CN202276545U - High-frequency substrate structure - Google Patents
High-frequency substrate structure Download PDFInfo
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- CN202276545U CN202276545U CN 201120424822 CN201120424822U CN202276545U CN 202276545 U CN202276545 U CN 202276545U CN 201120424822 CN201120424822 CN 201120424822 CN 201120424822 U CN201120424822 U CN 201120424822U CN 202276545 U CN202276545 U CN 202276545U
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Abstract
The utility model discloses a high-frequency substrate structure. A dielectric layer has a first surface and a second surface which are opposite; a first adhesive layer and a second adhesive layer are respectively attached to the first surface and the second surface of the dielectric layer; the high-frequency substrate structure is provided with a first metal layer; the first adhesive layer is positioned between the first metal layer and the dielectric layer; a first polyimide layer is attached to the second adhesive layer; and a second metal layer is attached to the first polyimide layer. According to the high-frequency substrate structure disclosed by the utility model, the adhesive layers are respectively arranged between the dielectric layer and the metal layers; since the adhesive layers have proper adhesive force, the adhesive layers can be easily attached to the surfaces of the dielectric layer in a seamless mode; the dielectric layer is sandwiched between the polyimide layer and the metal layers by using the adhesive layers; the formation of the adhesive layers can enhance the processability of the dielectric layer in the pressing procedure; and the utility model is convenient to manufacture and has the advantages of low cost and high production yield.
Description
Technical field
The utility model relates to a kind of high frequency substrate.
Background technology
Printed circuit board (PCB) is a material indispensable in the electronic product, and along with the consumption electronic products demand is grown up, and also grows with each passing day for the demand of printed circuit board (PCB).Because but flexible printed wiring board has characteristics such as flexibility and three-dimensional space distribution; Drive under the gesture in the emphasical development compact, flexibility of technicalization electronic product, computer and ancillary equipment thereof, communication product and consumption electronic products or the like at present are widely used.
Recently,, make that electronic product all need use high-frequency circuit to support with tellite now, to reach high frequency and running effect at a high speed because electronic product has moved towards at a high speed and the application trend of high frequency.Be used as in the material of high-frequency circuit with tellite numerous, in the majority with fluorine resin except pottery and expanded material, its reason is that it has excellent electrical properties such as low-k and low-dielectric loss.Yet, when utilizing elevated temperature heat pressing fluorine resin, processing difficulties; Make the production yield not good, and different with the metal level thermal coefficient of expansion, can't use automation equipment to carry out volume production; And cost is higher, and its surface nature of fluorine resin has utmost point low-surface-energy in addition, is difficult for the characteristic of sticky metals; Cause delamination, yield is not high.
In view of this, need a kind ofly can improve the processing procedure processability, still have the high frequency substrate structure of low-k and low-dielectric loss simultaneously.
The utility model content
In order to overcome above-mentioned defective; The utility model provides a kind of high frequency substrate structure; This high frequency substrate structure can promote the processability of dielectric layer in pressure programming when guaranteeing to have low-k and low-dielectric loss, have simple for production, cost is low and the good advantage of production yield.
The utility model for the technical scheme that solves its technical problem and adopt is:
A kind of high frequency substrate structure; Be provided with dielectric layer; Said dielectric layer has two relative surfaces and is respectively first surface and second surface, is stained with first adhesion coating and second adhesion coating on the first surface of said dielectric layer and the second surface respectively, is provided with the first metal layer; Said first adhesion coating is between said the first metal layer and said dielectric layer; Be stained with first polyimide layer on said second adhesion coating, be stained with second metal level on said first polyimide layer, said first polyimide layer is folded between said second adhesion coating and said second metal level.
The utility model has also further adopted following technical proposals in order to solve its technical problem:
A kind of structure of this high frequency substrate structure is: said the first metal layer adheres on said first adhesion coating, and said first adhesion coating is folded between said the first metal layer and the said dielectric layer.
The another kind of structure of this high frequency substrate structure is: on the said structure basis; Be provided with second polyimide layer; Said second polyimide layer adheres on said first adhesion coating; Said the first metal layer adheres on said second polyimide layer, and said second polyimide layer is folded between said the first metal layer and said first adhesion coating.
Said dielectric layer is a fluoropolymer layer, and the thickness of said dielectric layer is 25～50 microns.Preferably; Said dielectric layer is polytrifluorochloroethylene (Polychlorotrifluorethylene; PCTFE) layer, polytetrafluoroethylene (polytetrafluorethylene, PTFE) layer, polytetrafluoroethylene polyhexafluoropropylene copolymer (Fluorinated ethylene propylene, FEP) a kind of in layer and the copolymer (ETFE) of tetrafluoroethene and ethene layer; More preferably, the copolymer layer of polytetrafluoroethylene floor or tetrafluoroethene and ethene.And to have coarse structure (first surface with second surface on have the concavo-convex coarse structure that links to each other) person through roughening treatment with electrical characteristic with low-k (for example Dk=2.1 (1GHz)), low-dielectric loss (for example Df=0.0005 (1GHz)) and surface be good; Therefore, this high frequency substrate structure has the characteristic of low-k.
It is that resin, silicon rubber are resin, to gather ring diformazan benzene series resin, BMI be at least a in resin and the polyimide resin that the material of said first adhesion coating and second adhesion coating is respectively epoxy resin, acrylic resin, amido formate, and the thickness of said first adhesion coating and second adhesion coating is respectively 6～15 microns.
The said the first metal layer and second metal level are all the copper layer, and the said the first metal layer and second metal layer thickness are respectively 12～36 microns.
The thickness of said first polyimide layer is 6～25 microns.
The thickness of said second polyimide layer is 6～25 microns.
The beneficial effect of the utility model is: the high frequency substrate structure of the utility model is provided with adhesion coating between dielectric layer and metal level; Because adhesion coating has suitable adhesion strength; Be easy to seamless unoccupied place and dielectric layer surface and fit, through adhesion coating dielectric layer and polyimide layer are folded between the metal level, through the formation of adhesion coating; Can promote the processability of dielectric layer, have more simple for production, the low good advantage of production yield that reaches of cost at pressure programming.
Description of drawings
Fig. 1 is the utility model embodiment 1 said high frequency substrate structural representation;
Fig. 2 is the utility model embodiment 2 said high frequency substrate structural representations.
Embodiment
Below through the embodiment of specific instantiation explanation the utility model, the personage who is familiar with this skill can be understood the advantage and the effect of the utility model easily by the content that this specification disclosed.The utility model also can other different mode be implemented, and, under the category that discloses from the utility model that is not contrary to, can give different modifications and change that is.
Notice; The appended graphic structure that illustrates of this specification, ratio, size etc.;,, be not to be the enforceable qualifications of the utility model all for the personage's who is familiar with this skill understanding and reading only in order to cooperate the content that specification disclosed; Event is the technical essential meaning of tool not; The adjustment of the modification of any structure, the change of proportionate relationship or size is not influencing under effect that the utility model can produce and the purpose that can reach, and the technology contents that all should still drop on the utility model and disclosed gets in the scope that can contain.Simultaneously; That is quoted in this specification reaches terms such as " second " like " first "; Also be merely be convenient to narrate clear, but not in order to limit the enforceable scope of the utility model, the change of its relativeness or adjustment; Under no essence change technology contents, should also be regarded as the enforceable category of the utility model.
Embodiment 1: a kind of high frequency substrate structure 100; Be provided with dielectric layer 110; Said dielectric layer has two relative surfaces and is respectively first surface 110a and second surface 110b, has the concavo-convex coarse structure that links to each other 1101 on the first surface 110a of said dielectric layer and the second surface 110b.Be stained with first adhesion coating 111 and second adhesion coating 112 on the first surface 110a of said dielectric layer 110 and the second surface 110b respectively; Be provided with the first metal layer 115; Said first metal 115 adheres on said first adhesion coating 111; Said first adhesion coating 111 is folded between said the first metal layer 115 and the said dielectric layer 110; Be stained with first polyimide layer 113 on said second adhesion coating 112, be stained with second metal level 116 on said first polyimide layer 113, said first polyimide layer 113 is folded between said second adhesion coating 112 and said second metal level 116.
Wherein, Said dielectric layer is 110 can use the fluoropolymer layer with low-k material; The example comprises but non-being limited to: the copolymer of polytetrafluoroethylene polyhexafluoropropylene copolymer, polytetrafluoroethylene or tetrafluoroethene and ethene, the preferably copolymer of polytetrafluoroethylene or tetrafluoroethene and ethene.Because polytetrafluoroethylene has excellent electric characteristics such as low-k and low-dielectric loss, so polytetrafluoroethylene is preferable dielectric layer base material.Generally speaking, this dielectric layer 110 has 25 to 50 microns thickness.
Wherein, Said first adhesion coating 111 and second adhesion coating 112 can be identical or different resin solid, and the instance of the material of this first adhesion coating 111 and second adhesion coating 112 comprises but non-being limited to: epoxy resin, acrylic resin, amido formate are that resin, silicon rubber are resin, to gather ring diformazan benzene series resin, BMI be one or more resins of resin and group that polyimide resin is formed.Generally speaking, the thickness of this first adhesion coating 111 and second adhesion coating 112 is separately between 6 to 15 microns scope, between preferable about 6 to 12 microns.
Wherein, the said the first metal layer 115 and second metal level 116 are all the copper layer, and the thickness of 116 layers of this first metal layer 115 and second metal levels is separately between 12 to 36 microns, between preferable about 12 to 18 microns.
Wherein, the thickness of said first polyimide layer 113 is 6～25 microns.
In the present embodiment, dielectric layer 110 is to be bonded to the first metal layer 115 through first adhesion coating 111; And conform to second metal level 116 again after being bonded to first polyimide layer 113 through second adhesion coating 112.In addition, first polyimide layer 113 and second metal level 116 can be through after polyamic acid is coated to copper metal layer, and the no glue that forms through cyclodehydration is copper clad laminate.The high frequency substrate structure 100 of the utility model is through adhesion coating dielectric layer and polyimide layer to be folded between the metal level; Make high frequency substrate even utilize pressure programming; Also can promote the processability of dielectric layer, have more simple for production, low-cost and the good advantage of production yield.
Embodiment 2: a kind of high frequency substrate structure 200; Be provided with dielectric layer 220; Said dielectric layer has two relative surfaces and is respectively first surface 220a and second surface 220b, has the concavo-convex coarse structure that links to each other 2201 on the first surface 220a of said dielectric layer and the second surface 220b.Be stained with first adhesion coating 221 and second adhesion coating 222 on the first surface 220a of said dielectric layer 220 and the second surface 220b respectively; Be provided with the first metal layer 225 and second polyimide layer 224; Said second polyimide layer 224 adheres on said first adhesion coating 221; Said the first metal layer 225 adheres on said second polyimide layer 224; Said second polyimide layer 224 is folded between said the first metal layer 225 and said first adhesion coating 221; Be stained with first polyimide layer 223 on said second adhesion coating 222, be stained with second metal level 226 on said first polyimide layer 223, said first polyimide layer 223 is folded between said second adhesion coating 222 and said second metal level 226.
Wherein, Said dielectric layer is 220 can use the fluoropolymer layer with low-k material; The example comprises but non-being limited to: the copolymer of polytetrafluoroethylene polyhexafluoropropylene copolymer, polytetrafluoroethylene or tetrafluoroethene and ethene, the preferably copolymer of polytetrafluoroethylene or tetrafluoroethene and ethene.In the present embodiment, this dielectric layer is polytetrafluoroethylene floor (industrial model SD-222), and has 25 to 50 microns thickness.
Wherein, Said first adhesion coating 221 and second adhesion coating 222 can be identical or different resin solid, and the instance of the material of this first adhesion coating 221 and second adhesion coating 222 comprises but non-being limited to: epoxy resin, acrylic resin, amido formate are that resin, silicon rubber are resin, to gather ring diformazan benzene series resin, BMI be one or more resins of resin and group that polyimide resin is formed.Generally speaking, the thickness of this first adhesion coating 221 and second adhesion coating 222 is separately between 6 to 15 microns scope, between preferable about 6 to 12 microns.
Wherein, the said the first metal layer 225 and second metal level 226 are all the copper layer, and the thickness of 226 layers of this first metal layer 225 and second metal levels is separately between 12 to 36 microns, between preferable about 12 to 18 microns.
Wherein, the thickness of said first polyimide layer 223 is 6～25 microns.The thickness of said second polyimide layer 224 is 6～25 microns.
In the present embodiment, dielectric layer 220 is to conform to the first metal layer 225 again after being bonded to second polyimide layer 224 through first adhesion coating 221; And conform to second metal level 226 again after being bonded to first polyimide layer 223 through second adhesion coating 222.In addition, the formation of first polyimide layer 223 and second metal level 226 and second polyimide layer 224 all can be through after polyamic acid is coated to copper metal layer with the formation of the first metal layer 225, and the no glue that forms through cyclodehydration is copper clad laminate.The high frequency substrate structure 200 of the utility model is through adhesion coating dielectric layer and polyimide layer to be folded between the metal level; Make high frequency substrate even utilize pressure programming; Also can promote the processability of dielectric layer, have more simple for production, low-cost and the good advantage of production yield.
Below the electrical characteristic of high frequency substrate is tested:
Prepare the high frequency substrate sample according to embodiment 1 with data information shown in embodiment 2 and the table one; And this sample carried out mechanical property and electrical characteristics test; Test event comprises then intensity (peel strength) test, omnipotent puller system (model: C13027); Dielectric constant and dielectric loss measure according to ASTM 2520 waveguide resonant cavities (Waveguide Resonators) test mode, and with outcome record in table one.
Table one
First and second adhesive layer thickness of comparative example has problems to influencing the performance of dielectric loss, because of the thickness effect dielectric loss reduces the signal quality, influences the signal authenticity, causes distortion.
Shown in table one, the high frequency substrate structure of the utility model has low-k and low dielectric absorption really.Therefore, the utility model is folded between the metal level dielectric layer and polyimide layer through adhesion coating, so need not carry out the high temperature pressure programming, can not influence the substrate processability, can make simple for productionly, has low cost, productivity ratio is good and the advantage of excellent electric characteristics.
In sum; The high frequency substrate structure of the utility model is folded between the metal level dielectric layer and polyimide layer through adhesion coating; Through the formation of adhesion coating, can promote the processability of dielectric layer in the high temperature pressure programming, have more simple for production, low-cost and the good advantage of production yield.
The foregoing description is merely the principle and the effect thereof of illustrative the utility model, but not is used to limit the utility model.The rights protection scope of the utility model should be listed like claims.
Claims (10)
1. high frequency substrate structure; It is characterized in that: be provided with dielectric layer; Said dielectric layer has two relative surfaces and is respectively first surface and second surface, is stained with first adhesion coating and second adhesion coating on the first surface of said dielectric layer and the second surface respectively, is provided with the first metal layer; Said first adhesion coating is between said the first metal layer and said dielectric layer; Be stained with first polyimide layer on said second adhesion coating, be stained with second metal level on said first polyimide layer, said first polyimide layer is folded between said second adhesion coating and said second metal level.
2. high frequency substrate structure according to claim 1 is characterized in that: said the first metal layer adheres on said first adhesion coating, and said first adhesion coating is folded between said the first metal layer and the said dielectric layer.
3. high frequency substrate structure according to claim 1; It is characterized in that: be provided with second polyimide layer; Said second polyimide layer adheres on said first adhesion coating; Said the first metal layer adheres on said second polyimide layer, and said second polyimide layer is folded between said the first metal layer and said first adhesion coating.
4. high frequency substrate structure according to claim 1 is characterized in that: said dielectric layer is a fluoropolymer layer, and the thickness of said dielectric layer is 25～50 microns.
5. high frequency substrate structure according to claim 4 is characterized in that: said dielectric layer is a kind of in the copolymer layer of polytrifluorochloroethylene layer, polytetrafluoroethylene floor, polytetrafluoroethylene polyhexafluoropropylene copolymer layer and tetrafluoroethene and ethene.
6. high frequency substrate structure according to claim 1 is characterized in that: the thickness of said first adhesion coating and second adhesion coating is respectively 6～15 microns.
7. high frequency substrate structure according to claim 1 is characterized in that: the said the first metal layer and second metal level are all the copper layer, and the said the first metal layer and second metal layer thickness are respectively 12～36 microns.
8. high frequency substrate structure according to claim 1 is characterized in that: the thickness of said first polyimide layer is 6～25 microns.
9. high frequency substrate structure according to claim 3 is characterized in that: the thickness of said second polyimide layer is 6～25 microns.
10. high frequency substrate structure according to claim 1 is characterized in that: have the concavo-convex coarse structure that links to each other on the first surface of said dielectric layer and the second surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120424822 CN202276545U (en) | 2011-11-01 | 2011-11-01 | High-frequency substrate structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120424822 CN202276545U (en) | 2011-11-01 | 2011-11-01 | High-frequency substrate structure |
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| CN202276545U true CN202276545U (en) | 2012-06-13 |
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| CN 201120424822 Expired - Lifetime CN202276545U (en) | 2011-11-01 | 2011-11-01 | High-frequency substrate structure |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103096612A (en) * | 2011-11-01 | 2013-05-08 | 昆山雅森电子材料科技有限公司 | High-frequency substrate structure |
| CN106585008A (en) * | 2015-10-19 | 2017-04-26 | 昆山雅森电子材料科技有限公司 | Low-dielectric rubber film and manufacturing method thereof |
| CN106604521A (en) * | 2015-10-19 | 2017-04-26 | 昆山雅森电子材料科技有限公司 | Composite type stack-up high-frequency low-dielectricity adhesive film and manufacturing method thereof |
| US11369023B2 (en) | 2017-05-10 | 2022-06-21 | Kunshan Aplus Tec. Corporation | Composite LCP high-frequency high-speed double-sided copper foil substrate and preparation method thereof |
-
2011
- 2011-11-01 CN CN 201120424822 patent/CN202276545U/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103096612A (en) * | 2011-11-01 | 2013-05-08 | 昆山雅森电子材料科技有限公司 | High-frequency substrate structure |
| CN106585008A (en) * | 2015-10-19 | 2017-04-26 | 昆山雅森电子材料科技有限公司 | Low-dielectric rubber film and manufacturing method thereof |
| CN106604521A (en) * | 2015-10-19 | 2017-04-26 | 昆山雅森电子材料科技有限公司 | Composite type stack-up high-frequency low-dielectricity adhesive film and manufacturing method thereof |
| US11369023B2 (en) | 2017-05-10 | 2022-06-21 | Kunshan Aplus Tec. Corporation | Composite LCP high-frequency high-speed double-sided copper foil substrate and preparation method thereof |
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| CX01 | Expiry of patent term |
Granted publication date: 20120613 |
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| CX01 | Expiry of patent term |