CN103096612A - High-frequency substrate structure - Google Patents
High-frequency substrate structure Download PDFInfo
- Publication number
- CN103096612A CN103096612A CN201110338633XA CN201110338633A CN103096612A CN 103096612 A CN103096612 A CN 103096612A CN 201110338633X A CN201110338633X A CN 201110338633XA CN 201110338633 A CN201110338633 A CN 201110338633A CN 103096612 A CN103096612 A CN 103096612A
- Authority
- CN
- China
- Prior art keywords
- layer
- adhesion coating
- dielectric layer
- substrate structure
- frequency substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Laminated Bodies (AREA)
Abstract
The invention discloses a high-frequency substrate structure. A dielectric layer is provided with two opposite surfaces, namely a first surface and a second surface, wherein a first adhesive layer and a second adhesive layer are respectively attached to the first surface and the second surface of the dielectric layer in a bonding mode. The high-frequency substrate structure is provided with a first metal layer, wherein the first adhesive layer is located between the first metal layer and the dielectric layer, a first polyimide layer is attached to the second adhesive layer in a bonding mode, and a second metal layer is attached to the first polyimide layer in a bonding mode. According to the high-frequency substrate structure, one adhesive layer is arranged between the dielectric layer and each metal layer; since the adhesive layers have proper adhesive force, the adhesive layers can be easily attached to the surfaces of the dielectric layer without any gap, and the dielectric layer and the polyimide layer are enabled to be placed between the metal layers through the adhesive layers in a sandwiched mode; and through the formation of the adhesive layers, the processability of the dielectric layer in a lamination process can be improved, and the high-frequency substrate structure further has the advantages of being simple and convenient to manufacture, low in cost and high in yield rate.
Description
Technical field
The present invention relates to a kind of high frequency substrate.
Background technology
Printed circuit board (PCB) is material indispensable in electronic product, and along with the consumption electronic products demand is grown up, and also grows with each passing day for the demand of printed circuit board (PCB).But have the characteristics such as flexibility and three-dimensional space distribution due to flexible printed wiring board, emphasize that at the technicalization electronic product development compact, flexibility drives under gesture, computer and ancillary equipment thereof, communication product and consumption electronic products etc. at present are widely used.
Recently, because electronic product has moved towards at a high speed and the application trend of high frequency, make now that electronic product all needs to support with tellite with high-frequency circuit, to reach high frequency and running effect at a high speed.With in the material of tellite, in the majority with fluorine resin except pottery and expanded material at numerous high-frequency circuits that are used as, its reason is that it has the excellent electrical properties such as low-k and low-dielectric loss.Yet, when utilizing high temperature hot pressing to close fluorine resin, processing difficulties makes the production yield not good, and different from the metal level thermal coefficient of expansion, can't use automation equipment to carry out volume production, and cost is higher, and its surface nature of fluorine resin has utmost point low-surface-energy in addition, is difficult for the characteristic of sticky metals, cause delamination, yield is not high.
In view of this, need to a kind ofly can improve the processing procedure processability, still have the high-frequency substrate structure of low-k and low-dielectric loss simultaneously.
Summary of the invention
In order to overcome defects, the invention provides a kind of high-frequency substrate structure, this high-frequency substrate structure can promote the processability of dielectric layer in pressure programming when guaranteeing to have low-k and low-dielectric loss, have advantages of simple for production, cost is low and the production yield is good.
The present invention for the technical scheme that solves its technical problem and adopt is:
a kind of high-frequency substrate structure, be provided with dielectric layer, described dielectric layer has two relative surfaces and is respectively first surface and second surface, be stained with respectively the first adhesion coating and the second adhesion coating on the first surface of described dielectric layer and second surface, be provided with the first metal layer, described the first adhesion coating is between described the first metal layer and described dielectric layer, be stained with the first polyimide layer on described the second adhesion coating, be stained with the second metal level on described the first polyimide layer, described the first polyimide layer is folded between described the second adhesion coating and described the second metal level.
The present invention has also further adopted following technical proposals in order to solve its technical problem:
A kind of structure of this high-frequency substrate structure is: described the first metal layer adheres on described the first adhesion coating, and described the first adhesion coating is folded between described the first metal layer and described dielectric layer.
The another kind of structure of this high-frequency substrate structure is: on the said structure basis, be provided with the second polyimide layer, described the second polyimide layer adheres on described the first adhesion coating, described the first metal layer adheres on described the second polyimide layer, and described the second polyimide layer is folded between described the first metal layer and described the first adhesion coating.
Described dielectric layer is fluoropolymer layer, and the thickness of described dielectric layer is 25～50 microns.Preferably, described dielectric layer is polytrifluorochloroethylene (Polychlorotrifluorethylene, PCTFE) layer, polytetrafluoroethylene (polytetrafluorethylene, PTFE) layer, polytetrafluoroethylene polyhexafluoropropylene copolymer (Fluorinated ethylene propylene, FEP) a kind of in layer and the copolymer (ETFE) of tetrafluoroethene and ethene layer, more preferably, the copolymer layer of polytetrafluoroethylene floor or tetrafluoroethene and ethene.And has coarse structure (first surface with second surface on have the concavo-convex coarse structure that is connected) person through roughening treatment take electrical characteristic with low-k (for example Dk=2.1 (1GHz)), low-dielectric loss (for example Df=0.0005 (1GHz)) and surface as good, therefore, this high-frequency substrate structure has the characteristic of low-k.
The material of described the first adhesion coating and the second adhesion coating be respectively epoxy resin, acrylic resin, amido formate be resin, silicon rubber be resin, poly-be at least a in resin and polyimide resin to ring diformazan benzene series resin, bismaleimides, the thickness of described the first adhesion coating and the second adhesion coating is respectively 6～15 microns.
Described the first metal layer and the second metal level are all the copper layer, and the thickness of described the first metal layer and the second metal level is respectively 12～36 microns.
The thickness of described the first polyimide layer is 6～25 microns.
The thickness of described the second polyimide layer is 6～25 microns.
The invention has the beneficial effects as follows: high-frequency substrate structure of the present invention is provided with adhesion coating between dielectric layer and metal level, because adhesion coating has suitable adhesion strength, be easy to the surface applying of seamless unoccupied place and dielectric layer, by adhesion coating, dielectric layer and polyimide layer are folded between metal level, formation by adhesion coating, can promote dielectric layer in the processability of pressure programming, have more simple for production, the low good advantage of production yield that reaches of cost.
Description of drawings
Fig. 1 is the described high-frequency substrate structure schematic diagram of the embodiment of the present invention 1;
Fig. 2 is the described high-frequency substrate structure schematic diagram of the embodiment of the present invention 2.
Embodiment
Below by specific instantiation explanation the specific embodiment of the present invention, the personage who is familiar with this skill can understand advantage of the present invention and effect easily by content disclosed in the present specification.The present invention also can other different mode be implemented, and, under not departing from disclosed category, can give different modifications and change that is.
Notice, the appended graphic structure that illustrates of this specification, ratio, size etc., equal contents in order to coordinate specification to disclose only, understanding and reading for the personage who is familiar with this skill, be not to be the enforceable qualifications of the present invention, therefore the technical essential meaning of tool not, the adjustment of the modification of any structure, the change of proportionate relationship or size, not affecting under the effect that the present invention can produce and the purpose that can reach, all should still drop on disclosed technology contents and get in the scope that can contain.Simultaneously, that quotes in this specification reaches terms such as " second " as " first ", also understanding for ease of narration only, but not in order to limit the enforceable scope of the present invention, the change of its relativeness or adjustment under without essence change technology contents, should also be considered as the enforceable category of the present invention.
Embodiment 1: a kind of high-frequency substrate structure 100, be provided with dielectric layer 110, described dielectric layer has two relative surfaces and is respectively first surface 110a and second surface 110b, has the concavo-convex coarse structure that is connected 1101 on the first surface 110a of described dielectric layer and second surface 110b.be stained with respectively the first adhesion coating 111 and the second adhesion coating 112 on the first surface 110a of described dielectric layer 110 and second surface 110b, be provided with the first metal layer 115, described the first metal 115 adheres on described the first adhesion coating 111, described the first adhesion coating 111 is folded between described the first metal layer 115 and described dielectric layer 110, be stained with the first polyimide layer 113 on described the second adhesion coating 112, be stained with the second metal level 116 on described the first polyimide layer 113, described the first polyimide layer 113 is folded between described the second adhesion coating 112 and described the second metal level 116.
Wherein, described dielectric layer is 110 can use the fluoropolymer layer with low-k material, the example comprises but non-being limited to: the copolymer of polytetrafluoroethylene polyhexafluoropropylene copolymer, polytetrafluoroethylene or tetrafluoroethene and ethene, the preferably copolymer of polytetrafluoroethylene or tetrafluoroethene and ethene.Have the excellent electric characteristics such as low-k and low-dielectric loss due to polytetrafluoroethylene, therefore polytetrafluoroethylene is better dielectric layer base material.Generally speaking, this dielectric layer 110 has the thickness of 25 to 50 microns.
Wherein, described the first adhesion coating 111 and the second adhesion coating 112 can be identical or different resin solid, and the example of the material of this first adhesion coating 111 and the second adhesion coating 112 comprises but non-being limited to: epoxy resin, acrylic resin, amido formate be resin, silicon rubber be resin, poly-be one or more resins of resin and group that polyimide resin forms to ring diformazan benzene series resin, bismaleimides.Generally speaking, the thickness of this first adhesion coating 111 and the second adhesion coating 112 is separately between the scope of 6 to 15 microns, and is better approximately between 6 to 12 microns.
Wherein, described the first metal layer 115 and the second metal level 116 are all the copper layer, and the thickness of 116 layers of this first metal layer 115 and the second metal levels is better approximately between 12 to 18 microns separately between 12 to 36 microns.
Wherein, the thickness of described the first polyimide layer 113 is 6～25 microns.
In the present embodiment, dielectric layer 110 is to be bonded to the first metal layer 115 by the first adhesion coating 111; And conform to again the second metal level 116 after being bonded to the first polyimide layer 113 by the second adhesion coating 112.In addition, the first polyimide layer 113 and the second metal level 116 can be by after polyamic acid is coated to copper metal layer, are copper clad laminate through the glue-free of cyclodehydration formation.High-frequency substrate structure 100 of the present invention is by adhesion coating, dielectric layer and polyimide layer to be folded between metal level, make high frequency substrate even utilize pressure programming, also can promote the processability of dielectric layer, have more simple for production, low-cost and produce the good advantage of yield.
Embodiment 2: a kind of high-frequency substrate structure 200, be provided with dielectric layer 220, described dielectric layer has two relative surfaces and is respectively first surface 220a and second surface 220b, has the concavo-convex coarse structure that is connected 2201 on the first surface 220a of described dielectric layer and second surface 220b.be stained with respectively the first adhesion coating 221 and the second adhesion coating 222 on the first surface 220a of described dielectric layer 220 and second surface 220b, be provided with the first metal layer 225 and the second polyimide layer 224, described the second polyimide layer 224 adheres on described the first adhesion coating 221, described the first metal layer 225 adheres on described the second polyimide layer 224, described the second polyimide layer 224 is folded between described the first metal layer 225 and described the first adhesion coating 221, be stained with the first polyimide layer 223 on described the second adhesion coating 222, be stained with the second metal level 226 on described the first polyimide layer 223, described the first polyimide layer 223 is folded between described the second adhesion coating 222 and described the second metal level 226.
Wherein, described dielectric layer is 220 can use the fluoropolymer layer with low-k material, the example comprises but non-being limited to: the copolymer of polytetrafluoroethylene polyhexafluoropropylene copolymer, polytetrafluoroethylene or tetrafluoroethene and ethene, the preferably copolymer of polytetrafluoroethylene or tetrafluoroethene and ethene.In the present embodiment, this dielectric layer is polytetrafluoroethylene floor (industrial model SD-222), and has the thickness of 25 to 50 microns.
Wherein, described the first adhesion coating 221 and the second adhesion coating 222 can be identical or different resin solid, and the example of the material of this first adhesion coating 221 and the second adhesion coating 222 comprises but non-being limited to: epoxy resin, acrylic resin, amido formate be resin, silicon rubber be resin, poly-be one or more resins of resin and group that polyimide resin forms to ring diformazan benzene series resin, bismaleimides.Generally speaking, the thickness of this first adhesion coating 221 and the second adhesion coating 222 is separately between the scope of 6 to 15 microns, and is better approximately between 6 to 12 microns.
Wherein, described the first metal layer 225 and the second metal level 226 are all the copper layer, and the thickness of 226 layers of this first metal layer 225 and the second metal levels is better approximately between 12 to 18 microns separately between 12 to 36 microns.
Wherein, the thickness of described the first polyimide layer 223 is 6～25 microns.The thickness of described the second polyimide layer 224 is 6～25 microns.
In the present embodiment, dielectric layer 220 is to conform to the first metal layer 225 after being bonded to the second polyimide layer 224 by the first adhesion coating 221 again; And conform to again the second metal level 226 after being bonded to the first polyimide layer 223 by the second adhesion coating 222.In addition, the formation of the first polyimide layer 223 and the second metal level 226 and the second polyimide layer 224 all can be by after polyamic acid is coated to copper metal layer with the formation of the first metal layer 225, are copper clad laminate through the glue-free of cyclodehydration formation.High-frequency substrate structure 200 of the present invention is by adhesion coating, dielectric layer and polyimide layer to be folded between metal level, make high frequency substrate even utilize pressure programming, also can promote the processability of dielectric layer, have more simple for production, low-cost and produce the good advantage of yield.
Below the electrical characteristic of high frequency substrate is tested:
Prepare the high frequency substrate sample according to data information shown in embodiment 1 and embodiment 2 and table one, and this sample is carried out mechanical property and electrical characteristics test, test event comprises Bonding strength (peel strength) test, omnipotent puller system (model: C13027); Dielectric constant and dielectric loss measure according to ASTM 2520 waveguide resonant cavities (Waveguide Resonators) test mode, and with outcome record in table one.
Table one
First and second adhesive layer thickness of comparative example has problems as affecting the performance of dielectric loss, because the thickness effect dielectric loss reduces the signal quality, affects the signal authenticity, causes distortion.
As shown in Table 1, high-frequency substrate structure of the present invention has low-k and low dielectric absorption really.Therefore, the present invention is folded between metal level dielectric layer and polyimide layer by adhesion coating, therefore need not carry out the high-temperature laminating processing procedure, can not affect the substrate processability, can make simple for productionly, has advantages of low cost, productivity ratio is good and excellent electric characteristics.
In sum, high-frequency substrate structure of the present invention is folded between metal level dielectric layer and polyimide layer by adhesion coating, by the formation of adhesion coating, can promote dielectric layer in the processability of high-temperature laminating processing procedure, have more simple for production, low-cost and produce the good advantage of yield.
Above-described embodiment is only illustrative principle of the present invention and effect thereof, but not is used for restriction the present invention.The scope of the present invention should be as listed in claims.
Claims (10)
1. high-frequency substrate structure, it is characterized in that: be provided with dielectric layer, described dielectric layer has two relative surfaces and is respectively first surface and second surface, be stained with respectively the first adhesion coating and the second adhesion coating on the first surface of described dielectric layer and second surface, be provided with the first metal layer, described the first adhesion coating is between described the first metal layer and described dielectric layer, be stained with the first polyimide layer on described the second adhesion coating, be stained with the second metal level on described the first polyimide layer, described the first polyimide layer is folded between described the second adhesion coating and described the second metal level.
2. high-frequency substrate structure according to claim 1, it is characterized in that: described the first metal layer adheres on described the first adhesion coating, and described the first adhesion coating is folded between described the first metal layer and described dielectric layer.
3. high-frequency substrate structure according to claim 1, it is characterized in that: be provided with the second polyimide layer, described the second polyimide layer adheres on described the first adhesion coating, described the first metal layer adheres on described the second polyimide layer, and described the second polyimide layer is folded between described the first metal layer and described the first adhesion coating.
4. high-frequency substrate structure according to claim 1, it is characterized in that: described dielectric layer is fluoropolymer layer, the thickness of described dielectric layer is 25～50 microns.
5. high-frequency substrate structure according to claim 4 is characterized in that: described dielectric layer is a kind of in the copolymer layer of polytrifluorochloroethylene layer, polytetrafluoroethylene floor, polytetrafluoroethylene polyhexafluoropropylene copolymer layer and tetrafluoroethene and ethene.
6. high-frequency substrate structure according to claim 1, it is characterized in that: the material of described the first adhesion coating and the second adhesion coating be respectively epoxy resin, acrylic resin, amido formate be resin, silicon rubber be resin, poly-be at least a in resin and polyimide resin to ring diformazan benzene series resin, bismaleimides, the thickness of described the first adhesion coating and the second adhesion coating is respectively 6～15 microns.
7. high-frequency substrate structure according to claim 1, it is characterized in that: described the first metal layer and the second metal level are all the copper layer, and the thickness of described the first metal layer and the second metal level is respectively 12～36 microns.
8. high-frequency substrate structure according to claim 1, it is characterized in that: the thickness of described the first polyimide layer is 6～25 microns.
9. high-frequency substrate structure according to claim 3, it is characterized in that: the thickness of described the second polyimide layer is 6～25 microns.
10. high-frequency substrate structure according to claim 1 is characterized in that: have the concavo-convex coarse structure that is connected on the first surface of described dielectric layer and second surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110338633.XA CN103096612B (en) | 2011-11-01 | 2011-11-01 | High-frequency substrate structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110338633.XA CN103096612B (en) | 2011-11-01 | 2011-11-01 | High-frequency substrate structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103096612A true CN103096612A (en) | 2013-05-08 |
| CN103096612B CN103096612B (en) | 2015-07-22 |
Family
ID=48208559
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110338633.XA Active CN103096612B (en) | 2011-11-01 | 2011-11-01 | High-frequency substrate structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103096612B (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105295753A (en) * | 2014-07-22 | 2016-02-03 | 昆山雅森电子材料科技有限公司 | High-frequency adhesive glue laminated structure and preparation method thereof |
| CN106034378A (en) * | 2015-03-11 | 2016-10-19 | 深圳市英内尔科技有限公司 | Reel-to-reel flexible circuit board made of novel material and manufacturing method thereof |
| CN107408751A (en) * | 2015-03-31 | 2017-11-28 | 大金工业株式会社 | Dielectric waveguide circuit |
| CN108454192A (en) * | 2017-02-17 | 2018-08-28 | 昆山雅森电子材料科技有限公司 | PI type high-frequency high-speed transmission Double-sided copper clad laminates and preparation method thereof |
| US20180332710A1 (en) * | 2017-05-10 | 2018-11-15 | Kunshan Aplus Tec. Corporation | Composite LCP high-frequency high-speed double-sided copper foil substrate and preparation method thereof |
| TWI664086B (en) * | 2018-01-18 | 2019-07-01 | 亞洲電材股份有限公司 | Double-sided copper foil substrate with fluorine polymer and high frequency and high transmission characteristics and the preparation method thereof and composite |
| TWI721859B (en) * | 2019-07-03 | 2021-03-11 | 亞洲電材股份有限公司 | Fluoropolymer high-frequency substrate, cover film, bondply and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070206364A1 (en) * | 2006-03-02 | 2007-09-06 | Saint-Gobain Performance Plastics Corporation | Methods of forming a flexible circuit board |
| CN101340779A (en) * | 2007-07-04 | 2009-01-07 | 三星电机株式会社 | Carrier and method for manufacturing printed circuit board |
| CN101437358A (en) * | 2007-11-14 | 2009-05-20 | 亚洲电材股份有限公司 | Protection film for printed circuit board and procedure for processing circuit board using the protection film |
| CN201910969U (en) * | 2010-12-31 | 2011-07-27 | 深圳市华严慧海电子有限公司 | Rigid flexible printed circuit board |
| CN202276545U (en) * | 2011-11-01 | 2012-06-13 | 昆山雅森电子材料科技有限公司 | High-frequency substrate structure |
-
2011
- 2011-11-01 CN CN201110338633.XA patent/CN103096612B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070206364A1 (en) * | 2006-03-02 | 2007-09-06 | Saint-Gobain Performance Plastics Corporation | Methods of forming a flexible circuit board |
| CN101340779A (en) * | 2007-07-04 | 2009-01-07 | 三星电机株式会社 | Carrier and method for manufacturing printed circuit board |
| CN101437358A (en) * | 2007-11-14 | 2009-05-20 | 亚洲电材股份有限公司 | Protection film for printed circuit board and procedure for processing circuit board using the protection film |
| CN201910969U (en) * | 2010-12-31 | 2011-07-27 | 深圳市华严慧海电子有限公司 | Rigid flexible printed circuit board |
| CN202276545U (en) * | 2011-11-01 | 2012-06-13 | 昆山雅森电子材料科技有限公司 | High-frequency substrate structure |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105295753A (en) * | 2014-07-22 | 2016-02-03 | 昆山雅森电子材料科技有限公司 | High-frequency adhesive glue laminated structure and preparation method thereof |
| CN105295753B (en) * | 2014-07-22 | 2017-12-19 | 昆山雅森电子材料科技有限公司 | High frequency sticks together glue layer stack structure and preparation method thereof |
| CN106034378A (en) * | 2015-03-11 | 2016-10-19 | 深圳市英内尔科技有限公司 | Reel-to-reel flexible circuit board made of novel material and manufacturing method thereof |
| CN107408751A (en) * | 2015-03-31 | 2017-11-28 | 大金工业株式会社 | Dielectric waveguide circuit |
| CN107408751B (en) * | 2015-03-31 | 2022-08-12 | 大金工业株式会社 | Dielectric waveguide circuit |
| CN108454192A (en) * | 2017-02-17 | 2018-08-28 | 昆山雅森电子材料科技有限公司 | PI type high-frequency high-speed transmission Double-sided copper clad laminates and preparation method thereof |
| CN108454192B (en) * | 2017-02-17 | 2020-01-14 | 昆山雅森电子材料科技有限公司 | Double-sided copper foil substrate for PI type high-frequency high-speed transmission and preparation method thereof |
| US20180332710A1 (en) * | 2017-05-10 | 2018-11-15 | Kunshan Aplus Tec. Corporation | Composite LCP high-frequency high-speed double-sided copper foil substrate and preparation method thereof |
| US11369023B2 (en) * | 2017-05-10 | 2022-06-21 | Kunshan Aplus Tec. Corporation | Composite LCP high-frequency high-speed double-sided copper foil substrate and preparation method thereof |
| TWI664086B (en) * | 2018-01-18 | 2019-07-01 | 亞洲電材股份有限公司 | Double-sided copper foil substrate with fluorine polymer and high frequency and high transmission characteristics and the preparation method thereof and composite |
| TWI721859B (en) * | 2019-07-03 | 2021-03-11 | 亞洲電材股份有限公司 | Fluoropolymer high-frequency substrate, cover film, bondply and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103096612B (en) | 2015-07-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103096612B (en) | High-frequency substrate structure | |
| CN108859316B (en) | Composite LCP high-frequency high-speed double-sided copper foil substrate and preparation method thereof | |
| CN206490891U (en) | The low-dielectric loss FRCC substrates of structure are folded with combined type | |
| CN102480837B (en) | Flexible circuit board | |
| KR100707056B1 (en) | Polyimide based flexible copper clad laminates and method of producing the same | |
| KR20200015643A (en) | Flexible printed circuit | |
| CN206840863U (en) | Combined type LCP high-frequency high-speed Double-sided copper clad laminates | |
| CN206932462U (en) | Combined type LCP high-frequency high-speed FRCC base materials | |
| CN108454192A (en) | PI type high-frequency high-speed transmission Double-sided copper clad laminates and preparation method thereof | |
| CN109699132A (en) | Multilayer LCP low temperature compression method and the product of preparation | |
| TW201347623A (en) | Flexible metal clad laminate and manufacturing method thereof | |
| CN101296562A (en) | Copper foil substrates and method for making flexible printed circuit board of the same | |
| CN202276545U (en) | High-frequency substrate structure | |
| CN201499374U (en) | Double-side copper foil baseplate structure | |
| TWI701478B (en) | Composite stacked liquid crystal polymer substrate and preparation method thereof | |
| CN110982489A (en) | High-frequency glue and high-frequency flexible copper clad laminate applying same | |
| CN103635015A (en) | High-frequency substrate structure and manufacturing method thereof | |
| TWI722309B (en) | High-frequency high-transmission double-sided copper foil substrate, composite material for flexible printed circuit board and production method thereof | |
| CN208128629U (en) | FPC based on high frequency FRCC Yu FCCL single sided board | |
| TWM422159U (en) | High-frequency substrate structure | |
| CN102118915B (en) | Double-side copper foil substrate and manufacturing method thereof | |
| CN110366330A (en) | FPC multi-layer board and technique based on high frequency FRCC Yu high frequency dual platen | |
| CN202773176U (en) | High-frequency substrate structure | |
| CN214727054U (en) | High-frequency transmission composite copper foil substrate | |
| TWI617454B (en) | Composite laminate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |