KR101181095B1 - 태양 전지 및 이의 제조 방법 - Google Patents

태양 전지 및 이의 제조 방법 Download PDF

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Publication number
KR101181095B1
KR101181095B1 KR1020100099001A KR20100099001A KR101181095B1 KR 101181095 B1 KR101181095 B1 KR 101181095B1 KR 1020100099001 A KR1020100099001 A KR 1020100099001A KR 20100099001 A KR20100099001 A KR 20100099001A KR 101181095 B1 KR101181095 B1 KR 101181095B1
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KR
South Korea
Prior art keywords
buffer layer
layer
solar cell
light absorbing
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020100099001A
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English (en)
Korean (ko)
Other versions
KR20120037320A (ko
Inventor
배도원
Original Assignee
엘지이노텍 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to KR1020100099001A priority Critical patent/KR101181095B1/ko
Priority to JP2013532701A priority patent/JP5881717B2/ja
Priority to EP11832667.7A priority patent/EP2506313B1/en
Priority to CN201180043761.XA priority patent/CN103098233B/zh
Priority to PCT/KR2011/003121 priority patent/WO2012050280A1/ko
Publication of KR20120037320A publication Critical patent/KR20120037320A/ko
Application granted granted Critical
Publication of KR101181095B1 publication Critical patent/KR101181095B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/128—Annealing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
KR1020100099001A 2010-10-11 2010-10-11 태양 전지 및 이의 제조 방법 Expired - Fee Related KR101181095B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020100099001A KR101181095B1 (ko) 2010-10-11 2010-10-11 태양 전지 및 이의 제조 방법
JP2013532701A JP5881717B2 (ja) 2010-10-11 2011-04-27 太陽電池及びその製造方法
EP11832667.7A EP2506313B1 (en) 2010-10-11 2011-04-27 Method for manufacturing a solar cell
CN201180043761.XA CN103098233B (zh) 2010-10-11 2011-04-27 太阳能电池及其制造方法
PCT/KR2011/003121 WO2012050280A1 (ko) 2010-10-11 2011-04-27 태양 전지 및 이의 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020100099001A KR101181095B1 (ko) 2010-10-11 2010-10-11 태양 전지 및 이의 제조 방법

Publications (2)

Publication Number Publication Date
KR20120037320A KR20120037320A (ko) 2012-04-19
KR101181095B1 true KR101181095B1 (ko) 2012-09-07

Family

ID=45938473

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020100099001A Expired - Fee Related KR101181095B1 (ko) 2010-10-11 2010-10-11 태양 전지 및 이의 제조 방법

Country Status (5)

Country Link
EP (1) EP2506313B1 (enExample)
JP (1) JP5881717B2 (enExample)
KR (1) KR101181095B1 (enExample)
CN (1) CN103098233B (enExample)
WO (1) WO2012050280A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200133537A (ko) 2019-05-20 2020-11-30 영남대학교 산학협력단 Uv를 이용한 태양전지 버퍼층의 제조 방법

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103952678B (zh) * 2014-04-11 2016-04-06 浙江大学 一种高迁移率的掺氟氧化锌基透明导电薄膜的制备方法
JP6224532B2 (ja) * 2014-06-27 2017-11-01 京セラ株式会社 光電変換装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6169246B1 (en) 1998-09-08 2001-01-02 Midwest Research Institute Photovoltaic devices comprising zinc stannate buffer layer and method for making
JP2009170928A (ja) 2009-02-20 2009-07-30 Showa Shell Sekiyu Kk Ｃｉｓ系太陽電池の製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0604801B1 (en) * 1992-12-30 1999-10-06 Siemens Solar Industries International, Inc. Method of making a thin film heterojunction solar cell
JP4264801B2 (ja) * 2002-07-12 2009-05-20 本田技研工業株式会社 化合物薄膜太陽電池の製造方法
JP2005228975A (ja) * 2004-02-13 2005-08-25 Matsushita Electric Ind Co Ltd 太陽電池
KR20080009346A (ko) * 2006-07-24 2008-01-29 주식회사 엘지화학 태양전지 버퍼층의 제조방법
KR100895977B1 (ko) * 2008-04-10 2009-05-07 키스코홀딩스주식회사 실리콘 박막 태양전지 및 제조방법
KR20100098008A (ko) * 2009-02-27 2010-09-06 삼성전자주식회사 태양전지
CN201562684U (zh) * 2009-11-03 2010-08-25 福建钧石能源有限公司 硅基薄膜太阳能电池
JP5517696B2 (ja) * 2010-03-29 2014-06-11 京セラ株式会社 光電変換装置および光電変換装置の製造方法
JP4615067B1 (ja) * 2010-07-06 2011-01-19 富士フイルム株式会社 光電変換素子及びそれを備えた太陽電池

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6169246B1 (en) 1998-09-08 2001-01-02 Midwest Research Institute Photovoltaic devices comprising zinc stannate buffer layer and method for making
JP2009170928A (ja) 2009-02-20 2009-07-30 Showa Shell Sekiyu Kk Ｃｉｓ系太陽電池の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200133537A (ko) 2019-05-20 2020-11-30 영남대학교 산학협력단 Uv를 이용한 태양전지 버퍼층의 제조 방법

Also Published As

Publication number Publication date
JP2013539242A (ja) 2013-10-17
CN103098233B (zh) 2016-04-13
WO2012050280A1 (ko) 2012-04-19
EP2506313A1 (en) 2012-10-03
JP5881717B2 (ja) 2016-03-09
EP2506313B1 (en) 2020-08-19
EP2506313A4 (en) 2017-08-09
CN103098233A (zh) 2013-05-08
KR20120037320A (ko) 2012-04-19

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