US20130249089A1 - Method for manufacturing fine-pitch bumps and structure thereof - Google Patents
Method for manufacturing fine-pitch bumps and structure thereof Download PDFInfo
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- US20130249089A1 US20130249089A1 US13/893,623 US201313893623A US2013249089A1 US 20130249089 A1 US20130249089 A1 US 20130249089A1 US 201313893623 A US201313893623 A US 201313893623A US 2013249089 A1 US2013249089 A1 US 2013249089A1
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Abstract
A method for manufacturing fine-pitch bumps comprises the steps of providing a silicon substrate; forming a titanium-containing metal layer on the silicon substrate, wherein the titanium-containing metal layer comprises a plurality of first zones and a plurality of second zones; forming a photoresist layer on the titanium-containing metal layer; patterning the photoresist layer to form a plurality of opening slots; forming a plurality of copper bumps at the opening slots, wherein each of the copper bumps comprises a first top surface and a ring surface; heating the photoresist layer to form a plurality of body portions and a plurality of removable portions; etching the photoresist layer; and removing the second zones to enable each of the first zones to form an under bump metallurgy layer having a bearing portion and an extending portion.
Description
- The present invention is generally related to a method for manufacturing fine-pitch bumps, which particularly relates to the method for manufacturing fine-pitch bumps that prevents copper ions from dissociation.
- In structure of fine-pitch bumps, a short phenomenon is easily occurred from a relatively short gap between two adjacent copper bumps owing to the copper ion dissociated by the copper bump.
- The primary object of the present invention is to provide a method for manufacturing fine-pitch bumps comprising the following steps of providing a silicon substrate having a surface, a plurality of bond pads disposed at the surface and a protective layer disposed at the surface, wherein the protective layer comprises a plurality of openings, and the bond pads are revealed by the openings; forming a titanium-containing metal layer on the silicon substrate, the titanium-containing metal layer comprises a plurality of first zones and a plurality of second zones located outside the first zones, the protective layer and the bond pads are covered with the titanium-containing metal layer; forming a photoresist layer on the titanium-containing metal layer; patterning the photoresist layer to form a plurality of opening slots corresponded to the first zones of the titanium-containing metal layer; forming a plurality of copper bumps at the opening slots, each of the copper bumps comprises a first top surface and a ring surface; heating the photoresist layer to ream the opening slots of the photoresist layer, and the heat process enables the photoresist layer to form a plurality of body portions and a plurality of removable portions; etching the photoresist layer to remove the removable portions and expose the titanium-containing metal layer; forming a plurality of bump protection layers on the titanium-containing metal layer, the first top surface and the ring surface of each of the copper bumps, wherein each of the bump protection layers comprises a metallic coverage portion and a bump coverage portion having a second top surface, the first top surface and the ring surface of each of the copper bumps are covered with the bump coverage portion; forming a plurality of wettable layers on the second top surfaces; removing the body portions of the photoresist layer; eventually, removing the second zones of the titanium-containing metal layer to enable each of the first zones of the titanium-containing metal layer to form an under bump metallurgy layer located under each of the copper bumps, each of the under bump metallurgy layers comprises a bearing portion located under each of the copper bumps and an extending portion protruded to the ring surface of each of the copper bumps, and the extending portion of each of the under bump metallurgy layers is covered with the metallic coverage portion of each of the bump protection layers. The protection of the bump protection layers may lower dissociation of copper ions released from the copper bumps, which improves reliability of the fine-pitch bump structure effectively. Besides, the protection also prevents the copper bumps from collapsing when removing the second zones of the titanium-containing metal layer.
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FIG. 1 is a flow illustrating a method for manufacturing fine-pitch bumps in accordance with a preferred embodiment of the present invention. -
FIGS. 2A to 2K are sectional schematic diagrams illustrating a method for manufacturing fine-pitch bumps in accordance with a preferred embodiment of the present invention. - With reference to
FIGS. 1 and 2A to 2K, a method for manufacturing fine-pitch bumps in accordance with a preferred embodiment of the present invention comprises the following steps of: first, with reference tostep 11 ofFIG. 1 andFIG. 2A , providing asilicon substrate 110 having asurface 111, a plurality ofbond pads 112 disposed at thesurface 111 and aprotective layer 113 disposed at thesurface 111, wherein theprotective layer 113 comprises a plurality ofopenings 113 a, and thebond pads 112 are revealed by theopenings 113 a; next, referring tostep 12 ofFIG. 1 andFIG. 2B , forming a titanium-containingmetal layer 200 on thesilicon substrate 110, the titanium-containingmetal layer 200 comprises a plurality offirst zones 210 and a plurality ofsecond zones 220 located outside thefirst zones 210, theprotective layer 113 and thebond pads 112 are covered with the titanium-containingmetal layer 200; thereafter, referring tostep 13 ofFIG. 1 andFIG. 2C , forming aphotoresist layer 300 on the titanium-containingmetal layer 200; afterwards, referring tostep 14 ofFIG. 1 andFIG. 2D , patterning thephotoresist layer 300 to form a plurality ofopening slots 310 corresponded to thefirst zones 210 of the titanium-containingmetal layer 200; then, referring tostep 15 ofFIG. 1 andFIG. 2E , forming a plurality ofcopper bumps 120 at theopening slots 310, each of thecopper bumps 120 comprises afirst top surface 121 and aring surface 122. - Next, referring to
step 16 ofFIG. 1 andFIG. 2F , heating thephotoresist layer 300 to ream theopening slots 310 of thephotoresist layer 300, and the heat process enables thephotoresist layer 300 to form a plurality ofbody portions 320 and a plurality ofremovable portions 330, in this embodiment, the glass transition temperature in the heat process ranges from 70 to 140 degrees; afterwards, referring tostep 17 ofFIG. 1 andFIG. 2G , etching thephotoresist layer 300 to remove theremovable portions 330 and expose the titanium-containingmetal layer 200, in this embodiment, the method for etching thephotoresist layer 300 can be a method of plasma dry etching; thereafter, with reference tostep 18 ofFIG. 1 andFIG. 2H , forming a plurality ofbump protection layers 130 on the titanium-containingmetal layer 200, the firsttop surface 121 and thering surface 122 of each of thecopper bumps 120, wherein each of thebump protection layers 130 comprises ametallic coverage portion 132 and abump coverage portion 131 having a secondtop surface 131 a, the firsttop surface 121 and thering surface 122 of each of thecopper bumps 120 are covered with thebump coverage portion 131, in this embodiment, the material of thebump protection layers 130 can be chosen from one of nickel, palladium or gold. - Next, referring to
step 19 ofFIG. 1 andFIG. 2I , forming a plurality ofwettable layers 140 on the secondtop surfaces 131 a of thebump coverage portions 131; afterwards, referring tostep 20 ofFIG. 1 andFIG. 2J , removing thebody portions 320 of thephotoresist layer 300 to reveal thewettable layers 140 and thebump protection layers 130; eventually, referring tostep 21 ofFIG. 1 andFIG. 2K , removing thesecond zones 220 of the titanium-containingmetal layer 200 to enable each of thefirst zones 210 of the titanium-containingmetal layer 200 to form an underbump metallurgy layer 150 located under each of thecopper bumps 120 therefore forming a fine-pitch bump structure 100, wherein each of the underbump metallurgy layers 150 comprises abearing portion 151 located under each of thecopper bumps 120 and an extendingportion 152 protruded to thering surface 122 of each of thecopper bumps 120, theprotective layer 113 is partly covered with the extendingportion 152 of the underbump metallurgy layers 150, and the extendingportion 152 of each of the underbump metallurgy layers 150 is covered with themetallic coverage portion 132 of each of thebump protection layers 130. The underbump metallurgy layers 150 are made of a material selected from one of titanium/tungsten/gold, titanium/copper and titanium/tungsten/copper. In addition, in this embodiment, each of thebump coverage portions 131 comprises a first outerlateral surface 131 b, wherein each of themetallic coverage portions 132 is protruded to the first outerlateral surface 131 b of thebump coverage portion 131 and comprises a second outerlateral surface 132 a. Furthermore, the extendingportion 152 of each of the underbump metallurgy layers 150 comprises a third outerlateral surface 152 a coplanar with the second outerlateral surface 132 a. Thecopper bumps 120 being covered by thebump protection layers 130 may lower dissociation of copper ions released from thecopper bumps 120, which improves reliability of the fine-pitch bump structure 100 effectively. Besides, the protection of thebump protection layers 130 may prevent thecopper bumps 120 from collapsing when removing thesecond zones 220 of the titanium-containingmetal layer 200. - With reference to
FIG. 2K again, a fine-pitch bump structure 100 in accordance with a preferred embodiment of the present invention at least comprises asilicon substrate 110, a plurality of underbump metallurgy layers 150, a plurality ofcopper bumps 120, a plurality ofbump protection layers 130, and a plurality ofwettable layers 140, wherein thesilicon substrate 110 comprises asurface 111, a plurality ofbond pads 112 disposed at thesurface 111 and aprotective layer 113 disposed at thesurface 111. Theprotective layer 113 comprises a plurality ofopenings 113 a, and thebond pads 112 are revealed by theopenings 113 a. The underbump metallurgy layers 150 are formed on thebond pads 112, each of the underbump metallurgy layers 150 comprises abearing portion 151 and an extendingportion 152, and the underbump metallurgy layers 150 are made of a material selected from one of titanium/tungsten/gold, titanium/copper and titanium/tungsten/copper. Thecopper bumps 120 are formed on the underbump metallurgy layers 150, and each of thecopper bumps 120 comprises afirst top surface 121 and aring surface 122. Thebearing portion 151 of each of the underbump metallurgy layers 150 is located under each of thecopper bumps 120, and the extendingportion 152 of each of the underbump metallurgy layers 150 is protruded to thering surface 122 of each of thecopper bumps 120. Thebump protection layers 130 are formed on the extendingportions 152 of the underbump metallurgy layers 150, the firsttop surface 121 and thering surface 122 of each of thecopper bumps 120. Each of thebump protection layers 130 comprises ametallic coverage portion 132 and abump coverage portion 131 having a secondtop surface 131 a, wherein the firsttop surface 121 and thering surface 122 of each of thecopper bumps 120 are covered with each of thebump coverage portions 131, and the extendingportion 152 of each of the underbump metallurgy layers 150 is covered with each of themetallic coverage portions 132. In this embodiment, the material of thebump protection layers 130 can be chosen from one of nickel, palladium or gold. Thewettable layers 140 are formed on thesecond top surfaces 131 a of thebump coverage portions 131. Thebump coverage portion 131 further comprises a first outerlateral surface 131 b, themetallic coverage portion 132 is protruded to the first outerlateral surface 131 b and comprises a second outerlateral surface 132 a, and the extendingportion 152 of each of the underbump metallurgy layers 150 comprises a third outerlateral surface 152 a coplanar with the second outerlateral surface 132 a. - While this invention has been particularly illustrated and described in detail with respect to the preferred embodiments thereof, it will be clearly understood by those skilled in the art that it is not limited to the specific features and describes and various modifications and changes in form and details may be made without departing from the spirit and scope of this invention.
Claims (5)
1. A fine-pitch bump structure at least comprising:
a silicon substrate having a surface, a plurality of bond pads disposed at the surface and a protective layer disposed at the surface, wherein the protective layer comprised a plurality of openings, and the bond pads are revealed by the openings;
a plurality of under bump metallurgy layers formed on the bond pads, each of the under bump metallurgy layers comprises a bearing portion and an extending portion;
a plurality of copper bumps formed on the under bump metallurgy layers, each of the copper bumps comprises a first top surface and a ring surface, the bearing portion of each of the under bump metallurgy layers is located under each of the copper bumps, and the extending portion of each of the under bump metallurgy layers is protruded to the ring surface of each of the copper bumps;
a plurality of bump protection layers formed on the extending portions of the under bump metallurgy layers, the first top surface and the ring surface of each of the copper bumps, each of the bump protection layers comprises a metallic coverage portion and a bump coverage portion having a second top surface, wherein the first top surface and the ring surface of each of the copper bumps are covered with each of the bump coverage portions, and each of the extending portions is covered with each of the metallic coverage portions; and
a plurality of wettable layers formed on the second top surfaces of the bump coverage portions.
2. The fine-pitch bump structure in accordance with claim 1 , wherein each of the bump coverage portions comprises a first outer lateral surface, each of the metallic coverage portions comprises a second outer lateral surface and is protruded to the first outer lateral surface of the bump coverage portion.
3. The fine-pitch bump structure in accordance with claim 2 , wherein the extending portion of each of the under bump metallurgy layers comprises a third outer lateral surface coplanar with the second outer lateral surface.
4. The fine-pitch bump structure in accordance with claim 1 , wherein the material of the bump protection layers can be chosen from one of nickel, palladium or gold.
5. The fine-pitch bump structure in accordance with claim 1 , wherein the under bump metallurgy layers are made of a material selected from one of titanium/tungsten/gold, titanium/copper and titanium/tungsten/copper.
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US13/893,623 US20130249089A1 (en) | 2012-03-22 | 2013-05-14 | Method for manufacturing fine-pitch bumps and structure thereof |
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US13/426,810 US8501614B1 (en) | 2012-03-22 | 2012-03-22 | Method for manufacturing fine-pitch bumps and structure thereof |
US13/893,623 US20130249089A1 (en) | 2012-03-22 | 2013-05-14 | Method for manufacturing fine-pitch bumps and structure thereof |
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US13/426,810 Division US8501614B1 (en) | 2012-03-22 | 2012-03-22 | Method for manufacturing fine-pitch bumps and structure thereof |
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TWI600129B (en) * | 2013-05-06 | 2017-09-21 | 奇景光電股份有限公司 | Chip on glass structure |
KR20160080974A (en) | 2014-12-30 | 2016-07-08 | 삼성디스플레이 주식회사 | Thin film transistor array substrate, The Method of the same |
US9971970B1 (en) * | 2015-04-27 | 2018-05-15 | Rigetti & Co, Inc. | Microwave integrated quantum circuits with VIAS and methods for making the same |
US11121301B1 (en) | 2017-06-19 | 2021-09-14 | Rigetti & Co, Inc. | Microwave integrated quantum circuits with cap wafers and their methods of manufacture |
US11244914B2 (en) * | 2020-05-05 | 2022-02-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Bond pad with enhanced reliability |
Citations (4)
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US7008867B2 (en) * | 2003-02-21 | 2006-03-07 | Aptos Corporation | Method for forming copper bump antioxidation surface |
US20070155155A1 (en) * | 2003-03-10 | 2007-07-05 | Kazumasa Tanida | Manufacturing method for semiconductor device and semiconductor device |
US20080258299A1 (en) * | 2007-04-20 | 2008-10-23 | Un Byoung Kang | Method of manufacturing a semiconductor device having an even coating thickness using electro-less plating, and related device |
US20130256882A1 (en) * | 2012-03-22 | 2013-10-03 | Chipbond Technology Corporation | Method for manufacturing fine-pitch bumps and structure thereof |
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US5665639A (en) * | 1994-02-23 | 1997-09-09 | Cypress Semiconductor Corp. | Process for manufacturing a semiconductor device bump electrode using a rapid thermal anneal |
US6426281B1 (en) * | 2001-01-16 | 2002-07-30 | Taiwan Semiconductor Manufacturing Company | Method to form bump in bumping technology |
-
2012
- 2012-03-22 US US13/426,810 patent/US8501614B1/en active Active
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- 2013-05-14 US US13/893,623 patent/US20130249089A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7008867B2 (en) * | 2003-02-21 | 2006-03-07 | Aptos Corporation | Method for forming copper bump antioxidation surface |
US20070155155A1 (en) * | 2003-03-10 | 2007-07-05 | Kazumasa Tanida | Manufacturing method for semiconductor device and semiconductor device |
US20080258299A1 (en) * | 2007-04-20 | 2008-10-23 | Un Byoung Kang | Method of manufacturing a semiconductor device having an even coating thickness using electro-less plating, and related device |
US20130256882A1 (en) * | 2012-03-22 | 2013-10-03 | Chipbond Technology Corporation | Method for manufacturing fine-pitch bumps and structure thereof |
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