CN103178037A - 电子部件与电子装置 - Google Patents

电子部件与电子装置 Download PDF

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CN103178037A
CN103178037A CN2012104295101A CN201210429510A CN103178037A CN 103178037 A CN103178037 A CN 103178037A CN 2012104295101 A CN2012104295101 A CN 2012104295101A CN 201210429510 A CN201210429510 A CN 201210429510A CN 103178037 A CN103178037 A CN 103178037A
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splicing ear
electronic unit
protective layer
circuit board
electronic
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CN103178037B (zh
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作山诚树
赤松俊也
今泉延弘
上西启介
八坂健一
酒井彻
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Fujitsu Ltd
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Abstract

本发明提供电子部件和电子装置。所述电子部件的连接端子的表面上覆盖有由AgSn合金制成的保护层。电子部件焊接到电路板的连接端子。

Description

电子部件与电子装置
技术领域
本文讨论的实施方案涉及电子部件和电子装置。
背景技术
近年来，随着半导体器件(LSI：大规模集成电路)性能和集成度的改进，这种半导体器件中连接端子的数目倾向于增加，并且越来越要求进一步减小连接端子的尺寸。
倒装芯片安装中，半导体器件的连接端子和配线板的连接端子通过使用焊料凸点连接到彼此。这样的焊料凸点是由合金(焊料)制成的，如Sn-3.5wt％Ag、Sn-0.7wt％Cu或Sn-3wt％Ag-0.5wt％Cu。同时，半导体器件和配线板的连接端子通常由Cu(铜)制成。为了防腐蚀，或为了改善焊料在端子表面上的浸润性，连接端子的表面有时镀有Ni(镍)或Au(金)。
[专利文件1]日本特许公开公报10-41621
发明内容
实施方案的一个目标是提供电子部件和电子装置，这样的电子部件和电子装置即使在具有高电流密度的电流流动通过连接端子与焊料之间的接合点时，也不太可能造成电迁移。
根据所披露技术的第一方面，电子部件包含要被焊接到不同电子部件的连接端子，其中所述连接端子的表面覆盖有由AgSn合金制成的保护层。
根据所披露技术的第二方面，电子装置包含电子部件；电路板，所述电子部件安装在所述电路板上；以及将所述电子部件的连接端子接合到所述电路板的连接端子的焊料，其中所述电子部件的所述连接端子与所述电路板的所述连接端子中的至少一个的表面覆盖有由AgSn合金制成的保护层。
附图说明
图1A和1B为描绘在150℃的温度环境下，在由Cu制成的连接端子之间施加电流密度为6×10-3A/cm2的电流时，考查随时间变化的Cu分布的结果的图；
图2A和2B为描绘在与图1A和1B中所用类似的条件下，在连接端子的表面镀有Ni的情况下，考查随时间变化的Ni分布的结果的图；
图3A为描绘根据一实施方案的电子部件的实施例的图，而图3B为描绘电子部件的连接端子的一部分的放大图；
图4为描绘电子部件的连接端子与电路板的连接端子之间的接合点的图；
图5A至5C为示意性描绘实施例及对比实施例1和2的样品的图；
图6为描述实施例及对比实施例1和2的样品中造成配线断开的时间的考查结果的图；以及
图7为描述的AgSn合金中Ag含量与造成配线断开的时间之间的关系的考查结果的图。
具体实施方式
为了便于理解实施方案，在描述实施方案之前，下文将给出前序性说明。
如前文所述，近年来，电子部件(如半导体器件)的连接端子倾向于尺寸减小，以及因此流动通过连接端子的电流的密度(电流密度)倾向于增加。然而，当流动通过连接端子的电流的密度变得大于等于约104A/cm2时，连接端子与焊料之间的接合点会发生电迁移，由此增加连接端子之间的电阻值。极端的情况中，这种电迁移会导致配线断开。
图1A和1B为描绘在通过使用焊料凸起将由Cu制成的连接端子接合到彼此，并在150℃的温度环境下在连接端子之间施加电流密度为6×10-3A/cm2的电流时，考查Cu随时间分布的结果的图。这里直流电从上方连接端子流动到下方连接端子。注意，使用电子探针微量分析仪(EPMA)获取Cu分布。
如从图1A和1B明显可见，连接端子中含有的Cu原子随时间从下面(低电势侧)迁移到上面(高电势侧)。Cu原子迁移之后的位点构成原子空位。当大量这样的原子空位生成时，这样的空位可被集体称为电迁移。
图2A和2B为描绘在与图1A和1B中所用类似的条件下，在连接端子的表面镀有Ni的情况下，考查随时间变化的Ni分布的结果的图。如从图2A和2B明显可见，Ni原子随时间从下面迁移到上面。因此，Ni镀覆不能防止电迁移。
抑制这种电迁移能想到的选择是增加连接端子的数目，并因此减小每个连接端子中的电流密度。然而，这导致用于连接端子的布线空间的增加，其结果是半导体装置尺寸的增加。
鉴于以上，实施方案的目标是提供电子部件和电子装置，这样的电子部件和电子装置即使在具有高电流密度的电流流动通过连接端子与焊料之间的接合点时，也不太可能造成电迁移。
(实施方案)
图3A为描绘根据一实施方案的电子部件的实施例的图，图3B为描绘电子部件的连接端子的一部分的放大图。同时，图4为描绘电子部件的连接端子与电路板的连接端子之间的接合点的图。
根据该实施方案的电子部件10包含设置有给定电子电路的半导体芯片11a，以及密封半导体芯片11a的封装(密封树脂)11b。同时，在半导体芯片11a的下表面侧上设置一定数目的连接端子12。连接端子12由Cu制成，并且在连接端子12的每个表面上设置由AgSn(银-锡)合金制成的保护层13。
这里，化学稳定的Ag3Sn优选用作所述AgSn合金，以形成保护层13。
保护层13的厚度优选为3微米至100微米。如果保护层13的厚度落在3微米以下，这样的保护层13可含有针孔。这使得难以完全覆盖Cu电极，并因此不能足以防止Cu电迁移。另一方面，如果保护层13的厚度超过100微米，这样的保护层13会减小电导率，并对电子电路有不利影响。
同时，电路板20包括形成为给定图案的配线(未绘出)，以及连接端子22(参见图4)。电路板20的每个连接端子22也由Cu制成，由AgSn合金制成的保护层23设置在其表面上。此外，电子部件10的连接端子12通过使用焊料25接合到电路板20的连接端子22。焊料25由例如，Sn-3.5wt％Ag合金制成。
该实施方案中，连接端子12和22的表面覆盖有保护层13和23，如上文所述，保护层13和23每个均由AgSn制成。从而，抑制了电迁移。在下文描述所述抑制的原因。
电迁移与扩散系数有关系。更精确地说，具有较大扩散系数的元素更容易造成电迁移。160℃时，Cu在Sn中的扩散系数等于2.4×10-11m2/s，而Ni在Sn中的扩散系数等于5.4×10-13m2/s。另一方面，Ag在Sn中的扩散系数等于9.0×10-15m2/s，这比Cu的小了四个数量级，比Ni的小了两个数量级。换言之，当施加高密度电流时，相比较Cu或Ni，Ag在Sn中较不容易迁移，并且较不容易生成导致电迁移的原子空位。
同时，Sn在Ag中具有几乎与Ag相同的扩散系数。而且，Sn在小于等于160℃的温度范围时固溶于Ag中。由于这些原因，归因于在接触端子之间流动的电流造成的Ag的迁移生成的原子空位被Sn填埋。因此，这种情况中甚至更不容易发生电迁移。
如上文所述，该实施方案中，连接端子12和22的表面覆盖有保护层13和23，保护层13和23每个均由AgSn合金制成。因此，即使当在连接端子12和22之间的电流具有高电流密度，Cu原子在连接端子12和22中的迁移以及Ag原子在保护层13和23中的迁移得到抑制，由此较不容易发生电迁移。以此方式，诸如因电迁移造成的电阻值的增加以及发生配线断开的问题得以避免。结果，该实施方案具有改善电子部件10和电路板20之间接合点可靠性的效果。
如从图1A、1B、2A和2B明显可见，因电迁移造成的原子的迁移发生在从低电势侧(阴极)到高电势侧(阳极)的方向。因此，保护层可仅提供在低电势侧上的连接端子上，而不提供在高电势侧上的连接端子上。
此外，使连接端子12和22连接的焊料25不限于上文提及的Sn-3.5wt％Ag合金，而也可应用其他合金(焊料)，包括例如Sn-0.7wt％Cu合金、Sn-3wt％Ag-0.5wt％Cu合金。
然而，连接在连接端子12和22之间的焊料25优选由含有2.0wt％至4.0wt％范围内的Ag的SnAg合金制成。当上述SnAg合金被用作焊料时，该合金具有抑制保护层13和23中的AgSn合金扩散到焊料中的作用。由此，可归因于电迁移的连接端子12和22之间的配线断开可更可靠地得到抑制。
[试验1]
一些电子部件和电路板依照上述方法进行焊接，并然后考查每个电子部件和电路板的组合因电迁移造成的配线断开的时间。结果在下文描述。
在玻璃环氧衬底上形成一对铜图案，每个图案具有100微米的宽度和100微米的高度并且使所述图案的端表面彼此相对。然后，将每个铜图案的端表面镀以厚度为3微米的Ag，并进一步镀以厚度为0.5微米的Sn。此后，将玻璃环氧基底加热到250℃的温度，以使Ag和Sn相互扩散，由此形成含有Ag3Sn作为主组分的保护层。然后，通过使用Sn-3.5wt％Ag合金(焊料)，将保护层彼此接合来制备实施例的样品。
图5A为示意性描绘实施例的样品的图，其中附图标记31指代铜图案，附图标记32指代保护层(Ag3Sn)，并且附图标记33指代焊料(Sn-3.5wt％Ag)。
同时，如图5B中所描绘，制备除了不提供保护层32以外与实施例相类似的样品为对比实施例1。进一步，如图5C中所描绘，制备除了形成镀Ni层34(每层具有13微米至16微米的厚度)来代替保护层32以外与实施例相类似的样品作为对比实施例2。
为了实现焊料接合部分均匀的形状，形成抗蚀剂膜以防止焊料粘到铜图案31的端表面以外的部分。此外，对每一个实施例及对比实施例1和2均制备多个样品。
接下来，将实施例及实施例1和2的样品浸没在维持与160℃的油浴中，以减小因与电阻改变关联的焦耳加热而造成的温度变化。然后，在焊料与铜图案之间的接合界面处的电流密度等于2.5×104A/cm2的条件，从恒流稳压器施加直流电流到实施例及对比实施例1和2的样品。然后，针对每个样品测量因电迁移造成的配线断开的时间。
图6为描述实施例及对比实施例1和2的样品中造成配线断开的时间的考查结果的图。该图中，水平轴表示造成配线断开的时间(破坏寿命)垂直轴表示分布函数F。如从图6明显可见，实施例的样品的破坏寿命是对比实施例1的样品的破坏寿命的约三倍长，并且是对比实施例2的样品的破坏寿命的约六倍长。该实验的结果证明实施方案的有效性。
上述实验中，铜图案的端表面依次镀覆以Ag和Sn，并然后经受热处理以形成AgSn合金。然而，在其中铜图案的端表面直接镀覆以AgSn合金的情形中也得到类似的结果。
[实验2]
为考查保护层中Ag含量与因电迁移造成配线断开的时间之间的关系，进行了实验。结果在下文描述。
通过设定覆盖铜图案的端表面的保护层中不同的Ag含量，制备与上述实验1中实施例的样品(参见图5A)类似的样品。然后，与用于实验1中实施例的样品类似的程序，施加电流密度为2.5×104A/cm2的直流电流到每个样品。然后，针对每个样品测量造成配线断开的时间。
图7为描述的AgSn合金中Ag含量与造成配线断开的时间(破坏寿命)之间的关系的考查结果的图，其中水平轴指示AgSn合金中的Ag含量，而垂直轴指示时间。如从图7中明显可见，当Ag含量落在5wt％以下或超过95wt％时，破坏寿命小于等于500小时。该实验的结果证明，每个保护层中的Ag含量优选在从10wt％至95wt％(包含端值)的范围。
该实施方案中，已提供电子部件为半导体装置(LSI)和电路板的情况的描述。不用说，上文披露的技术也可适用于除半导体装置以外的电子部件，如芯片电阻器部件或电容器部件。此外，尽管已提供在实施方案中将半导体装置接合到电路板的情况的描述，该实施方案也可应用于将半导体装置焊接到彼此的情况。

Claims (8)

1.一种电子部件，包括要被焊接到不同电子部件的连接端子，其中所述连接端子的表面覆盖有由AgSn合金制成的保护层。
2.根据权利要求1所述的电子部件，其中所述AgSn合金为Ag3Sn。
3.根据权利要求1与2中任一项所述的电子部件，其中所述保护层中的Ag含量大于等于10wt％并且小于等于95wt％。
4.一种电子装置，包括：
电子部件；
电路板，所述电子部件安装在所述电路板上；以及
焊料，所述焊料将所述电子部件的连接端子接合到所述电路板的连接端子，其中
所述电子部件的所述连接端子与所述电路板的所述连接端子中的至少一个的表面覆盖有由AgSn合金制成的保护层。
5.根据权利要求4所述的电子装置，其中所述焊料为Ag与Sn的合金。
6.根据权利要求4与5中任一项所述的电子装置，其中所述AgSn合金为Ag3Sn。
7.根据权利要求4至6中任一项所述的电子装置，其中在所述电子部件的所述连接端子与所述电路板的所述连接端子之间流动的电流具有大于等于104A/cm2的电流密度。
8.根据权利要求4至7中任一项所述的电子装置，其中所述保护层仅提供在所述电子部件的所述连接端子与所述电路板的所述连接端子中低电势侧上的所述连接端子上。
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US20130164956A1 (en) 2013-06-27
US20150311171A1 (en) 2015-10-29
JP2013135014A (ja) 2013-07-08

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