二开关回路， 13—第四焊线。 具体实施方式  In the figure, the label: 1 a first substrate, 2 - upper arm IGBT chip, 3 - lower arm reverse diode chip, 4 - first bonding wire, 5 - second bonding wire, 6 - second substrate, 7 - Lower arm IGBT chip, 8 - upper arm reverse diode chip, 9 - third substrate, 10 - third bonding wire, 11 - first switching circuit, 12 - second switching circuit, 13 - fourth bonding wire. detailed description
如图 1所示， 上桥臂 IGBT芯片 2和下桥臂反并二极管芯片 3构 成第一开关回路 11 , 其中， 上桥臂 IGBT芯片 2的下表面为集电极， 上表面为发射极， 其中还包括独立的门极表面； 下桥臂反并二极管芯 片 3的上表面为阳极， 下表面为阴极， 下桥臂反并二极管芯片 3的面 积小于上桥臂 IGBT芯片 2的面积。 As shown in FIG. 1, the upper arm IGBT chip 2 and the lower arm decoupling diode chip 3 constitute a first switching circuit 11, wherein the lower surface of the upper arm IGBT chip 2 is a collector, and the upper surface is an emitter, wherein Also includes a separate gate surface; lower arm anti-diode core The upper surface of the sheet 3 is an anode, and the lower surface is a cathode. The area of the lower bridge arm and the diode chip 3 is smaller than the area of the upper arm IGBT chip 2.
下桥臂反并二极管芯片 3通过焊锡直接压接在上桥臂 IGBT芯片 2的表面， 使得下桥臂反并二极管芯片 3的阳极直接与上桥臂 IGBT 芯片 2的发射极相连，从而省去了焊线连接所引入的回路面积和寄生 电感， 第一焊线 4从上桥臂 IGBT芯片 2多余的表面引出， 获得桥臂 中心， 第二焊线 5连接下桥臂反并二极管芯片 3的阳极， 向外引出模 块的接地端， 上桥臂 IGBT芯片 2压接在第一基板 1上， 第一基板 1 直接用作引出模块的高压端。  The lower arm anti-parallel diode chip 3 is directly crimped to the surface of the upper arm IGBT chip 2 by soldering, so that the anode of the lower arm reverses the diode chip 3 is directly connected to the emitter of the upper arm IGBT chip 2, thereby eliminating the need for The loop area and parasitic inductance introduced by the wire bonding, the first bonding wire 4 is taken out from the excess surface of the upper arm IGBT chip 2 to obtain the center of the bridge arm, and the second bonding wire 5 is connected to the lower arm and the diode chip 3 The anode leads to the ground end of the module, and the upper arm IGBT chip 2 is crimped onto the first substrate 1. The first substrate 1 is directly used as the high voltage end of the lead-out module.
如图 2所示， 下桥臂 IGBT芯片 7和上桥臂反并二极管芯片 8构 成第二开关回路 12, 下桥臂 IGBT芯片 7的发射极和集电极都位于上 表面， 上桥臂反并二极管芯片 8的上表面为阴极， 下表面为阳极， 在 第二开关回路中， 直接将下桥臂 IGBT芯片 7焊接在第二基板 6上， 将上桥臂反并二极管芯片 8焊接在第三基板 9上，第二基板 6和第三 基板 9相邻放置， 并尽可能减小相邻回路的路径， 第三焊线 10连接 下桥臂 IGBT芯片 7的发射极，作为模块的接地端引出， 第四焊线 13 连接第二基板 6与上桥臂反并二极管芯片 8的阳极，实现上桥臂反并 二极管芯片 8的阳极与下桥臂 IGBT芯片 7的集电极相连， 第二基板 6直接作为桥臂中心， 第三基板 9连接上桥臂反并二极管芯片 8的阴 极， 用作引出模块的高压端。  As shown in FIG. 2, the lower arm IGBT chip 7 and the upper arm decoupling diode chip 8 constitute a second switching circuit 12, and the emitter and collector of the lower arm IGBT chip 7 are located on the upper surface, and the upper arm is reversed. The upper surface of the diode chip 8 is a cathode, and the lower surface is an anode. In the second switching circuit, the lower arm IGBT chip 7 is directly soldered on the second substrate 6, and the upper arm reverse diode chip 8 is soldered to the third. On the substrate 9, the second substrate 6 and the third substrate 9 are placed adjacent to each other, and the path of the adjacent circuit is reduced as much as possible, and the third bonding wire 10 is connected to the emitter of the lower arm IGBT chip 7 to be taken as the ground terminal of the module. The fourth bonding wire 13 is connected to the anode of the second substrate 6 and the upper bridge and the diode chip 8. The anode of the upper arm is reversed and the anode of the diode chip 8 is connected to the collector of the lower arm IGBT chip 7, and the second substrate 6 is connected. Directly as the center of the bridge arm, the third substrate 9 is connected to the cathode of the upper arm and the diode chip 8, and serves as the high voltage end of the lead-out module.
本发明的 IGBT模块可以采用任意的封装工艺和封装材料， 上述 的所有焊线均可采用不同材料、 不同直径的焊线， 例如锡焊线， 上述 的基板也均可采用不同厚度、 不同材料的基板， 例如铜制基板。 如图 3所示，第一开关回路 11和第二开关回路 12组合成完整的 IGBT功率模块的开关换流回路， 通过两个回路的结构设计， 将两个 回路的面积和寄生电感减低到最小。 The IGBT module of the present invention can adopt any packaging process and packaging material, and all the above-mentioned bonding wires can be made of welding wires of different materials and different diameters, such as soldering wires, The substrate may also be a substrate of different thickness or different materials, such as a copper substrate. As shown in FIG. 3, the first switching circuit 11 and the second switching circuit 12 are combined into a switching commutating circuit of a complete IGBT power module, and the area and parasitic inductance of the two circuits are minimized by the structural design of the two circuits. .
上述具体实施例用于结合附图对本发明的技术方案作进一步具 体说明，但并不能将本发明的范围局限于具体实施方式的内容。 本领 域技术人员应该认识到，本发明涵盖了权利要求书范围内所有可能包 括的所有备选方案、 改进方案和等效方案。  The above specific embodiments are intended to further illustrate the technical solutions of the present invention with reference to the accompanying drawings, but the scope of the present invention is not limited to the specific embodiments. Those skilled in the art will recognize that the present invention encompasses all alternatives, modifications, and equivalents that may be included within the scope of the claims.

Claims

权 利 要 求 书 Claims
、 一种低寄生电感的 IGBT功率模块， 包括相互换流的第一开关回 路 (11)和第二开关回路 (12), 其特征是： 第一开关回路 (11)包括上 桥臂 IGBT芯片（2)、下桥臂反并二极管芯片（3),第二开关回路 (12) 包括下桥臂 IGBT 芯片（7)、 上桥臂反并二极管芯片（8); 下桥臂 反并二极管芯片（3)压接在上桥臂 IGBT 芯片（2)表面， 下桥臂反 并二极管芯片（3)的阴极与上桥臂 IGBT 芯片（2)的发射极直接相 连， 上桥臂 IGBT 芯片（2)的表面通过第一焊线 (4)引出第一开关 回路的桥臂中心， 下桥臂反并二极管芯片（3)的阳极通过第二焊 线 (5)引出接地端， 上桥臂 IGBT芯片（2)压接在第一基板 (1)上； 下桥臂 IGBT 芯片（7)与上桥臂反并二极管芯片（8)分别置于相邻 放置的第二基板 (6)和第三基板 (9)上， 第二基板 (6)作为第二开关 回路的桥臂中心， 第三基板 (9)连接上桥臂反并二极管芯片（8)的 阴极， 下桥臂 IGBT芯片（7)的发射极通过第三焊线 (10)引出接地 端， 上桥臂反并二极管芯片（8)通过第四焊线 (13)连接第二基板 (6)。 An IGBT power module with low parasitic inductance, comprising a first switching circuit (11) and a second switching circuit (12) that are mutually commutated, wherein: the first switching circuit (11) comprises an upper bridge IGBT chip ( 2), the lower arm reverses the diode chip (3), and the second switching circuit (12) includes a lower arm IGBT chip (7), an upper arm reverse diode chip (8); a lower arm reverse diode chip ( 3) crimped on the surface of the upper arm IGBT chip (2), the cathode of the lower arm reverse diode chip (3) is directly connected to the emitter of the upper arm IGBT chip (2), and the upper arm IGBT chip (2) The surface of the bridge arm of the first switching circuit is drawn through the first bonding wire (4), and the anode of the lower arm and the diode chip (3) is led out to the ground through the second bonding wire (5), and the upper arm IGBT chip ( 2) crimping on the first substrate (1); the lower arm IGBT chip (7) and the upper arm decoupling diode chip (8) are respectively placed on the adjacent second substrate (6) and the third substrate ( 9) upper, the second substrate (6) serves as the center of the bridge arm of the second switching circuit, and the third substrate (9) is connected to the upper arm and the diode core The cathode of the chip (8), the emitter of the lower arm IGBT chip (7) is led out to the ground through the third bonding wire (10), and the upper arm is reversed by the diode chip (8) through the fourth bonding wire (13). Two substrates (6).
、 根据权利要求 1所述的一种低寄生电感的 IGBT功率模块， 其特 征是： 所述 IGBT功率模块包括一组或多组第一开关回路和第二 开关回路。 A low parasitic inductance IGBT power module according to claim 1, wherein: said IGBT power module comprises one or more sets of first switching circuits and second switching circuits.
、 根据权利要求 1所述的一种低寄生电感的 IGBT功率模块， 其特 征是： 第一焊线 (4)、 第二焊线 (5)、 第三焊线 (10)、 第四焊线 (13) 均为锡焊丝。 The low parasitic inductance IGBT power module according to claim 1, characterized by: a first bonding wire (4), a second bonding wire (5), a third bonding wire (10), and a fourth bonding wire (13) All are tin wire.
、 根据权利要求 1所述的一种低寄生电感的 IGBT功率模块， 其特 征是： 第一基板 (1)、 第二基板 (6)、 第三基板 (9)均为铜制基板。 A low parasitic inductance IGBT power module according to claim 1, wherein The first substrate (1), the second substrate (6), and the third substrate (9) are all copper substrates.
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CN111627899A (en) * 2020-06-03 2020-09-04 成都森未科技有限公司 Integrated IGBT packaging structure based on DBC layout
CN111627899B (en) * 2020-06-03 2023-05-02 成都森未科技有限公司 Integrated IGBT packaging structure based on DBC layout

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