CN103165481A - Bump manufacture technology and structure thereof - Google Patents
Bump manufacture technology and structure thereof Download PDFInfo
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- CN103165481A CN103165481A CN2011104239978A CN201110423997A CN103165481A CN 103165481 A CN103165481 A CN 103165481A CN 2011104239978 A CN2011104239978 A CN 2011104239978A CN 201110423997 A CN201110423997 A CN 201110423997A CN 103165481 A CN103165481 A CN 103165481A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
Abstract
The invention relates to a bump manufacture technology and a structure of the bump manufacture technology. The bump manufacture technology comprises that a silicon substrate which is provided with a plurality of welding pads is offered, a titanium containing metal layer which comprises a plurality of first areas and a plurality of second areas is prepared on the silicon substrate, a light resistance layer is prepared on the titanium containing metal layer, the light resistance layer is patterned to form a plurality of opening grooves, a plurality of bump bottom wrapping layers are prepared on the titanium containing metal layer, a plurality of copper bumps are prepared in the plurality of opening grooves, a heating step is conducted, a plurality of bump external wrapping layers are prepared, each of the plurality of bump external wrapping layers is enabled to be connected with each of the plurality of bump bottom wrapping layers to completely wrap each of the plurality of copper bumps to form a bump wrapping layer, a plurality of jointing layers are prepared on the plurality of bump external wrapping layers, the light resistance layer is removed, the plurality of second areas of the titanium containing metal layer are removed, and each of the plurality of first areas is enabled to form a metal layer under each of the plurality of bumps. The bump manufacture technology and the structure of the bump manufacture technology can avoid the occurrence of short circuit situation.
Description
Technical field
The present invention relates to a kind of bumping manufacturing process, particularly relate to a kind of bumping manufacturing process and structure thereof that prevents that copper ion is free.
Background technology
Because present electronic product is more and more compact, so the internal circuit layout is also more and more intensive, and so this kind circuit layout easily causes the situation of short circuit because adjacent electrical connecting element distance is too near.
Because the defective that above-mentioned existing projection cube structure exists, the inventor is based on being engaged in this type of product design manufacturing abundant practical experience and professional knowledge for many years, and the utilization of cooperation scientific principle, positive research and innovation in addition, to founding a kind of new bumping manufacturing process and structure thereof, can improve general existing projection cube structure, make it have more practicality.Through constantly research, design, and through after repeatedly studying sample and improvement, finally create the present invention who has practical value.
Summary of the invention
Main purpose of the present invention is to be, overcomes the shortcoming that existing projection cube structure exists, and a kind of bumping manufacturing process and structure thereof are provided, and technical problem to be solved is to avoid short circuit condition.
For achieving the above object and solving the problems of the technologies described above, a kind of bumping manufacturing process provided by the invention, it comprises provides a silicon substrate, this silicon substrate has a surface, a plurality of this surperficial weld pad and one that is arranged at is arranged at this surperficial protective layer, this protective layer has a plurality of openings, and above-mentioned opening appears above-mentioned weld pad; Form one and contain titanium coating in this silicon substrate, this contains titanium coating and covers above-mentioned weld pad, and this contains titanium coating and has a plurality of the firstth district and a plurality of Second Region that is positioned at above-mentioned first outside, district; Form a photoresist layer and contain titanium coating in this; This photoresist layer of patterning to be forming a plurality of flutings, above-mentioned fluting to above-mentioned the firstth district that should the titaniferous metal level and respectively this fluting have a madial wall; Form a plurality of projections bottoms coating layer in above-mentioned fluting, and respectively this projection bottom coating layer covers respectively this firstth district that this contains titanium coating, respectively this projection bottom coating layer has a lateral wall and this lateral wall and contacts with this madial wall of this fluting respectively; Form a plurality of copper bumps on the coating layer of this projection bottom, respectively this copper bump has one first end face, a ring wall and a bottom surface, and this bottom surface is positioned on the coating layer of this projection bottom, and respectively this ring wall contacts with this madial wall of this fluting respectively; Carry out a heating steps, so that respectively should slotting of this photoresist layer forms reaming, and make this madial wall of this fluting respectively and respectively be formed with one first spacing between this lateral wall of this projection bottom coating layer, and this madial wall of this fluting is respectively reached be formed with one second spacing between this ring wall of this copper bump respectively; Form the outside coating layer of a plurality of projections in above-mentioned the first spacing, above-mentioned the second spacing, respectively this first end face and this ring wall of this copper bump, so that respectively the outside coating layer of this projection connects respectively this projection bottom coating layer, and respectively the outside coating layer of this projection has one second end face; Form a plurality of knitting layers in above-mentioned second end face of the outside coating layer of above-mentioned projection; Remove this photoresist layer; And remove the above-mentioned Second Region that this contains titanium coating, and make this respectively this firstth district that contains titanium coating form a projection lower metal layer that is positioned under this projection integument respectively.
Better, above-mentioned bumping manufacturing process wherein should heat the glass transition temperature of manufacturing process between 70-140 ℃.
Better, above-mentioned bumping manufacturing process, wherein the material of above-mentioned knitting layer is gold.
Better, above-mentioned bumping manufacturing process, wherein the material of above-mentioned projection lower metal layer be selected from titanium/tungsten/gold, titanium/copper, titanium/tungsten/copper or titanium/nickel/vanadium/copper one of them.
Better, above-mentioned bumping manufacturing process, wherein the material of above-mentioned projection bottom coating layer and the outside coating layer of above-mentioned projection be selected from nickel, palladium or gold one of them.
Better, above-mentioned bumping manufacturing process, wherein coating layer is in the step of above-mentioned fluting bottom a plurality of projections of formation, and respectively bottom this projection, this madial wall of slotting respectively is somebody's turn to do in this lateral wall contact of coating layer.
Better, above-mentioned bumping manufacturing process, wherein in forming the step of a plurality of copper bumps on this projection bottom coating layer respectively, this madial wall that respectively this ring wall contact of this copper bump respectively should fluting.
The present invention also provides a kind of projection cube structure, comprises at least: a silicon substrate, and it has a surface, a plurality of this surperficial weld pad and one that is arranged at is arranged at this surperficial protective layer, and this protective layer has a plurality of openings, and above-mentioned opening appears above-mentioned weld pad; A plurality of projection lower metal layers, it is formed at above-mentioned weld pad; A plurality of copper bumps, it is formed at above above-mentioned projection lower metal layer, and respectively this copper bump has one first end face, a ring wall and a bottom surface; A plurality of projection integuments, it coats respectively this copper bump fully, respectively this projection integument includes the outside coating layer of projection that a projection bottom coating layer and connects this projection bottom coating layer, respectively bottom this projection, coating layer is formed at respectively this projection lower metal layer, respectively the outside coating layer of this projection is formed at respectively this first end face and this ring wall of this copper bump, and respectively this bottom surface of this copper bump is positioned at respectively this projection bottom coating layer, and respectively the outside coating layer of this projection has one second end face; And a plurality of knitting layers, it is formed at above-mentioned second end face of the outside coating layer of above-mentioned projection.
Better, above-mentioned projection cube structure, wherein the material of above-mentioned knitting layer is gold.
Better, above-mentioned projection cube structure, wherein the material of above-mentioned projection lower metal layer be selected from titanium/tungsten/gold, titanium/copper, titanium/tungsten/copper or titanium/nickel/vanadium/copper one of them.
Better, above-mentioned projection cube structure, wherein the material of above-mentioned projection bottom coating layer and the outside coating layer of above-mentioned projection be selected from nickel, palladium or gold one of them.
Beneficial effect of the present invention is: because this projection integument respectively includes respectively the outside coating layer of this projection and this projection bottom coating layer respectively; the copper ion that therefore can prevent above-mentioned copper bump is free and cause the situation of electrical short circuit; more can further dwindle the second spacing of adjacent copper bump; in addition; by the protection of above-mentioned projection integument, cause above-mentioned copper bump to produce the situation of depression in the time of also can preventing from removing the above-mentioned Second Region that this contains titanium coating.
In sum, the present invention has significant progress technically, and has obvious good effect, is really a new and innovative, progressive, practical new design.
Above-mentioned explanation is only the general introduction of technical solution of the present invention, for can clearer understanding technological means of the present invention, and can be implemented according to the content of specification, and for above and other purpose of the present invention, feature and advantage can be become apparent, below especially exemplified by preferred embodiment, and the cooperation accompanying drawing, be described in detail as follows.
Description of drawings
Fig. 1: according to a preferred embodiment of the present invention, a kind of flow chart of bumping manufacturing process.
Fig. 2 A to 2K: according to a preferred embodiment of the present invention, a kind of schematic cross-section of bumping manufacturing process.
[main element symbol description]
11 provide a silicon substrate, and this silicon substrate has a surface, a plurality of weld pad and a protective layer;
12 form one contains titanium coating in this silicon substrate, and this contains titanium coating and has a plurality of the firstth district and a plurality of Second Region
13 form a photoresist layer contains titanium coating in this
This photoresist layer of 14 patternings is forming a plurality of flutings, and respectively this fluting has a madial wall
Bottom 15 a plurality of projections of formation, coating layer is in above-mentioned fluting, and respectively bottom this projection, coating layer has a lateral wall
16 form a plurality of copper bumps in this projection bottom coating layer respectively, and respectively this copper bump has one first end face, a ring wall and a bottom surface, and respectively this ring wall contacts with this madial wall of this fluting respectively
17 carry out a heating steps, make respectively this fluting of this photoresist layer form reaming, and make this madial wall of this fluting respectively and respectively be formed with one first spacing between this lateral wall of this projection bottom coating layer, and this madial wall of this fluting is respectively reached between this ring wall of this copper bump respectively be formed with one second spacing
18 form the outside coating layers of a plurality of projections in above-mentioned the first spacing, above-mentioned the second spacing, respectively this first end face and this ring wall of this copper bump, so that respectively the outside coating layer of this projection connects this projection bottom coating layer, and respectively the outside coating layer of this projection has one second end face
19 form a plurality of knitting layers in above-mentioned second end face of the outside coating layer of above-mentioned projection
20 remove this photoresist layer
21 remove the above-mentioned Second Region that this contains titanium coating, and make this respectively this firstth district that contains titanium coating form a projection lower metal layer
100 projection cube structures
110 silicon substrate 111 surfaces
112 weld pad 113 protective layers
The 113a opening
120 copper bump 121 first end faces
122 ring wall 123 bottom surfaces
The 131a lateral wall
The outside coating layer 132a of 132 projections the second end face
140 knitting layer 150 projection lower metal layers
200 contain titanium coating
210 first district's 220 Second Regions
300 photoresist layers
310 fluting 311 madial walls
D1 the first space D 2 second spacings
Embodiment
Reach for further setting forth the present invention technological means and the effect that predetermined goal of the invention is taked, below in conjunction with accompanying drawing and preferred embodiment, to the bumping manufacturing process of foundation the present invention proposition and embodiment, structure, step, feature and the effect thereof of structure thereof, be described in detail as follows.
See also Fig. 1 and Fig. 2 A to 2K, it is a preferred embodiment of the present invention, a kind of bumping manufacturing process comprises the following step: at first, see also step 11 and Fig. 2 A of Fig. 1, one silicon substrate 110 is provided, this silicon substrate 110 has the protective layer 113 that a surface 111, a plurality of weld pads 112 and that are arranged at this surface 111 are arranged at this surface 111, and this protective layer 113 has a plurality of opening 113a, and above-mentioned opening 113a appears above-mentioned weld pad 112; Then, see also step 12 and Fig. 2 B of Fig. 1, form one and contain titanium coating 200 in this silicon substrate 110, this contains titanium coating 200 and covers above-mentioned weld pads 112, and this contains titanium coating 200 and has a plurality of the first districts 210 and a plurality of Second Region 220 that is positioned at 210 outsides, above-mentioned the firstth district; Afterwards, see also step 13 and Fig. 2 C of Fig. 1, form a photoresist layer 300 and contain titanium coating 200 in this; Then, see also step 14 and Fig. 2 D of Fig. 1, this photoresist layer 300 of patterning to be forming a plurality of flutings 310, above-mentioned the first district 210 that 310 pairs of above-mentioned flutings should titaniferous metal level 200 and respectively this fluting 310 have a madial wall 311; Afterwards, see also step 15 and Fig. 2 E of Fig. 1, form a plurality of projections bottoms coating layer 131 in above-mentioned fluting 310, and respectively this projection bottom coating layer 131 covers this and contains respectively this firstth district 210 of titanium coating 200, respectively this projection bottom coating layer 131 has a lateral wall 131a and this lateral wall 131a and contacts with this madial wall 311 of this fluting 310 respectively, in the present embodiment, the material of above-mentioned projection bottom coating layer 131 be selected from nickel, palladium or gold one of them, the thickness of above-mentioned projection bottom coating layer 131 is not more than 8um.
then, see also step 16 and Fig. 2 F of Fig. 1, form a plurality of copper bumps 120 on coating layer 131 bottom above-mentioned projection, respectively this copper bump 120 has one first end face 131, a ring wall 122 and a bottom surface 123, this bottom surface 123 is positioned on the coating layer 131 of this projection bottom, and respectively this ring wall 122 contacts with this madial wall 311 of this fluting 310 respectively, afterwards, see also step 17 and Fig. 2 G of Fig. 1, carry out a heating steps, so that the 310 formation reamings of respectively should slotting of this photoresist layer 300, and make this madial wall 311 of this fluting 310 respectively and respectively be formed with one first space D 1 between this lateral wall 131a of this projection bottom coating layer 131, and make this madial wall 311 of this fluting 310 respectively and respectively be formed with one second space D 2 between this ring wall 122 of this copper bump 120, in the present embodiment, the glass transition temperature of this heating manufacturing process is between 70-140 ℃, then, see also step 18 and Fig. 2 H of Fig. 1, form the outside coating layer 132 of a plurality of projections in above-mentioned the first space D 1, above-mentioned the second space D 2, respectively this first end face 121 and this ring wall 122 of this copper bump 120, so that respectively the outside coating layer 132 of this projection connects respectively this projection bottom coating layer 131, the outside coating layer 132 of this projection reaches the respectively projection integument 130 of this copper bump 120 of respectively these projection bottom coating layer 131 formation one coatings and make respectively, respectively this projection integument 130 coats respectively this copper bump 120 fully, and respectively the outside coating layer 132 of this projection has one second end face 132a, the material of the outside coating layer 132 of above-mentioned projection is selected from nickel, palladium or the gold one of them, the thickness of the outside coating layer 132 of above-mentioned projection is not more than 2um, afterwards, see also step 19 and Fig. 2 I of Fig. 1, form a plurality of knitting layers 140 in the above-mentioned second end face 132a of the outside coating layer 132 of above-mentioned projection, in the present embodiment, the material of above-mentioned knitting layer 140 is gold.
Then, see also step 20 and Fig. 2 J of Fig. 1, remove this photoresist layer 300 to manifest the outside coating layer 132 of above-mentioned projection and above-mentioned knitting layer 140; At last, see also step 21 and Fig. 2 K of Fig. 1, remove the above-mentioned Second Region 220 that this contains titanium coating 200, and make this respectively this firstth district 210 that contains titanium coating 200 form one to be positioned at projection lower metal layer 150 under this projection integument 130 respectively forming a projection cube structure 100, the material of above-mentioned projection lower metal layer 150 be selected from titanium/tungsten/gold, titanium/copper, titanium/tungsten/copper or titanium/nickel (vanadium)/copper one of them.
please consult again Fig. 2 K, it is a kind of projection cube structure 100 of a preferred embodiment of the present invention, it includes a silicon substrate 110 at least, a plurality of projection lower metal layers 150, a plurality of copper bumps 120, a plurality of projection integuments 130 and a plurality of knitting layer 140, this silicon substrate 110 has a surface 111, a plurality of weld pads 112 and that are arranged at this surface 111 are arranged at the protective layer 113 on this surface 111, this protective layer 113 has a plurality of opening 113a, and above-mentioned opening 113a appears above-mentioned weld pad 112, above-mentioned projection lower metal layer 150 is formed at above-mentioned weld pad 112, the material of above-mentioned projection lower metal layer 150 is selected from titanium/tungsten/gold, titanium/copper, titanium/tungsten/copper or titanium/nickel (vanadium)/copper one of them, above-mentioned copper bump 120 is formed at above-mentioned projection lower metal layer 150 tops, respectively this copper bump 120 has one first end face 121, one ring wall 122 and a bottom surface 123, above-mentioned projection integument 130 coats respectively this copper bump 120 fully, respectively this projection integument 130 includes the outside coating layer 132 of projection that a projection bottom coating layer 131 and connects this projection bottom coating layer 131, respectively the outside coating layer 132 of this projection is formed at respectively this first end face 121 and this ring wall 122 of this copper bump 120, and respectively the outside coating layer 132 of this projection has one second end face 132a, respectively bottom this projection, coating layer 131 is formed at respectively this projection lower metal layer 150, and respectively this bottom surface 123 of this copper bump 120 is positioned at respectively this projection bottom coating layer 131, in the present embodiment, the material of above-mentioned projection bottom coating layer 131 and the outside coating layer 132 of above-mentioned projection is selected from nickel, palladium or the gold one of them, the thickness of above-mentioned projection bottom coating layer 131 is not more than 8um, the thickness of the outside coating layer 132 of above-mentioned projection is not more than 2um, above-mentioned knitting layer 140 is formed at the above-mentioned second end face 132a of the outside coating layer 132 of above-mentioned projection, in the present embodiment, the material of above-mentioned knitting layer 140 is gold.Because this projection integument 130 respectively includes respectively the outside coating layer 132 of this projection and this projection bottom coating layer 131 respectively; the copper ion that therefore can prevent above-mentioned copper bump 120 is free and cause the situation of electrical short circuit; more can further dwindle the spacing of adjacent copper bump 120; in addition; by the protection of above-mentioned projection integument 130, cause above-mentioned copper bump 120 to produce the situation of depression in the time of also can preventing from removing the above-mentioned Second Region 220 that this contains titanium coating 200.
the above, it is only preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, although the present invention discloses as above with preferred embodiment, yet be not to limit the present invention, any those skilled in the art are not within breaking away from the technical solution of the present invention scope, when the technology contents that can utilize above-mentioned announcement is made a little change or is modified to the equivalent embodiment of equivalent variations, in every case be the content that does not break away from technical solution of the present invention, any simple modification that foundation technical spirit of the present invention is done above embodiment, equivalent variations and modification, all still belong in the scope of technical solution of the present invention.
Claims (11)
1. bumping manufacturing process is characterized in that comprising at least:
One silicon substrate is provided, and this silicon substrate has a surface, a plurality of this surperficial weld pad and one that is arranged at is arranged at this surperficial protective layer, and this protective layer has a plurality of openings, and above-mentioned opening appears above-mentioned weld pad;
Form one and contain titanium coating in this silicon substrate, this contains titanium coating and covers above-mentioned weld pad, and this contains titanium coating and has a plurality of the firstth district and a plurality of Second Region that is positioned at above-mentioned first outside, district;
Form a photoresist layer and contain titanium coating in this;
This photoresist layer of patterning to be forming a plurality of flutings, above-mentioned fluting to above-mentioned the firstth district that should the titaniferous metal level and respectively this fluting have a madial wall;
Form a plurality of projections bottoms coating layer in above-mentioned fluting, and respectively this projection bottom coating layer covers respectively this firstth district that this contains titanium coating, respectively this projection bottom coating layer has a lateral wall;
Form a plurality of copper bumps on this projection bottom coating layer respectively, respectively this copper bump has one first end face, a ring wall and a bottom surface, and this bottom surface is positioned on the coating layer of this projection bottom;
Carry out a heating steps, so that respectively should slotting of this photoresist layer forms reaming, and make this madial wall of this fluting respectively and respectively be formed with one first spacing between this lateral wall of this projection bottom coating layer, and this madial wall of this fluting is respectively reached be formed with one second spacing between this ring wall of this copper bump respectively;
Form the outside coating layer of a plurality of projections in above-mentioned the first spacing, above-mentioned the second spacing, respectively this first end face and this ring wall of this copper bump, so that respectively the outside coating layer of this projection connects respectively this projection bottom coating layer, the outside coating layer of this projection reaches the respectively projection integument of this copper bump of respectively this projection bottom coating layer formation one coating and make respectively, respectively this projection integument coats respectively this copper bump fully, and respectively the outside coating layer of this projection has one second end face;
Form a plurality of knitting layers in above-mentioned second end face of the outside coating layer of above-mentioned projection;
Remove this photoresist layer; And
Remove the above-mentioned Second Region that this contains titanium coating, and make this respectively this firstth district that contains titanium coating form a projection lower metal layer that is positioned under this projection integument respectively.
2. bumping manufacturing process as claimed in claim 1 is characterized in that the glass transition temperature of this heating manufacturing process wherein is between 70-140 ℃.
3. bumping manufacturing process as claimed in claim 1, is characterized in that wherein the material of above-mentioned knitting layer is gold.
4. bumping manufacturing process as claimed in claim 1, it is characterized in that wherein the material of above-mentioned projection lower metal layer be selected from titanium/tungsten/gold, titanium/copper, titanium/tungsten/copper or titanium/nickel/vanadium/copper one of them.
5. bumping manufacturing process as claimed in claim 1, it is characterized in that wherein the material of above-mentioned projection bottom coating layer and the outside coating layer of above-mentioned projection be selected from nickel, palladium or gold one of them.
6. bumping manufacturing process as claimed in claim 1, is characterized in that wherein coating layer is in the step of above-mentioned fluting bottom a plurality of projections of formation, and respectively bottom this projection, this madial wall of slotting respectively is somebody's turn to do in this lateral wall contact of coating layer.
7. bumping manufacturing process as claimed in claim 1 is characterized in that wherein in forming the step of a plurality of copper bumps on this projection bottom coating layer respectively, this madial wall that respectively this ring wall contact of this copper bump respectively should fluting.
8. projection cube structure is characterized in that comprising at least:
One silicon substrate, it has a surface, a plurality of this surperficial weld pad and one that is arranged at is arranged at this surperficial protective layer, and this protective layer has a plurality of openings, and above-mentioned opening appears above-mentioned weld pad;
A plurality of projection lower metal layers, it is formed at above-mentioned weld pad;
A plurality of copper bumps, it is formed at above above-mentioned projection lower metal layer, and respectively this copper bump has one first end face, a ring wall and a bottom surface;
A plurality of projection integuments, it coats respectively this copper bump fully, respectively this projection integument includes the outside coating layer of projection that a projection bottom coating layer and connects this projection bottom coating layer, respectively bottom this projection, coating layer is formed at respectively this projection lower metal layer, respectively the outside coating layer of this projection is formed at respectively this first end face and this ring wall of this copper bump, and respectively this bottom surface of this copper bump is positioned at respectively this projection bottom coating layer, and respectively the outside coating layer of this projection has one second end face; And
A plurality of knitting layers, it is formed at above-mentioned second end face of the outside coating layer of above-mentioned projection.
9. projection cube structure as claimed in claim 8, is characterized in that wherein the material of above-mentioned knitting layer is gold.
10. projection cube structure as claimed in claim 8, it is characterized in that wherein the material of above-mentioned projection lower metal layer be selected from titanium/tungsten/gold, titanium/copper, titanium/tungsten/copper or titanium/nickel/vanadium/copper one of them.
11. projection cube structure as claimed in claim 8, it is characterized in that wherein the material of above-mentioned projection bottom coating layer and the outside coating layer of above-mentioned projection be selected from nickel, palladium or gold one of them.
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| CN115188678A (en) * | 2022-06-24 | 2022-10-14 | 弘大芯源(深圳)半导体有限公司 | Method for manufacturing microwave integrated circuit conductive interconnection |
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