WO2013075390A1 - Hydride vapor phase epitaxy device - Google Patents

Hydride vapor phase epitaxy device Download PDF

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Publication number
WO2013075390A1
WO2013075390A1 PCT/CN2012/000610 CN2012000610W WO2013075390A1 WO 2013075390 A1 WO2013075390 A1 WO 2013075390A1 CN 2012000610 W CN2012000610 W CN 2012000610W WO 2013075390 A1 WO2013075390 A1 WO 2013075390A1
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Prior art keywords
vapor phase
phase epitaxy
reaction chamber
hydride vapor
heating
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PCT/CN2012/000610
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French (fr)
Chinese (zh)
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甘志银
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Gan Zhiyin
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Publication of WO2013075390A1 publication Critical patent/WO2013075390A1/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4488—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by in situ generation of reactive gas by chemical or electrochemical reaction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides

Definitions

  • the invention belongs to the technical field of semiconductors and relates to a hydride vapor phase epitaxy device.
  • a nitride material typified by a gallium nitride (GaN)-based compound has characteristics such as a high energy bandwidth, a high saturation electron velocity, a large breakdown voltage, and a small dielectric constant.
  • GaN gallium nitride
  • its chemical properties are stable, high temperature resistant and corrosion resistant. It is very suitable for making radiation-resistant, high-frequency, high-power and high-density integrated electronic devices as well as blue, green and ultraviolet optoelectronic devices. Therefore, GaN-based compound materials At present, it has become a research hotspot of rapid development.
  • the most important problem facing the growth of nitride materials is the lack of a suitable substrate. Since it is difficult to directly synthesize a GaN single crystal, high temperature and high pressure conditions are required, and the size of the grown single crystal is small, which cannot meet the production requirements. Therefore, the commercialized GaN-based devices are basically heteroepitaxial.
  • the substrate materials used mainly include sapphire, silicon carbide and silicon. The lattice mismatch and thermal mismatch between these substrates and GaN materials are better. Large, resulting in large stresses in the material and high dislocation density, is not conducive to the performance of GaN-based devices. If homoepitaxial growth can be performed on GaN, defects can be greatly reduced, and the performance of the device can be greatly leap.
  • the methods for growing GaN bulk single crystals mainly include high temperature and high pressure method, sublimation method, Na melt crystallization method and hydride vapor phase epitaxy method, wherein the first three methods have high requirements on equipment and processes, and it is difficult to realize large size GaN single Crystallization cannot meet the requirements of commercialization, and hydride vapor phase epitaxy (HVPE) technology has the advantages of simple equipment, low cost and fast growth rate, and has become the most effective method for growing GaN thick films.
  • HVPE hydride vapor phase epitaxy
  • GaN thick films were directly grown on sapphire substrates by hydride vapor phase epitaxy, and then separated to obtain GaN substrate materials. The dislocation density in the GaN epitaxial layer grown by this method is very high.
  • the current main method is to use lateral epitaxy, suspension epitaxy, etc. with hydride vapor phase epitaxy.
  • a high-rate epitaxial technique is used to grow a thick film to obtain a GaN substrate material having a lower dislocation density. Due to the limitations of the internal structure and airflow transport of conventional hydride vapor phase epitaxy devices, the uniformity of growing large-sized GaN substrate materials cannot be ensured, and it is difficult to carry out mass production. Therefore, it is still necessary to further improve the conventional hydride vapor phase epitaxy apparatus. .
  • An object of the present invention is to provide a novel hydride vapor phase epitaxy apparatus in view of the deficiencies in the prior art.
  • the hydride vapor phase epitaxy device provided by the invention has a gas phase epitaxial reaction chamber, and an air inlet device is arranged on the upper portion of the reaction chamber, and different types, different flow rates or flow rates can be introduced according to the requirements of the epitaxial process.
  • reaction gas or carrier gas such as hydrogen or nitrogen
  • a quartz boat is placed under the air intake device to place a metal source, and a hydrogen chloride reaction gas reacts with it to form a metal chloride
  • a carrier disk is disposed at a lower portion of the reaction chamber to place a substrate material
  • a heating device is provided below and above the slide disc to provide a heat source for reacting hydrogen chloride gas with the metal source, and two heating devices can adjust the temperature gradient distribution inside the reaction chamber to satisfy the hydride vapor phase epitaxy in the reaction chamber.
  • the required reaction conditions; the heating device below the slide tray is separated from the reaction zone by a slide disc support, and the bottom of the reaction chamber is provided with an exhaust port.
  • the quartz boat under the air intake device in the gas phase epitaxial reaction chamber is an open quartz tube or a ceramic tube, and the tube is a straight tube or a ring tube, and the plurality of tubes are arranged in a plane.
  • the heating device above the slide disk in the gas phase epitaxy reaction chamber is disposed under the quartz boat and between the carrier disk and the quartz boat.
  • the heating device is made of high temperature material, such as tungsten, tantalum, etc.; heating of the heating device
  • the components are arranged in a plane.
  • the outer surface of the heating element of the heating device has an insulating material that prevents the heating element from reacting with the gas.
  • the invention has the advantages that metal chloride can be formed in one reaction chamber and epitaxial growth of the material can be carried out, and the structure is simple.
  • the heating means above and below the slide disc adjusts the temperature gradient distribution inside the reaction chamber to improve the crystal quality of the material.
  • the reaction chamber design has It is scalable and can be used in conjunction with metal organic compound vapor phase epitaxy equipment.
  • Figure 1 is a schematic structural view of the device of the present invention
  • FIG. 2 is a schematic view showing the structure of a straight tube in which the quartz boat 4 of the device of the present invention is arranged at intervals;
  • Figure 3 is a schematic view showing the structure of a heating device in which the heating elements of the apparatus of the present invention are arranged at intervals.
  • Intake device 2 cavity water wall, 3 metal source, 4 quartz boat, 5 heating device, 6 slides, 7 substrates, 8 heating device, 9 slide support, 10 exhaust ports , 11 reaction zones, 12 supports.
  • Embodiment 1 is a diagrammatic representation of Embodiment 1:
  • FIG. 1 it is a schematic diagram of the design of the device of the present invention.
  • An air intake device 1 is arranged on the upper part of the gas phase epitaxy reaction chamber, and different types, different flow rates or flow rates, different concentrations of reaction gases or carrier gases such as hydrogen and nitrogen can be introduced according to the requirements of the epitaxial process; a quartz boat is arranged below the air intake device 1 4, the quartz boat 4 is made of a quartz tube or a ceramic tube with a mouthwash, a metal source 3 is placed in the quartz boat 4, and a hydrogen chloride reaction gas introduced into the air inlet device 1 reacts with it to form a metal chloride;
  • the lower part of the cavity is provided with a carrier disk 6 for placing the substrate 7; below the carrier disk 6, a heating device 8 is arranged, and above the carrier disk 6, a heating device is arranged between the carrier disk 6 and the quartz boat 4 below the quartz boat 4.
  • the outer surface of the heating element of the heating device 5 has an insulating material for preventing the heating element from reacting with the gas.
  • the heating device 5 can provide a heat source required for the reaction of the hydrogen chloride gas with the metal source, and the two heating devices can adjust the interior of the reaction chamber.
  • the temperature gradient is distributed to meet the reaction conditions required for hydride vapor phase epitaxy in the reaction chamber; the heating device 5 is located below the quartz boat 4 and is fixed by the support 12 together with the quartz boat 4; 8 the reaction zone by a carrier sheet 11 spaced from the disc support 9; bottom of the reactor, an exhaust chamber 10, gas generated after the reaction is discharged from the exhaust port 10.
  • hydrogen chloride gas and ammonia gas are carried by the carrier gas through the air intake device 1 into the reaction chamber, and the heating device 5 is heated to about 1000 ° C, and the quartz boat is above the heating device 5 .
  • the quartz boat 4 can be placed in an area of about 800 degrees.
  • the hydrogen chloride gas reacts with the metal source 3 in the quartz boat 4 to form gallium chloride gas.
  • the chlorination reaction reacts with the ammonia gas to grow gallium nitride, and deposits on the surface of the substrate 7 to form a film.
  • the heating device 8 under the loading tray 6 is heated to about 1000 ° C, so that a suitable temperature gradient is formed between the heating device 5 above the carrier disk 6 and the substrate 7, which is favorable for depositing a gallium nitride film on the surface of the substrate 7.
  • the gas generated by the reaction is discharged from the exhaust port 10.
  • Embodiment 2 is a diagrammatic representation of Embodiment 1:
  • This embodiment is the same as the first embodiment except that the quartz boat 4 is a straight tube or a ring tube of a quartz tube or a ceramic tube, and the plurality of tubes are arranged in a straight line structure arranged in a plane.
  • the third embodiment the third embodiment:
  • This embodiment is the same as the first embodiment except that the heating means 5 above the carrier disk 6 are arranged in a planar arrangement of heating means. As shown in Figure 3

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electrochemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

A hydride vapor phase epitaxy device comprises a vapor phase epitaxy reaction chamber. A gas input device (1) is disposed on an upper portion of the reaction chamber. A quartz boat (4) is disposed below the gas input device (1). A chip-carrying disk (6) is disposed on a lower portion of the reaction chamber. A heating device (5, 8) is disposed above and below the chip-carrying disk (6). The heating device (8) below the chip-carrying disk (6) is separated from a reaction region (11) by a chip-carrying disk support (9). The bottom of the reaction chamber is provided with a gas discharging port (10). The advantages of the present invention are: generation of a metal chloride and epitaxy growing of the material may be performed in one reaction chamber, thereby making the structure simple; the heating device above and below the chip-carrying disk can adjust the temperature gradient distribution in the reaction chamber, thereby improving the crystal quality of the material; the device has the extensible design and can be used in combination with organometallic compound vapor phase epitaxy equipment.

Description

氢化物气相外延装置  Hydride vapor phase epitaxy
技术领域 Technical field
本发明属于半导体技术领域， 涉及一种氢化物气相外延装置。  The invention belongs to the technical field of semiconductors and relates to a hydride vapor phase epitaxy device.
背景技术 Background technique
以氮化镓 (GaN) 基化合物为代表的氮化物材料具有能带宽、 饱和 电子速率高、击穿电压大、介电常数小等特点。对于 GaN而言， 其化学 性质稳定， 耐高温、 耐腐蚀， 非常适合于制作抗辐射、 高频、 大功率和 高密度集成的电子器件以及蓝、绿光和紫外光电子器件，因此 GaN基化 合物材料目前已成为飞速发展的研究热点。  A nitride material typified by a gallium nitride (GaN)-based compound has characteristics such as a high energy bandwidth, a high saturation electron velocity, a large breakdown voltage, and a small dielectric constant. For GaN, its chemical properties are stable, high temperature resistant and corrosion resistant. It is very suitable for making radiation-resistant, high-frequency, high-power and high-density integrated electronic devices as well as blue, green and ultraviolet optoelectronic devices. Therefore, GaN-based compound materials At present, it has become a research hotspot of rapid development.
目前， 氮化物材料生长面临的最主要的问题在于缺乏合适的衬底。 因为直接合成 GaN单晶比较困难，需要高温高压的条件，而且生长出来 的单晶尺寸小， 不能满足生产的要求。 因此， 目前商业化的 GaN基器件 基本都是采用异质外延，使用的衬底材料主要有蓝宝石、碳化硅和硅等， 这些衬底与 GaN材料之间的晶格失配和热失配较大，导致材料中存在较 大的应力并产生较高的位错密度，不利于 GaN基器件性能的提高。如果 能在 GaN上进行同质外延生长，就可很大程度地减少缺陷，使器件的性 能有巨大的飞跃。 目前生长 GaN体单晶的方法主要包括高温高压法、升 华法、 Na熔融结晶法和氢化物气相外延法， 其中前三种方法对设备和 工艺都有很高要求，并且难以实现大尺寸 GaN单晶，无法满足商业化的 要求， 而氢化物气相外延 （HVPE) 技术具有设备简单、 成本低、 生长 速度快等优点， 已成为生长 GaN厚膜最为有效的方法。早期人们主要采 用氢化物气相外延技术在蓝宝石衬底上直接生长 GaN厚膜， 再加以分 离，获得 GaN衬底材料。这种方法生长的 GaN外延层中位错密度很高， 目前的主要方法是采用横向外延、悬挂外延等方式辅以氢化物气相外延 的高速率外延技术生长厚膜， 来获得位错密度较低的 GaN衬底材料。 由于传统氢化物气相外延装置内部结构、 气流输运等限制， 生长大 尺寸 GaN衬底材料的均匀性无法得到保证， 同时也难以进行大批量生 产， 因此仍需要进一步改进传统的氢化物气相外延装置。 Currently, the most important problem facing the growth of nitride materials is the lack of a suitable substrate. Since it is difficult to directly synthesize a GaN single crystal, high temperature and high pressure conditions are required, and the size of the grown single crystal is small, which cannot meet the production requirements. Therefore, the commercialized GaN-based devices are basically heteroepitaxial. The substrate materials used mainly include sapphire, silicon carbide and silicon. The lattice mismatch and thermal mismatch between these substrates and GaN materials are better. Large, resulting in large stresses in the material and high dislocation density, is not conducive to the performance of GaN-based devices. If homoepitaxial growth can be performed on GaN, defects can be greatly reduced, and the performance of the device can be greatly leap. At present, the methods for growing GaN bulk single crystals mainly include high temperature and high pressure method, sublimation method, Na melt crystallization method and hydride vapor phase epitaxy method, wherein the first three methods have high requirements on equipment and processes, and it is difficult to realize large size GaN single Crystallization cannot meet the requirements of commercialization, and hydride vapor phase epitaxy (HVPE) technology has the advantages of simple equipment, low cost and fast growth rate, and has become the most effective method for growing GaN thick films. In the early days, GaN thick films were directly grown on sapphire substrates by hydride vapor phase epitaxy, and then separated to obtain GaN substrate materials. The dislocation density in the GaN epitaxial layer grown by this method is very high. The current main method is to use lateral epitaxy, suspension epitaxy, etc. with hydride vapor phase epitaxy. A high-rate epitaxial technique is used to grow a thick film to obtain a GaN substrate material having a lower dislocation density. Due to the limitations of the internal structure and airflow transport of conventional hydride vapor phase epitaxy devices, the uniformity of growing large-sized GaN substrate materials cannot be ensured, and it is difficult to carry out mass production. Therefore, it is still necessary to further improve the conventional hydride vapor phase epitaxy apparatus. .
发明内容 Summary of the invention
本发明的目的是针对已有技术中存在的缺陷， 提供一种新型氢化物 气相外延装置。  SUMMARY OF THE INVENTION An object of the present invention is to provide a novel hydride vapor phase epitaxy apparatus in view of the deficiencies in the prior art.
为实现上述目的， 本发明提供的氢化物气相外延装置， 主体为一个 气相外延反应腔， 该反应腔上部设有进气装置， 可根据外延工艺的要求 通入不同种类、 不同流量或流速、 不同浓度的反应气体或者氢气、 氮气 等载气； 进气装置下方设有一石英舟以放置金属源， 氯化氢反应气体与 之发生反应生成金属氯化物； 反应腔下部设有载片盘以放置衬底材料； 载片盘下方和上方设有加热装置， 可提供氯化氢气体与金属源反应所需 的热源， 同时两个加热装置可调节反应腔内部的温度梯度分布， 以满足 反应腔内氢化物气相外延所需要的反应条件； 载片盘下方的加热装置与 反应区由载片盘支撑隔开， 反应腔底部设有排气口。  In order to achieve the above object, the hydride vapor phase epitaxy device provided by the invention has a gas phase epitaxial reaction chamber, and an air inlet device is arranged on the upper portion of the reaction chamber, and different types, different flow rates or flow rates can be introduced according to the requirements of the epitaxial process. Concentration of reaction gas or carrier gas such as hydrogen or nitrogen; a quartz boat is placed under the air intake device to place a metal source, and a hydrogen chloride reaction gas reacts with it to form a metal chloride; a carrier disk is disposed at a lower portion of the reaction chamber to place a substrate material A heating device is provided below and above the slide disc to provide a heat source for reacting hydrogen chloride gas with the metal source, and two heating devices can adjust the temperature gradient distribution inside the reaction chamber to satisfy the hydride vapor phase epitaxy in the reaction chamber. The required reaction conditions; the heating device below the slide tray is separated from the reaction zone by a slide disc support, and the bottom of the reaction chamber is provided with an exhaust port.
所述气相外延反应腔内进气装置下方的石英舟为带开口的石英管 或者陶瓷管， 该管为直管或环形管， 多根管在一个平面内间隔排列。  The quartz boat under the air intake device in the gas phase epitaxial reaction chamber is an open quartz tube or a ceramic tube, and the tube is a straight tube or a ring tube, and the plurality of tubes are arranged in a plane.
所述气相外延反应腔内载片盘上方的加热装置设于石英舟下方， 位 于载片盘与石英舟之间，该加热装置由高温材料材料制造，如钨、钜等； 该加热装置的加热元件在一个平面内间隔排列。 该加热装置的加热元件 外表面有避免加热元件与气体反应的隔离材料。  The heating device above the slide disk in the gas phase epitaxy reaction chamber is disposed under the quartz boat and between the carrier disk and the quartz boat. The heating device is made of high temperature material, such as tungsten, tantalum, etc.; heating of the heating device The components are arranged in a plane. The outer surface of the heating element of the heating device has an insulating material that prevents the heating element from reacting with the gas.
本发明的优点是可在一个反应腔内生成金属氯化物并进行材料的 外延生长， 结构简单。 载片盘上方和下方的加热装置可调节反应腔内部 的温度梯度分布 从而改进材料的晶体质量。 同时该反应腔设计方案具 有可扩展性， 并可与金属有机化合物气相外延设备结合使用。 The invention has the advantages that metal chloride can be formed in one reaction chamber and epitaxial growth of the material can be carried out, and the structure is simple. The heating means above and below the slide disc adjusts the temperature gradient distribution inside the reaction chamber to improve the crystal quality of the material. At the same time, the reaction chamber design has It is scalable and can be used in conjunction with metal organic compound vapor phase epitaxy equipment.
附图说明 DRAWINGS
图 1为本发明装置的结构示意图； Figure 1 is a schematic structural view of the device of the present invention;
图 2 为本发明装置的石英舟 4间隔排列的直管结构示意图； 2 is a schematic view showing the structure of a straight tube in which the quartz boat 4 of the device of the present invention is arranged at intervals;
图 3为本发明装置的加热元件间隔排列的加热装置结构示意图。 Figure 3 is a schematic view showing the structure of a heating device in which the heating elements of the apparatus of the present invention are arranged at intervals.
图中： 1·进气装置、 2腔体水冷壁、 3金属源、 4石英舟、 5加热装 置、 6载片盘、 7衬底、 8加热装置、 9载片盘支撑、 10排气口、 11反应 区、 12支撑。  In the figure: 1. Intake device, 2 cavity water wall, 3 metal source, 4 quartz boat, 5 heating device, 6 slides, 7 substrates, 8 heating device, 9 slide support, 10 exhaust ports , 11 reaction zones, 12 supports.
具体实施方式 detailed description
下面结合实施例及附图进一步详细描述本发明。  The invention will be described in further detail below with reference to the embodiments and the accompanying drawings.
实施例一： Embodiment 1:
如图 1所示， 为本发明装置的设计示意图。  As shown in FIG. 1, it is a schematic diagram of the design of the device of the present invention.
气相外延反应腔上部设有进气装置 1， 可根据外延工艺的要求通入 不同种类、 不同流量或流速、 不同浓度的反应气体或者氢气、 氮气等载 气； 进气装置 1下方设有石英舟 4， 该石英舟 4用带幵口的石英管或者 陶瓷管做成， ·石英舟 4内放置金属源 3， 有进气装置 1通入的氯化氢反 应气体与之发生反应生成金属氯化物； 反应腔下部设有载片盘 6以放置 衬底 7; 载片盘 6下方设有加热装置 8, 载片盘 6上方在石英舟 4下方 位于载片盘 6与石英舟 4之间设有加热装置 5， 该加热装置 5的加热元 件外表面有避免加热元件与气体反应的隔离材料， 该加热装置 5可提供 氯化氢气体与金属源反应所需的热源， 同时两个加热装置可调节反应腔 内部的温度梯度分布， 以满足反应腔内氢化物气相外延所需要的反应条 件； 加热装置 5位于石英舟 4下方， 并与石英舟 4共同由支撑 12固定； 加热装置 8与反应区 11由载片盘支撑 9隔开;反应腔底部设有排气， 10， 反应后生成的气体由排气口 10排出。 以氮化镓的外延生长过程为例， 氯化氢气体与氨气由载气携带经进 气装置 1进入反应腔内， 将加热装置 5加热到 1000左右 °C， 石英舟在 加热装置 5的上方，在适当距离的设置下，可以让石英舟 4处在温度 800 度左右的区域。氯化氢气体与石英舟 4内的金属源 3发生反应生成氯化 镓气体， 在加热装置 5附近氯化稼与氨气放生反应生长氮化镓， 同时沉 积在衬底 7表面生成薄膜。将载片盘 6下方加热装置 8加热到 1000°C左 右， 使得载片盘 6上方加热装置 5与衬底 7之间形成合适的温度梯度， 有利于生成氮化镓薄膜沉积在衬底 7表面，反应生成的气体由排气口 10 排出。 An air intake device 1 is arranged on the upper part of the gas phase epitaxy reaction chamber, and different types, different flow rates or flow rates, different concentrations of reaction gases or carrier gases such as hydrogen and nitrogen can be introduced according to the requirements of the epitaxial process; a quartz boat is arranged below the air intake device 1 4, the quartz boat 4 is made of a quartz tube or a ceramic tube with a mouthwash, a metal source 3 is placed in the quartz boat 4, and a hydrogen chloride reaction gas introduced into the air inlet device 1 reacts with it to form a metal chloride; The lower part of the cavity is provided with a carrier disk 6 for placing the substrate 7; below the carrier disk 6, a heating device 8 is arranged, and above the carrier disk 6, a heating device is arranged between the carrier disk 6 and the quartz boat 4 below the quartz boat 4. 5. The outer surface of the heating element of the heating device 5 has an insulating material for preventing the heating element from reacting with the gas. The heating device 5 can provide a heat source required for the reaction of the hydrogen chloride gas with the metal source, and the two heating devices can adjust the interior of the reaction chamber. The temperature gradient is distributed to meet the reaction conditions required for hydride vapor phase epitaxy in the reaction chamber; the heating device 5 is located below the quartz boat 4 and is fixed by the support 12 together with the quartz boat 4; 8 the reaction zone by a carrier sheet 11 spaced from the disc support 9; bottom of the reactor, an exhaust chamber 10, gas generated after the reaction is discharged from the exhaust port 10. Taking the epitaxial growth process of gallium nitride as an example, hydrogen chloride gas and ammonia gas are carried by the carrier gas through the air intake device 1 into the reaction chamber, and the heating device 5 is heated to about 1000 ° C, and the quartz boat is above the heating device 5 . At an appropriate distance, the quartz boat 4 can be placed in an area of about 800 degrees. The hydrogen chloride gas reacts with the metal source 3 in the quartz boat 4 to form gallium chloride gas. In the vicinity of the heating device 5, the chlorination reaction reacts with the ammonia gas to grow gallium nitride, and deposits on the surface of the substrate 7 to form a film. The heating device 8 under the loading tray 6 is heated to about 1000 ° C, so that a suitable temperature gradient is formed between the heating device 5 above the carrier disk 6 and the substrate 7, which is favorable for depositing a gallium nitride film on the surface of the substrate 7. The gas generated by the reaction is discharged from the exhaust port 10.
实施例二： Embodiment 2:
本实施例与实施例一相同， 所不同的是石英舟 4为石英管或陶瓷管 的直管或环形管， 多根管在一个平面内间隔排列的直管结构。 如图 2所 实施例三：  This embodiment is the same as the first embodiment except that the quartz boat 4 is a straight tube or a ring tube of a quartz tube or a ceramic tube, and the plurality of tubes are arranged in a straight line structure arranged in a plane. As shown in Figure 2, the third embodiment:
本实施例与 施例一相同， 所不同的是载片盘 6上方的加热装置 5 加热元件在一个平面内间隔排列的加热装置结构。 如图 3所示  This embodiment is the same as the first embodiment except that the heating means 5 above the carrier disk 6 are arranged in a planar arrangement of heating means. As shown in Figure 3

Claims

权 利 要 求 书 Claim
1.一种氢化物气相外延装置， 包括一气相外延反应腔，其特征在于反 应腔上部设有进气装置，进气装置下方设有一石英舟， 反应腔下部设有载 片盘，载片盘下方和上方设有加热装置，载片盘下方的加热装置与反应区 由载片盘支撑隔开， 反应腔底部设有排气口。  A hydride vapor phase epitaxy device comprising a vapor phase epitaxy reaction chamber, characterized in that an air inlet device is arranged on the upper part of the reaction chamber, a quartz boat is arranged under the air intake device, and a slide disk and a slide disk are arranged at the lower part of the reaction chamber. A heating device is arranged below and above, and the heating device below the slide tray is separated from the reaction zone by a slide disc, and an exhaust port is arranged at the bottom of the reaction chamber.
2.根据权利要求 1所述的氢化物气相外延装置，其中石英舟用带开口 的石英管或者陶瓷管做成。  The hydride vapor phase epitaxy apparatus according to claim 1, wherein the quartz boat is made of an open quartz tube or a ceramic tube.
3. 根据权利要求 1所述的氢化物气相外延装置， 其中石英舟用石英 管或陶瓷管的直管或环形管， 多根管在一个平面内间隔排列。  3. The hydride vapor phase epitaxy apparatus according to claim 1, wherein the quartz boat is a straight tube or a circular tube of a quartz tube or a ceramic tube, and the plurality of tubes are arranged at intervals in one plane.
4.根据权利要求 1所述的氢化物气相外延装置，其中载片盘上方的加 热装置由高温材料制造。  The hydride vapor phase epitaxy apparatus according to claim 1, wherein the heating means above the slide disk is made of a high temperature material.
5. 根据权利要求 1所述的氢化物气相外延装置， 其中载片盘上方的 加热装置的加热元件在一个平面内间隔排列。  5. The hydride vapor phase epitaxy apparatus according to claim 1, wherein the heating elements of the heating means above the slide disk are arranged at intervals in one plane.
6. 根据权利要求 1所述的氢化物气相外延装置， 其中载片盘上方的 加热装置的加热元件外表面有避免加热元件与气体反应的隔离材料。  6. The hydride vapor phase epitaxy apparatus according to claim 1, wherein the outer surface of the heating element of the heating means above the carrier disk has an insulating material that prevents the heating element from reacting with the gas.
7. 根据权利¾求1所述的氢化物气相外延装置， 其中载片盘上方的 加热装置的位置为载片盘与石英舟之间。  7. The hydride vapor phase epitaxy apparatus according to claim 3, wherein the position of the heating means above the carrier disk is between the carrier disk and the quartz boat.
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