CN103132140A - Hydride vapor phase epitaxy device - Google Patents

Hydride vapor phase epitaxy device Download PDF

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Publication number
CN103132140A
CN103132140A CN2011103771924A CN201110377192A CN103132140A CN 103132140 A CN103132140 A CN 103132140A CN 2011103771924 A CN2011103771924 A CN 2011103771924A CN 201110377192 A CN201110377192 A CN 201110377192A CN 103132140 A CN103132140 A CN 103132140A
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China
Prior art keywords
phase epitaxy
vapor phase
heating unit
reaction chamber
slide glass
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Pending
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CN2011103771924A
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Chinese (zh)
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甘志银
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Individual
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Priority to CN2011103771924A priority Critical patent/CN103132140A/en
Priority to PCT/CN2012/000610 priority patent/WO2013075390A1/en
Publication of CN103132140A publication Critical patent/CN103132140A/en
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4488—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by in situ generation of reactive gas by chemical or electrochemical reaction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides

Abstract

The invention discloses a hydride vapor phase epitaxy device. The hydride vapor phase epitaxy device comprises a vapor phase epitaxy reaction chamber. An upper part of the vapor phase epitaxy reaction chamber is provided with an air inlet device. A quartz boat is arranged below the air inlet device. A lower part of the vapor phase epitaxy reaction chamber is provided with a slide tray. Heaters are arranged below and above the slide tray. The heater below the slide tray is isolated from a reaction zone by a slide tray support. The bottom of the vapor phase epitaxy reaction chamber is provided with an exhaust port. The hydride vapor phase epitaxy device can realize preparation of a metal chloride in the vapor phase epitaxy reaction chamber and realize material epitaxy, and has a simple structure. The heaters below and above the slide tray can adjust temperature gradient distribution in the vapor phase epitaxy reaction chamber so that material crystal quality is improved. The hydride vapor phase epitaxy device has an extensible design and can be combined with metallo-organic compound vapor phase epitaxy equipment.

Description

Hydride gas-phase epitaxy apparatus
Technical field
The invention belongs to technical field of semiconductors, relate to a kind of hydride gas-phase epitaxy apparatus.
Background technology
The characteristics such as the nitride material take gan (GaN) based compound as representative has the energy bandwidth, saturated electrons speed is high, voltage breakdown is large, specific inductivity is little.For GaN, its stable chemical nature, high temperature resistant, corrosion-resistant, be very suitable for making radioprotective, high frequency, high-power and superintegrated electron device and indigo plant, green glow and ultraviolet photoelectron device, so the GaN base compound material has become the study hotspot of develop rapidly at present.
At present, the topmost problem that faces of nitride material growth is to lack suitable substrate.Because directly synthetic GaN monocrystalline is more difficult, need the condition of High Temperature High Pressure, and the monocrystalline size that grows out is little, can not satisfy the requirement of production.Therefore, present business-like GaN base device is substantially all to adopt hetero epitaxy, the substrate material that uses mainly contains sapphire, silicon carbide and silicon etc., lattice mismatch and thermal mismatching between these substrates and GaN material are larger, cause having larger stress in material and producing higher dislocation desity, be unfavorable for the raising of GaN base device performance.If can carry out isoepitaxial growth on GaN, just reduce injection defect largely, make performance of devices that huge leap be arranged.The method of growing GaN body monocrystalline mainly comprises high temperature and high pressure method, subliming method, Na fusion-crystallization method and hydride vapour phase epitaxy method at present, wherein first three methods all has high requirements to equipment and process, and be difficult to realize large size GaN monocrystalline, can't satisfy business-like requirement, and hydride gas-phase epitaxy (HVPE) technology has the advantages such as equipment is simple, cost is low, fast growth, has become growing GaN thick film effective means the most.Early stage people mainly adopt hydride gas-phase epitaxy technology direct growth GaN thick film on Sapphire Substrate, then are separated, and obtain the GaN substrate material.The GaN epitaxial film Dislocations density of this method growth is very high, and present main method is to adopt the modes such as horizontal extension, suspension extension to be aided with the two-forty epitaxy technology growth thick film of hydride gas-phase epitaxy, obtains the lower GaN substrate material of dislocation desity.
Due to restrictions such as traditional hydride gas-phase epitaxy apparatus internal structure, air-flow transport, the homogeneity of growing large-size GaN substrate material can't be guaranteed, simultaneously also be difficult to produce in enormous quantities, therefore still require further improvement traditional hydride gas-phase epitaxy apparatus.
Summary of the invention
The objective of the invention is for the defective that exists in prior art, a kind of New Hydrogen compound gas-phase epitaxy apparatus is provided.
For achieving the above object, hydride gas-phase epitaxy apparatus provided by the invention, main body is a vapour phase epitaxy reaction chamber, this reaction chamber top is provided with diffuser, can pass into according to the requirement of epitaxy technique the carrier gas such as the reactant gases of different sorts, different flow or flow velocity, different concns or hydrogen, nitrogen; Diffuser below is provided with a quartz boat placing source metal, the hcl reaction gas generation metal chloride that reacts with it; The reaction chamber bottom is provided with the slide glass dish to place substrate material; Slide glass dish below and top are provided with heating unit, can provide the reaction of hydrogen chloride gas and source metal required thermal source, while two temperature gradient distribution that heating unit can be regulated reaction chamber inside are to satisfy the needed reaction conditions of hydride gas-phase epitaxy in reaction chamber; The heating unit of slide glass dish below is supported by the slide glass dish with reaction zone and separates, and is provided with venting port bottom reaction chamber.
In described vapour phase epitaxy reaction chamber, the quartz boat of diffuser below is silica tube or the vitrified pipe with opening, and this pipe is spaced in many Guan Zaiyi planes for straight tube or ring pipe.
In described vapour phase epitaxy reaction chamber, the heating unit of slide glass dish top is located at below quartz boat, and between slide glass dish and quartz boat, this heating unit is made by the high-temperature material material, as tungsten, tantalum etc.; The heating unit of this heating unit is spaced in a plane.The heating unit outside surface of this heating unit has the isolated material of avoiding heating unit and gas reaction.
Advantage of the present invention is to generate metal chloride and carry out the epitaxy of material in a reaction chamber, and is simple in structure.The temperature gradient distribution that the heating unit of slide glass dish above and below can be regulated reaction chamber inside, thereby the crystal mass of improvement material.This reaction chamber design has extensibility simultaneously, and can be combined with organometallics vapour phase epitaxy equipment.
Description of drawings
Fig. 1 is the structural representation of apparatus of the present invention;
Fig. 2 is the spaced straight tube structure schematic diagram of the quartz boat 4 of apparatus of the present invention;
Fig. 3 is the spaced heating unit structural representation of the heating unit of apparatus of the present invention.
In figure: 1 diffuser, 2 cavity water wall, 3 source metal, 4 quartz boats, 5 heating units, 6 slide glass dishes, 7 substrates, 8 heating units, 9 slide glass dish supports, 10 venting ports, 11 reaction zones, 12 support.
Embodiment
Below in conjunction with embodiment and accompanying drawing, the present invention is described in further detail.
Embodiment one:
As shown in Figure 1, be the design diagram of apparatus of the present invention.
Vapour phase epitaxy reaction chamber top is provided with diffuser 1, can pass into according to the requirement of epitaxy technique the carrier gas such as the reactant gases of different sorts, different flow or flow velocity, different concns or hydrogen, nitrogen; Diffuser 1 below is provided with quartz boat 4, and these quartz boat 4 use are made with silica tube or the vitrified pipe of opening, and the interior placement source metal 3 of quartz boat 4 has hcl reaction gas that diffuser 1 the passes into generation metal chloride that reacts with it; The reaction chamber bottom is provided with slide glass dish 6 to place substrate 7; Slide glass dish 6 belows are provided with heating unit 8, slide glass dish 6 tops are being provided with heating unit 5 below quartz boat 4 between slide glass dish 6 and quartz boat 4, the heating unit outside surface of this heating unit 5 has the isolated material of avoiding heating unit and gas reaction, this heating unit 5 can provide hydrogen chloride gas and source metal to react required thermal source, while two temperature gradient distribution that heating unit can be regulated reaction chamber inside are to satisfy the needed reaction conditions of hydride gas-phase epitaxy in reaction chamber; Heating unit 5 is positioned at quartz boat 4 belows, and jointly fixing by supporting 12 with quartz boat 4; Heating unit 8 supports 9 with reaction zone 11 by the slide glass dish and separates; The reaction chamber bottom is provided with exhaust, and 10, the gas that generates after reaction is discharged by venting port 10.
Take the epitaxial process of gan as example, hydrogen chloride gas and ammonia are carried through diffuser 1 by carrier gas and enter in reaction chamber, heating unit 5 is heated to 1000 left and right ℃, quartz boat is above heating unit 5, under the setting of suitable distance, can allow quartz boat 4 be in the zone that temperature 800 is spent the left and right.Source metal 3 in hydrogen chloride gas and quartz boat 4 reacts and generates gallium chloride gas, and chlorination is sowed with ammonia and freeed the reaction growing gallium nitride near heating unit 5, is deposited on simultaneously substrate 7 Surface Creation films.Slide glass dish 6 below heating units 8 are heated to 1000 ℃ of left and right, make the suitable thermograde of formation between slide glass dish 6 top heating units 5 and substrate 7, be conducive to generate gallium nitride film and be deposited on substrate 7 surfaces, the gas that reaction generates is discharged by venting port 10.
Embodiment two:
The present embodiment is identical with embodiment one, and difference is that quartz boat 4 is straight tube or the ring pipe of silica tube or vitrified pipe, spaced straight tube structure in many Guan Zaiyi planes.As Fig. 2 not.
Embodiment three:
The present embodiment is identical with embodiment one, and difference is heating unit 5 heating units spaced heating unit structure in a plane of slide glass dish 6 tops.As shown in Figure 3

Claims (7)

1. hydride gas-phase epitaxy apparatus, comprise a vapour phase epitaxy reaction chamber, it is characterized in that reaction chamber top is provided with diffuser, the diffuser below is provided with a quartz boat, the reaction chamber bottom is provided with the slide glass dish, slide glass dish below and top are provided with heating unit, and the heating unit of slide glass dish below is separated by the support of slide glass dish with reaction zone, are provided with venting port bottom reaction chamber.
2. hydride gas-phase epitaxy apparatus according to claim 1, wherein quartz boat is with making with silica tube or the vitrified pipe of opening.
3. hydride gas-phase epitaxy apparatus according to claim 1, wherein quartz boat with straight tube or the ring pipe of silica tube or vitrified pipe, is spaced in many Guan Zaiyi planes.
4. hydride gas-phase epitaxy apparatus according to claim 1, wherein the heating unit of slide glass dish top is by the high-temperature material manufacturing.
5. hydride gas-phase epitaxy apparatus according to claim 1, wherein the heating unit of the heating unit of slide glass dish top is spaced in a plane.
6. hydride gas-phase epitaxy apparatus according to claim 1, wherein the heating unit outside surface of the heating unit of slide glass dish top has the isolated material of avoiding heating unit and gas reaction.
7. hydride gas-phase epitaxy apparatus according to claim 1, wherein the position of the heating unit of slide glass dish top is between slide glass dish and quartz boat.
CN2011103771924A 2011-11-23 2011-11-23 Hydride vapor phase epitaxy device Pending CN103132140A (en)

Priority Applications (2)

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CN2011103771924A CN103132140A (en) 2011-11-23 2011-11-23 Hydride vapor phase epitaxy device
PCT/CN2012/000610 WO2013075390A1 (en) 2011-11-23 2012-05-07 Hydride vapor phase epitaxy device

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Application Number Priority Date Filing Date Title
CN2011103771924A CN103132140A (en) 2011-11-23 2011-11-23 Hydride vapor phase epitaxy device

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105493240A (en) * 2013-08-19 2016-04-13 艾力克西·安德里维奇·亚伦达伦柯 Method of producing epitaxial layer of binary semiconductor material

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US6936357B2 (en) * 2001-07-06 2005-08-30 Technologies And Devices International, Inc. Bulk GaN and ALGaN single crystals
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105493240A (en) * 2013-08-19 2016-04-13 艾力克西·安德里维奇·亚伦达伦柯 Method of producing epitaxial layer of binary semiconductor material
CN105493240B (en) * 2013-08-19 2017-04-12 艾力克西·安德里维奇·亚伦达伦柯 Method of producing epitaxial layer of binary semiconductor material

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Application publication date: 20130605