CN103045238A - 一种纳米片发光材料及其制备方法 - Google Patents

一种纳米片发光材料及其制备方法 Download PDF

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CN103045238A
CN103045238A CN2012105750096A CN201210575009A CN103045238A CN 103045238 A CN103045238 A CN 103045238A CN 2012105750096 A CN2012105750096 A CN 2012105750096A CN 201210575009 A CN201210575009 A CN 201210575009A CN 103045238 A CN103045238 A CN 103045238A
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white powder
mgga
nanometer sheet
furnace temperature
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刘雷
肖太升
曲志乾
于正友
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Qingdao Shengjia Information Technology Co Ltd
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Qingdao Shengjia Information Technology Co Ltd
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Abstract

本发明涉及一种MgGa2O4：Mn2+纳米片的合成方法，采用两步合成法，包括：采用尿素水解沉淀法制备前驱体白色粉末；将白色粉末研磨均匀，倒入瓷舟中，进行加热；炉温达到1000℃后保持反应三小时，然后在Ar气保护下冷却到室温；收集到白色的粉末分散在HCI溶液中超声10min；过滤，洗涤以及真空干燥之后得到MgGa2O4：Mn2+纳米片。

Description

一种纳米片发光材料及其制备方法
技术领域
本发明涉及一种纳米片发光材料，尤其涉及MgGa2O4：Mn2+纳米片。
背景技术
纳米发光材料是指基质的粒子尺寸在1-100nm的发光材料，它包括半导体纳米晶体发光材料和具有分立发光中心的掺杂稀土或过渡金属离子的纳米发光材料。1994年Bharagava等首次报道了过渡金属离子掺杂半导体纳米微粒Zns:Mn的发光性质，发现其发光寿命缩短了5个数量级，而外量子效率仍高达18%。尽管这是一个有争议的结果，但是却引起了人们半导体纳米发光材料的极大兴趣。目前，在半导体纳米发光材料上已经进行了大量的、较深入的研究，如量子点、量子线、量子阱、超品格、多孔硅和有序纳米结构阵列等。在理论上，主要探讨量子限域效应和小尺寸效应等对半导体材料能带结构和光谱性质的影响;在应用上，从材料的制备和加工入手，寻找材料的应用及功能器件制造的途径。与此同时，稀土或过渡金属离子掺杂的纳米发光材料也开始受到关注，并探索了大量的合成方法，如沉淀法、热分解法、溶胶-凝胶法、燃烧法、激光蒸发冷凝法、CVD法、水热法、模板组装等。从应用的背景考虑，以掺杂纳米材料取代相应的体材料，可以提高显示的分辨率，并能在光电器件、光催化和化学传感器等方面有更多应用。从基础研究考虑，掺杂纳米发光材料为研究微观表面物理问题尤其是表面微观环境提供了理想的载体。因此，稀土和过渡金属掺杂纳米发光材料正成为发光学研究的热点之一。
发明内容
本发明采用两步合成法合成MgGa2O4：Mn2+纳米片。
本发明提供一种MgGa2O4：Mn2+纳米片的合成方法，采用两步合成法，包括：
采用尿素水解沉淀法制备前驱体白色粉末；
将白色粉末研磨均匀，倒入瓷舟中，进行加热；
炉温达到1000℃后保持反应三小时，然后在Ar气保护下冷却到室温；
收集到白色的粉末分散在HCl溶液中超声10min；
过滤，洗涤以及真空干燥之后得到MgGa2O4：Mn2+纳米片。
附图简要说明
图1室温下用390nm波长激发所得到的MgGa2O4：Mn2+纳米片的光致发光谱图。
具体实施方式
本发明采用采用两步合成法合成MgGa2O4：Mn2+纳米片。
前驱体的制备采用的是尿素水解沉淀法。将一定量的Ga（NO3)3，Mg（NO3)2，Mn（NO3)2，尿素以及蒸馏水按照摩尔比例1:2:0.004:5:400混合在一起，磁力搅拌成透明溶液。然后将上述混合溶液倒入内衬聚四氟乙烯的高压釜中并密封，在150℃下保持反应24h。待反应结束后，将高压釜中的白色沉淀经过滤、水洗若干遍之后再在60℃真空干燥数小时，得到白色粉末作为反应的前驱体。
将上述白色粉末研磨均匀，倒入瓷舟中，置于管式炉的中央。在加热之前，通入大流量的高纯度Ar气，大概持续20分钟，以便将整个气路中的空气排出。然后通入氢气和氢气的混合气体，并接通加热炉的主回路电源对石英管进行加热。通入氢气的原因是防止Mn2+被氧化。炉温达到1000℃后保持反应三小时，然后在Ar气保护下冷却到室温。反应完毕后，将在舟中收集到白色的粉末分散在浓度为O.1M的HCI溶液中超声10min，之后过滤，用蒸馏水洗涤到中性，在室温下真空干燥之后得到MgGa2O4：Mn2+纳米片。
图1是在室温下用390nm波长激发所得到的MgGa2O4：Mn2+纳米片的光致发光谱图。图中显示样品具有宽带发射，发射峰强度最大值对应的波长位于566nm处。
MgGa2O4：Mn2+经390nm波长激发可以得到宽带发射，发射峰强度最大值对应的波长位于566nm处。Mn2+离子主要占据了MgGa2O4：Mn2+四面体空隙而处于相对比较弱的晶体场中，由4T1(4G)→6A1(6S)的跃迁而产生黄绿色光。由于MgGa2O4：Mn2+纳米片的结构特点和发光性质，其可以作为可见光区域内的纳米发光材料有着潜在的应用前景。

Claims (1)

1.一种MgGa2O4：Mn2+纳米片的合成方法，采用两步合成法，包括：
采用尿素水解沉淀法制备前驱体白色粉末；
将白色粉末研磨均匀，倒入瓷舟中，进行加热；
炉温达到1000℃后保持反应三小时，然后在Ar气保护下冷却到室温；
收集到白色的粉末分散在HCI溶液中超声10min；
过滤，洗涤以及真空干燥之后得到MgGa2O4：Mn2+纳米片。
CN2012105750096A 2012-12-26 2012-12-26 一种纳米片发光材料及其制备方法 Pending CN103045238A (zh)

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CN110172343A (zh) * 2019-06-20 2019-08-27 中国人民银行印制科学技术研究所 发光材料、发光制品及其制备方法

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Publication number Priority date Publication date Assignee Title
CN110172343A (zh) * 2019-06-20 2019-08-27 中国人民银行印制科学技术研究所 发光材料、发光制品及其制备方法
CN110172343B (zh) * 2019-06-20 2022-03-18 中钞印制技术研究院有限公司 发光材料、发光制品及其制备方法

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Application publication date: 20130417