CN202651096U - Fine pitch projection structure - Google Patents
Fine pitch projection structure Download PDFInfo
- Publication number
- CN202651096U CN202651096U CN 201220058795 CN201220058795U CN202651096U CN 202651096 U CN202651096 U CN 202651096U CN 201220058795 CN201220058795 CN 201220058795 CN 201220058795 U CN201220058795 U CN 201220058795U CN 202651096 U CN202651096 U CN 202651096U
- Authority
- CN
- China
- Prior art keywords
- projection
- those
- lower metal
- covering section
- copper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The utility model discloses a fine pitch projection structure comprising at least a silicon substrate, a plurality of projection lower metal layers, a plurality of the copper projections, a plurality of projection protective layers and a plurality of wettable layers. The silicon substrate has a plurality of weld pads. The projection lower metal layers are formed on the weld pads. Each of the projection lower metal layers has a projection bearing part and an extension part. The copper projections are formed on the projection lower metal layers, and each copper projection is provided with a first top surface and a first ring wall. The projection protective layers are formed on extension parts and the first top surface and the first ring wall of each copper projection. Each of the projection protective layers is provided with a projection cover part and a metal layer cover part. Each projection cover part covers the first top surface and the first ring wall of each copper projection, and the projection cover part is provided with a second top surface. Each metal layer cover part covers each extension part. The wettable layers are formed on second top surfaces of projection cover parts.
Description
Technical field
The utility model relates to a kind of projection cube structure, particularly relates to a kind of minuteness space projection structure.
Background technology
In the minuteness space projection structure, because the copper ion of copper bump can produce dissociation, if therefore the spacing of adjacent copper bump is too near, cause easily the situation of short circuit to occur.
This shows that above-mentioned existing minuteness space projection structure obviously still has inconvenience and defective, and demands urgently further being improved in structure and use.In order to solve the problem of above-mentioned existence, relevant manufacturer there's no one who doesn't or isn't seeks solution painstakingly, finished by development but have no for a long time applicable design always, and common product does not have appropriate structure to address the above problem, this obviously is the problem that the anxious wish of relevant dealer solves.The minuteness space projection structure of therefore how to found a kind of new structure, real one of the current important research and development problem that belongs to, also becoming the current industry utmost point needs improved target.
Summary of the invention
The purpose of this utility model is; overcome the defective that existing minuteness space projection structure exists; and provide a kind of minuteness space projection structure of new structure; technical problem to be solved is the phenomenon that it is dissociated with copper ion in the reduction copper bump by the protection of projection protective layer; and then the reliability of raising minuteness space projection structure, be very suitable for practicality.
The purpose of this utility model and to solve its technical problem be to adopt following technical scheme to realize.According to a kind of minuteness space projection structure that the utility model proposes; it comprises at least: a silicon substrate; a plurality of projection lower metal layers; a plurality of copper bumps; a plurality of projection protective layers and a plurality of wettable layer; this silicon substrate has a surface; a plurality of these surperficial weld pads and one that are arranged at are arranged at this surperficial protective layer; this protective layer has a plurality of openings; and those openings appear those weld pads; those projection lower metal layers are formed on those weld pads; respectively this projection lower metal layer has a projection supporting part and an extension; those copper bumps are formed on those projection lower metal layers; and respectively this copper bump has one first end face and a ring wall; respectively this projection supporting part of this projection lower metal layer is positioned at respectively under this copper bump; respectively this extension of this projection lower metal layer protrudes from respectively this ring wall of this copper bump; those projection protective layers are formed at those extensions of those projection lower metal layers; respectively on this first end face and this ring wall of this copper bump; respectively this projection protective layer has a projection covering section and a metal level covering section; respectively this projection covering section coats respectively this first end face and this ring wall of this copper bump; and this projection covering section has one second end face; respectively this metal level covering section covers respectively this extension, and those wettable layers are formed on those second end faces of those projection covering sections.
The purpose of this utility model and solve its technical problem and can also be further achieved by the following technical measures.
Aforesaid minuteness space projection structure, wherein respectively this projection covering section has one first lateral wall, and respectively this metal level covering section has one second lateral wall, and this metal level covering section protrudes from this first lateral wall of this projection covering section.
Aforesaid minuteness space projection structure, wherein respectively this extension of this projection lower metal layer has one the 3rd lateral wall, and the 3rd lateral wall is concordant with this second lateral wall.
Aforesaid minuteness space projection structure, wherein the material of those projection protective layers be selected from nickel, palladium or gold one of them.
Aforesaid minuteness space projection structure, wherein the material of those projection lower metal layers be selected from titanium/tungsten/gold, titanium/copper or titanium/tungsten/copper one of them.
The utility model compared with prior art has obvious advantage and beneficial effect.By technique scheme; the utility model minuteness space projection structure has following advantages and beneficial effect at least: the utility model by the protection of those projection protective layers to reduce the free phenomenon of copper ion in those copper bumps; and then improve the reliability of minuteness space projection structure, and cause those copper bumps to produce the situation of depression also can prevent from removing those second sections that this contains titanium coating the time.
In sum, the utility model has significant progress technically, and has obvious good effect, really is a new and innovative, progressive, practical new design.
Above-mentioned explanation only is the general introduction of technical solutions of the utility model, for can clearer understanding technological means of the present utility model, and can be implemented according to the content of specification, and for above and other purpose of the present utility model, feature and advantage can be become apparent, below especially exemplified by preferred embodiment, and the cooperation accompanying drawing, be described in detail as follows.
Description of drawings
Fig. 1 is the flow chart according to a kind of minuteness space projection manufacture method of a preferred embodiment of the present utility model.
Fig. 2 A, Fig. 2 B, Fig. 2 C, Fig. 2 D, Fig. 2 E, Fig. 2 F-1, Fig. 2 G, Fig. 2 H-1, Fig. 2 I, Fig. 2 J and Fig. 2 K-1 are the schematic cross-sections according to a kind of minuteness space projection manufacture method of a preferred embodiment of the present utility model.
Fig. 2 F-2, Fig. 2 H-2 and Fig. 2 K-2 are respectively the partial enlarged drawings of Fig. 2 F-1, Fig. 2 H-1 and Fig. 2 K-1.
11: a silicon substrate is provided
12: form one and contain titanium coating in this silicon substrate, this contains titanium coating and has a plurality of the first sections and a plurality of the second section
13: form a photoresist layer and contain titanium coating in this
14: this photoresist layer of patterning to be forming a plurality of flutings, and those flutings are to those first sections that should the titaniferous metal level
15: form a plurality of copper bumps and slot in those, respectively this copper bump has one first end face and a ring wall
16: carry out a heating steps, enlarging respectively this fluting of this photoresist layer, and this photoresist layer is subjected to a plurality of bodies of thermosetting and a plurality of removable section
17: this photoresist layer is carried out an etching step
18: form a plurality of projection protective layers and contain titanium coating, respectively this first end face and this ring wall of this copper bump in this
19: form a plurality of wettable layers
20: remove this photoresist layer
21: remove those second sections that this contains titanium coating, so that this respectively this first section that contains titanium coating forms a projection lower metal layer that is positioned under this copper bump respectively
100: the minuteness space projection structure
110: silicon substrate
111: the surface
112: weld pad
113: protective layer
113a: opening
120: copper bump
121: the first end faces
122: ring wall
130: the projection protective layer
131: projection covering section
131a: the second end face
131b: the first lateral wall
132: metal level covering section
132a: the second lateral wall
140: wettable layer
150: the projection lower metal layer
151: the projection supporting part
152: extension
152a: the 3rd lateral wall
200: contain titanium coating
210: the first sections
220: the second sections
300: photoresist layer
310: fluting
320: body
330: removable section
Embodiment
Be to reach technological means and the effect that predetermined goal of the invention is taked for further setting forth the utility model, below in conjunction with accompanying drawing and preferred embodiment, to according to its embodiment of minuteness space projection structure, structure, feature and the effect thereof that the utility model proposes, be described in detail as follows.
Relevant aforementioned and other technology contents of the present utility model, Characteristic can clearly present in the following detailed description that cooperates with reference to graphic preferred embodiment.Explanation by embodiment, should be to reach technological means and the effect that predetermined purpose takes to obtain one more deeply and concrete understanding to the utility model, yet appended graphic only provide with reference to the usefulness of explanation, the utility model is limited.
See also shown in Fig. 1 and Fig. 2 A, Fig. 2 B, Fig. 2 C, Fig. 2 D, Fig. 2 E, Fig. 2 F-1, Fig. 2 G, Fig. 2 H-1, Fig. 2 I, Fig. 2 J, Fig. 2 K-1, Fig. 2 F-2, Fig. 2 H-2, Fig. 2 K-2 and Fig. 2 K-2, Fig. 1 is the flow chart according to a kind of minuteness space projection manufacture method of a preferred embodiment of the present utility model.Fig. 2 A, Fig. 2 B, Fig. 2 C, Fig. 2 D, Fig. 2 E, Fig. 2 F-1, Fig. 2 G, Fig. 2 H-1, Fig. 2 I, Fig. 2 J and Fig. 2 K-1 are the schematic cross-sections according to a kind of minuteness space projection manufacture method of a preferred embodiment of the present utility model.Fig. 2 F-2, Fig. 2 H-2 and Fig. 2 K-2 are respectively the partial enlarged drawings of Fig. 2 F-1, Fig. 2 H-1 and Fig. 2 K-1.A kind of minuteness space projection manufacture method of a preferred embodiment of the present utility model comprises the following step: at first, see also step 11 and Fig. 2 A of Fig. 1, one silicon substrate 110 is provided, this silicon substrate 110 has the protective layer 113 that a surface 111, a plurality of weld pads 112 and that are arranged at this surface 111 are arranged at this surface 111, this protective layer 113 has a plurality of opening 113a, and those openings 113a appears those weld pads 112; Then, see also step 12 and Fig. 2 B of Fig. 1, form one and contain titanium coating 200 in this silicon substrate 110, this contains titanium coating 200 and covers this protective layer 113 and those weld pads 112, and this contains titanium coating 200 and has a plurality of the first sections 210 and a plurality of the second section 220 that is positioned at those the first section 210 outsides; Afterwards, see also step 13 and Fig. 2 C of Fig. 1, form a photoresist layer 300 and contain titanium coating 200 in this; Then, see also step 14 and Fig. 2 D of Fig. 1, this photoresist layer 300 of patterning to be forming a plurality of flutings 310, those first sections 210 that 310 pairs of those flutings should titaniferous metal level 200; Afterwards, see also step 15 and Fig. 2 E of Fig. 1, form a plurality of copper bumps 120 in those flutings 310, respectively this copper bump 120 has one first end face 121 and a ring wall 122.
Then, see also step 16, Fig. 2 F-1 and Fig. 2 F-2 of Fig. 1, carry out a heating steps, to enlarge respectively this fluting 310 of this photoresist layer 300, and this photoresist layer 300 is to be subjected to a plurality of bodies 320 of thermosetting and a plurality of removable 330, in the present embodiment, the glass transition temperature of this heating steps is between 70～140 ℃; Afterwards, see also step 17 and Fig. 2 G of Fig. 1; This photoresist layer 300 is carried out an etching step, and to remove those removable 330 and manifest this and contain titanium coating 200, in the present embodiment, employed method is the plasma dry etching method in this etching step; Then; see also step 18, Fig. 2 H-1 and Fig. 2 H-2 of Fig. 1; form a plurality of projection protective layers 130 and contain titanium coating 200, respectively this first end face 121 and this ring wall 122 of this copper bump 120 in this; in the present embodiment; respectively this projection protective layer 130 has a projection covering section 131 and a metal level covering section 132; this projection covering section 131 coats this first end face 121 of this copper bump 120 respectively and this ring wall 122 and this projection covering section 131 and has one second end face 131a, the material of those projection protective layers 130 can be selected from nickel, palladium or gold one of them.
Afterwards, see also step 19 and Fig. 2 I of Fig. 1, form a plurality of wettable layer 140 in those second end faces 131a of those projection covering sections 131; Then, see also step 20 and Fig. 2 J of Fig. 1, remove those bodies 320 of this photoresist layer 300 to manifest those wettable layer 140 and those projection protective layers 130; At last; see also the step 21 of Fig. 1; Fig. 2 K-1 and Fig. 2 K-2; remove those second sections 220 that this contains titanium coating 200; so that forming one, this respectively this first section 210 that contains titanium coating 200 is positioned at projection lower metal layer 150 under this copper bump 120 respectively to form a minuteness space projection structure 100; and respectively this projection lower metal layer 150 has a projection supporting part 151 and that is positioned under this copper bump 120 respectively and protrudes from the respectively extension 152 of this ring wall 122 of this copper bump 120; and this extension 152 of this projection lower metal layer 150 covers this protective layer 113; respectively this metal level covering section 132 of this projection protective layer 130 covers respectively this extension 152 of this projection lower metal layer 150, and the material of those projection lower metal layers 150 is selected from titanium/tungsten/gold; titanium/copper or titanium/tungsten/copper one of them.In addition, in the present embodiment, this projection covering section 131 has one first lateral wall 131b, this metal level covering section 132 has this first lateral wall 131b that one second lateral wall 132a and this metal level covering section 132 protrude from this projection covering section 131, and respectively this extension 152 of this projection lower metal layer 150 has one the 3rd lateral wall 152a, and the 3rd lateral wall 152a is concordant with this second lateral wall 132a.Because those copper bumps 120 are coated by those projection protective layers 130; therefore can reduce the free phenomenon of copper ion in those copper bumps 120; to improve the reliability of this minuteness space projection structure 100; and by the protection of those projection protective layers 130, cause those copper bumps 120 to produce the situation of depression in the time of also can preventing from removing those second sections 220 that this contains titanium coating 200.
Please consult again Fig. 2 K-1 and Fig. 2 K-2; a kind of minuteness space projection structure 100 of a preferred embodiment of the present utility model; it includes a silicon substrate 110 at least; a plurality of projection lower metal layers 150; a plurality of copper bumps 120; a plurality of projection protective layers 130 and a plurality of wettable layer 140; this silicon substrate 110 has a surface 111; a plurality of weld pads 112 and that are arranged at this surface 111 are arranged at the protective layer 113 on this surface 111; this protective layer 113 has a plurality of opening 113a; and those openings 113a appears those weld pads 112; those projection lower metal layers 150 are formed on those weld pads 112; respectively this projection lower metal layer 150 has a projection supporting part 151 and an extension 152; the material of those projection lower metal layers 150 is selected from titanium/tungsten/gold; titanium/copper or titanium/tungsten/copper one of them; those copper bumps 120 are formed on those projection lower metal layers 150; and respectively this copper bump 120 has one first end face 121 and a ring wall 122; respectively this projection supporting part 151 of this projection lower metal layer 150 is positioned at respectively this copper bump 120 times; respectively this extension 152 of this projection lower metal layer 150 protrudes from respectively this ring wall 122 of this copper bump 120; those projection protective layers 130 are formed at those extensions 152 of those projection lower metal layers 150; respectively on this first end face 121 and this ring wall 122 of this copper bump 120; respectively this projection protective layer 130 has a projection covering section 131 and a metal level covering section 132; respectively this projection covering section 131 coats respectively this first end face 121 and this ring wall 122 of this copper bump 120; and this projection covering section 131 has one second end face 131a; respectively this metal level covering section 132 covers respectively this extension 152 of this projection lower metal layer 150; the material of those projection protective layers 130 is selected from nickel; palladium or gold one of them, those wettable layers 140 are formed on those second end faces 131a of those projection covering sections 131.In the present embodiment, this projection covering section 131 has one first lateral wall 131b, this metal level covering section 132 has one second lateral wall 132a, and this metal level covering section 132 protrudes from this first lateral wall 131b of this projection covering section 131, and respectively this extension 152 of this projection lower metal layer 150 has one the 3rd lateral wall 152a, and the 3rd lateral wall 152a is concordant with this second lateral wall 132a.
The above, it only is preferred embodiment of the present utility model, be not that the utility model is done any pro forma restriction, although the utility model discloses as above with preferred embodiment, yet be not to limit the utility model, any those skilled in the art are not within breaking away from the technical solutions of the utility model scope, when the technology contents that can utilize above-mentioned announcement is made a little change or is modified to the equivalent embodiment of equivalent variations, in every case be the content that does not break away from technical solutions of the utility model, any simple modification that foundation technical spirit of the present utility model is done above embodiment, equivalent variations and modification all still belong in the scope of technical solutions of the utility model.
Claims (3)
1. minuteness space projection structure is characterized in that it comprises:
One silicon substrate, it has a surface, a plurality of this surperficial weld pad and one that is arranged at is arranged at this surperficial protective layer, and this protective layer has a plurality of openings, and those openings appear those weld pads;
A plurality of projection lower metal layers, it is formed on those weld pads, and respectively this projection lower metal layer has a projection supporting part and an extension;
A plurality of copper bumps, it is formed on those projection lower metal layers, and respectively this copper bump has one first end face and a ring wall, and respectively this projection supporting part of this projection lower metal layer is positioned at respectively under this copper bump, and respectively this extension of this projection lower metal layer protrudes from respectively this ring wall of this copper bump;
A plurality of projection protective layers, it is formed at those extensions of those projection lower metal layers, respectively on this first end face and this ring wall of this copper bump, respectively this projection protective layer has a projection covering section and a metal level covering section, respectively this projection covering section coats respectively this first end face and this ring wall of this copper bump, and this projection covering section has one second end face, and respectively this metal level covering section covers respectively this extension; And
A plurality of wettable layers, it is formed on those second end faces of those projection covering sections.
2. minuteness space projection structure according to claim 1, it is characterized in that wherein respectively this projection covering section has one first lateral wall, respectively this metal level covering section has one second lateral wall, and this metal level covering section protrudes from this first lateral wall of this projection covering section.
3. minuteness space projection structure according to claim 2 is characterized in that wherein respectively this extension of this projection lower metal layer has one the 3rd lateral wall, and the 3rd lateral wall is concordant with this second lateral wall.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220058795 CN202651096U (en) | 2012-02-22 | 2012-02-22 | Fine pitch projection structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220058795 CN202651096U (en) | 2012-02-22 | 2012-02-22 | Fine pitch projection structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202651096U true CN202651096U (en) | 2013-01-02 |
Family
ID=47420158
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220058795 Expired - Lifetime CN202651096U (en) | 2012-02-22 | 2012-02-22 | Fine pitch projection structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202651096U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020199608A1 (en) * | 2019-03-29 | 2020-10-08 | 颀中科技（苏州）有限公司 | Bump manufacturing method for semiconductor packaging |
-
2012
- 2012-02-22 CN CN 201220058795 patent/CN202651096U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020199608A1 (en) * | 2019-03-29 | 2020-10-08 | 颀中科技（苏州）有限公司 | Bump manufacturing method for semiconductor packaging |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103165481B (en) | Bump manufacture technology and structure thereof | |
| CN102386104B (en) | Quadrilateral flat pin-free encapsulation method | |
| CN106654004B (en) | Resistance-type memory and its manufacturing method | |
| JP2013544445A5 (en) | ||
| CN105489593A (en) | Electromagnetic shield packaging assembly and manufacturing method therefor | |
| CN102386105B (en) | Four limit flat non-connection pin method for packing and the structure made thereof | |
| CN202651096U (en) | Fine pitch projection structure | |
| CN103855100A (en) | Seal Ring Structure with Metal-Insulator-Metal Capacitor | |
| CN202651097U (en) | Fine pitch projection structure | |
| CN103165482B (en) | Bump technology | |
| US20130249089A1 (en) | Method for manufacturing fine-pitch bumps and structure thereof | |
| CN104465728B (en) | The grid structure and process of separate gate power device | |
| CN102867758B (en) | Bumping manufacturing process and structure thereof | |
| CN102983100B (en) | Semiconductor device and its manufacture method | |
| CN105988647B (en) | A kind of less capacitance touch screen manufacturing method of processing procedure | |
| CN103050418A (en) | Pad manufacturing method and pad | |
| CN202384329U (en) | Lug structure | |
| CN202796457U (en) | Multi-electrode type single-layer ceramic capacitor | |
| CN103137544B (en) | The manufacture method of metal fuse in a kind of semiconductor chip structure and chip | |
| CN104810404A (en) | Fine polycrystalline silicon silicide composite gate structure and preparing method thereof | |
| CN101635284B (en) | Wafer packaging structure | |
| CN210516490U (en) | Platform type ceramic chip mechanism | |
| CN202758871U (en) | Semiconductor structure and packaging construction | |
| CN102800599A (en) | Projection process and structure thereof | |
| TWM477673U (en) | Solar cell with improved backside structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130102 |