M431428 五、新型說明： 【新型所屬之技術領域】 [0001] 本創作係有關於一種凸塊結構，特別係有關於一種 微細間距凸塊結構。 【先前技術】 [0002] 在微細間距凸塊結構中，由於銅凸塊之銅離子會產 生游離現象，因此若相鄰銅凸塊之間距太近，容易導致 短路之情形發生。 【新型内容】 [0003] 本創作之主要目的係在於提供一種微細間距凸塊結 構，其至少包含：一矽基板、複數個凸塊下金屬層、複 數個銅凸塊、複數個凸塊保護層以及複數個可潤濕層， 該矽基板係具有一表面、複數個設置於該表面之銲墊及 一設置於該表面之保護層，該保護層係具有複數個開口 ，且該些開口係顯露該些銲墊，該些凸塊下金屬層係形 成於該些銲墊，各該塊下金屬層係具有一凸塊承載部 及一延伸部，該些銅<凸塊係形成於該些凸塊下金屬層， 且各該銅凸塊係具有一第一頂面及一環壁，各該凸塊下 金屬層之該凸塊承載部係位於各該銅凸塊下，各該凸塊 下金屬層之該延伸部係凸出於各該銅凸塊之該環壁，該 些凸塊保護層係形成於該些凸塊下金屬層之該些延伸部 、各該銅凸塊之該第一頂面及該環壁，各該凸塊保護層 係具有一凸塊覆蓋部及一金屬層覆蓋部，各該凸塊覆蓋 部係包覆各該銅凸塊之該第一頂面及該環壁且該凸塊覆 蓋部係具有一第二頂面，各該金屬層覆蓋部係覆蓋各該 1()12()287f單編號A0101 第3頁/共17頁 1012009004-0 M431428 延伸部，該些可潤濕層係形成於該些凸塊覆蓋部之該些 第二頂面。藉由該些凸塊保護層之保護以降低該些銅凸 塊中銅離子游離之現象，進而提高微細間距凸塊結構之 可靠度，且亦可防止移除該含鈦金屬層之該些第二區段 時導致該些銅凸塊產生凹陷之情形。 【實施方式】 請參閱第1及2A至2K圖，其係本創作之一較佳實施例 ，一種微細間距凸塊製造方法係包含下列步驟：首先，M431428 V. New description: [New technical field] [0001] This creation is about a kind of bump structure, especially related to a fine pitch bump structure. [Prior Art] [0002] In the fine pitch bump structure, since copper ions of the copper bumps generate a free phenomenon, if the distance between adjacent copper bumps is too close, a short circuit may easily occur. [New content] [0003] The main purpose of the present invention is to provide a fine pitch bump structure, which comprises at least: a germanium substrate, a plurality of under bump metal layers, a plurality of copper bumps, and a plurality of bump protective layers. And a plurality of wettable layers, the germanium substrate having a surface, a plurality of solder pads disposed on the surface, and a protective layer disposed on the surface, the protective layer having a plurality of openings, and the openings are exposed In the solder pads, the under bump metal layers are formed on the solder pads, and each of the lower metal layers has a bump bearing portion and an extension portion, and the copper bumps are formed on the pads. a metal layer under the bump, and each of the copper bumps has a first top surface and a ring wall, and the bump bearing portion of each of the lower metal layers of the bump is located under each of the copper bumps, and each of the bumps is under the bumps The extension portion of the metal layer protrudes from the ring wall of each of the copper bumps, and the bump protection layer is formed on the extension portions of the underlying metal layer of the bumps, and the second portion of each of the copper bumps a top surface and the ring wall, each of the bump protection layers has a bump covering portion and a metal layer covering portion, each of the bump covering portions covering the first top surface of each of the copper bumps and the ring wall, and the bump covering portion has a second top surface, each of the metal layer covering portions Covering each of the 1()12()287f single number A0101 page 3/17 pages 1012009004-0 M431428 extensions, the wettable layers are formed on the second top surfaces of the bump covering portions . The protection of the bump protection layer reduces the phenomenon of copper ion liberation in the copper bumps, thereby improving the reliability of the fine pitch bump structure, and also preventing the removal of the titanium-containing metal layer. The two segments cause the copper bumps to be recessed. [Embodiment] Please refer to Figures 1 and 2A to 2K, which are a preferred embodiment of the present invention. A fine pitch bump manufacturing method comprises the following steps: First,
請參閱第1圖之步驟11及2A圖，提供一矽基板11〇，該石夕 基板11〇係真有一表面111、複數個設置於該表面111之 銲塾112及一設置於該表面ill之保護層113，該保護層 113係具有複數個開口 ii3a，且該些開口 113a係顯露該 些銲墊112 ;接著，請參聞第1圖之步驟12及2B圖，形成 一含鈦金屬層200於該矽基板11〇，該含鈦金屬層2〇〇係 覆蓋該保護層113及該些銲塾112，且該含鈦金屬層2〇〇 係具有複數個第一區段210及複數個位於該些第一區段 210外側之第二區段220 ;之後，請參閱第1圖之步驟13 及2C圖，形成一光阻層3〇〇於該含鈦金屬層2〇〇 ;接著， 請參閱第1圖之步驟14及2D圖，圖案化該光阻層3〇〇以形 成複數個開槽310，該些開槽310係對應該含鈦金屬層 200之該些第一區段21〇 ;之後，請參閱第1圖之步驟15 及2E圖，形成複數個銅凸塊12〇於該些開槽31〇，各該銅 凸塊120係具有一第一頂面121及一環壁122。 接著’請參閱第1圖之步驟16及2F圖，進行一加熱步 驟’以擴大該光阻層300之各該開槽310 ’且該光阻層 1_287#單编號 A0101 第4頁/共17頁 1012009004-0 M431428 300係受熱形成為複數個本體部320及複數個可移除部 330，在本實施例中，該加熱步殫之玻璃轉換溫度係介於 70〜140°C之間；之後，請參閱第1圖之步驟17及2G圖； 對該光阻層300進行一蝕刻步驟，以移除該些可移除部 330並顯露出該含鈦金屬層200，在本實施例中，該钱刻 步驟中所使用之方法係為電漿乾式蝕刻法；接著，請參 閱第1圖之步驟18及2H圖，形成複數個凸塊保護層130於 該含鈦金屬層200、各該銅凸塊120之該第一頂面121及 該環壁122，在本實施例中，各該凸塊保護層130係具有 一凸塊覆蓋部131及一金屬層覆蓋部132，該凸塊覆蓋部 131係包覆各該銅凸塊120之該第一頂面121及該環壁122 且該凸塊覆蓋部131係具有一第二頂面131a，該些凸塊保 護層130之材質係可選自於鎳、鈀或金其中之一。 之後’請參閲第1圖之步驟19及21圖，形成複數個可 潤濕層140於該些凸塊覆蓋部131之該些第二頂面131a ; 接著’請參閱第I·.圖之步驟20及2J圖，移除該光阻層300 之該些本體部320以顯露出該些可潤濕層140及該些凸塊 保護層130 ;最後，請參閱第1圖之步驟21及2K圖，移除 該含鈦金屬層200之該些第二區段220，以使該含鈦金屬 層200之各s亥第一區段210形成為一位於各該銅凸塊120 下之凸塊下金屬層150以形成一微細間距凸塊結構1〇〇， 且各該凸塊下金屬層150係具有一位於各該銅凸塊120下 之凸塊承載部151及一凸出於各該銅凸塊12〇之該環壁 122之延伸部152，且該凸塊下金屬層150之該延伸部152 係覆蓋該保濩層113，各該凸塊保護層130之該金屬層覆 蓋部132係覆蓋各該凸塊下金屬層150之該延伸部152 , 10120287#單編號 A0101 第5頁/共17頁 1012009004-0 M431428 該些凸塊下金屬層150之材質係選自於鈦/鎢/金、鈦/銅 或鈦/鎢/銅其中之一。此外，在本實施例中，該凸塊覆 蓋部131係具有一第一外側壁131 b，該金屬層覆蓋部1 32 係具有一第二外側壁132a且該金屬層覆蓋部132係凸出於 該凸塊覆蓋部131之該第一外側壁i31b，且各該凸塊下金 屬層150之該延伸部152係具有一第三外側壁i52a，該第 二外側壁152a係與該第二外側壁132a平齊。由於該些銅 凸塊120係被該些凸塊保護層13〇包覆，因此可降低該些 銅凸塊120中銅離子游離之現象，以提高該微細間距凸塊 結構100之可靠度’且藉由該些凸塊保護層13〇之保護， 亦可防止移除該含鈇金屬層2〇〇之該些第二區段220時導 致該些銅凸塊120產生凹陷之情形。 請再參閱第2K圖，其係本創作之一較佳實施例之一 種微細間距凸塊結構1〇〇，其至少包含有一矽基板11〇、 複數個凸塊下金屬層15〇 '複數個銅凸塊丨2〇、複數個凸 塊保護層130以及複數個可潤濕層14〇，該矽基板11〇係 具有一表面111、複數個設置於該表面丨丨丨之銲墊112及 一設置於該表面111之保護層113，該保護層113係具有 複數個開口 113a，且該些開口 ii3a係顯露該些銲墊112 ’該些凸塊下金屬層150係形成於該些銲墊112，各該凸 塊下金屬層150係具有一凸塊承載部151及一延伸部152 ，該些凸塊下金屬層15〇之材質係選自於鈦/鎢/金、鈦/ 銅或鈦/鎢/銅其中之一，該些銅凸塊12〇係形成於該些凸 塊下金屬層150，且各該銅凸塊12〇係具有一第一頂面 121及一環壁122，各該凸塊下金屬層15〇之該凸塊承載 1012009004-0 部151係位於各該銅凸塊120下，各該凸塊下金屬層15〇 1012〇287产單編號A0101 第6頁/共I7頁 M431428 之該延伸部1 5 2係凸出於各該銅凸塊12 0之該環壁1 2 2， 該些凸塊保護層130係形成於該些凸塊下金屬層15〇之該 些延伸部152、各該銅凸塊120之該第一頂面121及該環 壁122 ’各該凸塊保護層130係具有一凸塊覆蓋部131及 一金屬層覆蓋部132 ’各該凸塊覆蓋部131係包覆各該銅 凸塊120之該第一頂面121及該環壁122且該凸塊覆蓋部 131係具有一第二頂面131a，各該金屬層覆蓋部132係覆 蓋各該凸塊下金屬層150之該延伸部152，該些凸塊保護 層130之材質係選自於錄、把或金其中之一，該些可潤濕 層140係形成於該些凸塊覆蓋部131之該些第二頂面igia 。在本實施例中，該凸塊覆蓋部131係具有一第一外側壁 131b ’該金屬層覆蓋部132係具有一第二外側壁丨32a且 該金屬層覆蓋部13 2係凸出於該凸塊覆蓋部131之該第一 外側壁131b，且各該凸塊下金屬層150之該延伸部152係 具有一第三外側壁152a，該第三外侧壁152a係與該第二 外側壁132a平齊。 本創作之保護範圍當視後附之申請專利範圍所界定 者為準，任何熟知此項技藝者，在不脫離本創作之精神 和範圍内所作之任何變化與修改，均屬於本創作之保護 範圍。 【圖式簡單說明】 [0005]帛1圖：依據本創作之一較佳實施例，一種微細間距凸塊 製造方法之流程圖。 第2A至2K圖：依據本創作之一較佳實施例，一種微細間 距凸塊製造方法之截面示意圖。 10120287^^^^* A0101 第7頁/共17頁 1012009004-0 M431428 【主要元件符號說明】 [0006] 11提供一矽基板 -12形成一含鈦金屬層於該矽基板，該含鈦金屬層係具有 複數値第一區段及複數個第二區段 13形成一光阻層於該含欽金屬層 14圖案化該光阻層以形成複數個開槽，該些開槽係對應 該含鈦金屬層之該些第一區段 15形成複數個銅凸塊於該些開槽，各該銅凸塊係具有一 第一頂面及一環壁 16進行一加熱步驟，以擴大該光阻層之各該開槽，且該 光阻層係受熱形成為複數個本體部及複數個可移除部 17對該光阻層進行一蝕刻步驟 18形成複數個凸塊保護層於該含鈦金屬層、各該銅凸塊 之該第一頂面及該環壁 19形成複數個可潤濕層 20移除該光阻層 21移除該含鈦金屬層之該些第二區段，以使該含鈦金屬 層之各該第一區段形成為一位於各該銅凸塊下之凸塊下 金屬層 100微細間距凸塊結構 110矽基板 111表面 112銲墊 113保護層 120銅凸塊 122環壁 131凸塊覆蓋部 131b第一外侧壁 11 3a 開口 121第一頂面 130凸塊保護層 131a第二頂面 132金屬層覆蓋部 i_87i 單编號 A0101 第8頁/共17頁 1012009004-0 M431428 132a 第二外側壁 140 150 凸塊下金屬層 151 152 延伸部 152a 200 含欽金屬層 210 220 第二區段 300 310 330 開槽 可移除部 320 可潤濕層 凸塊承載部 第三外側壁 第一區段 光阻層 本體部 10120287#單編號 A〇101 第9頁/共17頁 1012009004-0Referring to steps 11 and 2A of FIG. 1, a substrate 11 is provided. The substrate 11 has a surface 111, a plurality of pads 112 disposed on the surface 111, and a surface ill disposed thereon. The protective layer 113 has a plurality of openings ii3a, and the openings 113a expose the pads 112. Next, please refer to steps 12 and 2B of FIG. 1 to form a titanium-containing metal layer 200. The titanium-containing metal layer 2 is covered with the protective layer 113 and the solder pads 112, and the titanium-containing metal layer 2 has a plurality of first segments 210 and a plurality of a second section 220 outside the first section 210; afterwards, referring to steps 13 and 2C of FIG. 1, a photoresist layer 3 is formed on the titanium-containing metal layer 2; Referring to steps 14 and 2D of FIG. 1, the photoresist layer 3 is patterned to form a plurality of trenches 310 corresponding to the first segments 21 of the titanium metal layer 200. After that, referring to steps 15 and 2E of FIG. 1 , a plurality of copper bumps 12 are formed on the slots 31 , each of the copper bumps 120 A first top surface 121 and a annular wall 122. Then, please refer to steps 16 and 2F of FIG. 1 to perform a heating step </ RTI> to enlarge each of the slots 310 ′ of the photoresist layer 300 and the photoresist layer 1_287# single number A0101 page 4 of 17 Page 1012009004-0 M431428 300 is formed by heating into a plurality of body portions 320 and a plurality of removable portions 330. In this embodiment, the glass transition temperature of the heating step is between 70 and 140 ° C; Referring to steps 17 and 2G of FIG. 1 , an etching step is performed on the photoresist layer 300 to remove the removable portions 330 and expose the titanium-containing metal layer 200. In this embodiment, The method used in the step of engraving is a plasma dry etching method; then, referring to steps 18 and 2H of FIG. 1 , a plurality of bump protection layers 130 are formed on the titanium-containing metal layer 200 and each of the copper layers. In the embodiment, each of the bump protection layers 130 has a bump cover portion 131 and a metal layer cover portion 132. The bump cover portion is formed by the bump cover portion 131 and the metal layer cover portion 132. The 131 series covers the first top surface 121 and the ring wall 122 of each of the copper bumps 120, and the bump covering portion 131 has a second The top surface 131a, the material of the bump protection layer 130 may be selected from one of nickel, palladium or gold. Then, please refer to steps 19 and 21 of FIG. 1 to form a plurality of wettable layers 140 on the second top surfaces 131a of the bump covering portions 131; then, please refer to the figure I. In steps 20 and 2J, the body portions 320 of the photoresist layer 300 are removed to expose the wettable layers 140 and the bump protection layers 130. Finally, refer to steps 21 and 2K of FIG. The second sections 220 of the titanium-containing metal layer 200 are removed such that the first sections 210 of the titanium-containing metal layer 200 are formed as bumps under the copper bumps 120. The lower metal layer 150 is formed to form a fine pitch bump structure 1 , and each of the under bump metal layers 150 has a bump bearing portion 151 under each of the copper bumps 120 and a protruding portion of the copper The extending portion 152 of the ring wall 122 of the bump 12 is covered by the extending portion 152 of the under bump metal layer 150, and the metal layer covering portion 132 of each of the bump protecting layer 130 is The extension portion 152 covering the under bump metal layer 150, 10120287# single number A0101 5th page/total 17 page 1012009004-0 M431428 The material of the under bump metal layer 150 Since tungsten / gold-titanium / copper or titanium tungsten, copper, titanium one / / /. In addition, in the embodiment, the bump covering portion 131 has a first outer sidewall 131 b, the metal layer covering portion 1 32 has a second outer sidewall 132a and the metal layer covering portion 132 protrudes. The first outer sidewall i31b of the bump covering portion 131, and the extending portion 152 of each of the under bump metal layers 150 has a third outer sidewall i52a, and the second outer sidewall 152a is connected to the second outer sidewall 132a is flush. Since the copper bumps 120 are covered by the bump protection layers 13 , the phenomenon of copper ions in the copper bumps 120 can be reduced to improve the reliability of the fine pitch bump structures 100. The protection of the bump protection layer 13 , can also prevent the copper bumps 120 from being recessed when the second regions 220 of the germanium-containing metal layer 2 are removed. Please refer to FIG. 2K, which is a fine pitch bump structure 1〇〇 according to a preferred embodiment of the present invention, which comprises at least one substrate 11〇, a plurality of under bump metal layers, and a plurality of copper layers. a bump 丨 2 〇, a plurality of bump protection layers 130 , and a plurality of wettable layers 14 〇 , the 矽 substrate 11 具有 has a surface 111 , a plurality of pads 112 disposed on the surface 及 and a set The protective layer 113 of the surface 111 has a plurality of openings 113a, and the openings ii3a expose the pads 112. The under bump metal layers 150 are formed on the pads 112. Each of the under bump metal layers 150 has a bump bearing portion 151 and an extending portion 152. The material of the under bump metal layer 15 is selected from titanium/tungsten/gold, titanium/copper or titanium/tungsten. And one of the copper bumps 12 is formed on the under bump metal layer 150, and each of the copper bumps 12 has a first top surface 121 and a ring wall 122, and each of the bumps The bump bearing 1012009004-0 portion 151 of the lower metal layer 15 is located under each of the copper bumps 120, and each of the under bump metal layers 15 〇 1 The extension portion 1 5 2 of the 012〇287 production order No. A0101 page 6/I7 page M431428 protrudes from the ring wall 1 2 2 of each of the copper bumps 120, and the bump protection layers 130 are formed. The protrusions 152 of the under bump metal layer 15 , the first top surface 121 of each of the copper bumps 120 and the ring wall 122 ′ each of the bump protection layers 130 have a bump cover portion The first cover surface 131 and the ring wall 122 of the copper bumps 120 are respectively covered by the bump cover portion 131 and the bump cover portion 131 has a second top portion. Each of the metal layer covering portions 132 covers the extending portion 152 of each of the under bump metal layers 150. The material of the bump protecting layers 130 is selected from one of a recording, a handle, or a gold. The wettable layer 140 is formed on the second top surfaces iGIS of the bump covering portions 131. In this embodiment, the bump covering portion 131 has a first outer sidewall 131b. The metal layer covering portion 132 has a second outer sidewall 丨 32a and the metal layer covering portion 13 2 protrudes from the convex portion. The first outer sidewall 131b of the block covering portion 131, and the extending portion 152 of each of the under bump metal layers 150 has a third outer sidewall 152a, and the third outer sidewall 152a is flat with the second outer sidewall 132a. Qi. The scope of protection of this creation is subject to the definition of the scope of the patent application, and any changes and modifications made by those skilled in the art without departing from the spirit and scope of this creation are within the scope of protection of this creation. . BRIEF DESCRIPTION OF THE DRAWINGS [0005] FIG. 1 is a flow chart showing a method of manufacturing a fine pitch bump according to a preferred embodiment of the present invention. 2A to 2K are schematic cross-sectional views showing a method of manufacturing a fine pitch bump according to a preferred embodiment of the present invention. 10120287^^^^* A0101 Page 7 of 171012009004-0 M431428 [Description of main component symbols] [0006] 11 provides a substrate 12 to form a titanium-containing metal layer on the germanium substrate, the titanium-containing metal layer Forming a photoresist layer with a plurality of first regions and a plurality of second regions 13 to form a photoresist layer on the metal-containing layer 14 to form a plurality of trenches, the plurality of trenches corresponding to titanium The first segments 15 of the metal layer form a plurality of copper bumps on the plurality of trenches, each of the copper bumps having a first top surface and a ring wall 16 for performing a heating step to expand the photoresist layer. Each of the grooves is formed, and the photoresist layer is formed by heat forming a plurality of body portions and a plurality of removable portions 17 to perform an etching step 18 on the photoresist layer to form a plurality of bump protective layers on the titanium-containing metal layer. The first top surface of each of the copper bumps and the ring wall 19 form a plurality of wettable layers 20. The photoresist layer 21 is removed to remove the second portions of the titanium-containing metal layer to enable the Each of the first sections of the titanium metal layer is formed as a sub-bump metal layer 100 fine pitch bumps under each of the copper bumps 110 矽 substrate 111 surface 112 pad 113 protective layer 120 copper bump 122 ring wall 131 bump cover portion 131b first outer sidewall 11 3a opening 121 first top surface 130 bump protection layer 131a second top surface 132 metal layer Covering part i_87i Single number A0101 Page 8 / Total 17 pages 1012009004-0 M431428 132a Second outer side wall 140 150 Lower bump metal layer 151 152 Extension 152a 200 Metal layer 210 220 Second section 300 310 330 Open Slot Removable Portion 320 Wettable Layer Bump Bearing Portion Third Outer Side Wall 1st Section Photoresist Layer Body Part 10120287#单号A〇101 Page 9/Total 17 Page 1012009004-0