CN103098233B - 太阳能电池及其制造方法 - Google Patents

太阳能电池及其制造方法 Download PDF

Info

Publication number
CN103098233B
CN103098233B CN201180043761.XA CN201180043761A CN103098233B CN 103098233 B CN103098233 B CN 103098233B CN 201180043761 A CN201180043761 A CN 201180043761A CN 103098233 B CN103098233 B CN 103098233B
Authority
CN
China
Prior art keywords
buffer layer
layer
annealing
light absorbing
oxygen content
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201180043761.XA
Other languages
English (en)
Chinese (zh)
Other versions
CN103098233A (zh
Inventor
裵道园
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Innotek Co Ltd
Original Assignee
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Publication of CN103098233A publication Critical patent/CN103098233A/zh
Application granted granted Critical
Publication of CN103098233B publication Critical patent/CN103098233B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/128—Annealing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
CN201180043761.XA 2010-10-11 2011-04-27 太阳能电池及其制造方法 Expired - Fee Related CN103098233B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2010-0099001 2010-10-11
KR1020100099001A KR101181095B1 (ko) 2010-10-11 2010-10-11 태양 전지 및 이의 제조 방법
PCT/KR2011/003121 WO2012050280A1 (ko) 2010-10-11 2011-04-27 태양 전지 및 이의 제조 방법

Publications (2)

Publication Number Publication Date
CN103098233A CN103098233A (zh) 2013-05-08
CN103098233B true CN103098233B (zh) 2016-04-13

Family

ID=45938473

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201180043761.XA Expired - Fee Related CN103098233B (zh) 2010-10-11 2011-04-27 太阳能电池及其制造方法

Country Status (5)

Country Link
EP (1) EP2506313B1 (enExample)
JP (1) JP5881717B2 (enExample)
KR (1) KR101181095B1 (enExample)
CN (1) CN103098233B (enExample)
WO (1) WO2012050280A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103952678B (zh) * 2014-04-11 2016-04-06 浙江大学 一种高迁移率的掺氟氧化锌基透明导电薄膜的制备方法
JP6224532B2 (ja) * 2014-06-27 2017-11-01 京セラ株式会社 光電変換装置
KR102262616B1 (ko) 2019-05-20 2021-06-08 영남대학교 산학협력단 Uv를 이용한 태양전지 버퍼층의 제조 방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6169246B1 (en) * 1998-09-08 2001-01-02 Midwest Research Institute Photovoltaic devices comprising zinc stannate buffer layer and method for making

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0604801B1 (en) * 1992-12-30 1999-10-06 Siemens Solar Industries International, Inc. Method of making a thin film heterojunction solar cell
JP4264801B2 (ja) * 2002-07-12 2009-05-20 本田技研工業株式会社 化合物薄膜太陽電池の製造方法
JP2005228975A (ja) * 2004-02-13 2005-08-25 Matsushita Electric Ind Co Ltd 太陽電池
KR20080009346A (ko) * 2006-07-24 2008-01-29 주식회사 엘지화학 태양전지 버퍼층의 제조방법
KR100895977B1 (ko) * 2008-04-10 2009-05-07 키스코홀딩스주식회사 실리콘 박막 태양전지 및 제조방법
JP2009170928A (ja) 2009-02-20 2009-07-30 Showa Shell Sekiyu Kk Ｃｉｓ系太陽電池の製造方法
KR20100098008A (ko) * 2009-02-27 2010-09-06 삼성전자주식회사 태양전지
CN201562684U (zh) * 2009-11-03 2010-08-25 福建钧石能源有限公司 硅基薄膜太阳能电池
JP5517696B2 (ja) * 2010-03-29 2014-06-11 京セラ株式会社 光電変換装置および光電変換装置の製造方法
JP4615067B1 (ja) * 2010-07-06 2011-01-19 富士フイルム株式会社 光電変換素子及びそれを備えた太陽電池

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6169246B1 (en) * 1998-09-08 2001-01-02 Midwest Research Institute Photovoltaic devices comprising zinc stannate buffer layer and method for making

Also Published As

Publication number Publication date
KR20120037320A (ko) 2012-04-19
JP5881717B2 (ja) 2016-03-09
EP2506313A1 (en) 2012-10-03
CN103098233A (zh) 2013-05-08
JP2013539242A (ja) 2013-10-17
EP2506313A4 (en) 2017-08-09
KR101181095B1 (ko) 2012-09-07
EP2506313B1 (en) 2020-08-19
WO2012050280A1 (ko) 2012-04-19

Similar Documents

Publication Publication Date Title
JP6096790B2 (ja) 光電池のための導電性基材
CN102569442A (zh) 薄膜太阳能电池及其制作方法
CN103081120B (zh) 太阳能电池
KR20100109315A (ko) 태양전지 및 이의 제조방법
CN104022179B (zh) 形成太阳能电池的缓冲层的方法和由此形成的太阳能电池
CN104025310A (zh) 太阳能电池及其制造方法
KR101219835B1 (ko) 태양전지 및 이의 제조방법
KR101231364B1 (ko) 태양전지 및 이의 제조방법
KR101283183B1 (ko) 태양전지 및 이의 제조방법
CN103098233B (zh) 太阳能电池及其制造方法
KR101558589B1 (ko) 태양전지의 제조방법
KR101039993B1 (ko) 태양전지 및 이의 제조방법
KR101283240B1 (ko) 태양전지 및 이의 제조방법
KR101091319B1 (ko) 태양전지 및 이의 제조방법
KR101173429B1 (ko) 태양전지 및 이의 제조방법
KR20100066975A (ko) 태양전지 및 이의 제조방법
KR101327099B1 (ko) 태양전지 모듈 및 이의 제조방법
CN104054182B (zh) 太阳能电池设备及其制造方法
KR101450799B1 (ko) 박막형 태양전지 및 그 제조방법
CN103988312A (zh) 太阳能电池及使用其的太阳能电池模块
KR20150105681A (ko) 태양 전지 및 이의 제조방법
CN104067396A (zh) 太阳能电池装置及其制造方法
KR20130070465A (ko) 태양전지 및 이의 제조방법
KR20120090395A (ko) 태양전지 및 이의 제조방법

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20160413

Termination date: 20180427