CN1797711A - Equipment for producing substrate of nitrides in III family - Google Patents
Equipment for producing substrate of nitrides in III family Download PDFInfo
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- CN1797711A CN1797711A CNA2004100989937A CN200410098993A CN1797711A CN 1797711 A CN1797711 A CN 1797711A CN A2004100989937 A CNA2004100989937 A CN A2004100989937A CN 200410098993 A CN200410098993 A CN 200410098993A CN 1797711 A CN1797711 A CN 1797711A
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Abstract
Equipment for producing substrate of nitrides in III family is a mixed mode MOCVD-HVPE device. Metal boat carrying metal is setup in closed growth cabinet in metal organic chemical vapor deposition (MOCVD) equipment. Hydrochloric acid gas can pass the metal boat so that the equipment possesses both functions: MOCVD and gas phase extension of halide. Thus, whole growing process of gallium nitride substrate can be completed in one reaction chamber of the equipment. The method includes steps: developing crystallizing layer of nitride in 0.1-1 micro by using metal organic source and ammonia gas; then closing metal organic source; heating up metal boat with metal and filling in hedrogen cloride so as to develop substrate layer of nitride in 300 micro. Advantages are: no procedures of cooling, pausing development, and taking out etc. procedures so as to avoid issues of soiling surface of sample and restructure of surface caused by development for multiple tomes.
Description
Technical field
The present invention relates to semiconductor equipment manufacturing and technical field of semiconductor, particularly relate to the growth apparatus of III group-III nitride substrate.
Background technology
Gallium nitride (the related compound of nitrogen gallium: aluminium nitride, indium nitride, aluminum gallium nitride, indium gallium nitride, indium nitride aluminium, Im-Ga-Al nitride etc., down with) be third generation semi-conducting material continue silicon and GaAs (containing indium phosphide) after, be the making blue light---the excellent material of luminescent device (light-emitting diode and laser diode), detector and the high temperature of ultraviolet light wave band, high frequency, high-power electronic device.By the gallium nitride laser diode is " Blu-ray Disc " of core, and individual single-sided discs memory capacity reaches more than the 14G, is four times of present DVD density, and it must be the indispensable opto-electronic device of earlier 2000s information stores.With the gallium nitride material is the high light large power light-emitting diode of core, and in 100,000 hours life-spans, theoretical luminous efficiency can reach more than 50%, is lighting source of future generation behind incandescent lamp and fluorescent lamp, will cause an illumination revolution.
Nineteen sixties has just begun the research of gallium nitride, but owing to preparation p section bar material difficulty was once once made slow progress.Up to the nineties, magnesium addition and annealing acquisition p section bar material are mixed in discovery in gallium nitride after, gallium nitride material and device development are rapid.Gallium nitride blueness and green LED have been widely used in fields such as traffic lights, outdoor large screen, background illumination, building decoration at present, and Ri Ya company announces that in 1998 gallium nitride purple light lifetime of LD has reached 10000 hours.Hereafter, gallium nitride illumination device progress sinks into to pause once more: gallium nitride lifetime of LD (the about one-year age that still has only 10000 hours on the one hand, can be practical reluctantly), further do not break through later on from 1998, even Ri Ya company advanced in the world also is difficult to continue to break through; The electro-optical efficiency of gallium nitride light-emitting diode roughly about 5% (the Individual testwas chamber can reach 25%) on the other hand, though the output of light-emitting diode is improving constantly, price is in continuous decline, further improves but unusual difficulty of electro-optical efficiency.The basic reason that causes the gallium nitride illumination device progress to pause once more is to lack the gallium nitride substrate! Owing to there is not the gallium nitride substrate, gallium nitride device can only carry out on big mismatch foreign substrate (as sapphire, silicon etc.), causes the gallium nitride epitaxial materials crystalline quality poor, dislocation density height (～10
8Cm
-2) etc. shortcoming, this has seriously hindered the development of gallium nitride device.Theoretical and experiment shows all no matter homoepitaxial gallium-nitride material and device on the gallium nitride substrate are opto-electronic device or microelectronic component, and its performance surpasses far all that heteroepitaxy obtains on Sapphire Substrate.
(Metal-Organic Chemical VaporDeposition MOCVD) has become the nucleus equipment of photoelectron materials such as preparation GaAs, indium phosphide to metal organic chemical vapor deposition.Especially the main stream approach for preparing gallium nitride light-emitting diode and laser diode from the performance of present growing gallium nitride device, does not also have other method can be by comparison.Halide vapour phase epitaxy (Halogen Vapor Phase Epitaxy, HVPE), it is the main flow epitaxy method of the seventies in last century six, because its growth rate is too fast, can reach the 20-300 micron/hour, can not the grown quantum trap, layer material such as superlattice, replaced (world's main flow was heterojunction materials such as research quantum well, superlattice at that time) successively by metal organic chemical vapor deposition (MOCVD) in the eighties.Yet, fast just because of halide vapour phase epitaxy (HVPE) growth rate, can produce the gallium nitride substrate, come into one's own this century again, is the main stream approach for preparing the gallium nitride substrate at present.Compare with the high pressure czochralski method, halide vapour phase epitaxy (HVPE) but method more is expected to produce the gallium nitride substrate of practicability.
Though halide vapour phase epitaxy (HVPE) growth rate is very fast, can the growing gallium nitride substrate, metal organic chemical vapor deposition (MOCVD) is indispensable.Directly do not use halide vapour phase epitaxy (HVPE) growth if there is metal organic chemical vapor deposition (MOCVD) on sapphire or silicon substrate, to grow skim " Seed Layer " earlier, the crystalline quality of the gallium nitride that grows out so is very poor, is polycrystalline material basically.This conclusion last century six the seventies just obtained proof.Certainly, it also is unpractical only using metal organic chemical vapor deposition (MOCVD) growing gallium nitride substrate, because metal organic chemical vapor deposition (MOCVD) growth rate too slow (per hour about 1 micron), gallium nitride substrate needs hundreds of hours of one 300 microns of grow! This shows that for the growing gallium nitride substrate, both are indispensable for metal organic chemical vapor deposition (MOCVD) and halide vapour phase epitaxy (HVPE).
Research gallium nitride substrate separately carries out with metal organic chemical vapor deposition (MOCVD) and two equipment of halide vapour phase epitaxy (HVPE) both at home and abroad at present.Promptly, use the about 300 microns gallium nitride substrate layer of halide vapour phase epitaxy (HVPE) growth again, at last with former substrate desquamation, polishing etc. earlier with the crystallizing layer of 0.1～1 micron of metal organic chemical vapor deposition (MOCVD) growth.Because substrate of growth need be grown in two reative cells at twice, need processes such as cooling, growth pause, taking-up, so inevitably following problem can appear: (1) sample surfaces pickup; (2) growth pauses, lowers the temperature and cause surface structure again, and influence is secondary growth down.
Summary of the invention
The purpose of this invention is to provide a kind of III group-III nitride substrate specific complex type MOCVD-HVPE growth apparatus, need in two reative cells, grow at twice to overcome substrate of growth, need the process of pause, taking-up of lowering the temperature, grow in the growth, but being grown in the reative cell of a substrate once finished.
For achieving the above object, technology solution of the present invention provides a kind of production equipment of III group-III nitride substrate, main body is a metal organic chemical vapor deposition (MOCVD) equipment, ammonia inlet, metal organic source (MO) inlet and sample tap are arranged in the side of closed growth chamber, the graphite platform is arranged in the growth room, substrate places on the graphite platform, the rotating shaft that the graphite platform is stretched out by its central vertical supports, rotating shaft is connected with power section, under power drives, rotating shaft and graphite platform rotate synchronously, and graphite platform surrounding is provided with heating arrangements; It also is provided with metal boat in closed growth chamber, metal is housed in the metal boat, has halide vapour phase epitaxy function, makes equipment have metal organic chemical vapor deposition and the double-deck function of halide vapour phase epitaxy simultaneously.
Described production equipment, its described metal boat, at least one is for what seal, being generally quartz makes, the interior metal liquid of containing is located at growth room's internal upper part, and its end face has one or more gas accesses, the inboard, gas access is connected with vertical quartz ampoule, the quartz ampoule outer end communicates with one or more hydrogen chloride gas gas circuit of outside, growth room respectively, and quartz ampoule bottom and metal boat bottom surface inwall have a gap, can make hydrogen chloride gas feed metal boat by the quartz ampoule bottom of gas access; The metal boat bottom surface is provided with at least one venthole, and the venthole inboard is connected with vertical quartz ampoule, and quartz ampoule is inner to have a gap with metal boat end face inwall, and the outside, metal boat bottom surface is provided with heating arrangements; Metal reacts and generates metal halide gas and reach substrate by venthole in hydrogen chloride gas and the metal boat, and this promptly is a halide vapour phase epitaxy part.
Described production equipment, its described metal boat, at least one, for what seal, be located at bottom in the growth room, there are one or more gas accesses its side, the inboard affixed quartz ampoule bending in gas access is downward, the quartz ampoule outer end communicates with one or more hydrogen chloride gas gas circuit of outside, growth room respectively, and quartz ampoule bottom and metal boat bottom surface inwall have a gap, can make hydrogen chloride gas feed metal boat by the quartz ampoule bottom of gas access; The metal boat end face is provided with at least one venthole, or is connected with vertical pipeline outside the venthole, and pipeline is that metal boat leads to the inboard passage of metal organic source (MO) inlet, and the outside, metal boat bottom surface or surrounding, bottom are provided with heating arrangements; Metal reacts and generates metal halide gas and reach substrate by venthole in hydrogen chloride gas and the metal boat, and this promptly is a halide vapour phase epitaxy part.
Described production equipment, the graphite platform in its described growth room places the bottom surface or the end face of growth room, and substrate face is placed on the graphite platform up, or face down is placed on the graphite platform.
Described production equipment, its described metal organic source (MO) enters the mouth, and is located at the left side of growth room, or the inboard affixed tubule that is horizontally placed in the growth room of metal organic source (MO) inlet, and a plurality of fumaroles are arranged on the tubule, and this fumarole is towards substrate.
Described production equipment, its described ammonia enters the mouth, and is located at left side or the upside or the downside of growth room, an ammonia inlet or an affixed air jet pipe, air jet pipe vertically passes the metal boat that metal is housed, and the outlet of air jet pipe lower end is fixed in metal boat bottom surface or end face.
Described production equipment, its described substrate is sapphire, silicon or other semi-conducting material, glass, pottery etc.
Described production equipment, its described metal organic source (MO) be in trimethyl gallium, trimethyl aluminium, the trimethyl indium any one or multiple.
Described production equipment, its described gas source be in ammonia, silane, the germane any one or multiple.
Described production equipment, the metal in its described metal boat, in gallium, metallic aluminium, the indium metal any one or multiple.
Described production equipment, its described heater is high frequency induction heater, light heater or resistance heater.
Described production equipment, its growth technique is as follows: earlier with grow on substrate 0.1～1 micron III group-III nitride crystallizing layer of metal organic source (MO) and ammonia; Close metal organic source (MO) then, the metal boat that metal will be housed simultaneously heats up and the feeding hydrogen chloride gas, with the III group-III nitride substrate layer of≤300 microns of halide vapour phase epitaxy method growths; Take out from sample tap at last, with substrate desquamation.
The present invention has the following advantages:
This equipment has metal organic chemical vapor deposition (MOCVD) and halide vapour phase epitaxy (HVPE) function simultaneously, can slow growth III group-III nitride " Seed Layer ", and the III group-III nitride substrate of growing fast again.Separately carry out with metal organic chemical vapor deposition (MOCVD) and two equipment of halide vapour phase epitaxy (HVPE) with respect to domestic and international production III group-III nitride substrate, the present invention's substrate of growing only need carry out in a reative cell, do not lower the temperature, processes such as growth pauses, taking-up, avoided fully because the sample surfaces pickup that causes and the surface problem such as structure again of repeatedly growing.
Description of drawings
Fig. 1 is the production equipment structural representation of a kind of III group-III nitride of the present invention substrate;
Fig. 2 is the first embodiment of the invention schematic diagram;
Fig. 3 is the second embodiment of the invention schematic diagram;
Fig. 4 is the third embodiment of the invention schematic diagram;
Fig. 5 is the fourth embodiment of the invention schematic diagram.
Embodiment
The present invention's said " III group-III nitride " refers to the compound that III family element and elemental nitrogen form in the periodic table of elements, comprises gallium nitride, aluminium nitride, indium nitride, indium gallium nitride, aluminum gallium nitride, indium nitride aluminium, Im-Ga-Al nitride etc.Though boron also is III family element, owing to boron nitride is an indirect bandgap material, in photoelectronic industry, use to be restricted, generally speaking, " III group-III nitride " do not comprise boron nitride.
Said " gallium nitride and related compound ", its meaning is similar with " III group-III nitride ", repeats no more.
The present invention proposes a kind of III group-III nitride substrate specific complex type MOCVD-HVPE growth apparatus.Referring to Fig. 1, on this equipment body a metal organic chemical vapor deposition (MOCVD) equipment, ammonia inlet 1 and metal organic source (MO) inlet 2 are arranged in the left side of closed growth chamber 8, ammonia inlet 1 communicates with ammonia gas circuit (not shown), and metal organic source (MO) enters the mouth and 2 communicates with metal organic source (MO) gas circuit (not shown).The right side of growth room 8 is a sample tap 7.The bottom surface of growth room 8 is a graphite platform 9, substrate 6 can be flat on the graphite platform 9, and the rotating shaft 11 that graphite platform 9 is vertically stretched out by its bottom center supports, and rotating shaft 11 is connected with the power section (not shown), under power drove, rotating shaft 11 and graphite platform 9 rotated synchronously.Graphite platform 9 surroundings are provided with heating arrangements 10.
In addition, 8 tops increase a metal boat 3 in the growth room, being generally quartz makes, the interior metal liquid of containing, metal boat 3 is for what seal, and its end face has one or more gas accesses 4,4 inboards, gas access are connected with vertical quartz ampoule 32, quartz ampoule 32 outer ends communicate with one or more hydrogen chloride gas gas circuit (not shown) of 8 outsides, growth room respectively, and quartz ampoule 32 bottoms and metal boat 3 bottom surface inwalls have a gap, can make hydrogen chloride gas feed metal boat 3 by quartz ampoule 32 bottoms of gas access 4.Metal boat 3 bottom surfaces are provided with venthole 5, and venthole 5 inboards are connected with vertical quartz ampoule 33, and quartz ampoule 33 upper ends and metal boat 3 end face inwalls have a gap.The outside, metal boat 3 bottom surfaces is provided with heating arrangements 12.Metals react and generate metal halide and reach substrate 6 by venthole 5 in hydrogen chloride gas and the metal boat 3, and this is actually halide vapour phase epitaxy (HVPE) part.Therefore this equipment has metal organic chemical vapor deposition (MOCVD) and the double-deck function of halide vapour phase epitaxy (HVPE) simultaneously.
In apparatus of the present invention, metal organic source (MO) can be in trimethyl gallium, trimethyl aluminium, the trimethyl indium etc. any one or multiple.
But metal boat 3 splendid attire galliums, aluminium or indium etc.Fill gallium in " metal boat 3 " of splendid attire metal, be called " gallium boat ", also can contain metallic aluminium or indium, be called " aluminium boat ", " indium boat " etc.
Growth technique with this equipment growth III group-III nitride substrate is as follows: on foreign substrate such as sapphire 6, earlier with metal organic source (MO) and ammonia (being the MOCVD method) growth III group-III nitride crystallizing layer; Close metal organic source (MO) then, simultaneously gallium (or other metal such as aluminium, indium) boat 3 is heated up and feed hydrogen chloride gas, grow III group-III nitride substrate layer about 300 microns with halide vapour phase epitaxy (HVPE) method; Take out from sample tap 7 at last, Sapphire Substrate 6 is peeled off etc.
Application example:
In order to further specify the feature of this patent, this patent is described further below in conjunction with drawings and Examples.
Fig. 2 is the schematic diagram of first embodiment.Metal organic source (MO) enters the mouth 2 by a tubule 22 that is horizontally placed in the growth room 8 by growth room's 8 left side metal organic sources (MO), being generally quartz makes, several fumaroles 21 are arranged on tubule 22, (MO) sprays to substrate 6 with metal organic source, and substrate 6 is placed on the graphite platform 9 of rotation.Ammonia inlet 1 is located at growth room's 8 end faces, and ammonia sprays to substrate 6 through ammonia inlet 1 by the outlet of air jet pipe 101 lower ends.Air jet pipe 101 vertically passes the metal boat 3 that gallium is housed, and the outlet of air jet pipe 101 lower ends is fixed in metal boat 3 bottom surfaces.Hydrogen chloride (HCl) gas feeds the metal boat 3 (be generally quartz and make, interior Sheng metal liquid) that gallium is housed by the quartz ampoule 32 of gas access 4, and hydrogen chloride (HCl) and gallium (Ga) reaction generate GaCl
3Gas, GaCl
3Gas sprays to substrate 6 by the quartz ampoule 33 of venthole 5, and present embodiment has the quartz ampoule 33 of two ventholes 5.Heater 12 heating in the outside, metal boat 3 usefulness bottom surfaces and the temperature of control metal boat 3, heater 10 heating and the control growing temperature of substrate 6 usefulness graphite platforms 9 surroundings.
This device is in the growth room 8 of equipment, and the puff prot 21 of existing metal organic source (MO) has the venthole 5 of gallium boat 3 and hydrogen chloride (HCl) gas again; The function of existing metal organic chemical vapor deposition (MOCVD) (with ammonia and MO source growth III group nitride material) has halide vapour phase epitaxy (HVPE) function (to feed the gallium boat with hydrogen chloride (HCl) and produce into GaCl again
3Gas, GaCl
3Gas and ammonia growing gallium nitride).
Fig. 3 is the schematic diagram of second embodiment.Contrast Fig. 2, the main distinction of Fig. 3 is that substrate 6 is to be inverted on the graphite platform 9, be that substrate 6 stands upside down in the growth room 8 " ceiling " that graphite platform 9 constitutes, and metal boat 3 (being generally quartz makes, the interior metal liquid of containing) is located at bottoms in the growth room 8, there are one or more gas accesses 4 its side, and gas access 4 inboard affixed quartz ampoule 32 bendings are downward, and quartz ampoule 32 outer ends communicate with one or more hydrogen chloride gas gas circuit (not shown) of 8 outsides, growth room respectively.Metal boat 3 end faces are provided with a plurality of ventholes 5.Ammonia inlet 1 is located at 8 bottom surfaces, growth room, and ammonia sprays to substrate 6 through ammonia inlet 1 by the outlet of air jet pipe 101 upper ends.Air jet pipe 101 vertically passes the metal boat 3 that gallium is housed, and the outlet of air jet pipe 101 upper ends is fixed in metal boat 3 end faces.Metal organic source (MO), ammonia all are to spray to substrate 6, the GaCl that hydrogen chloride (HCl) and gallium (Ga) reaction generate from the bottom up
3Gas also is from up spraying to substrate 6 through venthole 5 down.This structure helps reducing dust deposit on substrate 6.
This device is that with the main distinction of Fig. 2 device the position and the direction of substrate placement are different, but basic structure is identical: promptly in the growth room 8 of equipment, the puff prot 21 of existing metal organic source (MO) has the venthole 5 of gallium boat 3 and hydrogen chloride (HCl) gas again; The function of existing metal organic chemical vapor deposition (MOCVD) (with ammonia and MO source growth III group nitride material) has halide vapour phase epitaxy (HVPE) function (to feed the metal boat 3 that gallium is housed with hydrogen chloride (HCl) and produce GaCl again
3Gas, GaCl
3Gas and ammonia growing gallium nitride).
Fig. 4 is the schematic diagram of the 3rd embodiment.Contrast Fig. 2 and Fig. 4, the two the main distinction is: Fig. 2 is vertical ventilation, metal organic source (MO), ammonia and the GaCl that is produced by hydrogen chloride (HCl) and gallium (Ga)
3Gas all is to blow to substrate 6 from top to bottom; Fig. 4 is a level ventilation, and metal boat 3 and graphite platform 9 all place the bottom surface of growth room 8, and metal boat 3 is in graphite platform 9 left sides.Metal boat 3 left surfaces have one or more gas accesses 4, and gas access 4 inboard affixed quartz ampoule 32 bendings are downward.Metal organic source (MO), ammonia and the GaCl that produces by hydrogen chloride (HCl) and gallium (Ga)
3Gas all is to blow to substrate 6 from left to right.Wherein, the heater 12 of metal boat 3 is located at the surrounding of metal boat 3 bottoms.And venthole 5 outsides of metal boat 3 are connected with pipeline 51, and pipeline 51 is GaCl
3Gas leads to the passage of metal organic source (MO) inlet 2 from the metal boat 3 that gallium is housed, and this pipeline 51 does not hinder ammonia by ammonia inlet 1 input from left to right.
This device and the main distinction of Fig. 2 device direction that is to ventilate is different, but basic structure is identical: promptly in the growth room 8 of equipment, existing metal organic source (MO) inlet 2 has the venthole 5 and the pipeline 51 of metal boat 3 and hydrogen chloride (HCl) gas again; The function of existing metal organic chemical vapor deposition (MOCVD) (with ammonia and MO source growth III group nitride material) has halide vapour phase epitaxy (HVPE) function (to feed the metal boat 3 that gallium is housed with hydrogen chloride (HCl) and produce GaCl again
3Gas, GaCl
3Gas and ammonia growing gallium nitride).
Fig. 5 is the schematic diagram of the 4th embodiment.Contrast Fig. 2 and Fig. 5, the two the main distinction is: Fig. 2 is a gallium boat 3 and one road hydrogen chloride (HCl) gas; Fig. 5 be gallium boat 3 in two, be divided into two zones (perhaps being referred to as two gallium boats 3), each each one road hydrogen chloride (HCl) gas of zone promptly has the quartz ampoule 32 of two gas accesses 4 and the quartz ampoule 33 of two ventholes 5.Attention: any one can change aluminium boat, indium boat or other metal boats in two gallium boats 3 among Fig. 5.
This device and the main distinction of Fig. 2 device are that the number of gallium boat 3 is different, but basic structure is identical: promptly in the growth room 8 of equipment, the puff prot 21 of existing metal organic source (MO) has the puff prot of gallium boat and hydrogen chloride (HCl) gas again; The function of existing metal organic chemical vapor deposition (MOCVD) (with ammonia and MO source growth III group nitride material) has halide vapour phase epitaxy (HVPE) function (to feed the metal boat 3 that gallium is housed with hydrogen chloride (HCl) and produce GaCl again
3Gas, GaCl
3Gas and ammonia growing gallium nitride).
In first, second, third and fourth above-mentioned embodiment, this device in, metal organic source (MO) can be in trimethyl gallium, trimethyl aluminium, the trimethyl indium etc. any one or multiple.
In this device, the heater 10 of graphite platform 9 and the heater 12 of metal boat 3 can be high frequency induction heater, light heater or resistance heater etc.
Claims (10)
1, a kind of production equipment of III group-III nitride substrate, main body is a metal organic chemical vapor deposition equipment, ammonia inlet, metal organic source inlet and sample tap are arranged in the side of closed growth chamber, the graphite platform is arranged in the growth room, and substrate places on the graphite platform, and the rotating shaft that the graphite platform is stretched out by its central vertical supports, rotating shaft is connected with power section, under power drove, rotating shaft and graphite platform rotated synchronously, and graphite platform surrounding is provided with heating arrangements; It is characterized in that: in closed growth chamber, also be provided with metal boat, metal is housed in the metal boat, have halide vapour phase epitaxy function, make equipment have metal organic chemical vapor deposition and the double-deck function of halide vapour phase epitaxy simultaneously.
2, production equipment as claimed in claim 1, it is characterized in that: described metal boat, at least one, for what seal, be located at growth room's internal upper part, its end face has one or more gas accesses, the inboard, gas access is connected with vertical quartz ampoule, the quartz ampoule outer end communicates with one or more hydrogen chloride gas gas circuit of outside, growth room respectively, and quartz ampoule bottom and metal boat bottom surface inwall have a gap, can make hydrogen chloride gas feed metal boat by the quartz ampoule bottom of gas access; The metal boat bottom surface is provided with at least one venthole, and the venthole inboard is connected with vertical quartz ampoule, and quartz ampoule is inner to have a gap with metal boat end face inwall, and the outside, metal boat bottom surface is provided with heating arrangements; Metal reacts and generates metal halide gas and reach substrate by venthole in hydrogen chloride gas and the metal boat, and this promptly is a halide vapour phase epitaxy part.
3, production equipment as claimed in claim 1, it is characterized in that: described metal boat, at least one, for what seal, be located at bottom in the growth room, there are one or more gas accesses its side, the inboard affixed quartz ampoule bending in gas access is downward, the quartz ampoule outer end communicates with one or more hydrogen chloride gas gas circuit of outside, growth room respectively, and quartz ampoule bottom and metal boat bottom surface inwall have a gap, can make hydrogen chloride gas feed metal boat by the quartz ampoule bottom of gas access; The metal boat end face is provided with at least one venthole, or is connected with vertical pipeline outside the venthole, and pipeline is that metal boat leads to the inboard passage of metal organic source inlet, and the outside, metal boat bottom surface or surrounding, bottom are provided with heating arrangements; Metal reacts and generates metal halide gas and reach substrate by venthole in hydrogen chloride gas and the metal boat, and this promptly is a halide vapour phase epitaxy part.
4, production equipment as claimed in claim 1 is characterized in that: the graphite platform in the described growth room, place the bottom surface or the end face of growth room, and substrate face is placed on the graphite platform up, or face down is placed on the graphite platform.
5, production equipment as claimed in claim 1, it is characterized in that: described metal organic source enters the mouth, and is located at the left side of growth room, or the inboard affixed tubule that is horizontally placed in the growth room of metal organic source inlet, a plurality of fumaroles are arranged on the tubule, and this fumarole is towards substrate.
6, production equipment as claimed in claim 1, it is characterized in that: described ammonia enters the mouth, and is located at left side or the upside or the downside of growth room, an ammonia inlet or an affixed air jet pipe, air jet pipe vertically passes the metal boat that metal is housed, and the outlet of air jet pipe lower end is fixed in metal boat bottom surface or end face.
7, production equipment as claimed in claim 1 is characterized in that: described substrate is sapphire, silicon or other semi-conducting material, glass, pottery.
8, production equipment as claimed in claim 1 is characterized in that: described metal organic source be in trimethyl gallium, trimethyl aluminium, the trimethyl indium any one or multiple; Gas source be in ammonia, silane, the germane any one or multiple; Metal in the metal boat, in gallium, metallic aluminium, the indium metal any one or multiple.
9, production equipment as claimed in claim 1 is characterized in that: described heater is high frequency induction heater, light heater or resistance heater.
10, as the described production equipment of claim 1～9, it is characterized in that: growth technique is as follows: grow O.1 on substrate～1 micron III group-III nitride crystallizing layer with metal organic source and ammonia earlier; Close metal organic source then, the metal boat that metal will be housed simultaneously heats up and the feeding hydrogen chloride gas, with the III group-III nitride substrate layer of≤300 microns of halide vapour phase epitaxy method growths; Take out from sample tap at last, with substrate desquamation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2004100989937A CN1797711A (en) | 2004-12-23 | 2004-12-23 | Equipment for producing substrate of nitrides in III family |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2004100989937A CN1797711A (en) | 2004-12-23 | 2004-12-23 | Equipment for producing substrate of nitrides in III family |
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| CN1797711A true CN1797711A (en) | 2006-07-05 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102465337A (en) * | 2010-11-18 | 2012-05-23 | 南京大学 | Multi-piece multi-source horizontal hydride vapor phase epitaxy growth system |
| CN102828251A (en) * | 2012-09-10 | 2012-12-19 | 中国科学院半导体研究所 | Method for preparing aluminum nitride single crystal material |
| CN103132140A (en) * | 2011-11-23 | 2013-06-05 | 甘志银 | Hydride vapor phase epitaxy device |
| CN113053731A (en) * | 2021-03-05 | 2021-06-29 | 中国科学院苏州纳米技术与纳米仿生研究所 | Method for manufacturing gallium metal film and method for protecting gallium nitride substrate |
-
2004
- 2004-12-23 CN CNA2004100989937A patent/CN1797711A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102465337A (en) * | 2010-11-18 | 2012-05-23 | 南京大学 | Multi-piece multi-source horizontal hydride vapor phase epitaxy growth system |
| CN102465337B (en) * | 2010-11-18 | 2014-07-16 | 南京大学 | Multi-piece multi-source horizontal hydride vapor phase epitaxy growth system |
| CN103132140A (en) * | 2011-11-23 | 2013-06-05 | 甘志银 | Hydride vapor phase epitaxy device |
| CN102828251A (en) * | 2012-09-10 | 2012-12-19 | 中国科学院半导体研究所 | Method for preparing aluminum nitride single crystal material |
| CN102828251B (en) * | 2012-09-10 | 2015-02-18 | 中国科学院半导体研究所 | Method for preparing aluminum nitride single crystal material |
| CN113053731A (en) * | 2021-03-05 | 2021-06-29 | 中国科学院苏州纳米技术与纳米仿生研究所 | Method for manufacturing gallium metal film and method for protecting gallium nitride substrate |
| CN113053731B (en) * | 2021-03-05 | 2024-05-17 | 中国科学院苏州纳米技术与纳米仿生研究所 | Gallium metal film manufacturing method and gallium nitride substrate protection method |
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