CN103114328B - 8寸<110>磁场直拉单晶的制备方法 - Google Patents
8寸<110>磁场直拉单晶的制备方法 Download PDFInfo
- Publication number
- CN103114328B CN103114328B CN201310058246.XA CN201310058246A CN103114328B CN 103114328 B CN103114328 B CN 103114328B CN 201310058246 A CN201310058246 A CN 201310058246A CN 103114328 B CN103114328 B CN 103114328B
- Authority
- CN
- China
- Prior art keywords
- shouldering
- thin footpath
- make
- cun
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310058246.XA CN103114328B (zh) | 2013-02-25 | 2013-02-25 | 8寸<110>磁场直拉单晶的制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310058246.XA CN103114328B (zh) | 2013-02-25 | 2013-02-25 | 8寸<110>磁场直拉单晶的制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103114328A CN103114328A (zh) | 2013-05-22 |
CN103114328B true CN103114328B (zh) | 2015-10-07 |
Family
ID=48412746
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310058246.XA Active CN103114328B (zh) | 2013-02-25 | 2013-02-25 | 8寸<110>磁场直拉单晶的制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN103114328B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103556216A (zh) * | 2013-11-18 | 2014-02-05 | 内蒙古中环光伏材料有限公司 | 可降低单晶头部漩涡缺陷的直拉单晶生产工艺及检测方法 |
CN112553684A (zh) * | 2020-12-14 | 2021-03-26 | 新美光(苏州)半导体科技有限公司 | 超大尺寸半导体单晶硅棒生长方法及单晶硅棒 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3521862B2 (ja) * | 2000-10-06 | 2004-04-26 | 三菱住友シリコン株式会社 | 単結晶成長方法 |
CN1995485A (zh) * | 2006-12-06 | 2007-07-11 | 天津市环欧半导体材料技术有限公司 | <110>无位错硅单晶的制造方法 |
CN101240444A (zh) * | 2006-12-20 | 2008-08-13 | 硅电子股份公司 | 用于制造硅半导体晶片的方法及装置 |
CN101713095A (zh) * | 2009-08-18 | 2010-05-26 | 芜湖升阳光电科技有限公司 | 双向气流的硅晶体生长装置 |
CN101805925A (zh) * | 2010-02-20 | 2010-08-18 | 西安隆基硅材料股份有限公司 | 太阳能电池用掺镓铟单晶硅材料及其制备方法 |
CN102251276A (zh) * | 2011-06-01 | 2011-11-23 | 奥特斯维能源(太仓)有限公司 | 一种减少太阳能级直拉单晶硅缩颈长度的籽晶 |
CN102839415A (zh) * | 2011-06-26 | 2012-12-26 | 江苏顺大半导体发展有限公司 | 一种太阳能电池用掺镓单晶硅的制备方法 |
-
2013
- 2013-02-25 CN CN201310058246.XA patent/CN103114328B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3521862B2 (ja) * | 2000-10-06 | 2004-04-26 | 三菱住友シリコン株式会社 | 単結晶成長方法 |
CN1995485A (zh) * | 2006-12-06 | 2007-07-11 | 天津市环欧半导体材料技术有限公司 | <110>无位错硅单晶的制造方法 |
CN101240444A (zh) * | 2006-12-20 | 2008-08-13 | 硅电子股份公司 | 用于制造硅半导体晶片的方法及装置 |
CN101713095A (zh) * | 2009-08-18 | 2010-05-26 | 芜湖升阳光电科技有限公司 | 双向气流的硅晶体生长装置 |
CN101805925A (zh) * | 2010-02-20 | 2010-08-18 | 西安隆基硅材料股份有限公司 | 太阳能电池用掺镓铟单晶硅材料及其制备方法 |
CN102251276A (zh) * | 2011-06-01 | 2011-11-23 | 奥特斯维能源(太仓)有限公司 | 一种减少太阳能级直拉单晶硅缩颈长度的籽晶 |
CN102839415A (zh) * | 2011-06-26 | 2012-12-26 | 江苏顺大半导体发展有限公司 | 一种太阳能电池用掺镓单晶硅的制备方法 |
Also Published As
Publication number | Publication date |
---|---|
CN103114328A (zh) | 2013-05-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN105803520B (zh) | Cz‑80单晶炉自动收尾方法 | |
WO2011027992A3 (ko) | 사파이어 단결정 성장방법과 그 장치 | |
WO2012142463A3 (en) | Silicon ingot having uniform multiple dopants and method and apparatus for producing same | |
CN103114328B (zh) | 8寸<110>磁场直拉单晶的制备方法 | |
EA201300076A1 (ru) | Способ получения листового неорганического неметаллического материала с использованием расплавленного шлака | |
MX2018004580A (es) | Metodo para producir proteina de fusion con dominio fc de igg. | |
CN103343385A (zh) | 一种异形尺寸的直拉单晶硅及其生长方法 | |
CN102345155A (zh) | 超重掺As的晶棒拉制方法 | |
WO2008129757A1 (ja) | ビスフェノールaの製造方法 | |
WO2020122836A3 (en) | Method for nitrogen-doped graphene production | |
CN105353800A (zh) | 一种中药醇沉过程冷沉温度的控制方法 | |
CN102718823B (zh) | 溶析结晶精制5’-呈味核苷酸二钠的工艺方法 | |
CN203128691U (zh) | 一种多晶硅的硅芯母料 | |
CN202543166U (zh) | 甜橙油蒸馏加工浓缩设备 | |
MY183015A (en) | Solvent production using monophasic clostridia | |
CN205241850U (zh) | 一种晶体生长用坩埚 | |
MX355821B (es) | Nuevo promotor preferencial de fibra en algodon. | |
CN103290477A (zh) | 一种制备InAsSb薄膜的液相外延装置和方法 | |
CN103103606A (zh) | 一种制备8寸低氧单晶的方法 | |
CN104264220A (zh) | 一种用产品料直接拉制硅芯的方法 | |
CN103641140A (zh) | 一种海盐 | |
CN202492613U (zh) | 蓝宝石单晶体提拉法生长装置 | |
CN202766455U (zh) | 一种低分子聚乙烯蜡脱色除杂分离装置 | |
CN102492001A (zh) | 一种n-乙酰氨基葡萄糖的制备方法 | |
MY187928A (en) | Process for producing silicon single crystal |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20181101 Address after: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Area (outside the ring) Hai Tai Road 12 Patentee after: Tianjin Zhonghuan Semiconductor Co., Ltd. Address before: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Park (outside the ring) Hai Tai Road 12 Patentee before: Huanou Semiconductor Material Technology Co., Ltd., Tianjin |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20190523 Address after: 010000 No. 15 Baoli Street, Saihan District, Hohhot City, Inner Mongolia Patentee after: Inner Mongolia Central Leading Semiconductor Materials Co., Ltd. Address before: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Area (outside the ring) Hai Tai Road 12 Patentee before: Tianjin Zhonghuan Semiconductor Co., Ltd. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20220413 Address after: 010070 No.15 Baolier street, Saihan District, Hohhot, Inner Mongolia Autonomous Region Patentee after: Inner Mongolia Central Leading Semiconductor Materials Co.,Ltd. Patentee after: Central leading semiconductor materials Co., Ltd Address before: 010000 No. 15 Baoli Street, Saihan District, Hohhot City, Inner Mongolia Patentee before: Inner Mongolia Central Leading Semiconductor Materials Co.,Ltd. |
|
TR01 | Transfer of patent right |