CN103177952B - 低温高覆盖性侧墙制造方法 - Google Patents
低温高覆盖性侧墙制造方法 Download PDFInfo
- Publication number
- CN103177952B CN103177952B CN201110433694.4A CN201110433694A CN103177952B CN 103177952 B CN103177952 B CN 103177952B CN 201110433694 A CN201110433694 A CN 201110433694A CN 103177952 B CN103177952 B CN 103177952B
- Authority
- CN
- China
- Prior art keywords
- gas
- cavity
- frequency
- wafer
- radio frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 239000007789 gas Substances 0.000 claims abstract description 54
- 239000000463 material Substances 0.000 claims abstract description 29
- 238000006243 chemical reaction Methods 0.000 claims abstract description 20
- 239000010409 thin film Substances 0.000 claims abstract description 19
- 239000010408 film Substances 0.000 claims abstract description 14
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 12
- 239000012895 dilution Substances 0.000 claims abstract description 10
- 238000010790 dilution Methods 0.000 claims abstract description 10
- 230000001681 protective effect Effects 0.000 claims abstract description 10
- 230000009471 action Effects 0.000 claims abstract description 4
- 239000012495 reaction gas Substances 0.000 claims abstract 4
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 238000012544 monitoring process Methods 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 229910052756 noble gas Inorganic materials 0.000 claims description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 4
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- 150000004820 halides Chemical class 0.000 claims description 3
- 229910000077 silane Inorganic materials 0.000 claims description 3
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 2
- 238000001020 plasma etching Methods 0.000 claims description 2
- 239000000376 reactant Substances 0.000 claims description 2
- 150000002148 esters Chemical class 0.000 claims 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 5
- 238000004140 cleaning Methods 0.000 abstract description 2
- 238000002955 isolation Methods 0.000 abstract description 2
- 238000001312 dry etching Methods 0.000 abstract 1
- 230000000087 stabilizing effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 238000004062 sedimentation Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- IGELFKKMDLGCJO-UHFFFAOYSA-N xenon difluoride Chemical compound F[Xe]F IGELFKKMDLGCJO-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Formation Of Insulating Films (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110433694.4A CN103177952B (zh) | 2011-12-21 | 2011-12-21 | 低温高覆盖性侧墙制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110433694.4A CN103177952B (zh) | 2011-12-21 | 2011-12-21 | 低温高覆盖性侧墙制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103177952A CN103177952A (zh) | 2013-06-26 |
CN103177952B true CN103177952B (zh) | 2016-09-21 |
Family
ID=48637729
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201110433694.4A Active CN103177952B (zh) | 2011-12-21 | 2011-12-21 | 低温高覆盖性侧墙制造方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN103177952B (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10192751B2 (en) * | 2015-10-15 | 2019-01-29 | Lam Research Corporation | Systems and methods for ultrahigh selective nitride etch |
CN105957792A (zh) * | 2016-06-30 | 2016-09-21 | 上海华力微电子有限公司 | 半导体结构的刻蚀方法 |
CN108122834A (zh) * | 2017-12-13 | 2018-06-05 | 上海华虹宏力半导体制造有限公司 | 一种改善接触孔中钨缺失的方法 |
CN111850510A (zh) * | 2020-07-30 | 2020-10-30 | 上海理想万里晖薄膜设备有限公司 | 用于pecvd设备的原位清洗方法及对应的pecvd设备 |
WO2022073176A1 (en) * | 2020-10-09 | 2022-04-14 | Applied Materials, Inc. | Plasma-enhanced chemical vapor deposition processes for depositing passivation films on microelectronic structures |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5040046A (en) * | 1990-10-09 | 1991-08-13 | Micron Technology, Inc. | Process for forming highly conformal dielectric coatings in the manufacture of integrated circuits and product produced thereby |
US6449132B1 (en) * | 1999-10-05 | 2002-09-10 | Seagate Technology Llc | Dielectric gap material for magnetoresistive heads with conformal step coverage |
US6475916B1 (en) * | 2000-01-18 | 2002-11-05 | Chartered Semiconductor Manufacturing Ltd. | Method of patterning gate electrode with ultra-thin gate dielectric |
CN1609270A (zh) * | 2004-11-16 | 2005-04-27 | 福州大学 | PECVD沉积低应力SiN薄膜工艺 |
CN100343974C (zh) * | 2001-05-24 | 2007-10-17 | 国际商业机器公司 | 蚀刻期间保持浅沟槽隔离的结构和方法 |
-
2011
- 2011-12-21 CN CN201110433694.4A patent/CN103177952B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5040046A (en) * | 1990-10-09 | 1991-08-13 | Micron Technology, Inc. | Process for forming highly conformal dielectric coatings in the manufacture of integrated circuits and product produced thereby |
US6449132B1 (en) * | 1999-10-05 | 2002-09-10 | Seagate Technology Llc | Dielectric gap material for magnetoresistive heads with conformal step coverage |
US6475916B1 (en) * | 2000-01-18 | 2002-11-05 | Chartered Semiconductor Manufacturing Ltd. | Method of patterning gate electrode with ultra-thin gate dielectric |
CN100343974C (zh) * | 2001-05-24 | 2007-10-17 | 国际商业机器公司 | 蚀刻期间保持浅沟槽隔离的结构和方法 |
CN1609270A (zh) * | 2004-11-16 | 2005-04-27 | 福州大学 | PECVD沉积低应力SiN薄膜工艺 |
Also Published As
Publication number | Publication date |
---|---|
CN103177952A (zh) | 2013-06-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101600738B1 (ko) | 에칭 중에 로우-k 게이트 스페이서로의 손상을 감소시키기 위한 방법 | |
US7972968B2 (en) | High density plasma gapfill deposition-etch-deposition process etchant | |
KR101644732B1 (ko) | Finfet 방식용 게이트 스페이서 프로파일, 핀 손실 및 하드 마스크 손실 개선을 위한 종횡비 종속 성막 | |
JP6438302B2 (ja) | 低k及びその他の誘電体膜をエッチングするための処理チャンバ | |
CN102224585B (zh) | 可变更顶部轮廓的整合顺序 | |
CN103177952B (zh) | 低温高覆盖性侧墙制造方法 | |
CN109477212A (zh) | 用于填充间隙的方法和设备 | |
US8809194B2 (en) | Formation of SiOCl-containing layer on spacer sidewalls to prevent CD loss during spacer etch | |
CN106653675A (zh) | 浅沟槽隔离结构的形成方法 | |
KR102071723B1 (ko) | 저종횡비 패턴을 위한 측벽 이미지 전사 방법 | |
WO2012126268A1 (zh) | 一种薄膜填充方法 | |
TW202025212A (zh) | 低溫高品質的介電膜 | |
JP2022500867A (ja) | 誘電体材料の堆積方法 | |
CN104124195B (zh) | 沟槽隔离结构的形成方法 | |
CN106952947A (zh) | 鳍式场效应晶体管及其形成方法 | |
CN103930992B (zh) | 间层多晶硅电介质帽和形成该间层多晶硅电介质帽的方法 | |
CN114078683A (zh) | 蚀刻方法和等离子体处理装置 | |
CN103165416B (zh) | 用于刻蚀的硬掩膜及其制备方法以及mos器件的制造方法 | |
CN104795351B (zh) | 隔离结构的形成方法 | |
CN103903969A (zh) | 浮栅的制备方法 | |
CN103489821B (zh) | 一种高深宽比沟槽的填充方法 | |
CN109891596A (zh) | 制造用于N7/N5 FinFET和其他FinFET的气隙隔离物的方法 | |
CN104979204B (zh) | 鳍式场效应晶体管的形成方法 | |
CN102683272B (zh) | 一种用于45纳米及以下技术节点的金属前介质集成工艺 | |
CN103413778B (zh) | 隔离结构的形成方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20201214 Address after: 510000 601, building a, 136 Kaiyuan Avenue, Huangpu District, Guangzhou City, Guangdong Province Patentee after: AoXin integrated circuit technology (Guangdong) Co.,Ltd. Address before: 100029 No. 3 Beitucheng West Road, Chaoyang District, Beijing Patentee before: Institute of Microelectronics of the Chinese Academy of Sciences |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20220428 Address after: 510000 room 710, Jianshe building, No. 348, Kaifa Avenue, Huangpu District, Guangzhou, Guangdong Patentee after: Ruili flat core Microelectronics (Guangzhou) Co.,Ltd. Address before: 510000 601, building a, 136 Kaiyuan Avenue, Huangpu District, Guangzhou City, Guangdong Province Patentee before: AoXin integrated circuit technology (Guangdong) Co.,Ltd. |