CN103098240A - 具有MgO角锥结构的发光装置及其制造方法 - Google Patents
具有MgO角锥结构的发光装置及其制造方法 Download PDFInfo
- Publication number
- CN103098240A CN103098240A CN2011800435296A CN201180043529A CN103098240A CN 103098240 A CN103098240 A CN 103098240A CN 2011800435296 A CN2011800435296 A CN 2011800435296A CN 201180043529 A CN201180043529 A CN 201180043529A CN 103098240 A CN103098240 A CN 103098240A
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- refractive index
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- emitting device
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 239000004065 semiconductor Substances 0.000 claims abstract description 92
- 150000001875 compounds Chemical class 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 230000001105 regulatory effect Effects 0.000 claims description 43
- 238000000034 method Methods 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- 239000012535 impurity Substances 0.000 claims description 7
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- 229910052788 barium Inorganic materials 0.000 claims description 3
- 229910052790 beryllium Inorganic materials 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 229910052794 bromium Inorganic materials 0.000 claims description 3
- 229910052791 calcium Inorganic materials 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 229910052740 iodine Inorganic materials 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 229910052711 selenium Inorganic materials 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052712 strontium Inorganic materials 0.000 claims description 3
- 229910052716 thallium Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 claims description 2
- 229910002601 GaN Inorganic materials 0.000 abstract description 36
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 abstract description 36
- 239000013078 crystal Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000001878 scanning electron micrograph Methods 0.000 description 6
- 230000006872 improvement Effects 0.000 description 5
- 238000005401 electroluminescence Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- CHPZKNULDCNCBW-UHFFFAOYSA-N gallium nitrate Chemical compound [Ga+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O CHPZKNULDCNCBW-UHFFFAOYSA-N 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical group [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001194 electroluminescence spectrum Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 229940044658 gallium nitrate Drugs 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
Description
Claims (11)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2010-0066021 | 2010-07-08 | ||
KR1020100066021A KR101165259B1 (ko) | 2010-07-08 | 2010-07-08 | MgO피라미드 구조를 갖는 발광소자 및 그 제조방법 |
PCT/KR2011/004592 WO2012005459A2 (ko) | 2010-07-08 | 2011-06-23 | Mgo피라미드 구조를 갖는 발광소자 및 그 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103098240A true CN103098240A (zh) | 2013-05-08 |
CN103098240B CN103098240B (zh) | 2015-09-23 |
Family
ID=45441620
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201180043529.6A Expired - Fee Related CN103098240B (zh) | 2010-07-08 | 2011-06-23 | 具有MgO角锥结构的发光装置及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US8993997B2 (zh) |
KR (1) | KR101165259B1 (zh) |
CN (1) | CN103098240B (zh) |
WO (1) | WO2012005459A2 (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20140031514A (ko) * | 2012-09-03 | 2014-03-13 | 포항공과대학교 산학협력단 | 굴절률 조절층을 포함하는 발광 다이오드 및 그 제조 방법 |
KR20140036404A (ko) * | 2012-09-13 | 2014-03-26 | 포항공과대학교 산학협력단 | 발광다이오드 및 그 제조방법 |
KR20150039518A (ko) | 2013-10-02 | 2015-04-10 | 엘지이노텍 주식회사 | 발광소자 |
KR102390830B1 (ko) * | 2019-12-20 | 2022-04-25 | 주식회사 포스코 | 방향성 전기강판용 소둔 분리제 조성물, 방향성 전기강판 및 그의 제조방법 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1838439A (zh) * | 2005-12-14 | 2006-09-27 | 福建师范大学 | 一种提高半导体发光二极管外量子效率的方法 |
CN101315962A (zh) * | 2007-05-29 | 2008-12-03 | 台达电子工业股份有限公司 | 发光二极管装置及其制造方法 |
CN101351899A (zh) * | 2005-12-29 | 2009-01-21 | 罗姆股份有限公司 | 半导体发光元件和其制法 |
KR20090101604A (ko) * | 2008-03-24 | 2009-09-29 | 송준오 | 그룹 3족 질화물계 반도체 발광다이오드 소자 및 이의 제조방법 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6630689B2 (en) * | 2001-05-09 | 2003-10-07 | Lumileds Lighting, U.S. Llc | Semiconductor LED flip-chip with high reflectivity dielectric coating on the mesa |
TW564584B (en) * | 2001-06-25 | 2003-12-01 | Toshiba Corp | Semiconductor light emitting device |
KR100571819B1 (ko) * | 2003-10-16 | 2006-04-17 | 삼성전자주식회사 | 질화물계 발광소자 및 그 제조방법 |
JP2005277374A (ja) * | 2004-02-26 | 2005-10-06 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体発光素子及びその製造方法 |
US8674375B2 (en) * | 2005-07-21 | 2014-03-18 | Cree, Inc. | Roughened high refractive index layer/LED for high light extraction |
JP4778745B2 (ja) * | 2005-07-27 | 2011-09-21 | パナソニック株式会社 | 半導体発光装置及びその製造方法 |
JP2007281037A (ja) * | 2006-04-03 | 2007-10-25 | Dowa Holdings Co Ltd | 半導体発光素子及びその製造方法 |
KR100755591B1 (ko) | 2006-06-22 | 2007-09-06 | 고려대학교 산학협력단 | 질화물계 발광소자의 제조방법 |
US7483212B2 (en) * | 2006-10-11 | 2009-01-27 | Rensselaer Polytechnic Institute | Optical thin film, semiconductor light emitting device having the same and methods of fabricating the same |
US20100148199A1 (en) * | 2008-11-04 | 2010-06-17 | Samsung Led Co., Ltd. | Light emitting device with fine pattern |
KR101233768B1 (ko) * | 2010-12-30 | 2013-02-15 | 포항공과대학교 산학협력단 | 나노 임프린트 몰드 제조방법, 이 방법에 의해 제조된 나노 임프린트 몰드를 이용한 발광다이오드 제조방법 및 이 방법에 의해 제조된 발광다이오드 |
US20140217355A1 (en) * | 2013-02-05 | 2014-08-07 | Rensselaer Polytechnic Institute | Semiconductor light emitting device |
-
2010
- 2010-07-08 KR KR1020100066021A patent/KR101165259B1/ko active IP Right Grant
-
2011
- 2011-06-23 US US13/809,052 patent/US8993997B2/en active Active
- 2011-06-23 WO PCT/KR2011/004592 patent/WO2012005459A2/ko active Application Filing
- 2011-06-23 CN CN201180043529.6A patent/CN103098240B/zh not_active Expired - Fee Related
-
2015
- 2015-03-11 US US14/644,994 patent/US20150200342A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1838439A (zh) * | 2005-12-14 | 2006-09-27 | 福建师范大学 | 一种提高半导体发光二极管外量子效率的方法 |
CN101351899A (zh) * | 2005-12-29 | 2009-01-21 | 罗姆股份有限公司 | 半导体发光元件和其制法 |
CN101315962A (zh) * | 2007-05-29 | 2008-12-03 | 台达电子工业股份有限公司 | 发光二极管装置及其制造方法 |
KR20090101604A (ko) * | 2008-03-24 | 2009-09-29 | 송준오 | 그룹 3족 질화물계 반도체 발광다이오드 소자 및 이의 제조방법 |
Also Published As
Publication number | Publication date |
---|---|
KR101165259B1 (ko) | 2012-08-10 |
CN103098240B (zh) | 2015-09-23 |
KR20120005326A (ko) | 2012-01-16 |
US20150200342A1 (en) | 2015-07-16 |
US20130207074A1 (en) | 2013-08-15 |
WO2012005459A2 (ko) | 2012-01-12 |
WO2012005459A3 (ko) | 2012-05-03 |
US8993997B2 (en) | 2015-03-31 |
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Address after: South Korea Gyeonggi Do Anshan City Applicant after: SEOUL VIOSYS Co.,Ltd. Applicant after: POSTECH ACADEMY-INDUSTRY FOUNDATION Address before: South Korea Gyeonggi Do Anshan City Applicant before: SEOUL OPTO DEVICE Co.,Ltd. Applicant before: POSTECH ACADEMY-INDUSTRY FOUNDATION |
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