CN102867758A - Lug manufacturing process and structure thereof - Google Patents
Lug manufacturing process and structure thereof Download PDFInfo
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- CN102867758A CN102867758A CN2011101946483A CN201110194648A CN102867758A CN 102867758 A CN102867758 A CN 102867758A CN 2011101946483 A CN2011101946483 A CN 2011101946483A CN 201110194648 A CN201110194648 A CN 201110194648A CN 102867758 A CN102867758 A CN 102867758A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
Abstract
The invention relates to a lug manufacturing process and a structure thereof. The manufacturing process comprises the following steps of: providing a substrate; forming a copper-containing metal layer on the substrate, wherein the copper-containing metal layer is provided with a first region and a second region; forming a photoresist layer on the copper-containing metal layer; patterning the photoresist layer; forming copper lugs, wherein each copper lug is provided with a first top surface; forming a leading layer on the first top surface, wherein the leading surface is provided with a second top surface; removing the photoresist layer; removing the second region, and forming a lower lug metal layer in the first region, wherein each lower lug metal layer is provided with a first periphery wall, each copper lug is provided with a second periphery wall, and the leading layer is provided with a third periphery wall; forming an anti-freeness layer, wherein the anti-freeness layer is provided with a first covering section covered on the substrate, a second covering section covered on the first peripheral wall, the second peripheral wall and the third peripheral wall, a third covering section, and a removing section covered on the second top surface; forming a dielectric layer on the anti-freeness layer; patterning the dielectric layer; and removing the removing section to expose the second top surface.
Description
Technical field
The present invention relates to a kind of bumping manufacturing process, particularly relate to a kind of bumping manufacturing process that prevents that copper ion is free.
Background technology
Such as Figure 1A to 1H, existing known bumping manufacturing process is to comprise at least the following step: at first, see also Figure 1A, one substrate 10 is provided, this substrate 10 is to have the protective layer 13 that a surface 11, a plurality of weld pads 12 and that are arranged at this surface 11 are formed at this surface 11, and this protective layer 13 is to appear above-mentioned weld pad 12; Then, see also Figure 1B, form a copper-containing metal layer 20 in above-mentioned weld pad 12 and this protective layer 13; Afterwards, see also Fig. 1 C, form a photoresist layer 30 in this copper-containing metal layer 20; Then, see also Fig. 1 D, this photoresist layer 30 of patterning is to form a plurality of openings 31; Afterwards, see also Fig. 1 E, form a plurality of copper bumps 40 in above-mentioned opening 31, respectively this copper bump 40 is to have one first periphery wall 41; Then, see also Fig. 1 F, form a conductive layer 50 in above-mentioned copper bump 40; Afterwards, see also Fig. 1 G, remove this photoresist layer 30, at last, see also Fig. 1 H, this copper-containing metal layer 20 of utilizing engraving method to remove not to be covered by above-mentioned copper bump 40 is to form a projection lower metal layer 21, respectively this projection lower metal layer 21 is to have one second periphery wall 21a, so when removing not by the step of this copper-containing metal layer 20 of above-mentioned copper bump 40 coverings, because the material of above-mentioned copper bump 40 is to include copper, therefore above-mentioned copper bump 40 is can be simultaneously etched and cause above-mentioned first periphery wall 41 of above-mentioned copper bump 40 to produce the situation of depression with this copper-containing metal layer 20, and the degree of the above-mentioned second periphery wall 21a of above-mentioned projection lower metal layer 21 depression is more greater than above-mentioned first periphery wall 41 of above-mentioned copper bump 40, in addition, because above-mentioned the first periphery wall 41 and above-mentioned the second periphery wall 21a depression and exposed, therefore easily cause the free phenomenon of copper ion and cause the situation of short circuit to occur.
Because the defective that above-mentioned existing bumping manufacturing process exists, the inventor is based on being engaged in for many years abundant practical experience and professional knowledge of this type of product design manufacturing, and the utilization of cooperation scientific principle, positive research and innovation in addition, to founding a kind of new bumping manufacturing process and structure thereof, can improve general existing bumping manufacturing process, make it have more practicality.Through constantly research, design, and through after repeatedly studying sample and improvement, finally create the present invention who has practical value.
Summary of the invention
Main purpose of the present invention is to be, overcomes the shortcoming that existing bumping manufacturing process exists, and a kind of bumping manufacturing process and structure thereof are provided, and technical problem to be solved is to avoid the free situation that causes short circuit of copper ion.
For achieving the above object and solve the problems of the technologies described above, a kind of bumping manufacturing process provided by the invention, it comprises at least, and a substrate, this substrate are provided is to have surface and a plurality of this surperficial weld pads that are arranged at, respectively this weld pad is to have one to appear face and a ring wall; Form a copper-containing metal layer in this substrate and cover above-mentioned weld pad, this copper-containing metal layer is to have a plurality of the first districts and a plurality of Second Region; Form a photoresist layer in this copper-containing metal layer; This photoresist layer of patterning is to form a plurality of openings, and above-mentioned opening is corresponding above-mentioned the first district; Form a plurality of copper bumps in above-mentioned opening, respectively this copper bump be cover respectively this first district of this copper-containing metal layer and respectively this copper bump be to have one first end face; Form a conductive layer in above-mentioned first end face of above-mentioned copper bump, this conductive layer is to have one second end face and this conductive layer is to include a nickel dam and a knitting layer, and this nickel dam is between this copper bump and this knitting layer; Remove this photoresist layer; Remove the above-mentioned Second Region of this copper-containing metal layer, and make respectively this first district of this copper-containing metal layer form a projection lower metal layer, wherein respectively this projection lower metal layer is to have one first periphery wall, respectively this copper bump is to have one second periphery wall, this conductive layer is to have one the 3rd periphery wall, being to have one first spacing between the 3rd periphery wall and this second periphery wall, is to have one second spacing between the 3rd periphery wall and this first periphery wall; Form an anti-ionized layers in this second end face of this conductive layer, above-mentioned first periphery wall of above-mentioned projection lower metal layer, above-mentioned second periphery wall of above-mentioned copper bump, the 3rd periphery wall of this conductive layer and this substrate, should anti-ionized layers be to have one first overlay segment, one second overlay segment, one the 3rd overlay segment and the section of removing, this first overlay segment is to cover this substrate, this second overlay segment is above-mentioned the first periphery wall that covers above-mentioned projection lower metal layer, above-mentioned second periphery wall of above-mentioned copper bump and the 3rd periphery wall of this conductive layer, the 3rd overlay segment and this section of removing are this second end faces that covers this conductive layer; Form a dielectric layer in this anti-ionized layers; This dielectric layer of patterning is to form a plurality of openings that appear, and the above-mentioned opening that appears is this section of removing that appears this anti-ionized layers; And this section of removing that removes this anti-ionized layers is to appear this second end face of this conductive layer.
Better, above-mentioned bumping manufacturing process wherein includes the step of the 3rd overlay segment that removes this anti-ionized layers in addition.
Better, above-mentioned bumping manufacturing process, wherein this substrate is to have in addition a protective layer, this protective layer is to be formed at this surface and to cover above-mentioned weld pad.
Better, above-mentioned bumping manufacturing process, wherein this first overlay segment is this protective layer that covers this substrate.
Better, above-mentioned bumping manufacturing process, wherein this first overlay segment is to cover this ring wall of this weld pad and this surface of this substrate.
Better, above-mentioned bumping manufacturing process, wherein this second spacing is to be not less than this first spacing.
Better, above-mentioned bumping manufacturing process, wherein should anti-ionized layers be selected from oxide or nitride one of them.
Better, above-mentioned bumping manufacturing process, wherein this nitride be can be silicon nitride, silicon oxynitride or its mixture one of them, this oxide be can be silicon dioxide, silicon oxynitride or its mixture one of them.
Better, above-mentioned bumping manufacturing process, wherein the material of this dielectric layer is to be selected from polyimides (PI, Polyimides) or benzocyclobutene (BCB, Benzocyclobutane).
The present invention also provides a kind of projection cube structure, comprises at least: a substrate, and it is to have surface and a plurality of this surperficial weld pads that are arranged at, respectively this weld pad is to have one to appear face and a ring wall; A plurality of projection lower metal layers, it is to be formed on the above-mentioned weld pad, respectively this projection lower metal layer is to have one first periphery wall; A plurality of copper bumps, it is to be formed on the above-mentioned projection lower metal layer, respectively this copper bump is to have one first end face and one second periphery wall; One conductive layer, it is above-mentioned the first end face that is formed at above-mentioned copper bump, this conductive layer is to have one second end face and one the 3rd periphery wall, and this conductive layer is to include a nickel dam and a knitting layer, this nickel dam is between this copper bump and this knitting layer, wherein being to have one first spacing between the 3rd periphery wall and this second periphery wall, is to have one second spacing between the 3rd periphery wall and this first periphery wall; One anti-ionized layers, it is to be formed at above-mentioned second periphery wall of above-mentioned first periphery wall of above-mentioned projection lower metal layer, above-mentioned copper bump, the 3rd periphery wall and this substrate of this conductive layer, should anti-ionized layers be to have one first overlay segment and one second overlay segment, this first overlay segment is to cover this substrate, and this second overlay segment is above-mentioned the first periphery wall, above-mentioned second periphery wall of above-mentioned copper bump and the 3rd periphery wall of this conductive layer that covers above-mentioned projection lower metal layer; And a dielectric layer, it is to be formed at this anti-ionized layers, and this dielectric layer is to have a plurality of openings that appear to appear this second end face of this conductive layer.
Better, above-mentioned projection cube structure should anti-ionized layers be to have in addition one the 3rd overlay segment wherein, and the 3rd overlay segment is this second end face that covers this conductive layer.
Better, above-mentioned projection cube structure, wherein the 3rd periphery wall is to have one the 3rd outer perimeter, this second periphery wall is to have one second outer perimeter, this first periphery wall is to have one first outer perimeter, the 3rd outer perimeter is greater than this second outer perimeter, and this second outer perimeter is to be not less than this first outer perimeter.
Better, above-mentioned projection cube structure, wherein this substrate is to have in addition a protective layer, this protective layer is to be formed at this surface and to cover above-mentioned weld pad.
Better, above-mentioned projection cube structure, wherein this first overlay segment is to cover this ring wall of this weld pad and this surface of this substrate.
Better, above-mentioned projection cube structure, wherein the first overlay segment is this protective layer that covers this substrate.
Beneficial effect of the present invention is: owing to should anti-ionized layers be this second end face that covers this conductive layer, above-mentioned first periphery wall of above-mentioned projection lower metal layer, above-mentioned second periphery wall of above-mentioned copper bump, the 3rd periphery wall of this conductive layer and this substrate, it is to avoid above-mentioned second periphery wall of above-mentioned first periphery wall of above-mentioned projection lower metal layer and above-mentioned copper bump exposed and cause the free situation that causes short circuit of copper ion, in addition, because this dielectric layer covers again this ionized layers, therefore not need too thick and this dielectric layer be can increase the structural strength after the encapsulation and reduce the consumption of filling glue to the thickness of this ionized layers, more can effectively block aqueous vapor.
In sum, the present invention has significant progress technically, and has obvious good effect, really is a new and innovative, progressive, practical new design.
Above-mentioned explanation only is the general introduction of technical solution of the present invention, for can clearer understanding technological means of the present invention, and can be implemented according to the content of specification, and for above and other purpose of the present invention, feature and advantage can be become apparent, below especially exemplified by preferred embodiment, and the cooperation accompanying drawing, be described in detail as follows.
Description of drawings
Figure 1A to 1H: the schematic cross-section of existing known bumping manufacturing process.
Fig. 2 A to 2L: according to a preferred embodiment of the present invention, a kind of schematic cross-section of bumping manufacturing process.
Fig. 3: according to another preferred embodiment of the present invention, the schematic cross-section of another kind of projection cube structure.
Fig. 4: according to another preferred embodiment of the present invention, the schematic cross-section of another projection cube structure.
[main element symbol description]
Embodiment
Reach technological means and the effect that predetermined goal of the invention is taked for further setting forth the present invention, below in conjunction with accompanying drawing and preferred embodiment, to the bumping manufacturing process of foundation the present invention proposition and embodiment, structure, step, feature and the effect thereof of structure thereof, be described in detail as follows.
See also Fig. 2 A to Fig. 2 L, it is a preferred embodiment of the present invention, a kind of bumping manufacturing process, it comprises the following step at least: at first, see also Fig. 2 A, one substrate 110 is provided, and this substrate 110 is to have surface 111 and an a plurality of weld pad 112 that is arranged at this surface 111, and respectively this weld pad 112 is to have one to appear face 112a and a ring wall 112b; Then, see also Fig. 2 B, form a copper-containing metal layer 120 in this substrate 110 and cover above-mentioned weld pad 112, in the present embodiment, this copper-containing metal layer 120 is this surface 111 and the above-mentioned weld pads 112 that cover this substrate 110, and this copper-containing metal layer 120 is to have a plurality of the first districts 121 and a plurality of Second Region 122; Then, see also Fig. 2 C, form a photoresist layer 130 in this copper-containing metal layer 120; Then, see also this photoresist layer 130 of Fig. 2 D patterning to form a plurality of openings 131, above-mentioned opening 131 is corresponding above-mentioned first districts 121; Afterwards, see also Fig. 2 E, form a plurality of copper bumps 140 in above-mentioned opening 131, respectively this copper bump 140 be cover respectively this first district 121 of this copper-containing metal layer 120 and respectively this copper bump 140 be to have one first end face 141; Then, see also Fig. 2 F, form a conductive layer 150 in above-mentioned first end face 141 of above-mentioned copper bump 140, this conductive layer 150 is to have one second end face 151 and this conductive layer 150 is to include a nickel dam 152 and a knitting layer 153, and this nickel dam 152 is between this copper bump 140 and this knitting layer 153; Afterwards, see also Fig. 2 G, remove this photoresist layer 130.
Then, see also Fig. 2 H, remove the above-mentioned Second Region 122 of this copper-containing metal layer 120, and make respectively this first district 121 of this copper-containing metal layer 120 form a projection lower metal layer 123, wherein respectively this projection lower metal layer 123 is to have one first periphery wall 123a, respectively this copper bump 140 is to have one second periphery wall 142, this conductive layer 150 is to have one the 3rd periphery wall 154, to have one first space D 1 between the 3rd periphery wall 154 and this second periphery wall 142, to have one second space D 2 between the 3rd periphery wall 154 and this first periphery wall 123a, in the present embodiment, this second space D 2 is to be not less than this first space D 1, this first periphery wall 123a has one first outer perimeter L1, this second periphery wall 142 is to have one second outer perimeter L2, the 3rd periphery wall 154 is that to have one the 3rd outer perimeter L, 3, the three outer perimeter L3 be greater than this second outer perimeter L2, and this second outer perimeter L2 is not less than this first outer perimeter L1; Afterwards, see also Fig. 2 I, form an anti-ionized layers 160 in this second end face 151 of this conductive layer 150, the above-mentioned first periphery wall 123a of above-mentioned projection lower metal layer 123, above-mentioned second periphery wall 142 of above-mentioned copper bump 140, the 3rd periphery wall 154 and this substrate 110 of this conductive layer 150, in the present embodiment, should anti-ionized layers 160 be this surface 111 and the above-mentioned weld pads 112 that cover this substrate 110, should anti-ionized layers 160 be to have one first overlay segment 161, one second overlay segment 162, one the 3rd overlay segment 163 and a section of removing 164, this first overlay segment 161 is to cover this substrate 110, this second overlay segment 162 is the above-mentioned first periphery wall 123a that cover above-mentioned projection lower metal layer 123, above-mentioned second periphery wall 142 of above-mentioned copper bump 140 and the 3rd periphery wall 154 of this conductive layer 150, the 3rd overlay segment 163 and this section of removing 164 are these second end faces 151 that cover this conductive layer 150, in the present embodiment, this first overlay segment 161 is to cover this ring wall 112b of this weld pad 112 and this surface 111 of this substrate 110, should anti-ionized layers 160 be selected from oxide or nitride one of them, this nitride is to can be silicon nitride, silicon oxynitride or its mixture one of them, this oxide is to can be silicon dioxide, silicon oxynitride or its mixture one of them.
Then, see also Fig. 2 J, form a dielectric layer 170 in this anti-ionized layers 160, the material of this dielectric layer 170 is to can be selected from polyimides (PI, Polyimides) or benzocyclobutene (BCB, Benzocyclobutane); Afterwards, see also Fig. 2 K, this dielectric layer 170 of patterning is to form a plurality of openings 171 that appear, and the above-mentioned opening 171 that appears is these sections of removing 164 that appear this anti-ionized layers 160; At last, see also Fig. 2 L, remove this section of removing 164 of this anti-ionized layers 160 to appear this second end face 151 of this conductive layer 150, to form a kind of projection cube structure 100, this projection cube structure 100 is to comprise at least a substrate 110, a plurality of projection lower metal layers 123, a plurality of copper bumps 140, one conductive layer 150, one anti-ionized layers 160 and a dielectric layer 170, this substrate 110 is to have surface 111 and an a plurality of weld pad 112 that is arranged at this surface 111, respectively this weld pad 112 is to have one to appear face 112a and a ring wall 112b, above-mentioned projection lower metal layer 123 is to be formed on the above-mentioned weld pad 112, respectively this projection lower metal layer 123 is to have one first periphery wall 123a, above-mentioned copper bump 140 is to be formed on the above-mentioned projection lower metal layer 123, respectively this copper bump 140 is to have one first end face 141 and one second periphery wall 142, this conductive layer 150 is above-mentioned first end faces 141 that are formed at above-mentioned copper bump 140, this conductive layer 150 is to have one second end face 151 and one the 3rd periphery wall 154, and this conductive layer 150 is to include a nickel dam 152 and a knitting layer 153, this nickel dam 152 is between this copper bump 140 and this knitting layer 153, in the present embodiment, the 3rd periphery wall 154 is to have one the 3rd outer perimeter L3, this second periphery wall 142 is to have one second outer perimeter L2, this first periphery wall 123a has one first outer perimeter L1, the 3rd outer perimeter L3 is greater than this second outer perimeter L2, this second outer perimeter L2 is not less than this first outer perimeter L1, to have one first space D 1 between the 3rd periphery wall 154 and this second periphery wall 142 wherein, to have one second space D 2 between the 3rd periphery wall 154 and this first periphery wall 123a, should anti-ionized layers 160 be the above-mentioned first periphery wall 123a that are formed at above-mentioned projection lower metal layer 123, above-mentioned second periphery wall 142 of above-mentioned copper bump 140, the 3rd periphery wall 154 and this substrate 110 of this conductive layer 150, should anti-ionized layers 160 be to have one first overlay segment 161, one second overlay segment 162 and one the 3rd overlay segment 163, this first overlay segment 161 is to cover this substrate 110, this second overlay segment 162 is the above-mentioned first periphery wall 123a that cover above-mentioned projection lower metal layer 123, above-mentioned second periphery wall 142 of above-mentioned copper bump 140 and the 3rd periphery wall 154 of this conductive layer 150, the 3rd overlay segment 163 is these second end faces 151 that cover this conductive layer 150, this dielectric layer 170 is to be formed at this anti-ionized layers 160, and this dielectric layer 170 is to have a plurality of openings 171 that appear to appear this second end face 151 of this conductive layer 150.Because this projection cube structure 100 is to have this anti-ionized layers 160, above-mentioned the second periphery wall 142 that can avoid the above-mentioned first periphery wall 123a of above-mentioned projection lower metal layer 123 and above-mentioned copper bump 140 is exposed and cause the free situation that causes short circuit of copper ion, in addition, because this projection cube structure 100 is to have more this dielectric layer 170, therefore not need too thick and this dielectric layer 170 be can increase the structural strength after the encapsulation and reduce the consumption of filling glue to the thickness of this ionized layers, more can effectively block aqueous vapor.
Perhaps, see also Fig. 3, it is to be the second embodiment of the present invention, and the difference of itself and the first embodiment is to remove in the step of this section of removing 164 of this anti-ionized layers 160 and also removes simultaneously the 3rd overlay segment 163 of this anti-ionized layers 160 to appear more this second end face 151.
Perhaps; see also Fig. 4; it is to be the third embodiment of the present invention; the difference of itself and the first embodiment is that this substrate 110 is to have in addition a protective layer 113; this protective layer 113 is to be formed at this surface 111 and to cover above-mentioned weld pad 112; therefore should anti-ionized layers 160 be these second end faces 151 that cover this conductive layer 150; the above-mentioned first periphery wall 123a of above-mentioned projection lower metal layer 123; above-mentioned second periphery wall 142 of above-mentioned copper bump 140; the 3rd periphery wall 154 and this protective layer 113 of this conductive layer 150; in the present embodiment; this first overlay segment 161 that should prevent ionized layers 160 is these protective layers 113 that cover this substrate 110; this second overlay segment 162 is the above-mentioned first periphery wall 123a that cover above-mentioned projection lower metal layer 123; the 3rd periphery wall 154, the three overlay segments 163 of above-mentioned second periphery wall 142 of above-mentioned copper bump 140 and this conductive layer 150 are these second end faces 151 that cover this conductive layer 150.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, although the present invention discloses as above with preferred embodiment, yet be not to limit the present invention, any those skilled in the art are not within breaking away from the technical solution of the present invention scope, when the technology contents that can utilize above-mentioned announcement is made a little change or is modified to the equivalent embodiment of equivalent variations, in every case be the content that does not break away from technical solution of the present invention, any simple modification that foundation technical spirit of the present invention is done above embodiment, equivalent variations and modification all still belong in the scope of technical solution of the present invention.
Claims (15)
1. bumping manufacturing process is characterized in that comprising at least:
One substrate is provided, and this substrate is to have surface and a plurality of this surperficial weld pads that are arranged at, and respectively this weld pad is to have one to appear face and a ring wall;
Form a copper-containing metal layer in this substrate and cover above-mentioned weld pad, this copper-containing metal layer is to have a plurality of the first districts and a plurality of Second Region;
Form a photoresist layer in this copper-containing metal layer;
This photoresist layer of patterning is to form a plurality of openings, and above-mentioned opening is corresponding above-mentioned the first district;
Form a plurality of copper bumps in above-mentioned opening, respectively this copper bump be cover respectively this first district of this copper-containing metal layer and respectively this copper bump be to have one first end face;
Form a conductive layer in above-mentioned first end face of above-mentioned copper bump, this conductive layer is to have one second end face and this conductive layer is to include a nickel dam and a knitting layer, and this nickel dam is between this copper bump and this knitting layer;
Remove this photoresist layer;
Remove the above-mentioned Second Region of this copper-containing metal layer, and make respectively this first district of this copper-containing metal layer form a projection lower metal layer, wherein respectively this projection lower metal layer is to have one first periphery wall, respectively this copper bump is to have one second periphery wall, this conductive layer is to have one the 3rd periphery wall, being to have one first spacing between the 3rd periphery wall and this second periphery wall, is to have one second spacing between the 3rd periphery wall and this first periphery wall;
Form an anti-ionized layers in this second end face of this conductive layer, above-mentioned first periphery wall of above-mentioned projection lower metal layer, above-mentioned second periphery wall of above-mentioned copper bump, the 3rd periphery wall of this conductive layer and this substrate, should anti-ionized layers be to have one first overlay segment, one second overlay segment, one the 3rd overlay segment and the section of removing, this first overlay segment is to cover this substrate, this second overlay segment is above-mentioned the first periphery wall that covers above-mentioned projection lower metal layer, above-mentioned second periphery wall of above-mentioned copper bump and the 3rd periphery wall of this conductive layer, the 3rd overlay segment and this section of removing are this second end faces that covers this conductive layer;
Form a dielectric layer in this anti-ionized layers;
This dielectric layer of patterning is to form a plurality of openings that appear, and the above-mentioned opening that appears is this section of removing that appears this anti-ionized layers; And
Remove this section of removing of this anti-ionized layers to appear this second end face of this conductive layer.
2. bumping manufacturing process as claimed in claim 1 is characterized in that including in addition the step of the 3rd overlay segment that removes this anti-ionized layers.
3. bumping manufacturing process as claimed in claim 1 is characterized in that wherein this substrate is to have in addition a protective layer, and this protective layer is to be formed at this surface and to cover above-mentioned weld pad.
4. bumping manufacturing process as claimed in claim 3 is characterized in that wherein this first overlay segment is this protective layer that covers this substrate.
5. bumping manufacturing process as claimed in claim 1 is characterized in that wherein this first overlay segment is to cover this ring wall of this weld pad and this surface of this substrate.
6. bumping manufacturing process as claimed in claim 1 is characterized in that wherein this second spacing is to be not less than this first spacing.
7. bumping manufacturing process as claimed in claim 1, it is characterized in that wherein should anti-ionized layers be selected from oxide or nitride one of them.
8. bumping manufacturing process as claimed in claim 7, it is characterized in that wherein this nitride be can be silicon nitride, silicon oxynitride or its mixture one of them, this oxide be can be silicon dioxide, silicon oxynitride or its mixture one of them.
9. bumping manufacturing process as claimed in claim 1 is characterized in that wherein the material of this dielectric layer is to be selected from polyimides PI or benzocyclobutene BCB.
10. projection cube structure is characterized in that comprising at least:
One substrate, it is to have surface and a plurality of this surperficial weld pads that are arranged at, respectively this weld pad is to have one to appear face and a ring wall;
A plurality of projection lower metal layers, it is to be formed on the above-mentioned weld pad, respectively this projection lower metal layer is to have one first periphery wall;
A plurality of copper bumps, it is to be formed on the above-mentioned projection lower metal layer, respectively this copper bump is to have one first end face and one second periphery wall;
One conductive layer, it is above-mentioned the first end face that is formed at above-mentioned copper bump, this conductive layer is to have one second end face and one the 3rd periphery wall, and this conductive layer is to include a nickel dam and a knitting layer, this nickel dam is between this copper bump and this knitting layer, wherein being to have one first spacing between the 3rd periphery wall and this second periphery wall, is to have one second spacing between the 3rd periphery wall and this first periphery wall;
One anti-ionized layers, it is to be formed at above-mentioned second periphery wall of above-mentioned first periphery wall of above-mentioned projection lower metal layer, above-mentioned copper bump, the 3rd periphery wall and this substrate of this conductive layer, should anti-ionized layers be to have one first overlay segment and one second overlay segment, this first overlay segment is to cover this substrate, and this second overlay segment is above-mentioned the first periphery wall, above-mentioned second periphery wall of above-mentioned copper bump and the 3rd periphery wall of this conductive layer that covers above-mentioned projection lower metal layer; And
One dielectric layer, it is to be formed at this anti-ionized layers, and this dielectric layer is to have a plurality of openings that appear to appear this second end face of this conductive layer.
11. projection cube structure as claimed in claim 10 is characterized in that should anti-ionized layers being to have in addition one the 3rd overlay segment wherein, the 3rd overlay segment is this second end face that covers this conductive layer.
12. projection cube structure as claimed in claim 10, it is characterized in that wherein the 3rd periphery wall is to have one the 3rd outer perimeter, this second periphery wall is to have one second outer perimeter, this first periphery wall is to have one first outer perimeter, the 3rd outer perimeter is greater than this second outer perimeter, and this second outer perimeter is to be not less than this first outer perimeter.
13. projection cube structure as claimed in claim 10 is characterized in that wherein this substrate is to have in addition a protective layer, this protective layer is to be formed at this surface and to cover above-mentioned weld pad.
14. projection cube structure as claimed in claim 10 is characterized in that wherein this first overlay segment is to cover this ring wall of this weld pad and this surface of this substrate.
15. projection cube structure as claimed in claim 13 is characterized in that wherein this first overlay segment is this protective layer that covers this substrate.
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| CN201110194648.3A CN102867758B (en) | 2011-07-08 | 2011-07-08 | Bumping manufacturing process and structure thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105448755A (en) * | 2016-01-15 | 2016-03-30 | 中芯长电半导体（江阴）有限公司 | A packaging method for copper column salient points and a packaging structure |
| CN108028229A (en) * | 2015-09-14 | 2018-05-11 | 美光科技公司 | The lantern ring and associated system and method for Underbump metallization structure |
| CN111128755A (en) * | 2019-12-30 | 2020-05-08 | 颀中科技（苏州）有限公司 | Packaging structure and forming method thereof |
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