CN103098160B - 用于赝电容能量存储的纳米结构电极 - Google Patents

用于赝电容能量存储的纳米结构电极 Download PDF

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Publication number
CN103098160B
CN103098160B CN201180042946.9A CN201180042946A CN103098160B CN 103098160 B CN103098160 B CN 103098160B CN 201180042946 A CN201180042946 A CN 201180042946A CN 103098160 B CN103098160 B CN 103098160B
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CN
China
Prior art keywords
pseudocapacitive
substrate
nanopillars
layer
aao
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Expired - Fee Related
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CN201180042946.9A
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English (en)
Chinese (zh)
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CN103098160A (zh
Inventor
R·A·海特
S·M·罗斯纳格尔
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Core Usa Second LLC
GlobalFoundries Inc
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International Business Machines Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22—Electrodes
    • H01G11/24—Electrodes characterised by structural features of the materials making up or comprised in the electrodes, e.g. form, surface area or porosity; characterised by the structural features of powders or particles used therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22—Electrodes
    • H01G11/26—Electrodes characterised by their structure, e.g. multi-layered, porosity or surface features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22—Electrodes
    • H01G11/30—Electrodes characterised by their material
    • H01G11/32—Carbon-based
    • H01G11/36—Nanostructures, e.g. nanofibres, nanotubes or fullerenes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22—Electrodes
    • H01G11/30—Electrodes characterised by their material
    • H01G11/46—Metal oxides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/13—Energy storage using capacitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Electric Double-Layer Capacitors Or The Like (AREA)
  • Battery Electrode And Active Subsutance (AREA)
  • Secondary Cells (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
CN201180042946.9A 2010-09-07 2011-07-20 用于赝电容能量存储的纳米结构电极 Expired - Fee Related CN103098160B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/876,441 US8599533B2 (en) 2010-09-07 2010-09-07 Nanostructure electrode for pseudocapacitive energy storage
US12/876,441 2010-09-07
PCT/US2011/044643 WO2012033570A1 (en) 2010-09-07 2011-07-20 Nanostructure electrode for pseudocapacitive energy storage

Publications (2)

Publication Number Publication Date
CN103098160A CN103098160A (zh) 2013-05-08
CN103098160B true CN103098160B (zh) 2016-12-07

Family

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Family Applications (1)

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CN201180042946.9A Expired - Fee Related CN103098160B (zh) 2010-09-07 2011-07-20 用于赝电容能量存储的纳米结构电极

Country Status (8)

Country Link
US (1) US8599533B2 (https=)
JP (1) JP5629381B2 (https=)
CN (1) CN103098160B (https=)
DE (1) DE112011102970T5 (https=)
GB (1) GB2497040B (https=)
RU (1) RU2521083C2 (https=)
TW (1) TWI497547B (https=)
WO (1) WO2012033570A1 (https=)

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US9396883B2 (en) * 2013-04-26 2016-07-19 Intel Corporation Faradaic energy storage device structures and associated techniques and configurations
CA2851434A1 (en) 2013-05-03 2014-11-03 The Governors Of The University Of Alberta Carbon nanosheets
US10090376B2 (en) 2013-10-29 2018-10-02 Micron Technology, Inc. Methods of forming semiconductor device structures, and methods of forming capacitor structures
WO2015112628A1 (en) * 2014-01-23 2015-07-30 Masdar Institute Of Science And Technology Fabrication of enhanced supercapacitors using atomic layer deposition of metal oxide on nanostructures
CN106252071B (zh) * 2016-08-05 2018-04-03 南京理工大学 一种高比容量纳米电介质电容器及其制备方法
CN106449158B (zh) * 2016-09-12 2018-07-17 武汉理工大学 钛基底上镍锰复合氧化物纳米菱柱阵列电极及其制备方法
JP2017130669A (ja) * 2017-02-27 2017-07-27 インテル コーポレイション エネルギー貯蔵デバイスのエネルギー密度及び達成可能な電力出力を増やす方法
RU2678055C2 (ru) * 2017-07-14 2019-01-22 ООО "Нелан-оксид плюс" Способ получения эластичной алюмооксидной наномембраны
CN108133838B (zh) * 2017-12-21 2019-09-17 北京理工大学 一种基于飞秒激光复合阳极氧化制备赝电容电极的方法
EP3570307A1 (en) * 2018-05-18 2019-11-20 Murata Manufacturing Co., Ltd. Integrated energy storage component
RU2716700C1 (ru) * 2019-08-28 2020-03-16 Акционерное общество "Концерн "Созвездие" Способ модификации поверхности фольги для электролитических конденсаторов
CN114744211B (zh) * 2022-05-13 2024-03-29 南京邮电大学 一种超分支氧化的多孔金属负极集流体及其制备方法

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US7623340B1 (en) * 2006-08-07 2009-11-24 Nanotek Instruments, Inc. Nano-scaled graphene plate nanocomposites for supercapacitor electrodes
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Also Published As

Publication number Publication date
GB2497040A (en) 2013-05-29
JP5629381B2 (ja) 2014-11-19
DE112011102970T5 (de) 2013-08-08
JP2013541836A (ja) 2013-11-14
GB2497040B (en) 2014-06-18
CN103098160A (zh) 2013-05-08
RU2521083C2 (ru) 2014-06-27
US20120057273A1 (en) 2012-03-08
TWI497547B (zh) 2015-08-21
WO2012033570A1 (en) 2012-03-15
US8599533B2 (en) 2013-12-03
RU2012106418A (ru) 2013-10-27
GB201304363D0 (en) 2013-04-24
TW201243888A (en) 2012-11-01

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Effective date of registration: 20171103

Address after: Grand Cayman, Cayman Islands

Patentee after: GLOBALFOUNDRIES INC.

Address before: American New York

Patentee before: Core USA second LLC

Effective date of registration: 20171103

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Patentee after: Core USA second LLC

Address before: American New York

Patentee before: International Business Machines Corp.

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Granted publication date: 20161207

Termination date: 20190720