CN103635015A - High-frequency substrate structure and manufacturing method thereof - Google Patents
High-frequency substrate structure and manufacturing method thereof Download PDFInfo
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- CN103635015A CN103635015A CN201210308259.3A CN201210308259A CN103635015A CN 103635015 A CN103635015 A CN 103635015A CN 201210308259 A CN201210308259 A CN 201210308259A CN 103635015 A CN103635015 A CN 103635015A
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Abstract
The invention disclose a high-frequency substrate structure and a manufacturing method thereof. The high-frequency substrate structure comprises a composite film that is formed by a first sublayer, a second sublayer and a third sublayer. The first sublayer, the second sublayer and the third sublayer are laminated in sequence; and at least one of the first sublayer, the second sublayer and the third sublayer is a fluorine type polymer layer. In addition, the high-frequency substrate structure also includes a first metal layer and a second metal layer. The first metal layer is formed at the first sublayer that is clamped between the second sublayer and the first metal layer; and the second metal layer is formed at the third sublayer that is clamped between the second sublayer and the second metal layer. According to the invention, the manufacturing process machinability of the high-frequency substrate structure is good; and on the basis of testing results, the high-frequency substrate structure has the advantages of low dielectric constant, low dielectric loss and good heat resistance.
Description
Technical field
The present invention relates to a kind of high-frequency substrate structure, espespecially a kind of between two metal levels high-frequency substrate structure and the manufacture method thereof of sandwiched composite membrane.
Background technology
Printed circuit board (PCB) is material indispensable in electronic product, and along with consumption electronic products demand is grown up, and for the demand of printed circuit board (PCB), also grows with each passing day.Due to flexible printed wiring board have flexibility and can three-dimensional space distribution etc. characteristic, at technicalization electronic product, emphasize that development compact, flexibility drives under gesture, computer and ancillary equipment thereof, communication product and consumption electronic products etc. are at present widely used.
Recently, because electronic product has moved towards at a high speed and the application trend of high frequency, make electronic product now all need to support with tellite with high-frequency circuit, to reach high frequency and running effect at a high speed.At numerous high-frequency circuits that are used as, use in the material of tellite, except pottery and expanded material, in the majority with fluorine resin, its reason is that fluorine resin has low-k (Dk) and low-dielectric loss (Df), as polytetrafluoroethylene (PTFE) substrate has Dk value 2.1, Df value 0.0004 under frequency 10GHz, with the electrical properties of low water absorption 0.0003 excellence such as grade.
But the low glass transition temperature of PTFE substrate Tg is 19 ℃, thermal endurance is not enough.
Therefore, still need exploitation can improve processing procedure processability, there is the good high-frequency substrate structure of low-k and low-dielectric loss and thermal endurance simultaneously.
Summary of the invention
In order to overcome above-mentioned defect, the invention provides a kind of high-frequency substrate structure and manufacture method thereof, high-frequency substrate structure processing procedure processability of the present invention is good, and has low-k, low-dielectric loss and good thermal endurance.
The present invention for the technical scheme that solves its technical problem and adopt is:
A kind of high-frequency substrate structure, comprise composite membrane, described composite membrane consists of the first sublayer sequentially coinciding mutually, the second sublayer and the 3rd San Ge sublayer, sublayer, and wherein, in described the first sublayer, described the second sublayer and described the 3rd San Ge sublayer, sublayer, having a sublayer at least is fluorine based polymer layer; Also comprise the first metal layer, described the first metal layer is formed on described the first sublayer, and described the first sublayer is folded between described the second sublayer and described the first metal layer; Also comprise the second metal level, described the second metal level is formed on described the 3rd sublayer, and described the 3rd sublayer is folded between described the second sublayer and described the second metal level.
Preferably, described the second sublayer is fluorine based polymer layer, and described the first sublayer and described the 3rd sublayer are all polyimide layer.
Preferably, described fluorine based polymer layer is tetrafluoroethene and ethene copolymer (ETFE) layer, polytetrafluoroethylene polyhexafluoropropylene copolymer layer or polytetrafluoroethylene floor (polytetrafluorethylene).
Preferably, described fluorine based polymer layer is copolymer (ETFE) layer of polytetrafluoroethylene (polytetrafluorethylene) layer or tetrafluoroethene and ethene.
Preferably, described the first metal layer and described the second metal level are all copper layers.
Preferably, the thickness of described fluorine based polymer layer is between 25 to 50 microns.
Preferably, the thickness of described the first metal layer and described the second metal level is separately between 12 to 36 microns.
Preferably, the thickness of described the first sublayer and described the 3rd sublayer is separately between 6 to 25 microns.
The manufacture method of above-mentioned high-frequency substrate structure, as follows: described the second sublayer is fluorine based polymer layer, on described the first metal layer, be coated with polyamic acid and after oven drying and sub-amidatioon, form the first glue-free metal substrate of one side being formed by the first metal layer and the first sublayer, described the first sublayer is polyimide layer, on described the second metal level, be coated with polyamic acid and after oven drying and sub-amidatioon, form the second glue-free metal substrate of one side being formed by the second metal level and the 3rd sublayer, described the 3rd sublayer is polyimide layer, to after two sides hot pressing first metal substrate of described fluorine based polymer layer and the second metal substrate, can obtain described high-frequency substrate structure.
The invention has the beneficial effects as follows: high-frequency substrate structure of the present invention, comprise composite membrane, composite membrane is by the first sublayer sequentially coinciding mutually, the second sublayer and the 3rd San Ge sublayer, sublayer form, wherein, in three sublayers, having a sublayer at least is fluorine based polymer layer, also comprise the first metal layer, the first metal layer is formed on the first sublayer, also comprise the second metal level, the second metal level is formed on the 3rd sublayer, high-frequency substrate structure processing procedure processability of the present invention is good, and the known high-frequency substrate structure of the present invention of result has low-k after tested, low-dielectric loss and good thermal endurance.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention.
Embodiment
By particular specific embodiment, embodiments of the present invention are described below, those of ordinary skills can understand advantage of the present invention and effect easily by content disclosed in the present specification.The present invention also can other different mode be implemented, and, under not departing from disclosed category, can give different modifications and change that is.
Notice, the structure that the accompanying drawing of this specification illustrates, ratio, size etc., equal contents in order to coordinate specification to disclose only, for those of ordinary skills, understand and read, not in order to limit the enforceable qualifications of the present invention, therefore the technical essential meaning of tool not, the adjustment of the modification of any structure, the change of proportionate relationship or size, do not affecting under the effect that the present invention can produce and the object that can reach, all should still drop in the scope that disclosed technology contents can contain.Simultaneously, in this specification, quote as " on ", the term such as " first " and " second ", also only for ease of understanding of narrating, but not in order to limit the enforceable scope of the present invention, the change of its relativeness or adjustment, under without essence change technology contents, when being also considered as the enforceable category of the present invention.
Embodiment: please refer to Fig. 1, for showing high-frequency substrate structure 100 of the present invention, comprising: the first metal layer 110; Composite membrane 120, this composite membrane has the first sublayer 121, the second sublayer 122 and the 3rd sublayer 123; The second metal level 130; This first metal layer 110 is formed on the first sublayer 121 of this composite membrane 120, and this first sublayer 121 is folded between this second sublayer 122 and the first metal layer 110; This second metal level 130 is formed on the 3rd sublayer 123, and the 3rd sublayer 123 is folded between this second sublayer 122 and the second metal level 130.
The second sublayer 122 of high-frequency substrate structure 100 of the present invention is to use the fluorine based polymer layer with low-k material, and the example comprises but non-being limited to: copolymer or the polytetrafluoroethylene of polytetrafluoroethylene polyhexafluoropropylene copolymer, tetrafluoroethene and ethene.Because fluorine resin material itself has falling property of molecule and low-surface-energy characteristic, therefore, for improving itself and the first sublayer and the 3rd sublayer adhesive properties, the best use in the second sublayer is the surfaction fluorine resin film that surface coarsening is processed.
During concrete enforcement, the material of this fluorine based polymer layer can be the copolymer of polytetrafluoroethylene or tetrafluoroethene and ethene.Generally speaking, the thickness of this second sublayer 22 is 25 to 50 microns.
The first metal layer 110 of high-frequency substrate structure 100 of the present invention and the second metal level 130 are copper layers, and the thickness system of 130 layers of this first metal layer 110 and the second metal levels is separately between 12 to 36 microns.
The first sublayer 121 of the present invention and the 3rd sublayer 123 can be as polyimide layer, and its thickness system is separately between 6 to 25 microns.
The manufacture method of the high frequency substrate of the present embodiment is as follows:
It is the two-sided upgrading poly tetrafluoroethylene (the wet industrial model SD-222 of enlightening) of 25 microns that a thickness is used in the second sublayer of composite membrane, wherein, the first metal layer and the second metal level are Copper Foils, on each Copper Foil, be coated with polyamic acid and after oven drying and sub-amidatioon, form the first glue-free copper-clad plate of the one side formed by the first metal layer and the first sublayer and the second glue-free copper-clad plate of one side being formed by the second metal level and the 3rd sublayer, wherein, the first sublayer and the 3rd sublayer are that polyimide layer and its thickness are all 12 microns, to after two sides hot pressing first copper-clad plate of this poly tetrafluoroethylene and the second copper-clad plate, can obtain high-frequency substrate structure as shown in Figure 1.
Comparative example 1 and 2: in comparative example 1, the second sublayer used thickness of composite membrane is the Kapton of the Du Pont polyimide film of 25 microns, first, be as the first sublayer and the 3rd sublayer by the two-sided upgrading poly tetrafluoroethylene of 25 microns (the wet industrial model SD-222 of enlightening).Then, will after this two one sides poly tetrafluoroethylene hot pressing Kapton polyimide film, form composite membrane, will after these composite membrane upper and lower surface hot pressing 12 micron copper foils, form the high-frequency substrate structure of comparative example 1.In addition, comparative example 2 is after 50 microns of relative upper and lower surface hot pressing 18 micron copper foils of poly tetrafluoroethylene, to form the high-frequency substrate structure of comparative example 2.
Test case: the electrical characteristics test of high frequency substrate
According to data shown in table 1, prepare high frequency substrate sample, and this sample is carried out to mechanical property and electrical characteristics test, test event comprises heat stress test (Thermal stress test), adopt the heat stress test method of IPC-TM-65022, the temperature capacity of assessment baseplate material Knowing material under high temperature tin stove; It is according to ASTM 2520 waveguide resonant cavities (Waveguide Resonators) test mode that dielectric constant and dielectric loss measure, and by outcome record in table 1.
Table 1
Zero: changing does not appear in outward appearance completely
*: there is plate bursting or peel off in outward appearance
By the known high-frequency substrate structure of the present invention of the test result in table 1, there is low-k, low-dielectric loss and good thermal endurance.
Above-mentioned specification is only illustrative principle of the present invention and effect thereof, but not for limiting the present invention, protection scope of the present invention should be as listed in claims.
Claims (9)
1. a high-frequency substrate structure, it is characterized in that: comprise composite membrane, described composite membrane consists of the first sublayer sequentially coinciding mutually, the second sublayer and the 3rd San Ge sublayer, sublayer, wherein, in described the first sublayer, described the second sublayer and described the 3rd San Ge sublayer, sublayer, having a sublayer at least is fluorine based polymer layer; Also comprise the first metal layer, described the first metal layer is formed on described the first sublayer, and described the first sublayer is folded between described the second sublayer and described the first metal layer; Also comprise the second metal level, described the second metal level is formed on described the 3rd sublayer, and described the 3rd sublayer is folded between described the second sublayer and described the second metal level.
2. high-frequency substrate structure as claimed in claim 1, is characterized in that: described the second sublayer is fluorine based polymer layer, and described the first sublayer and described the 3rd sublayer are all polyimide layer.
3. high-frequency substrate structure as claimed in claim 1, is characterized in that: copolymer layer, polytetrafluoroethylene polyhexafluoropropylene copolymer layer or polytetrafluoroethylene floor that described fluorine based polymer layer is tetrafluoroethene and ethene.
4. high-frequency substrate structure as claimed in claim 3, is characterized in that: described fluorine based polymer layer is the copolymer layer of polytetrafluoroethylene floor or tetrafluoroethene and ethene.
5. high-frequency substrate structure as claimed in claim 1, is characterized in that: described the first metal layer and described the second metal level are all copper layers.
6. high-frequency substrate structure as claimed in claim 1, is characterized in that: the thickness of described fluorine based polymer layer is between 25 to 50 microns.
7. high-frequency substrate structure as claimed in claim 1, is characterized in that: the thickness of described the first metal layer and described the second metal level is separately between 12 to 36 microns.
8. high-frequency substrate structure as claimed in claim 2, is characterized in that: the thickness of described the first sublayer and described the 3rd sublayer is separately between 6 to 25 microns.
9. the manufacture method of a high-frequency substrate structure as claimed in claim 1, it is characterized in that: described the second sublayer is fluorine based polymer layer, on described the first metal layer, be coated with polyamic acid and after oven drying and sub-amidatioon, form the first glue-free metal substrate of one side being formed by the first metal layer and the first sublayer, described the first sublayer is polyimide layer, on described the second metal level, be coated with polyamic acid and after oven drying and sub-amidatioon, form the second glue-free metal substrate of one side being formed by the second metal level and the 3rd sublayer, described the 3rd sublayer is polyimide layer, to after two sides hot pressing first metal substrate of described fluorine based polymer layer and the second metal substrate, can obtain described high-frequency substrate structure.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105282959A (en) * | 2014-07-22 | 2016-01-27 | 昆山雅森电子材料科技有限公司 | High-frequency cover film with low Dk and Df characteristics and manufacture method thereof |
| CN105295753A (en) * | 2014-07-22 | 2016-02-03 | 昆山雅森电子材料科技有限公司 | High-frequency adhesive glue laminated structure and preparation method thereof |
| TWI664086B (en) * | 2018-01-18 | 2019-07-01 | 亞洲電材股份有限公司 | Double-sided copper foil substrate with fluorine polymer and high frequency and high transmission characteristics and the preparation method thereof and composite |
| CN113677532A (en) * | 2019-04-16 | 2021-11-19 | Ａｇｃ株式会社 | Laminate, method for manufacturing printed circuit board, and antenna |
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| CN101080957A (en) * | 2004-12-20 | 2007-11-28 | 旭硝子株式会社 | Laminate for flexible printed wiring boards |
| CN201700081U (en) * | 2010-03-24 | 2011-01-05 | 常州中英科技有限公司 | Polytetrafluoroethylene glass fibre basal plate |
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| US20050121226A1 (en) * | 2003-10-21 | 2005-06-09 | Park Electrochemical Corporation | Laminates having a low dielectric constant, low disapation factor bond core and method of making same |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105282959A (en) * | 2014-07-22 | 2016-01-27 | 昆山雅森电子材料科技有限公司 | High-frequency cover film with low Dk and Df characteristics and manufacture method thereof |
| CN105295753A (en) * | 2014-07-22 | 2016-02-03 | 昆山雅森电子材料科技有限公司 | High-frequency adhesive glue laminated structure and preparation method thereof |
| CN105295753B (en) * | 2014-07-22 | 2017-12-19 | 昆山雅森电子材料科技有限公司 | High frequency sticks together glue layer stack structure and preparation method thereof |
| CN105282959B (en) * | 2014-07-22 | 2018-06-05 | 昆山雅森电子材料科技有限公司 | High frequency cover film and its manufacturing method with low Dk and Df characteristics |
| TWI664086B (en) * | 2018-01-18 | 2019-07-01 | 亞洲電材股份有限公司 | Double-sided copper foil substrate with fluorine polymer and high frequency and high transmission characteristics and the preparation method thereof and composite |
| CN113677532A (en) * | 2019-04-16 | 2021-11-19 | Ａｇｃ株式会社 | Laminate, method for manufacturing printed circuit board, and antenna |
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