CN103119721B - 彩色图像采样和重建 - Google Patents

彩色图像采样和重建 Download PDF

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Publication number
CN103119721B
CN103119721B CN201180045690.7A CN201180045690A CN103119721B CN 103119721 B CN103119721 B CN 103119721B CN 201180045690 A CN201180045690 A CN 201180045690A CN 103119721 B CN103119721 B CN 103119721B
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China
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signal
image
magenta
pixel
photodiode
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CN201180045690.7A
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CN103119721A (zh
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郑苍隆
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T3/00—Geometric image transformations in the plane of the image
    • G06T3/40—Scaling of whole images or parts thereof, e.g. expanding or contracting
    • G06T3/4015—Image demosaicing, e.g. colour filter arrays [CFA] or Bayer patterns
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/80—Camera processing pipelines; Components thereof
    • H04N23/84—Camera processing pipelines; Components thereof for processing colour signals
    • H04N23/843—Demosaicing, e.g. interpolating colour pixel values
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/134—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on three different wavelength filter elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/17—Colour separation based on photon absorption depth, e.g. full colour resolution obtained simultaneously at each pixel location
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H10F39/1825—Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N2209/00—Details of colour television systems
    • H04N2209/04—Picture signal generators
    • H04N2209/041—Picture signal generators using solid-state devices
    • H04N2209/042—Picture signal generators using solid-state devices having a single pick-up sensor
    • H04N2209/047—Picture signal generators using solid-state devices having a single pick-up sensor using multispectral pick-up elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Color Television Image Signal Generators (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN201180045690.7A 2010-09-26 2011-09-25 彩色图像采样和重建 Expired - Fee Related CN103119721B (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US38653310P 2010-09-26 2010-09-26
US61/386,533 2010-09-26
US39206910P 2010-10-12 2010-10-12
US61/392,069 2010-10-12
US13/244,336 US8866945B2 (en) 2010-09-26 2011-09-24 Color image sampling and reconstruction
US13/244,336 2011-09-24
PCT/IB2011/054213 WO2012038939A2 (en) 2010-09-26 2011-09-25 Color image sampling and reconstruction

Publications (2)

Publication Number Publication Date
CN103119721A CN103119721A (zh) 2013-05-22
CN103119721B true CN103119721B (zh) 2015-12-16

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CN201180045690.7A Expired - Fee Related CN103119721B (zh) 2010-09-26 2011-09-25 彩色图像采样和重建

Country Status (9)

Country Link
US (2) US8866945B2 (enExample)
JP (1) JP5971530B2 (enExample)
CN (1) CN103119721B (enExample)
AU (1) AU2011306393A1 (enExample)
BR (1) BR112013007032A2 (enExample)
DE (1) DE112011103229T5 (enExample)
GB (2) GB2518561B (enExample)
SG (1) SG188640A1 (enExample)
WO (1) WO2012038939A2 (enExample)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8866945B2 (en) 2010-09-26 2014-10-21 Hiok Nam Tay Color image sampling and reconstruction
US9631964B2 (en) 2011-03-11 2017-04-25 Intelligent Agricultural Solutions, Llc Acoustic material flow sensor
US9629308B2 (en) 2011-03-11 2017-04-25 Intelligent Agricultural Solutions, Llc Harvesting machine capable of automatic adjustment
US10318138B2 (en) 2011-03-11 2019-06-11 Intelligent Agricultural Solutions Llc Harvesting machine capable of automatic adjustment
US10321624B2 (en) 2011-03-11 2019-06-18 Intelligent Agriculture Solutions LLC Air seeder manifold system
US20130300902A1 (en) * 2012-03-29 2013-11-14 Hiok Nam Tay Color image sensor pixel array
CN103067708B (zh) * 2012-12-25 2015-06-17 太原理工大学 基于w-z结构的贝尔模板数字图像编解码方法
TWI617198B (zh) * 2013-03-15 2018-03-01 開曼群島商普廷數碼影像控股公司 具有透明濾波器像素之成像系統
CN105531823B (zh) * 2013-08-03 2018-06-12 拉莫特艾特特拉维夫大学有限公司 利用单色数字摄影机的彩色成像
US9337223B2 (en) * 2013-11-25 2016-05-10 Semiconductor Components Industriess, Llc Imaging systems with image pixels having adjustable responsivity
CN104934491B (zh) * 2014-03-19 2017-06-06 中芯国际集成电路制造(上海)有限公司 光电二极管、其制作方法及图像传感器件
US9756785B2 (en) 2014-09-12 2017-09-12 Appareo Systems, Llc Grain quality sensor
US10085379B2 (en) 2014-09-12 2018-10-02 Appareo Systems, Llc Grain quality sensor
CN104241311B (zh) * 2014-10-14 2017-02-15 中国电子科技集团公司第四十四研究所 可用于多种工作模式的cmos图像传感器
CN107431953B (zh) * 2015-03-10 2020-12-15 华为技术有限公司 业务流分流的方法和装置
US9793306B2 (en) * 2015-04-08 2017-10-17 Semiconductor Components Industries, Llc Imaging systems with stacked photodiodes and chroma-luma de-noising
US10321496B2 (en) * 2015-06-03 2019-06-11 Parallel Wireless, Inc. Inter-PGW handover architecture
WO2017090366A1 (ja) 2015-11-25 2017-06-01 オリンパス株式会社 内視鏡システムおよび撮影方法
US10690495B2 (en) * 2016-03-14 2020-06-23 Canon Kabushiki Kaisha Ranging apparatus and moving object capable of high-accuracy ranging
US11393867B2 (en) * 2017-12-06 2022-07-19 Facebook Technologies, Llc Multi-photodiode pixel cell
US11233085B2 (en) 2018-05-09 2022-01-25 Facebook Technologies, Llc Multi-photo pixel cell having vertical gate structure
US11463636B2 (en) 2018-06-27 2022-10-04 Facebook Technologies, Llc Pixel sensor having multiple photodiodes
US10931884B2 (en) 2018-08-20 2021-02-23 Facebook Technologies, Llc Pixel sensor having adaptive exposure time
US11956413B2 (en) 2018-08-27 2024-04-09 Meta Platforms Technologies, Llc Pixel sensor having multiple photodiodes and shared comparator
US11595602B2 (en) 2018-11-05 2023-02-28 Meta Platforms Technologies, Llc Image sensor post processing
CN109598686B (zh) * 2018-11-28 2020-07-10 珠海欧比特宇航科技股份有限公司 一种基于bayer模板的卫星影像重建方法
US11218660B1 (en) 2019-03-26 2022-01-04 Facebook Technologies, Llc Pixel sensor having shared readout structure
KR102713585B1 (ko) 2020-06-30 2024-10-07 삼성전자주식회사 이미지 센서를 포함하는 전자 장치
US11910114B2 (en) 2020-07-17 2024-02-20 Meta Platforms Technologies, Llc Multi-mode image sensor
CN112490258B (zh) * 2020-12-25 2022-09-16 联合微电子中心有限责任公司 彩色cmos图像传感器像素阵列、传感器以及制备工艺
CN114125240A (zh) * 2021-11-30 2022-03-01 维沃移动通信有限公司 图像传感器、摄像模组、电子设备及拍摄方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4437112A (en) * 1980-02-15 1984-03-13 Canon Kabushiki Kaisha Solid-state color imaging apparatus
CN1398108A (zh) * 2001-07-18 2003-02-19 三洋电机株式会社 画像信号处理装置
US20030189237A1 (en) * 2002-04-05 2003-10-09 Toru Koizumi Photoelectric conversion element and solid-state image sensing device, camera, and image input apparatus using the same
US20040051798A1 (en) * 2002-09-18 2004-03-18 Ramakrishna Kakarala Method for detecting and correcting defective pixels in a digital image sensor
US20040178478A1 (en) * 2003-03-11 2004-09-16 Makoto Shizukuishi Color solid-state image pickup device

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56115085A (en) * 1980-02-15 1981-09-10 Canon Inc Color solid state pickup device
US6482669B1 (en) * 2001-05-30 2002-11-19 Taiwan Semiconductor Manufacturing Company Colors only process to reduce package yield loss
US6534759B1 (en) 2001-09-10 2003-03-18 National Semiconductor Corporation Vertical photodetector with improved photocarrier separation and low capacitance
US7233350B2 (en) 2002-01-05 2007-06-19 Candela Microsystems, Inc. Image sensor with interleaved image output
JP4404561B2 (ja) * 2003-03-17 2010-01-27 富士フイルム株式会社 Ｍｏｓ型カラー固体撮像装置
US7929798B2 (en) * 2005-12-07 2011-04-19 Micron Technology, Inc. Method and apparatus providing noise reduction while preserving edges for imagers
US7419844B2 (en) * 2006-03-17 2008-09-02 Sharp Laboratories Of America, Inc. Real-time CMOS imager having stacked photodiodes fabricated on SOI wafer
JP2008072098A (ja) * 2006-08-17 2008-03-27 Sony Corp 半導体イメージセンサ
CN101459184B (zh) 2007-12-13 2011-03-23 中芯国际集成电路制造(上海)有限公司 在cmos上感测图像的系统和方法
US20090160981A1 (en) 2007-12-20 2009-06-25 Micron Technology, Inc. Apparatus including green and magenta pixels and method thereof
US8106426B2 (en) 2008-02-04 2012-01-31 Sharp Laboratories Of America, Inc. Full color CMOS imager filter
JP5320989B2 (ja) * 2008-11-07 2013-10-23 ソニー株式会社 固体撮像装置、及び電子機器
US8274587B2 (en) * 2010-04-13 2012-09-25 Aptina Imaging Corporation Image sensor pixels with vertical charge transfer
US8866945B2 (en) 2010-09-26 2014-10-21 Hiok Nam Tay Color image sampling and reconstruction

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4437112A (en) * 1980-02-15 1984-03-13 Canon Kabushiki Kaisha Solid-state color imaging apparatus
CN1398108A (zh) * 2001-07-18 2003-02-19 三洋电机株式会社 画像信号处理装置
US20030189237A1 (en) * 2002-04-05 2003-10-09 Toru Koizumi Photoelectric conversion element and solid-state image sensing device, camera, and image input apparatus using the same
US20040051798A1 (en) * 2002-09-18 2004-03-18 Ramakrishna Kakarala Method for detecting and correcting defective pixels in a digital image sensor
US20040178478A1 (en) * 2003-03-11 2004-09-16 Makoto Shizukuishi Color solid-state image pickup device

Also Published As

Publication number Publication date
GB201304979D0 (en) 2013-05-01
WO2012038939A3 (en) 2012-06-14
CN103119721A (zh) 2013-05-22
GB2503308B (en) 2015-03-11
JP5971530B2 (ja) 2016-08-17
AU2011306393A1 (en) 2013-04-11
WO2012038939A2 (en) 2012-03-29
BR112013007032A2 (pt) 2019-09-24
HK1191779A1 (en) 2014-08-01
US20150035107A1 (en) 2015-02-05
US8866945B2 (en) 2014-10-21
GB2518561A (en) 2015-03-25
SG188640A1 (en) 2013-04-30
DE112011103229T5 (de) 2013-07-04
HK1203726A1 (en) 2015-10-30
GB2503308A (en) 2013-12-25
US9136299B2 (en) 2015-09-15
JP2013539294A (ja) 2013-10-17
GB2518561B (en) 2015-04-29
US20120075511A1 (en) 2012-03-29

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